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    • 21. 发明授权
    • Scanning optical systems
    • 扫描光学系统
    • US5737112A
    • 1998-04-07
    • US499730
    • 1995-07-07
    • Takashi Iizuka
    • Takashi Iizuka
    • G02B26/12G02B26/08
    • G02B26/124G02B26/125
    • A scanning optical system that includes a light source for emitting a beam of light, a light deflector for deflecting the beam of light in the main scanning direction, and a scanning lens system which receives a beam of light deflected by the light deflector for focusing the deflected beam of light onto a scanning surface. At least one surface of a lens in the scanning lens system is formed in such a manner so as to have the cross-sectional shape of a non-circular arc in any sub-scanning plane so as to correct the spherical aberration of the scanning lens system in sub-scanning planes each extending parallel to the sub-scanning direction.
    • 一种扫描光学系统,包括用于发射光束的光源,用于在主扫描方向上偏转光束的光偏转器,以及接收由偏光板偏转的光束用于聚焦的扫描透镜系统 偏转光束到扫描表面上。 扫描透镜系统中的透镜的至少一个表面形成为在任何副扫描平面中具有非圆弧的横截面形状,以校正扫描透镜的球面像差 系统在子扫描平面中平行于副扫描方向延伸。
    • 27. 发明授权
    • Semiconductor device, method of manufacturing the same and application
thereof
    • 半导体装置及其制造方法及其应用
    • US4293868A
    • 1981-10-06
    • US9968
    • 1979-02-06
    • Takashi IizukaMasayuki Horie
    • Takashi IizukaMasayuki Horie
    • H01L29/73H01L21/331H01L27/07H01L27/082H01L27/02
    • H01L27/0755H01L27/0825Y10S438/983
    • This invention relates to a power transistor which includes a driving transistor and an output transistor in the Darlington connection. This invention has for its object to prevent the power transistor from being destroyed by a surge in such a way that a surge destruction-preventing Zener diode is connected between the base and the collector or the emitter of the power transistor. Especially, it is intended to dispose the Zener diode within a semiconductor substrate together with the power transistor. According to this invention, a p-n junction for the Zener diode is formed between a semiconductor region continuous to a collector region of the transistor and a semiconductor region continuous to a base region thereof. The p-n junction is surrounded by the base region of the transistor, whereby it is formed within a bulk and is prevented from reaching the surface of the semiconductor substrate.
    • 本发明涉及一种在达林顿连接中包括驱动晶体管和输出晶体管的功率晶体管。 本发明的目的是防止功率晶体管被浪涌破坏,使得防止浪涌破坏的齐纳二极管连接在功率晶体管的基极和集电极或发射极之间。 特别地,旨在将齐纳二极管与功率晶体管一起配置在半导体衬底内。 根据本发明,用于齐纳二极管的p-n结形成在与晶体管的集电极区域连续的半导体区域和与其基极区域连续的半导体区域之间。 p-n结被晶体管的基极区域包围,从而形成在体内并被防止到达半导体衬底的表面。
    • 29. 发明授权
    • Portable bookstand
    • 便携式书柜
    • US07066437B2
    • 2006-06-27
    • US10506770
    • 2003-03-04
    • Takashi Iizuka
    • Takashi Iizuka
    • A47B97/04
    • A47B23/04A47B23/043
    • The base of a conventional bookstand on which to support a book is a rectangular base having an area substantially as large as an opened book whereas the invention employs a method of placing a book on a crisscross form defined by a horizontal base and a vertical base crossing each other. The horizontal and vertical bases are in the form of elongated rectangles of substantially the same size, and the vertical base placed on the horizontal base is supported for slide turning movement around a support shaft of the horizontal base. On the right and left sides of the horizontal base, the right and left side pages of a book are held down by transparent page binders having guide rods slidable in guide grooves formed inside the horizontal base. An opening/closing stand is provided on the back surface of the horizontal base. The bookstand of the invention has the four parts laminatable in the plane of the horizontal base so as to reduce the size.
    • 传统书架的底座,用于支撑书籍是具有与打开的书本基本一样大的面积的矩形基座,而本发明采用一种将书籍放置在由水平基准和垂直基准交叉 彼此。 水平和垂直底座是基本上相同尺寸的细长矩形的形式,并且支撑在水平底座上的垂直底座围绕水平底座的支撑轴进行滑动转动。 在水平底座的右侧和左侧,书本的右侧和左侧页面被透明的页面粘合剂压住,该页面粘合剂具有可在形成在水平基底内的引导槽中滑动的导杆。 在水平底座的后表面上设有开/关支架。 本发明的书架具有在水平底座的平面中可叠置的四个部分,以减小尺寸。