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21. 发明申请

US20110260276A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110260276A1
公开(公告)日：2011-10-27
申请号：US13092633
申请日：2011-04-22
申请人： Shinzo ISHIBE , Katsuhiko Kitagawa
发明人： Shinzo ISHIBE , Katsuhiko Kitagawa
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14618 , H01L27/14681 , H01L31/0203 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device in which a glass substrate is attached to a surface of a semiconductor die with an adhesive layer being interposed therebetween, it is an object to fill a recess portion of an insulation film formed on a photodiode with the adhesive layer without bubbles therein. In a semiconductor die in which an optical semiconductor integrated circuit including a photodiode having a recess portion of an interlayer insulation film in the upper portion, an NPN bipolar transistor, and so on are formed, generally, a light shield film covers a portion except the recess portion region on the photodiode and except a dicing region. In the invention, an opening slit is further formed in the light shield film, extending from the recess portion to the outside of the recess portion, so as to attain the object.
摘要翻译：在玻璃基板与半导体管芯的表面连接的半导体器件中，其间插入有粘合剂层，其目的是填充在具有粘合层的光电二极管上形成的绝缘膜的凹部，而没有气泡。在其中形成有包括上部具有层间绝缘膜的凹部的光电二极管，NPN双极晶体管等的光半导体集成电路的半导体管芯中，通常，遮光膜覆盖除了凹陷部分区域，除了切割区域。在本发明中，在遮光膜中还形成有从凹部向凹部延伸的开口狭缝，以达到目的。

22. 发明申请

US20080253009A1 Front Surface Mirror 审中-公开
标题翻译：前表面镜
公开(公告)号：US20080253009A1
公开(公告)日：2008-10-16
申请号：US11910005
申请日：2006-05-24
申请人： Tadashi Onishi , Katsuhiko Kitagawa , Yasushi Ueno , Minoru Miyamoto
发明人： Tadashi Onishi , Katsuhiko Kitagawa , Yasushi Ueno , Minoru Miyamoto
IPC分类号： G02B5/08 , B05D5/06
CPC分类号： G03B21/28 , C03C17/36 , C03C17/361 , C03C17/3618 , C03C17/3649 , C03C17/3663 , C03C2217/78 , C23C14/225 , G02B5/0858
摘要： In a front surface mirror used for a rear projection television, in which a metal film and a metal oxide film are formed on a glass substrate in this order, the front surface mirror being characterized in that a surface of the glass substrate is reformed by ion etching and that the metal film is an Al film.
摘要翻译：在用于后投影电视机的前表面镜中，其中在玻璃基板上依次形成金属膜和金属氧化物膜，前表面镜的特征在于，玻璃基板的表面由离子并且金属膜是Al膜。

23. 发明授权

US08653529B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08653529B2
公开(公告)日：2014-02-18
申请号：US13092633
申请日：2011-04-22
申请人： Shinzo Ishibe , Katsuhiko Kitagawa
发明人： Shinzo Ishibe , Katsuhiko Kitagawa
IPC分类号： H01L29/04 , H01L21/339
CPC分类号： H01L27/14618 , H01L27/14681 , H01L31/0203 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device in which a glass substrate is attached to a surface of a semiconductor die with an adhesive layer being interposed therebetween, it is an object to fill a recess portion of an insulation film formed on a photodiode with the adhesive layer without bubbles therein. In a semiconductor die in which an optical semiconductor integrated circuit including a photodiode having a recess portion of an interlayer insulation film in the upper portion, an NPN bipolar transistor, and so on are formed, generally, a light shield film covers a portion except the recess portion region on the photodiode and except a dicing region. In the invention, an opening slit is further formed in the light shield film, extending from the recess portion to the outside of the recess portion, so as to attain the object.
摘要翻译：在玻璃基板与半导体管芯的表面连接的半导体器件中，其间插入有粘合剂层，其目的是填充在具有粘合层的光电二极管上形成的绝缘膜的凹部，而没有气泡。在其中形成有包括上部具有层间绝缘膜的凹部的光电二极管，NPN双极晶体管等的光半导体集成电路的半导体管芯中，通常，遮光膜覆盖除了凹陷部分区域，除了切割区域。在本发明中，在遮光膜中还形成有从凹部向凹部延伸的开口狭缝，以达到目的。

