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21. 发明授权

US07521334B2 Method for producing direct bonded wafer and direct bonded wafer 有权
标题翻译：直接接合晶片和直接接合晶片的制造方法
公开(公告)号：US07521334B2
公开(公告)日：2009-04-21
申请号：US11659283
申请日：2005-11-29
申请人： Norihiro Kobayashi , Toru Ishizuka , Tomohiko Ohta , Hiroji Aga , Yasuo Nagaoka
发明人： Norihiro Kobayashi , Toru Ishizuka , Tomohiko Ohta , Hiroji Aga , Yasuo Nagaoka
IPC分类号： H01L21/30
CPC分类号： H01L21/2007 , H01L21/76254
摘要： A method for producing a direct bonded wafer comprising: forming a thermal oxide film or a CVD oxide film on a surface of at least one of a bond wafer and a base wafer, and bonding the wafer to the other wafer via the oxide film; subsequently thinning the bond wafer to prepare a bonded wafer; and thereafter conducting a process of annealing the bonded wafer under an atmosphere including any one of an inert gas, hydrogen and a mixed gas of an inert gas and hydrogen so that the oxide film between the bond wafer and the base wafer is removed to bond the bond wafer directly to the base wafer. Thereby, there is provided a method for producing a direct bonded wafer in which generation of voids is reduced, and a direct bonded wafer with a low void count.
摘要翻译：一种直接接合晶片的制造方法，包括：在接合晶片和基底晶片中的至少一个的表面上形成热氧化膜或CVD氧化膜，并且经由所述氧化膜将所述晶片接合到所述另一方的晶片; 随后使接合晶片变薄以制备接合晶片; 然后在惰性气体，氢气和惰性气体与氢气的混合气体中的任何一种的气氛下进行退火接合晶片的工序，从而去除接合晶片和基底晶片之间的氧化膜，将晶片直接接合到基底晶片。因此，提供了一种制造空穴产生减少的直接接合晶片的方法和具有低空隙率的直接接合晶片。

22. 发明授权

US07176102B2 Method for producing SOI wafer and SOI wafer 有权
标题翻译：制造SOI晶圆和SOI晶圆的方法
公开(公告)号：US07176102B2
公开(公告)日：2007-02-13
申请号：US10948234
申请日：2004-09-24
申请人： Hiroji Aga , Naota Tate , Susumu Kuwabara , Kiyoshi Mitani
发明人： Hiroji Aga , Naota Tate , Susumu Kuwabara , Kiyoshi Mitani
IPC分类号： H01L21/76
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.
摘要翻译：一种用于通过氢离子分层方法制造SOI晶片的方法，包括至少一个步骤，即接合基底晶片和具有通过气体离子注入形成的微气泡层的接合晶片，以及将具有SOI层的晶片分层的步骤微气泡层作为边界，其中，在分层步骤之后，使用快速加热/快速冷却装置（RTA）和批料在含氢或氩的气氛中对具有SOI层的晶片进行两级热处理加工型炉。优选地，首先进行RTA装置的热处理。通过氢离子分层方法剥离的SOI层表面的表面粗糙度在短时间段到长周期的范围内得到改善，并且以高生产率有效地制造了由于SOI层中的COP而不产生凹坑的SOI晶片。

