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21. 发明申请

US20100012705A1 Reflow furnace and heater for blowing hot air 有权
标题翻译：回流炉和加热器吹热风
公开(公告)号：US20100012705A1
公开(公告)日：2010-01-21
申请号：US10585344
申请日：2004-12-21
申请人： Hideki Nakamura , Tomotake Kagaya , Tsutomu Hiyama
发明人： Hideki Nakamura , Tomotake Kagaya , Tsutomu Hiyama
IPC分类号： B23K3/04 , F24H3/00
CPC分类号： F27B9/3005 , B23K1/0016 , B23K1/008 , B23K1/012 , B23K3/047 , B23K2101/42 , F27B9/10
摘要： A reflow furnace using a conventional heater for blowing hot air has difficulty in reducing Δt and in stabilizing the oxygen concentration at a low level. In addition, it is difficult to uniformly discharge hot air from the discharge holes in a perforated plate of a conventional heater for blowing hot air. In a reflow furnace according to the present invention, the total area per unit area of discharge holes formed in a perforated plate in a heater for blowing hot air installed in a main heating zone is 1.5-5 times the total area per unit area of the discharge holes formed in a perforated plate of a heater for blowing hot air installed in a preheating zone. A heater for blowing hot air has a body divided into three chambers by partitions.
摘要翻译：使用常规加热器吹入热空气的回流炉难以减少Deltat并将氧浓度稳定在低水平。此外，在用于吹热风的传统加热器的多孔板中，难以均匀地排出来自排放孔的热空气。在根据本发明的回流炉中，在主加热区域中安装的用于吹入热风的加热器中的多孔板中形成的排出孔的每单位面积的总面积为单位面积的总面积的1.5-5倍排出孔形成在用于吹入安装在预热区中的热风的加热器的多孔板中。用于吹热空气的加热器具有通过隔板分成三个室的主体。

22. 外观设计

USD595194S1 Bumper of motor vehicle 有权
标题翻译：汽车保险杠
公开(公告)号：USD595194S1
公开(公告)日：2009-06-30
申请号：US29309675
申请日：2008-09-25
申请人： Kunihiko Kurisu , Akira Tamatani , Kosuke Takahashi , Yuta Takanashi , Hideki Nakamura
设计人： Kunihiko Kurisu , Akira Tamatani , Kosuke Takahashi , Yuta Takanashi , Hideki Nakamura

23. 发明授权

US07276511B2 Benzylamine derivative 有权
标题翻译：苄胺衍生物
公开(公告)号：US07276511B2
公开(公告)日：2007-10-02
申请号：US10566252
申请日：2004-08-02
申请人： Masaaki Nagasawa , Nobuo Kawase , Nobuyuki Tanaka , Hideki Nakamura , Naoki Tsuzuike , Masakazu Murata
发明人： Masaaki Nagasawa , Nobuo Kawase , Nobuyuki Tanaka , Hideki Nakamura , Naoki Tsuzuike , Masakazu Murata
IPC分类号： A61K31/438 , C07D495/10
CPC分类号： C07D471/10 , A61K31/438 , A61K31/451 , C07D211/58
摘要： The invention provides a compound which exhibits satisfactory peroral absorbability and excellent antagonistic activity against NK-1 receptor or NK-2 receptor. The compound is a benzylamine derivative represented by formula (1) or a salt thereof
摘要翻译：本发明提供了对NK-1受体或NK-2受体表现出令人满意的口服吸收性和优异的拮抗活性的化合物。该化合物是由式（1）表示的苄胺衍生物或其盐