24. 发明授权

US08148811B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08148811B2
公开(公告)日：2012-04-03
申请号：US12438888
申请日：2007-08-22
申请人： Hiroyuki Shinogi , Katsuhiko Kitagawa , Kazuo Okada , Hiroshi Yamada
发明人： Hiroyuki Shinogi , Katsuhiko Kitagawa , Kazuo Okada , Hiroshi Yamada
IPC分类号： H01L23/12 , H01L31/0232
CPC分类号： H01L27/14618 , B81C1/00269 , H01L23/315 , H01L27/14625 , H01L27/14685 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/00
摘要： This invention is directed to offer a semiconductor device in which a cavity space is easily provided in a specific region when a supporting member is bonded to a semiconductor substrate through an adhesive layer, and its manufacturing method. A resist layer is applied to an entire top surface of the semiconductor substrate 2, and exposure to transfer a pattern is performed. By subsequent development and selective removal of the resist layer, the resist layer is formed into a shape of a plurality of columnar structures 4. Then, an adhesive material made of an epoxy resin or the like is applied to the entire top surface of the semiconductor substrate 2. The adhesive material is gathered around the columnar structures 4 by itself to form an adhesive layer 5. Therefore, in contrast, the adhesive layer 5 does not deposit in a region where the cavity is to be formed. Then, the supporting member 6 is bonded through the columnar structures 4 and the adhesive layer 5. By bonding the supporting member 6, there is formed the cavity 7 surrounded with the semiconductor substrate 2, the columnar structures 3 and the supporting member 6.
摘要翻译：本发明旨在提供一种半导体器件及其制造方法，其中当支撑构件通过粘合剂层结合到半导体衬底时，在特定区域中容易设置空腔。将抗蚀剂层施加到半导体衬底2的整个顶表面，并且进行曝光以转印图案。通过随后的抗蚀剂层的显影和选择性去除，将抗蚀剂层形成为多个柱状结构体4的形状。然后，将由环氧树脂等制成的粘合剂材料施加到半导体的整个顶表面基材2.粘合剂材料自身聚集在柱状结构4周围以形成粘合剂层5.因此，相反，粘合剂层5不会沉积在要形成空腔的区域中。然后，支撑部件6通过柱状结构体4和粘合剂层5接合。通过粘合支撑部件6，形成有被半导体基板2，柱状结构体3和支撑部件6包围的空腔7。

25. 发明申请

US20100065929A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100065929A1
公开(公告)日：2010-03-18
申请号：US12438879
申请日：2007-08-22
申请人： Kazuo Okada , Katsuhiko Kitagawa , Hiroshi Yamada
发明人： Kazuo Okada , Katsuhiko Kitagawa , Hiroshi Yamada
IPC分类号： H01L29/84 , H01L31/0232
CPC分类号： H01L27/14625 , H01L23/3135 , H01L27/14618 , H01L31/0203 , H01L31/02325 , H01L2924/0002 , H01L2924/3025 , H01L2924/00
摘要： An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A device element 3 is formed on a front surface of a semiconductor substrate 4, and a sealing body 1 is attached to the semiconductor substrate 4 with an adhesive layer 6 being interposed therebetween. A main surface (a back surface) of the sealing body 1 which faces the semiconductor substrate 4 is curved inward, and there is a given space (a cavity 2) between the sealing body 1 and the semiconductor substrate 4. Since the back surface of the sealing body 1 is curved, the sealing body 1 is used as a planoconcave lens (a reverse direction) as well as a sealing member for the device element 3.
摘要翻译：本发明的目的是提供一种较小的半导体器件，其制造过程被简化并且制造成本降低。此外，本发明的目的是提供一种具有空腔的半导体器件。器件元件3形成在半导体衬底4的前表面上，并且密封体1被粘附在半导体衬底4上，其间夹有粘合剂层6。密封体1的面向半导体基板4的主表面（背面）向内弯曲，并且在密封体1和半导体基板4之间存在给定的空间（空腔2）。由于背面密封体1弯曲，密封体1用作平凸透镜（反方向）以及用于装置元件3的密封构件。