23. 发明授权

US06884696B2 Method for producing bonding wafer 有权
标题翻译：接合晶片的制造方法
公开(公告)号：US06884696B2
公开(公告)日：2005-04-26
申请号：US10380979
申请日：2002-07-09
申请人： Hiroji Aga , Shinichi Tomizawa , Kiyoshi Mitani
发明人： Hiroji Aga , Shinichi Tomizawa , Kiyoshi Mitani
IPC分类号： H01L21/30 , H01L21/46 , H01L21/762 , H01L21/8238 , H01L27/12
CPC分类号： H01L21/76254 , Y10S438/977
摘要： A method for producing a bonded wafer by the ion implantation delamination method includes at least a step of bonding a bond wafer having a micro bubble layer formed by gaseous ion implantation and a base wafer serving as a support substrate and a step of delaminating the bond wafer at the micro bubble layer as a border to form a thin film on the base wafer. After the delamination of the bond wafer, the bonded wafer is subjected to a heat treatment in an atmosphere of an inert gas, hydrogen or a mixed gas thereof, then the bonded wafer is subjected to thermal oxidation to form a thermal oxide film on the surface of the thin film, and then the thermal oxide film is removed to reduce thickness of the thin film.
摘要翻译：通过离子注入分层方法制造接合晶片的方法至少包括将具有通过气体离子注入形成的微气泡层的接合晶片与作为支撑基板的基底晶片接合的步骤和将接合晶片分层的步骤在微气泡层作为边界在基底晶片上形成薄膜。在接合晶片分层后，在惰性气体，氢气或其混合气体的气氛中对接合的晶片进行热处理，然后将接合的晶片进行热氧化，以在表面上形成热氧化膜的薄膜，然后去除热氧化膜以减小薄膜的厚度。

24. 发明授权

US06239004B1 Method of forming oxide film on an SOI layer and method of fabricating a bonded wafer 失效
标题翻译：在SOI层上形成氧化膜的方法和制造接合晶片的方法
公开(公告)号：US06239004B1
公开(公告)日：2001-05-29
申请号：US09135976
申请日：1998-08-18
申请人： Hiroji Aga , Kiyoshi Mitani , Masatake Nakano
发明人： Hiroji Aga , Kiyoshi Mitani , Masatake Nakano
IPC分类号： H01L2130
CPC分类号： H01L21/76251 , H01L21/2007
摘要： In a method of fabricating a bonded wafer, an oxide film is first formed on the surface of at least one of two mirror-polished silicon wafers. The two silicon wafers are superposed such that the mirror-polished surfaces come into close contact with each other, and heat treatment is performed in order to join the wafers together firmly. Subsequently, the thickness of one of the wafers is reduced so as to yield a thin film, the surface of which is then polished and subjected to vapor-phase etching in order to make the thickness of the thin film uniform. Optionally, the vapor-phase-etched surface is then mirror-polished. The surface of the bonded wafer is oxidized, and the generated surface oxide film is then removed. In the method, the thickness of the oxide film formed on the surface of the bonded wafer is made not greater than 50 nm. The method reliably eliminates damage and crystal defects generated during etching in accordance with PACE method or subsequent mirror polishing, and thereby enables relatively simple and low cost manufacture of bonded wafers having a very thin SOI layer that has good thickness uniformity and excellent crystallinity.
摘要翻译：在制造接合晶片的方法中，首先在两个镜面抛光硅晶片中的至少一个的表面上形成氧化膜。将两个硅晶片叠置成使得镜面抛光表面彼此紧密接触，并且进行热处理以将晶片牢固地接合在一起。随后，减少一个晶片的厚度，以产生薄膜，然后对其表面进行抛光并进行气相蚀刻，以使薄膜的厚度均匀。任选地，将气相蚀刻表面进行镜面抛光。接合晶片的表面被氧化，然后除去生成的表面氧化膜。在该方法中，形成在接合晶片的表面上的氧化膜的厚度不大于50nm。该方法可以根据PACE法或随后的镜面抛光可靠地消除蚀刻期间产生的损伤和晶体缺陷，从而能够制造具有良好厚度均匀性和优异结晶度的非常薄的SOI层的接合晶片的相对简单且低成本的制造。