24. 发明申请

US20060194841A1 Benzylamine derivative 有权
标题翻译：苄胺衍生物
公开(公告)号：US20060194841A1
公开(公告)日：2006-08-31
申请号：US10566252
申请日：2004-08-02
申请人： Masaaki Nagasawa , Nobuo Kawase , Nobuyuki Tanaka , Hideki Nakamura , Naoki Tsuzuike , Masakazu Murata
发明人： Masaaki Nagasawa , Nobuo Kawase , Nobuyuki Tanaka , Hideki Nakamura , Naoki Tsuzuike , Masakazu Murata
IPC分类号： A61K31/445 , C07D211/68 , C07D401/02 , A61K31/4545 , A61K31/453
CPC分类号： C07D471/10 , A61K31/438 , A61K31/451 , C07D211/58
摘要： The invention provides a compound which exhibits satisfactory peroral absorbability and excellent antagonistic activity against NK-1 receptor or NK-2 receptor. The compound is a benzylamine derivative represented by formula (1) or a salt thereof.
摘要翻译：本发明提供了对NK-1受体或NK-2受体表现出令人满意的口服吸收性和优异的拮抗活性的化合物。该化合物是由式（1）表示的苄胺衍生物或其盐。

25. 发明申请

US20050082607A1 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050082607A1
公开(公告)日：2005-04-21
申请号：US10976855
申请日：2004-11-01
申请人： Katsumi Nakamura , Shigeru Kusunoki , Hideki Nakamura
发明人： Katsumi Nakamura , Shigeru Kusunoki , Hideki Nakamura
IPC分类号： H01L21/331 , H01L21/336 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/423 , H01L29/45 , H01L29/49 , H01L29/739 , H01L29/76 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/402 , H01L29/407 , H01L29/4232 , H01L29/4238 , H01L29/456 , H01L29/495 , H01L29/4958 , H01L29/66348 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device of the present invention is provided with a power device which has a semiconductor substrate having a first main surface and a second main surface that are opposed to each other and an insulating gate structure on the first main surface side, wherein a main current flows between the first main surface and the second main surface, that is to say, is provided with an insulating gate type MOS transistor structure wherein the thickness (t1) of the semiconductor substrate is no less than 50 μm and no greater than 250 μm and a low ON voltage and a high withstanding capacity against breakdown are implemented in the first main surface. Thereby, a low ON voltage, the maintaining of the withstanding capacity against breakdown and the reduction of a switching loss on the high voltage side can be implemented.
摘要翻译：本发明的半导体器件具有电源装置，该功率器件具有：具有彼此相对的第一主表面和第二主表面的半导体衬底，以及在第一主表面侧的绝缘栅极结构，其中主电流在第一主表面和第二主表面之间流动，即具有绝缘栅型MOS晶体管结构，其中半导体衬底的厚度（t 1> 1）不小于50 在第一主表面上实施了不超过250个妈妈的低导通电压和高耐破坏能力。因此，可以实现低导通电压，耐击穿能力的保持和高压侧的开关损耗的降低。

26. 发明申请

US20050062105A1 Insulated gate transistor 有权
标题翻译：绝缘栅晶体管
公开(公告)号：US20050062105A1
公开(公告)日：2005-03-24
申请号：US10976931
申请日：2004-11-01
申请人： Katsumi Nakamura , Shigeru Kusunoki , Hideki Nakamura
发明人： Katsumi Nakamura , Shigeru Kusunoki , Hideki Nakamura
IPC分类号： H01L21/331 , H01L21/336 , H01L29/06 , H01L29/08 , H01L29/40 , H01L29/423 , H01L29/45 , H01L29/49 , H01L29/739 , H01L29/76 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0696 , H01L29/0847 , H01L29/402 , H01L29/407 , H01L29/4232 , H01L29/4238 , H01L29/456 , H01L29/495 , H01L29/4958 , H01L29/66348 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7813
摘要： A semiconductor device of the present invention is provided with a power device which has a semiconductor substrate having a first main surface and a second main surface that are opposed to each other and an insulating gate structure on the first main surface side, wherein a main current flows between the first main surface and the second main surface, that is to say, is provided with an insulating gate type MOS transistor structure wherein the thickness (t1) of the semiconductor substrate is no less than 50 μm and no greater than 250 μm and a low ON voltage and a high withstanding capacity against breakdown are implemented in the first main surface. Thereby, a low ON voltage, the maintaining of the withstanding capacity against breakdown and the reduction of a switching loss on the high voltage side can be implemented.
摘要翻译：本发明的半导体器件具有电源装置，该功率器件具有：具有彼此相对的第一主表面和第二主表面的半导体衬底，以及在第一主表面侧的绝缘栅极结构，其中主电流在第一主表面和第二主表面之间流动，即具有绝缘栅型MOS晶体管结构，其中半导体衬底的厚度（t1）不小于50μm且不大于250μm，并且在第一主表面中实施低导通电压和高耐受击穿能力。因此，可以实现低导通电压，耐击穿能力的保持和高压侧的开关损耗的降低。