26. 发明授权

US08653612B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08653612B2
公开(公告)日：2014-02-18
申请号：US12438879
申请日：2007-08-22
申请人： Kazuo Okada , Katsuhiko Kitagawa , Hiroshi Yamada
发明人： Kazuo Okada , Katsuhiko Kitagawa , Hiroshi Yamada
IPC分类号： H01L29/84
CPC分类号： H01L27/14625 , H01L23/3135 , H01L27/14618 , H01L31/0203 , H01L31/02325 , H01L2924/0002 , H01L2924/3025 , H01L2924/00
摘要： An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A device element 3 is formed on a front surface of a semiconductor substrate 4, and a sealing body 1 is attached to the semiconductor substrate 4 with an adhesive layer 6 being interposed therebetween. A main surface (a back surface) of the sealing body 1 which faces the semiconductor substrate 4 is curved inward, and there is a given space (a cavity 2) between the sealing body 1 and the semiconductor substrate 4. Since the back surface of the sealing body 1 is curved, the sealing body 1 is used as a planoconcave lens (a reverse direction) as well as a sealing member for the device element 3.
摘要翻译：本发明的目的是提供一种较小的半导体器件，其制造过程被简化并且制造成本降低。此外，本发明的目的是提供一种具有空腔的半导体器件。器件元件3形成在半导体衬底4的前表面上，并且密封体1被粘附在半导体衬底4上，其间夹有粘合剂层6。密封体1的面向半导体基板4的主表面（背面）向内弯曲，并且在密封体1和半导体基板4之间具有给定的空间（空腔2）。由于背面密封体1弯曲，密封体1用作平凸透镜（反方向）以及用于装置元件3的密封构件。

27. 发明申请

US20090321903A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090321903A1
公开(公告)日：2009-12-31
申请号：US12438888
申请日：2007-08-22
申请人： Hiroyuki Shinogi , Katsuhiko Kitagawa , Kazuo Okada , Hiroshi Yamada
发明人： Hiroyuki Shinogi , Katsuhiko Kitagawa , Kazuo Okada , Hiroshi Yamada
IPC分类号： H01L23/02 , H01L21/50
CPC分类号： H01L27/14618 , B81C1/00269 , H01L23/315 , H01L27/14625 , H01L27/14685 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/00
摘要： This invention is directed to offer a semiconductor device in which a cavity space is easily provided in a specific region when a supporting member is bonded to a semiconductor substrate through an adhesive layer, and its manufacturing method. A resist layer is applied to an entire top surface of the semiconductor substrate 2, and exposure to transfer a pattern is performed. By subsequent development and selective removal of the resist layer, the resist layer is formed into a shape of a plurality of columnar structures 4. Then, an adhesive material made of an epoxy resin or the like is applied to the entire top surface of the semiconductor substrate 2. The adhesive material is gathered around the columnar structures 4 by itself to form an adhesive layer 5. Therefore, in contrast, the adhesive layer 5 does not deposit in a region where the cavity is to be formed. Then, the supporting member 6 is bonded through the columnar structures 4 and the adhesive layer 5. By bonding the supporting member 6, there is formed the cavity 7 surrounded with the semiconductor substrate 2, the columnar structures 3 and the supporting member 6.
摘要翻译：本发明旨在提供一种半导体器件及其制造方法，其中当支撑构件通过粘合剂层结合到半导体衬底时，在特定区域中容易设置空腔。将抗蚀剂层施加到半导体衬底2的整个顶表面，并且进行曝光以转印图案。通过随后的抗蚀剂层的显影和选择性去除，将抗蚀剂层形成为多个柱状结构体4的形状。然后，将由环氧树脂等制成的粘合剂材料施加到半导体的整个顶表面基材2.粘合剂材料自身聚集在柱状结构4周围以形成粘合剂层5.因此，相反，粘合剂层5不会沉积在要形成空腔的区域中。然后，支撑部件6通过柱状结构体4和粘合剂层5接合。通过粘合支撑部件6，形成有被半导体基板2，柱状结构体3和支撑部件6包围的空腔7。