25. 发明申请

US20140186977A1 METHOD FOR CALCULATING WARPAGE OF BONDED SOI WAFER AND METHOD FOR MANUFACTURING BONDED SOI WAFER 有权
标题翻译：用于计算粘结SOI波形的波纹的方法和制造粘合SOI波形的方法
公开(公告)号：US20140186977A1
公开(公告)日：2014-07-03
申请号：US14240432
申请日：2012-08-21
申请人： Isao Yokokawa , Hiroji Aga , Yasushi Mizusawa
发明人： Isao Yokokawa , Hiroji Aga , Yasushi Mizusawa
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , G01B11/306 , G01B21/20 , H01L21/76254 , H01L21/76256 , H01L22/20
摘要： A method for calculating a warpage of a bonded SOI wafer includes: assuming that the epitaxial growth SOI wafer is a silicon single crystal wafer having the same dopant concentration as dopant concentration of the bond wafer; calculating a warpage A that occurs at the time of performing the epitaxial growth relative to the assumed silicon single crystal wafer; calculating a warpage B caused due to a thickness of the BOX layer of the epitaxial growth SOI wafer; determining a measured value of a warpage of the base wafer before bonding as a warpage C; and calculating a sum of the warpages (A+B+C) as the warpage of the bonded SOI wafer.
摘要翻译：用于计算接合SOI晶片的翘曲的方法包括：假设外延生长SOI晶片是具有与接合晶片的掺杂剂浓度相同的掺杂剂浓度的硅单晶晶片; 计算在相对于假定的硅单晶晶片进行外延生长时发生的翘曲A; 计算由外延生长SOI晶片的BOX层的厚度引起的翘曲B. 在接合之前确定基底晶片的翘曲的测量值作为翘曲C; 并计算翘曲（A + B + C）的和作为接合的SOI晶片的翘曲。

26. 发明申请

US20130316522A1 METHOD FOR MANUFACTURING SOI WAFER 有权
标题翻译： SOI WAFER制造方法
公开(公告)号：US20130316522A1
公开(公告)日：2013-11-28
申请号：US13990883
申请日：2011-11-18
申请人： Hiroji Aga , Isao Yokokawa , Satoshi Oka
发明人： Hiroji Aga , Isao Yokokawa , Satoshi Oka
IPC分类号： H01L21/02
CPC分类号： H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02658 , H01L21/31111 , H01L21/76254
摘要： The present invention is directed to a method for manufacturing an SOI wafer, the method by which treatment that removes the outer periphery of a buried oxide film to obtain a structure in which a peripheral end of an SOI layer of an SOI wafer is located outside a peripheral end of the buried oxide film, and, after heat treatment is performed on the SOI wafer in a reducing atmosphere containing hydrogen or an atmosphere containing hydrogen chloride gas, an epitaxial layer is formed on a surface of the SOI layer. As a result, there is provided a method that can manufacture an SOI wafer having a desired SOI layer thickness by performing epitaxial growth without allowing a valley-shaped step to be generated in an SOI wafer with no silicon oxide film in a terrace portion, the SOI wafer fabricated by an ion implantation delamination method.
摘要翻译：本发明涉及一种SOI晶片的制造方法，其中，除去掩埋氧化膜的外周，得到SOI晶片的SOI层的外周位于外侧的结构的方法并且在包含氢或含有氯化氢气体的气氛的还原气氛中对SOI晶片进行热处理后，在SOI层的表面上形成外延层。结果，提供了一种方法，其可以通过进行外延生长来制造具有期望的SOI层厚度的SOI晶片，而不会在在台面部分中没有氧化硅膜的SOI晶片中产生谷状步骤，通过离子注入分层方法制造的SOI晶片。

