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21. 发明专利

JP2007215302A Inverter apparatus 审中-公开
标题翻译：逆变器装置
公开(公告)号：JP2007215302A
公开(公告)日：2007-08-23
申请号：JP2006031422
申请日：2006-02-08
申请人： Toshiba Corp , 株式会社東芝
发明人： TADA NOBUMITSU , MORIKAWA RYUICHI , OBE TOSHIHARU , SEKIYA HIRONORI , NINOMIYA TAKESHI , YOSHIOKA SHINPEI
IPC分类号： H02M7/48 , H01L23/36 , H02M7/5387
CPC分类号： H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an inverter apparatus for improving the durability against an external force. SOLUTION: The inverter apparatus has a positive conductor 33, a negative conductor 37 and a AC conductor 35 bonded to a surface of a heat sink 22, an IGBT and a diode bonded between the positive conductor 33 and the AC conductor 35, an IGBT and a diode bonded between the negative conductor 37 and the AC conductor 35, a positive electrode terminal 39 provided in the positive conductor 33, a negative electrode terminal 40 provided in the negative conductor 37, and output terminals 41, 42 provided in the AC conductor 35. The positive electrode terminal 39, the negative electrode terminal 40 and the output terminals 41, 42 are bent so as to be parallel to the surface of the heat sink 22. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于提高耐外力的耐久性的逆变器装置。解决方案：逆变器装置具有接合到散热器22的表面的正导体33，负导体37和AC导体35，连接在正导体33和AC导体35之间的IGBT和二极管，接合在负导体37和AC导体35之间的IGBT和二极管，设置在正导体33中的正极端子39，设置在负导体37中的负极端子40，以及设置在负导体37中的输出端子41,42。 AC导体35.正极端子39，负极端子40和输出端子41,42被弯曲成平行于散热器22的表面。（C）2007年，JPO和INPIT

22. 发明专利

JP2003086741A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2003086741A
公开(公告)日：2003-03-20
申请号：JP2001274898
申请日：2001-09-11
申请人： TOSHIBA CORP
发明人： HIRAMOTO HIROYUKI , SEKIYA HIRONORI , SHIMIZU TOSHIO , MATSUMOTO HISAAKI , KIJIMA KENJI
IPC分类号： H01L23/34 , H01L23/40
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device in which insulating property and heat dissipating property are improved. SOLUTION: A trapezoidal part 13 is formed on a radiating plate 11, and an insulating substrate 101 on which a semiconductor element is mounted is directly bonded on the trapezoidal part 13, thereby improving heat dissipating property. When solder overflows in the case of bonding the insulating substrate 101, the solder flows below the trapezoidal part 13 since it exists. As a result, generation of imperfect insulation caused by overflowed solder is prevented. The distance between the insulating substrate 101 and the radiating plate 11 is increased, so that insulating property is improved.

23. 发明专利

JP2002122629A SERVICE LIFE TESTING DEVICE FOR ELECTRIC EQUIPMENT, AND COMPUTER-READABLE RECORDING MEDIUM HAVING PROGRAM RECORDED THEREFOR 失效
公开(公告)号：JP2002122629A
公开(公告)日：2002-04-26
申请号：JP2000315707
申请日：2000-10-16
申请人： TOSHIBA CORP
发明人： HIRAMOTO HIROYUKI , SEKIYA HIRONORI , SHIMIZU TOSHIO , MATSUMOTO HISAAKI
IPC分类号： G01R31/12
摘要： PROBLEM TO BE SOLVED: To provide a service life testing device capable of easily measuring a service life characteristic of electric equipment, insulation material or the like in a short time. SOLUTION: This service life testing device has a transformer 3 and a control panel 1 applying a gradually increasing voltage to a sample; a voltmeter 5 measuring the applied voltage: and a computer 21 measuring a time to generation of a breakdown of the sample, calculating a service life coefficient n and a constant A showed in a service life characteristic equation: t≡A×V-n (wherein t is a service life time, V is the voltage, n is the service life coefficient, and A is the constant) from the measured time and the voltage applied till then to finish the service life characteristic equation.

24. 发明专利

JP2000294087A RESIN MOLD VACUUM VALVE 失效
公开(公告)号：JP2000294087A
公开(公告)日：2000-10-20
申请号：JP9603799
申请日：1999-04-02
申请人： TOSHIBA CORP
发明人： ITO YOSHIHIRO , SHIMIZU TOSHIO , KINOSHITA SUSUMU , MAKISHIMA SATOSHI , SEKIYA HIRONORI
IPC分类号： H01H33/66
摘要： PROBLEM TO BE SOLVED: To provide a vacuum valve excellent in crack resistance against varying temp. and capable of being constructed small. SOLUTION: A first fiber layer 12 is formed so that a roving material of glass fiber is wound on an insulating cylinder 2 and a stationary side end plate 3 of a vacuum valve 1. At a coarse pitch, roving material is also wound on this first fiber layer 12 so that a second fiber layer 13 is formed. The vacuum valve furnished with these fiber layers is put in a die, and therein epoxy resin in injected so that a resin molding layer 14 is formed on the outside of the vacuum valve 1. A resin layer having a high glass fiber density and low coefficient of thermal expansion is formed in a part near the periphery of the insulating cylinder 2, and thereby exfoliation of the interface is precluded.

