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21. 发明申请

US20100055337A1 Method for producing substrate for making microarray 有权
标题翻译：制备微阵列的基质的制备方法
公开(公告)号：US20100055337A1
公开(公告)日：2010-03-04
申请号：US12458637
申请日：2009-07-17
申请人： Wataru Kusaki , Takeshi Kinsho , Toshinobu Ishihara
发明人： Wataru Kusaki , Takeshi Kinsho , Toshinobu Ishihara
IPC分类号： B05D1/36
CPC分类号： G01N33/54353 , B01J2219/00527 , B01J2219/00596 , B01J2219/00612 , B01J2219/00626 , B01J2219/00637 , B01J2219/00659 , C40B40/04 , C40B50/18
摘要： There is disclosed a method for producing a substrate for making a microarray, the method comprising: at least, a step of forming a monomolecular film having orientated oxysilanyl groups toward an outmost surface on the substrate; and a step of forming a monomolecular film having orientated amino groups toward an outmost surface on the substrate by applying a solution containing a diamine compound to the oxysilanyl groups. There can be provided a method for producing a substrate for making a microarray in which density and orientation of amino groups orientated toward an outmost surface are controllable, and in addition, there is no delamination of a monomolecular film formed on the substrate.
摘要翻译：公开了一种制造微阵列的基板的制造方法，该方法至少包括：向基板的最外表面形成具有取向的氧联苯乙烯基的单分子膜的工序; 以及通过将含有二胺化合物的溶液施加到氧联苯乙酰基上而形成具有取向氨基的单分子膜朝向基板上的最外表面的步骤。可以提供一种制造用于制造微阵列的基板的方法，其中朝向最外表面取向的氨基的密度和取向是可控的，此外，在基板上形成的单分子膜不会发生分层。

22. 发明申请

US20080233521A1 Method for manufacturing substrate for making microarray 有权
标题翻译：制造微阵列基板的方法
公开(公告)号：US20080233521A1
公开(公告)日：2008-09-25
申请号：US12071889
申请日：2008-02-27
申请人： Wataru Kusaki , Takeshi Kinsho , Toshinobu Ishihara
发明人： Wataru Kusaki , Takeshi Kinsho , Toshinobu Ishihara
IPC分类号： G03F7/38
CPC分类号： G03F7/0397
摘要： A method for manufacturing a substrate for making a microarray wherein a monomolecular film for immobilizing a target molecule can be simply formed position-selectively in manufacture of the substrate for making the microarray is provided.A method for manufacturing a substrate for making a microarray, comprising, a step of forming a resist film on the substrate using a chemically amplified positive resist composition using a copolymer where a content of a monomer unit having a hydroxyl group is 5 mole % or less relative to total monomer units as a binder; a step of patterning the resist film; a step of forming a monomolecular film having a silicon oxide chain on the substrate having the patterned resist film; and subsequently a step of removing the resist film.
摘要翻译：提供了制造用于制造微阵列的基板的方法，其中用于固定靶分子的单分子膜可以简单地在用于制备微阵列的基板的制造中位置选择性地形成。一种制造微阵列的基板的制造方法，其特征在于，使用使用了具有羟基的单体单元的含量为5摩尔％以下的共聚物的化学放大型正性抗蚀剂组合物在基板上形成抗蚀剂膜的工序相对于作为粘合剂的总单体单元; 图案化抗蚀剂膜的步骤; 在具有图案化抗蚀剂膜的基板上形成具有氧化硅链的单分子膜的步骤; 随后除去抗蚀剂膜的步骤。

23. 发明申请

US20080233409A1 Method for manufacturing substrate for making microarray 审中-公开
标题翻译：制造微阵列基板的方法
公开(公告)号：US20080233409A1
公开(公告)日：2008-09-25
申请号：US12071885
申请日：2008-02-27
申请人： Wataru Kusaki , Takeshi Kinsho , Toshinobu Ishihara
发明人： Wataru Kusaki , Takeshi Kinsho , Toshinobu Ishihara
IPC分类号： B32B9/04
CPC分类号： B01J19/0046 , B01J2219/00317 , B01J2219/00608 , B01J2219/00617 , B01J2219/00621 , B01J2219/00626 , B01J2219/00635 , B01J2219/00637 , B01J2219/00722 , Y10T428/31663
摘要： A method for manufacturing a substrate for making a microarray, in which a monomolecular film is not detached when a target molecule is immobilized on the substrate using the monomolecular film having a silicon oxide chain is provided.A method for manufacturing a substrate for making a microarray comprising; at least a step of forming a monomolecular film on the substrate using a silane compound, wherein the monomolecular film is formed using a solution comprising the silane compound and a nitrogen-containing organic base in the step.
摘要翻译：提供一种制造微阵列的基板的方法，其中当使用具有氧化硅链的单分子膜将靶分子固定在基板上时，单分子膜不分离。一种制造微阵列用基板的方法，包括：至少使用硅烷化合物在基板上形成单分子膜的步骤，其中在该步骤中使用包含硅烷化合物和含氮有机碱的溶液形成单分子膜。