27. 发明授权

US08202787B2 Method for manufacturing SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US08202787B2
公开(公告)日：2012-06-19
申请号：US13129538
申请日：2009-11-11
申请人： Tohru Ishizuka , Norihiro Kobayashi , Hiroji Aga , Nobuhiko Noto
发明人： Tohru Ishizuka , Norihiro Kobayashi , Hiroji Aga , Nobuhiko Noto
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/84 , H01L22/12 , H01L22/20 , H01L29/78603
摘要： A method for manufacturing an SOI wafer having a buried oxide film with a predetermined thickness including performing a heat treatment for reducing a thickness of the buried oxide film on an SOI wafer material having an SOI layer formed on the buried oxide film, wherein a thickness of the SOI layer of the SOI wafer material to be subjected to the heat treatment for reducing the thickness of the buried oxide film is calculated on the basis of a ratio of the thickness of the buried oxide film to be reduced by the heat treatment with respect to a permissible value of an amount of change in an in-plane range of the buried oxide film, the change being caused by the heat treatment, and the SOI wafer material obtained by thinning the thickness of the bond wafer so as to have the calculated thickness of the SOI layer is subjected to the heat treatment for reducing the thickness of the buried oxide film.
摘要翻译：一种制造具有预定厚度的具有预定厚度的掩埋氧化物膜的SOI晶片的方法，包括：在掩埋氧化膜上形成SOI层的SOI晶片材料上进行用于减小掩埋氧化膜厚度的热处理，其中，基于通过热处理而减少的掩埋氧化膜的厚度的比率，计算要进行用于减小掩埋氧化膜的厚度的热处理的SOI晶片材料的SOI层相对于掩埋氧化膜的面内范围的变化量的允许值，由热处理引起的变化，以及通过使接合晶片的厚度变薄而获得的SOI晶片材料，使得具有计算出的厚度对SOI层进行热处理，以减小掩埋氧化膜的厚度。

28. 发明申请

US20100120223A1 METHOD FOR MANUFACTURING BONDED WAFER 有权
标题翻译：制造粘结波的方法
公开(公告)号：US20100120223A1
公开(公告)日：2010-05-13
申请号：US12452085
申请日：2008-07-03
申请人： Norihiro Kobayashi , Hiroji Aga , Yasuo Nagaoka , Nobuhiko Noto
发明人： Norihiro Kobayashi , Hiroji Aga , Yasuo Nagaoka , Nobuhiko Noto
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02057 , H01L21/26506
摘要： The present invention is a method for manufacturing a bonded wafer by an ion implantation delamination method including at least the steps of, bonding a bond wafer having a micro bubble layer formed by gas ion implantation with a base wafer to be a supporting substrate, delaminating the bond wafer along the micro bubble layer as a boundary to form a thin film on the base wafer, the method comprising, cleaning the bonded wafer after delaminating the bond wafer using ozone water; performing rapid thermal anneal process under a hydrogen containing atmosphere; forming a thermal oxide film on a surface layer of the bonded wafer by subjecting to heat treatment under an oxidizing gas atmosphere and removing the thermal oxide film; subjecting to heat treatment under a non-oxidizing gas atmosphere. As a result, the method for manufacturing a bonded wafer, which can remove the damage caused by the ion implantation and can suppress a occurrence of the concave defects without deterioration of surface roughness on the surface of the thin film of the bonded wafer after delamination is provided.
摘要翻译：本发明是一种通过离子注入分层方法制造接合晶片的方法，该方法至少包括将具有通过气体离子注入形成的微气泡层的接合晶片与基底晶片接合成为支撑基板的步骤，沿着微气泡层接合晶片作为边界以在基底晶片上形成薄膜，所述方法包括：在使用臭氧水分离所述接合晶片之后清洁所述接合晶片; 在含氢气氛下进行快速热退火工艺; 通过在氧化气体气氛下进行热处理并除去热氧化膜，在接合晶片的表面层上形成热氧化膜; 在非氧化性气体气氛下进行热处理。结果，能够去除离子注入引起的损伤的粘合晶片的制造方法，能够抑制脱层后的接合晶片的表面的表面粗糙度的劣化的凹陷缺陷的发生，提供。

