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21. 发明专利

CA1029480A PRESSURE TUBE ASSEMBLY OF PRESSURE TUBE-TYPE NUCLEAR REACTOR 未知
公开(公告)号：CA1029480A
公开(公告)日：1978-04-11
申请号：CA236750
申请日：1975-09-30
申请人： HITACHI LTD
发明人： SHIBATO EIZO , MINATO AKIRA , TAKAYAMA TAKEO , SUZUKI KENICHI
IPC分类号： C22C38/00 , G21C1/20 , G21C3/30

22. 发明专利

DE2320106A1 Martensitic steel - with improved weldability 未知
公开(公告)号：DE2320106A1
公开(公告)日：1973-11-15
申请号：DE2320106
申请日：1973-04-19
申请人： HITACHI LTD
发明人： MINATO AKIRA , SHIMIZU TSUTOMU , NISHIMATSU AKIRA
IPC分类号： C22C38/00 , C22C38/48 , C22C39/20
摘要： Martensitic steel having good weldability, corrosion resistance, strength and toughness containts (by wt.): 0.06-0.15% C; 11-13.5% Cr; 1.5-3% Ni; 0.7-2% Mo; 0.03-0.6% Nb; 1% Si; 0.2-2% Mn; 0.2% N, bal. Fe plus usual impurities.

23. 发明专利

JPH0335385B2 失效
公开(公告)号：JPH0335385B2
公开(公告)日：1991-05-28
申请号：JP25175986
申请日：1986-10-24
申请人： HITACHI LTD
发明人： HONDA TAKU , MINATO AKIRA , IZUMITANI MASAKYO , KASHIMURA EIJI , OOSUMI KATSUMI
IPC分类号： G21D1/00 , C23F14/00 , C23F15/00 , F28F19/00 , G21D3/00

24. 发明专利

JPH0130553B2 失效
公开(公告)号：JPH0130553B2
公开(公告)日：1989-06-20
申请号：JP8513780
申请日：1980-06-25
申请人： HITACHI LTD
发明人： SUZUKI MAMORU , SUZUKI KATSUMI , ITO KAZUTOSHI , MINATO AKIRA , KANBAYASHI TAKESHI , HOSHINO YOSHUKI
IPC分类号： C02F1/48

25. 发明专利

JPS6348944B2 失效
公开(公告)号：JPS6348944B2
公开(公告)日：1988-10-03
申请号：JP10586579
申请日：1979-08-22
申请人： HITACHI LTD
发明人： ITO MASAHIKO , MIDORIKAWA HEIHACHIRO , MINATO AKIRA , KUBO MITSURU
IPC分类号： C23C2/02

26. 发明专利

JPS63313B2 失效
公开(公告)号：JPS63313B2
公开(公告)日：1988-01-06
申请号：JP4267082
申请日：1982-03-19
申请人： HITACHI LTD
发明人： ITO KAZUTOSHI , SUZUKI KATSUMI , SUZUKI MAMORU , MINATO AKIRA , UKAJI HIDEO
IPC分类号： B65D90/22 , C23F13/00 , G21D1/00

27. 发明专利

JPS6250531B2 失效
公开(公告)号：JPS6250531B2
公开(公告)日：1987-10-26
申请号：JP14253684
申请日：1984-07-09
申请人： HITACHI LTD
发明人： SASADA YASUHIRO , MINATO AKIRA
IPC分类号： C21D9/50

28. 发明专利

JPS62123737A DICING EQUIPMENT 失效
公开(公告)号：JPS62123737A
公开(公告)日：1987-06-05
申请号：JP26245585
申请日：1985-11-25
申请人： HITACHI LTD , HITACHI TOKYO ELECTRONICS
发明人： MIMATA TSUTOMU , KAWANOBE TORU , MINATO AKIRA
IPC分类号： B24B55/02 , B28D5/00 , H01L21/301 , H01L21/304 , H01L21/78
摘要： PURPOSE:To effectively prevent the charge of a high-pressure water flow by using pure water itself for cooling a blade and required concentration carbonic acid water for washing. CONSTITUTION:Pure water is supplied from the same water tank 19 to both the nozzle 12 for cooling a blade 11 and the high-pressure injection nozzle 13 for washing. The pure water is directly supplied to the nozzle 12 for cooling from the water tank 19. On the other hand, the pure water from the water tank 19 is introduced in a mixing tank 20 where carbon dioxide is introduced from a cylinder 21 and is mixed with the pure water and required concentration carbonic acid water is made for the high-pressure injection nozzle. By pressurizing the carbonic acid water with a pump 22, a so called high-pressure jet water flow can be injected on a wafer 16 from the nozzle 13. In this way, charging due to the friction of the washing water with the nozzle or with air, etc. can sufficiently be prevented.

29. 发明专利

JPS61294398A METHOD OF OPERATING BOILING WATER TYPE NUCLEAR POWER PLANT 失效
公开(公告)号：JPS61294398A
公开(公告)日：1986-12-25
申请号：JP13603285
申请日：1985-06-24
申请人： HITACHI LTD
发明人： IZUMITANI MASAKIYO , ONAKA NORIYUKI , HONDA TAKU , MINATO AKIRA , KAWAKAMI TOSHIO
IPC分类号： G21D3/08

30. 发明专利

JPS61287155A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS61287155A
公开(公告)日：1986-12-17
申请号：JP12806885
申请日：1985-06-14
申请人： HITACHI LTD
发明人： KOBAYASHI SHIRO , ITO MASAHIKO , MINATO AKIRA
IPC分类号： H01L23/02 , H01L21/56 , H01L23/28 , H01L23/29 , H01L23/31 , H01L23/49
摘要： PURPOSE:To obtain excellent dampproofing and corrosion resistance by bringing a semiconductor device after wire bonding into contact with a nonaqueous solvent, into which an organic substance generating a metal-organic matter compound insoluble to water is dissolved, forming a compound and sealing the semiconductor device with a resin. CONSTITUTION:Triazoles are preferable as a compound formation type organic matter. A chip such as a silicon chip 1 is mounted onto lead frames 2, and Cu wires 3 are bonded with Ag electrodes 4 for the lead frames 2 and Al electrodes 5 for the silicon chip 1. The semiconductor device is dipped into an ethyl alcohol solution into which benzotriazole is dissolved, a compound of a metal-the organic matter is shaped on the surface, and the semiconductor device is pulled up from said solution and dried. Ag-benzotriazole films 6 are shaped onto the surfaces of the Ag electrodes 4 for the lead frames, Cu- benzotriazole films 7 onto the surfaces of the Cu wires 3 and Al-benzotriazole films 8 onto the surfaces of the Al electrodes 5 for the silicon chip 1, and these films, chip, wires, electrodes, etc. are sealed with a sealing resin 9.

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