28. 发明授权

US06424051B1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06424051B1
公开(公告)日：2002-07-23
申请号：US09500271
申请日：2000-02-08
申请人： Hiroyuki Shinogi , Nobuyuki Takai , Ryoji Tokushige , Katsuhiko Kitagawa
发明人： Hiroyuki Shinogi , Nobuyuki Takai , Ryoji Tokushige , Katsuhiko Kitagawa
IPC分类号： H01L2328
CPC分类号： H01L23/564 , H01L23/3185 , H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： To improve the moisture resistance of a chip size package, a seal ring 4 is made up of tungsten plugs and metal electrodes 11 and 12. Further, a spacer is formed on both or either of a first flank 13 and a second flank 14. The spacer can be formed on all interlayer insulating films extended to a dicing line part 3, whereby multiple seal rings can be provided.
摘要翻译：为了提高芯片尺寸封装的耐湿性，密封环4由钨插头和金属电极11和12组成。此外，在第一侧面13和第二侧面14两者上形成间隔件。可以在延伸到切割线部分3的所有层间绝缘膜上形成间隔物，从而可以提供多个密封环。

29. 发明授权

US08686526B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08686526B2
公开(公告)日：2014-04-01
申请号：US11942506
申请日：2007-11-19
申请人： Katsuhiko Kitagawa , Hiroyuki Shinogi , Shinzo Ishibe , Hiroshi Yamada
发明人： Katsuhiko Kitagawa , Hiroyuki Shinogi , Shinzo Ishibe , Hiroshi Yamada
IPC分类号： H01L31/0203 , H01L31/18
CPC分类号： H01L31/0203 , H01L31/0224 , H01L31/18 , H01L2224/48091 , H01L2224/48227 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： The invention is directed to providing a semiconductor device receiving a blue-violet laser, of which the reliability and yield are enhanced. A device element converting a blue-violet laser into an electric signal is formed on a front surface of a semiconductor substrate. An optically transparent substrate is attached to the front surface of the semiconductor substrate with an adhesive layer being interposed therebetween. The adhesive layer contains transparent silicone. Since the front surface of the device element is covered by the optically transparent substrate, foreign substances are prevented from adhering to the front surface of the device element. Furthermore, the adhesive layer is covered by the optically transparent substrate. This prevents the adhesive layer from being exposed to outside air, thereby preventing the degradation of the adhesive layer 6 due to a blue-violet laser.
摘要翻译：本发明旨在提供一种接收蓝紫色激光的半导体器件，其可靠性和产量得到提高。在半导体衬底的前表面上形成将蓝紫色激光转换为电信号的器件元件。光学透明基板以其间插入粘合剂层的方式附着于半导体基板的前表面。粘合层含有透明硅胶。由于器件元件的前表面被光学透明基板覆盖，因此防止了异物粘附到器件元件的前表面。此外，粘合剂层被光学透明基板覆盖。这防止粘合剂层暴露于外部空气，从而防止由于蓝紫色激光而导致的粘合剂层6的劣化。

30. 发明申请

US20090026610A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090026610A1
公开(公告)日：2009-01-29
申请号：US12177696
申请日：2008-07-22
申请人： Katsuhiko Kitagawa , Hiroyuki Shinogi
发明人： Katsuhiko Kitagawa , Hiroyuki Shinogi
IPC分类号： H01L23/48 , H01L21/58
CPC分类号： H01L23/5389 , H01L21/6836 , H01L23/3121 , H01L23/3185 , H01L24/12 , H01L2221/68327 , H01L2224/16 , H01L2924/01077 , H01L2924/01078 , H01L2924/12044 , H01L2924/14
摘要： The invention provides a semiconductor device having high reliability and a method of manufacturing the same. The semiconductor device of the invention has pad electrodes formed on a semiconductor die near the side surface portion thereof and connected to a semiconductor integrated circuit or the like in the semiconductor die, a supporting body formed on the pad electrodes, an insulation film formed on the side and back surface portions of the semiconductor die, wiring layers connected to the back surfaces of the pad electrodes and extending from the side surface portion onto the back surface portion of the semiconductor die so as to contact the insulation film, and a second protection film formed on the side surface portion of the supporting body.
摘要翻译：本发明提供一种具有高可靠性的半导体器件及其制造方法。本发明的半导体器件具有形成在半导体管芯的侧表面部分上的焊盘电极，并连接到半导体管芯中的半导体集成电路等，形成在焊盘电极上的支撑体，形成在半导体芯片上的绝缘膜半导体管芯的侧表面部分和背表面部分，连接到焊盘电极的背表面并且从侧表面部分延伸到半导体管芯的背表面部分以与绝缘膜接触的布线层，以及第二保护膜形成在支撑体的侧面部上。

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