25. 发明专利

JPH10300658A MEDIUM RECORDING PROGRAM FOR MEASURING DIFFUSION COEFFICIENT AND LIQUID CONTENT, AND EQUIPMENT INCORPORATING MEDIUM 失效
公开(公告)号：JPH10300658A
公开(公告)日：1998-11-13
申请号：JP11148297
申请日：1997-04-28
申请人： TOSHIBA CORP
发明人： HIRAMOTO HIROYUKI , KINOSHITA SUSUMU , MAKISHIMA SATOSHI , SEKIYA HIRONORI
IPC分类号： G01N5/04
摘要： PROBLEM TO BE SOLVED: To facilitate measurement while shortening the measuring time by inputting the time variation of moisture emitted form a sample to a computer, approximating the relation between the emitted quantity of moisture and the time by a specified expression and calculating the content of moisture from the results of approximation. SOLUTION: A vaporizer 1 comprises an enclosed container applied with a cover for a solid sample 3 in the evaporator 1 or taking out the solid sample 3 therefrom. The evaporator 1 incorporates a temperature controllable heater 4 and dry nitrogen or inert gas flows from a cylinder 5 through a gas flowmeter 6 into the vaporizer 1. Moisture emitted from the solid sample 3 enters into a moisture meter 2 which delivers the quantity of moisture to a computer 7. The computer 7 records the time data along with the quantity of emitted moisture and approximates the relation between the emitted quantity of moisture and the time by an expression; Y=A+B.exp(-C.t) (Y: quantity of moisture, t: time, A, B, C: coefficients to be determined) and calculates the content of moisture and the diffusion coefficient from the results of approximation.

26. 发明专利

JP2014187088A Method for manufacturing power semiconductor device and power semiconductor device 审中-公开
标题翻译：用于制造功率半导体器件和功率半导体器件的方法
公开(公告)号：JP2014187088A
公开(公告)日：2014-10-02
申请号：JP2013059349
申请日：2013-03-22
申请人： Toshiba Corp , 株式会社東芝
发明人： KURI YUUJI , SEKIYA HIRONORI , SASAKI HARUKA , KOTANI KAZUYA , TADA NOBUMITSU , MATSUMURA HITOTSUGU , IGUCHI TOMOHIRO
IPC分类号： H01L21/304 , B24C1/10 , H01L25/07 , H01L25/18
CPC分类号： H01L23/49866 , H01L23/3735 , H01L23/49844 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/29111 , H01L2224/29311 , H01L2224/29339 , H01L2224/29347 , H01L2224/29355 , H01L2224/32225 , H01L2224/45144 , H01L2224/45147 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2224/83101 , H01L2224/83205 , H01L2224/83455 , H01L2224/83825 , H01L2224/8384 , H01L2924/12042 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00014 , H01L2924/014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a power semiconductor device capable of improving product reliability by suppressing thermal expansion and thermal contraction by a cold heat cycle, and a power semiconductor device manufactured by the method.SOLUTION: A method for manufacturing a power semiconductor device comprising a base substrate having a conductor layer on a surface thereof and a semiconductor element mounted on the base substrate according to an embodiment includes a step of forming a curing layer on a surface of the conductor layer.
摘要翻译：要解决的问题：提供一种能够通过抑制热循环的热膨胀和热收缩来提高产品可靠性的方法以及通过该方法制造的功率半导体器件。功率半导体器件包括在其表面上具有导体层的基底基板和安装在基底基板上的半导体元件，包括在导体层的表面上形成固化层的步骤。

27. 发明专利

JP2014049576A Power semiconductor module and the inverter device 审中-公开
标题翻译：功率半导体模块和逆变器器件
公开(公告)号：JP2014049576A
公开(公告)日：2014-03-17
申请号：JP2012190669
申请日：2012-08-30
申请人： Toshiba Corp , 株式会社東芝
发明人： TADA NOBUMITSU , KOTANI KAZUYA , KURI YUUJI , SEKIYA HIRONORI
IPC分类号： H01L25/18 , H01L25/07 , H02M7/48 , H02M7/5387
CPC分类号： H01L2224/34 , H01L2224/37011 , H01L2224/84801 , H01L2924/00014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/00 , H01L2224/37099 , H01L2224/37599 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a power semiconductor module that allows preventing the occurrence of difference in inductance for each phase and downsizing an inverter device, and to provide the inverter device.SOLUTION: A power semiconductor module has a positive terminal electrically connected to one surface of a switch element having a chip shape and has a negative terminal electrically connected to the other surface of the switch element. Internal wiring has two terminals, is formed in a substantially band shape, and is disposed so that one terminal is adjacent to the negative terminal and the other terminal is adjacent to the positive terminal. A resin portion molds the switch element and the internal wiring so that the positive terminal, negative terminal, and terminals of the internal wiring are protruded.
摘要翻译：要解决的问题：提供一种功率半导体模块，其能够防止每相的电感差异的发生和逆变器装置的小型化，并提供逆变器装置。解决方案：功率半导体模块具有与一个电连接的正极端子具有芯片形状的开关元件的表面，并且具有与开关元件的另一个表面电连接的负极端子。内部布线具有两个端子，形成为大致带状，并且被布置成使得一个端子与负极端子相邻，而另一个端子与正极端子相邻。树脂部分模制开关元件和内部布线，使得内部布线的正极端子，负极端子和端子突出。