27. 发明授权

US5948841A Process for production of stabilized oxymethylene copolymer 失效
标题翻译：稳定的甲醛共聚物的生产方法
公开(公告)号：US5948841A
公开(公告)日：1999-09-07
申请号：US894164
申请日：1997-07-29
申请人： Hideki Nakamura
发明人： Hideki Nakamura
IPC分类号： C08G2/30 , C08K5/00 , C08K5/134 , C08K5/18 , C08K5/098
CPC分类号： C08K5/005 , C08G2/30 , C08K5/1345
摘要： A process for producing a stabilized oxymethylene copolymer, which comprises subjecting a crude oxymethylene copolymer to terminal stabilization in an extruder (A) having a terminal-stabilizing zone and a vacuum zone for volatile components removal to obtain a terminal-stabilized oxymethylene copolymer, separately melt-kneading a polyoxymethylene and a stabilizer and/or an additive in other extruder (B), feeding the resulting melt-kneading mixture in a molten state into a section of the extruder (A) following the vacuum zone for volatile components removal so that the proportions of the polyoxymethylene to be fed from the extruder (B) and the crude oxymethylene copolymer to be subjected to terminal stabilization in the extruder (A) become 1:3 to 1:45 by weight ratio, and kneading the polyoxymethylene, the stabilizer and/or the additive and the terminal-stabilized oxymethylene copolymer.
摘要翻译： PCT No.PCT / JP96 / 00149 Sec。 371日期1997年7月29日第 102（e）日期1997年7月29日PCT 1996年1月26日PCT PCT。第WO96 / 23825号公报日本1988年8月8日制造稳定化的甲醛共聚物的方法，其包括在具有末端稳定区域和真空区域的挤出机（A）中将粗甲醛共聚物端稳定化，以除去挥发性组分以获得末端稳定化甲醛共聚物，在其他挤出机（B）中单独熔融捏合聚甲醛和稳定剂和/或添加剂，将所得熔融捏合混合物以熔融状态进料到挤出机（A）的一部分中，在真空区之后进行挥发性使得从挤出机（B）中进料的聚甲醛和在挤出机（A）中进行终端稳定化的粗甲醛共聚物的比例按重量比计为1:3至1:45的比例混合，聚甲醛，稳定剂和/或添加剂和末端稳定的甲醛共聚物。

28. 发明授权

US5925899A Vertical type insulated gate bipolar transistor having a planar gate structure 失效
标题翻译：具有平面栅极结构的垂直型绝缘栅双极晶体管
公开(公告)号：US5925899A
公开(公告)日：1999-07-20
申请号：US977667
申请日：1997-11-24
申请人： Hideki Nakamura , Tadaharu Minato
发明人： Hideki Nakamura , Tadaharu Minato
IPC分类号： H01L29/78 , H01L21/331 , H01L29/739 , H01L29/74 , H01L31/111
CPC分类号： H01L29/66333 , H01L29/7395
摘要： A first metal electrode layer is formed to be electrically connected with a p base region formed in an n drift region. A second metal electrode layer which is electrically connected with an emitter region provided in the p base region is formed. A direct current power supply unit is provided to be electrically connected with the first and second metal electrode layers. The direct current power supply unit functions as means for applying forward bias to a pn junction between the n emitter region and the p base region.
摘要翻译：第一金属电极层形成为与形成在n漂移区域中的p基区电连接。形成与设置在p基区域中的发射极区域电连接的第二金属电极层。提供直流电源单元以与第一和第二金属电极层电连接。直流电源单元用作将正向偏压施加到n个发射极区域和p个基极区域之间的pn结的装置。

