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    • 25. 发明授权
    • Clathrate compounds and manufacturing method thereof
    • 包合物及其制造方法
    • US06461581B1
    • 2002-10-08
    • US09631176
    • 2000-08-02
    • Haruki EguchiAkihiko SuzukiSatoshi TakahashiKaoru MiyaharaTohru TanakaShigemitsu KiharaKazuo Tsumuraya
    • Haruki EguchiAkihiko SuzukiSatoshi TakahashiKaoru MiyaharaTohru TanakaShigemitsu KiharaKazuo Tsumuraya
    • C01B3100
    • H01L35/14C01B33/06Y02P20/129Y02P20/13
    • The present invention provides a clathrate compound which can be used as a thermoelectric material, a hard material, or a semiconductor material. Silicon or carbon are formed into a clathrate lattice, and a clathrate compound is then formed in which specified doping atoms are encapsulated within the clathrate lattice, and a portion of the atoms of the clathrate lattice are substituted with specified substitution atoms. The clathrate lattice is, for example, a silicon clathrate 34 (Si34) mixed lattice of a Si20 cluster including a dodecahedron of Si atoms, and a Si28 cluster including a hexahedron of Si atoms. Suitable doping atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 4A, group 5A, group 6A, and group 8, and suitable substitution atoms are atoms from group 1A, group 2A, group 3A, group 1B, group 2B, group 3B, group 5A, group 6A, group 7A, group 5B, group 6B, group 7B, and group 8 of the periodic table. Suitable manufacturing methods include melt methods and sintering methods, and moreover intercalant intercalation compounds or the like may also be used as raw materials.
    • 本发明提供可用作热电材料,硬质材料或半导体材料的包合物。 硅或碳形成包合物晶格,然后形成包合物化合物,其中特定的掺杂原子被包封在包合物晶格内,并且包合物晶格的一部分原子被指定的取代原子取代。 包合物晶格是例如包含Si原子的十二面体的Si 20簇的硅包合物34(Si34)混合晶格和包含Si原子的六面体的Si28簇。 合适的掺杂原子是1A组,2A组,3A组,1B组,2B组,3B组,4A组,5A组,6A组和8组的原子,合适的取代原子是来自1A组,2A组, 3A组,1B组,2B组,3B组,5A组,6A组,7A组,5B组,6B组,7B组和8周期。 合适的制造方法包括熔融法和烧结方法,而且插入剂插层化合物等也可以用作原料。
    • 26. 发明授权
    • 5-aminolevulinic acid producing microorganism and process for producing
5-aminolevulinic acid
    • 5-氨基乙酰丙酸生产微生物和生产5-氨基乙酰丙酸的方法
    • US5733770A
    • 1998-03-31
    • US575818
    • 1995-12-20
    • Keitaro WatanabeSeiji NishikawaTohru TanakaYasushi Hotta
    • Keitaro WatanabeSeiji NishikawaTohru TanakaYasushi Hotta
    • C12P13/00C12N1/20
    • C12P13/005C12R1/01C12R1/19C12R1/38C12R1/85Y10S435/822
    • A microorganism that produces 5-aminolevulinic acid, wherein the microorganism has a 5-aminolevulinic acid dehydratase variant having a reduced inhibitor constant for a 5-aminolevulinic acid dehydratate inhibitor. A microorganism that produces 5-aminolevulinic acid, wherein the microorganism is a photosynthetic bacterium that produces 5-aminolevulinic acid without light irradiation. A progess for producing 5-aminolevulinic acid comprising the step of culturing a microorganism that produces 5-aminolevulinic acid in a culture medium under at least one condition selected from the group consisting of (a) less than 1 ppm of dissolved oxygen concentration in the culture medium, (b) from -180 to 50 mV of oxidation-reduction potential in the culture medium, and (c) from 5.times.10.sup.-9 to (KrM-2.times.10.sup.-8) (mol of O.sub.2 /ml.multidot.min.multidot.cell) of cellular respiration rate, wherein KrM represents the maximum cellular respiration rate when oxygen is supplied in an excess quantity.
    • 一种产生5-氨基乙酰丙酸的微生物,其中微生物具有5-氨基乙酰丙酸脱水抑制剂的抑制剂常数降低的5-氨基乙酰丙酸脱水酶变体。 产生5-氨基乙酰丙酸的微生物,其中所述微生物是不照射光而产生5-氨基乙酰丙酸的光合细菌。 一种用于生产5-氨基乙酰丙酸的方法,包括在选自以下的至少一种条件下培养在培养基中产生5-氨基乙酰丙酸的微生物的步骤:(a)在培养物中小于1ppm的溶解氧浓度 培养基中,(b)在培养基中的-180至50mV的氧化还原电位,和(c)5×10 -9至(KrM-2×10 -8)(摩尔的O 2 / ml×Min×细胞)的细胞呼吸速率,其中 当以超量供给氧气时,KrM表示最大的细胞呼吸速率。