29. 发明申请

US20080102603A1 Method for Producing Direct Bonded Wafer and Direct Bonded Wafer 有权
标题翻译：生产直接粘结晶片和直接粘结晶片的方法
公开(公告)号：US20080102603A1
公开(公告)日：2008-05-01
申请号：US11659283
申请日：2005-11-29
申请人： Norihiro Kobayashi , Toru Ishizuka , Tomohiko Ohta , Hiroji Aga , Yasuo Nagaoka
发明人： Norihiro Kobayashi , Toru Ishizuka , Tomohiko Ohta , Hiroji Aga , Yasuo Nagaoka
IPC分类号： H01L21/46
CPC分类号： H01L21/2007 , H01L21/76254
摘要： A method for producing a direct bonded wafer comprising: forming a thermal oxide film or a CVD oxide film on a surface of at least one of a bond wafer and a base wafer, and bonding the wafer to the other wafer via the oxide film; subsequently thinning the bond wafer to prepare a bonded wafer; and thereafter conducting a process of annealing the bonded wafer under an atmosphere including any one of an inert gas, hydrogen and a mixed gas of an inert gas and hydrogen so that the oxide film between the bond wafer and the base wafer is removed to bond the bond wafer directly to the base wafer. Thereby, there is provided a method for producing a direct bonded wafer in which generation of voids is reduced, and a direct bonded wafer with a low void count.
摘要翻译：一种直接接合晶片的制造方法，包括：在接合晶片和基底晶片中的至少一个的表面上形成热氧化膜或CVD氧化膜，并且经由所述氧化膜将所述晶片接合至所述另一方的晶片; 随后使接合晶片变薄以制备接合晶片; 然后在惰性气体，氢气和惰性气体与氢气的混合气体中的任何一种的气氛下进行退火接合晶片的工序，从而去除接合晶片和基底晶片之间的氧化膜，将晶片直接接合到基底晶片。因此，提供了一种制造空穴产生减少的直接接合晶片的方法和具有低空隙率的直接接合晶片。

30. 发明授权

US07320929B2 Method of fabricating SOI wafer 有权
标题翻译：制造SOI晶圆的方法
公开(公告)号：US07320929B2
公开(公告)日：2008-01-22
申请号：US10522413
申请日：2003-07-16
申请人： Hiroji Aga , Kiyoshi Mitani
发明人： Hiroji Aga , Kiyoshi Mitani
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/265 , H01L21/26506 , H01L21/76224 , H01L21/76254
摘要： In order to adjust thickness of a bonded silicon single crystal film 15 depending of thickness of an SOI layer 5 to be obtained, depth of formation d1+tx of a separatory ion implanted layer 4, measured from a first main surface J, in the separatory ion implanted layer formation step is adjusted through energy of the ion implantation. Dose of the ion implantation is set smaller as the depth of formation measured from the first main surface J becomes smaller. A smaller dose results in a smaller surface roughness of the separation surface, and makes it possible to reduce polishing stock removal of the separation surface of the bonded silicon single crystal film in the planarization step. Uniformity in the thickness of the SOI layer can consequently be improved even for the case where a thin SOI layer has to be formed. The present invention is therefore successful in providing a method of fabricating an SOI wafer capable of suppressing variations in the intra-wafer and inter-wafer uniformity of the thickness of the SOI layer to a sufficiently low level, even for the case where a required level of the thickness of the SOI layer is extremely small.
摘要翻译：为了根据所获得的SOI层5的厚度来调整键合硅单晶膜15的厚度，从第一主表面J测量的分离离子注入层4的形成深度d 1 + t x，通过离子注入的能量来调节分离离子注入层形成步骤。随着从第一主表面J测量的深度变小，离子注入的剂量变小。较小的剂量导致分离表面的较小的表面粗糙度，并且使得可以在平坦化步骤中减少接合的硅单晶膜的分离表面的抛光原料去除。因此，即使在必须形成薄的SOI层的情况下，也可以提高SOI层的厚度的均匀性。因此，本发明成功地提供了一种制造SOI晶片的方法，其能够将SOI层的厚度的晶片内和晶片间均匀度的均匀度抑制到足够低的水平，即使在所需的水平的情况下的SOI层的厚度非常小。

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