29. 发明授权

US5665177A Method for preparing permanent magnet material, chill roll, permanent magnet material, and permanent magnet material powder 失效
标题翻译：制备永磁材料，冷却辊，永磁材料和永磁材料粉末的方法
公开(公告)号：US5665177A
公开(公告)日：1997-09-09
申请号：US878523
申请日：1992-05-05
申请人： Akira Fukuno , Hideki Nakamura , Tetsuhito Yoneyama
发明人： Akira Fukuno , Hideki Nakamura , Tetsuhito Yoneyama
IPC分类号： B22D11/06 , B22F1/00 , B22F3/00 , H01F1/053 , H01F1/057 , H01F41/02 , H01F1/032
CPC分类号： B22D11/0611 , H01F1/0571 , Y10S428/90 , Y10T428/2457 , Y10T428/31
摘要： A permanent magnet material is prepared by cooling with a chill roll a molten alloy containing R wherein R is at least one rare earth element inclusive of Y, Fe or Fe and Co, and B. The chill roll has a plurality of circumferentially extending grooves in a circumferential surface, the distance between two adjacent ones of the grooves at least in a region with which the molten alloy comes in contact being 100 to 300 .mu.m average in an arbitrary cross section containing a roll axis. Permanent magnet material of stable performance is obtained since the variation of cooling rate caused by a change in the circumferential speed of the chill roll is small. The variation of cooling rate is small even when it is desired to change the thickness of the magnet by altering the circumferential speed. The equalized groove pitch results in a minimized variation in crystal grain diameter.
摘要翻译：通过用冷却辊冷却含有R的熔融合金来制备永久磁铁材料，其中R是至少一种包括Y，Fe或Fe和Co以及B的稀土元素。冷却辊具有多个周向延伸的凹槽至少在熔融合金接触的区域中，两个相邻的槽之间的距离在包含辊轴的任意横截面中平均为100〜300μm。由于冷却辊的圆周速度的变化引起的冷却速度的变化小，所以获得了稳定性能的永久磁铁材料。即使希望通过改变圆周速度来改变磁体的厚度，冷却速度的变化也很小。均匀的沟槽间距导致晶粒直径的最小化。

30. 发明授权

US5641363A Sintered magnet and method for making 失效
标题翻译：烧结磁体及其制造方法
公开(公告)号：US5641363A
公开(公告)日：1997-06-24
申请号：US364756
申请日：1994-12-27
申请人： Akira Fukuno , Hideki Nakamura , Gouichi Nishizawa
发明人： Akira Fukuno , Hideki Nakamura , Gouichi Nishizawa
IPC分类号： B22F3/11 , H01F1/057 , H01F1/03
CPC分类号： H01F1/0577 , B22F3/1103 , B22F2998/10
摘要： In the manufacture of a rare earth sintered magnet of the Nd.sub.2 Fe.sub.14 B system, closed voids are formed in the magnet in a predetermined fraction to minimize shrinkage. Unlike open voids or pores in conventional semi-sintered magnets, the closed voids do not incur magnet corrosion since they do not communicate to the magnet exterior. By minimizing shrinkage during sintering in this way, a ring or plate-shaped thin wall anisotropic magnet can be prepared without machining for shape correction, achieving a cost reduction and a productivity improvement. Since a high density compact has a high deflective strength, it is easy to handle, minimizing cracking and chipping between the compacting and sintering steps.
摘要翻译：在制造Nd2Fe14B系稀土烧结磁体时，以预定的比例在磁体中形成封闭的空隙，以使收缩率最小化。与常规半烧结磁体中的开放空隙或孔不同，封闭的空隙不会引起磁体腐蚀，因为它们不与磁体外部连通。通过以这种方式使烧结期间的收缩最小化，可以在不进行形状校正的机械加工的情况下制备环形或板状的薄壁各向异性磁体，从而实现成本降低和生产率提高。由于高密度压块具有高的偏转强度，因此易于处理，使压实和烧结步骤之间的裂纹和碎裂最小化。

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