24. 发明申请

US20080233309A1 Method for manufacturing substrate for making microarray 有权
标题翻译：制造微阵列基板的方法
公开(公告)号：US20080233309A1
公开(公告)日：2008-09-25
申请号：US12073953
申请日：2008-03-12
申请人： Wataru Kusaki , Takeshi Kinsho , Toshinobu Ishihara
发明人： Wataru Kusaki , Takeshi Kinsho , Toshinobu Ishihara
IPC分类号： C23C14/28
CPC分类号： G01N33/54353 , B01J2219/00317 , B01J2219/00608 , B01J2219/00617 , B01J2219/00621 , B01J2219/00626 , B01J2219/00635 , B01J2219/00637 , B01J2219/00659 , B01J2219/00722
摘要： To provide a method for manufacturing a substrate for making a microarray which will ensure the secure immobilization of a material in a site-selective manner at a low cost. The method comprises the steps of: forming a monomolecular film on the surface of a substrate using a silane compound represented by the following general formula (1), Y3Si—(CH2)m—X (1) ,wherein m represents an integer from 3 to 20; X represents a hydroxyl group precursor functional group which will be converted to a hydroxyl group when exposed to acid; and Y independently represents a halogen atom or alkoxy group having 1-4 carbon atoms; and converting the hydroxyl group precursor functional group represented by X to a hydroxyl group; wherein the step of converting a hydroxyl group precursor functional group represented by X to a hydroxyl group comprises forming, on the monomolecular film, a polymer layer containing a compound represented by the following general formula (2) or (3),
摘要翻译：提供一种用于制造微阵列的基板的方法，该方法将以低成本确保以选址方式安全地固定材料。该方法包括以下步骤：使用由以下通式（1）表示的硅烷化合物在基材表面上形成单分子膜：<？在线式描述=“在线式”末端=“铅 “→> Y 3 -S-（CH 2）m -X（1）<βin-line-formula description =”In- 线式“end =”tail“？>，其中m表示3至20的整数; X表示当暴露于酸时将转化为羟基的羟基前体官能团; Y独立地表示具有1-4个碳原子的卤原子或烷氧基; 并将由X表示的羟基前体官能团转化为羟基; 其中将由X表示的羟基前体官能团转化为羟基的步骤包括在单分子膜上形成含有由以下通式（2）或（3）表示的化合物的聚合物层，

25. 发明申请

US20080233292A1 Method for manufacturing substrate for microarray 审中-公开
标题翻译：制造微阵列基板的方法
公开(公告)号：US20080233292A1
公开(公告)日：2008-09-25
申请号：US12076182
申请日：2008-03-14
申请人： Wataru Kusaki , Takeshi Kinsho , Toshinobu Ishihara
发明人： Wataru Kusaki , Takeshi Kinsho , Toshinobu Ishihara
IPC分类号： B05D3/00
CPC分类号： G01N33/54353
摘要： To provide a method for manufacturing a substrate for microarray which will allow, when a monomolecular film with silicon oxide chains formed on a substrate is used for the immobilization of a target molecule, a chemically amplified type resist film to be directly applied onto the substrate so as to simplify the process and enable fine processing, without causing therewith any problems such as the degradation of resolution and detachment, through more simplified procedures than are possible with the conventional method.The method for manufacturing a substrate for microarray comprises at least the steps of: forming a monomolecular film on the surface of a substrate using a silane compound represented by the following general formula (1), Y3Si—(CH2)m—X, (1) wherein m represents an integer from 3 to 20; X a hydroxyl group precursor functional group; and Y independently represent a halogen atom or an alkoxy group having 1-4 carbon atoms; and converting the hydroxyl group precursor functional group represented by X to a hydroxyl group.
摘要翻译：提供一种制造微阵列用基板的方法，当使用在基板上形成的具有氧化硅链的单分子膜用于固定靶分子时，将直接施加到基板上的化学放大型抗蚀剂膜为了简化处理并且能够通过比常规方法可能的更简化的程序，而不引起诸如分辨率和分离的劣化的任何问题的精细处理。制造微阵列基板的方法至少包括以下步骤：使用由以下通式（1）表示的硅烷化合物在基板表面上形成单分子膜，<？在线配方说明=“In 线“公式”end =“lead”？> Y 3 -X-（CH 2）2 -X，（1）<α在 -line-formula description =“In-line Formulas”end =“tail”？>其中m表示3至20的整数; X为羟基前体官能团; 和Y独立地表示卤素原子或具有1-4个碳原子的烷氧基; 并将由X表示的羟基前体官能团转化成羟基。

26. 发明授权

US06641975B2 Resist composition and patterning process 有权
公开(公告)号：US06641975B2
公开(公告)日：2003-11-04
申请号：US09928455
申请日：2001-08-14
申请人： Takanobu Takeda , Osamu Watanabe , Kazuhiro Hirahara , Kazunori Maeda , Wataru Kusaki , Shigehiro Nagura
发明人： Takanobu Takeda , Osamu Watanabe , Kazuhiro Hirahara , Kazunori Maeda , Wataru Kusaki , Shigehiro Nagura
IPC分类号： G03C173
CPC分类号： C08F220/30 , G03F7/0392 , Y10S430/106 , Y10S430/111 , Y10S430/115
摘要： A ternary copolymer of hydroxystyrene, tertiary alkyl (meth)acrylate and substitutable phenoxyalkyl (meth)acrylate having a Mw of 1,000-500,000 is blended as a base resin to formulate a chemically amplified, positive resist composition which has advantages including a significantly enhanced contrast of alkali dissolution rate before and after exposure, high sensitivity, high resolution, a satisfactory pattern profile after exposure, high etching resistance, and process adaptability.

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