28. 发明专利

JP2011018736A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2011018736A
公开(公告)日：2011-01-27
申请号：JP2009161651
申请日：2009-07-08
申请人： Toshiba Corp , 株式会社東芝
发明人： SEKIYA HIRONORI , OBE TOSHIHARU , NINOMIYA TAKESHI
IPC分类号： H01L23/34
CPC分类号： H01L2224/48091 , H01L2224/48137 , H01L2224/48472 , H01L2924/1301 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device capable of improving durability while improving heat dissipation performance.SOLUTION: The semiconductor device 1 includes: a radiator 2; a conductor 13 mounted on the radiator 2 and provided with a connection surface 13a; a conductor 14 mounted on the radiator 2 and provided with a connection surface 14a; a semiconductor element 16a provided with a first electrode surface 21 in surface contact with the connection surface 13a of the conductor 13 and an electrode surface 22 in surface contact with the connection surface 14a of the conductor 14, which is the electrode surface 22 formed at a position facing the electrode surface 21; and a sealing member 19 which includes a hardening resin and seals the conductor 13, the conductor 14 and the semiconductor element 16a.
摘要翻译：要解决的问题：提供能够在提高散热性能的同时提高耐久性的半导体器件。解决方案：半导体器件1包括：散热器2; 安装在散热器2上并具有连接表面13a的导体13; 安装在散热器2上并具有连接表面14a的导体14; 设置有与导体13的连接面13a表面接触的第一电极面21和与导体14的连接面14a表面接触的电极面22的半导体元件16a，导体14的连接面14a 面向电极表面21的位置; 以及包括硬化树脂并密封导体13，导体14和半导体元件16a的密封构件19。

29. 发明专利

JP2007068302A Power semiconductor device and semiconductor power converter 有权
标题翻译：功率半导体器件和半导体电源转换器
公开(公告)号：JP2007068302A
公开(公告)日：2007-03-15
申请号：JP2005249679
申请日：2005-08-30
申请人： Toshiba Corp , 株式会社東芝
发明人： OBE TOSHIHARU , TADA NOBUMITSU , MORIKAWA RYUICHI , SEKIYA HIRONORI , NINOMIYA TAKESHI , YOSHIOKA SHINPEI
IPC分类号： H02M7/515 , H01L23/34 , H01L25/07 , H01L25/18
CPC分类号： H01L2224/49111 , H01L2924/1305 , H01L2924/13055 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a small power semiconductor device and a semiconductor power converter that have their cooling capability significantly enhanced and are excellent in manufacturability. SOLUTION: The power semiconductor device includes: multiple first semiconductor chips 171, 181 that construct an upper arm in one phase; multiple second semiconductor chips 174, 184 that construct a lower arm in one phase; a first conductor 11 joined with the positive poles of the first semiconductor chips; a second conductor 12 joined with the negative poles of the second semiconductor chips; a third conductor 13 joined with the negative poles of the first semiconductor chips and the positive poles of the second semiconductor chips; and heat dissipation means 15 that dissipates heat from the first semiconductor chips and the second semiconductor chips. The first conductor 11, second conductor 12, third conductor 13, first semiconductor chips, and second semiconductor chips are so disposed that the bond areas between the first semiconductor ships and second semiconductor chips and the first conductor 11 to the third conductor 13 are not parallel with the surface of the heat radiating means 15. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决的问题：提供一种能够显着提高其冷却能力并且制造性优异的小功率半导体器件和半导体功率转换器。解决方案：功率半导体器件包括：在一相中构造上臂的多个第一半导体芯片171,181; 在第一相中构造下臂的多个第二半导体芯片174,184; 与第一半导体芯片的正极连接的第一导体11; 与第二半导体芯片的负极连接的第二导体12; 与第一半导体芯片的负极和第二半导体芯片的正极连接的第三导体13; 以及从第一半导体芯片和第二半导体芯片散热的散热装置15。第一导体11，第二导体12，第三导体13，第一半导体芯片和第二半导体芯片被布置成使得第一半导体船舶与第二半导体芯片之间的接合区域与第一导体11至第三导体13之间的接合区域不平行与散热装置15的表面。（C）2007，JPO＆INPIT

30. 发明专利

JP2007042796A Power semiconductor device and inverter equipment 审中-公开
标题翻译：功率半导体器件和逆变器设备
公开(公告)号：JP2007042796A
公开(公告)日：2007-02-15
申请号：JP2005224231
申请日：2005-08-02
申请人： Toshiba Corp , 株式会社東芝
发明人： TADA NOBUMITSU , MORIKAWA RYUICHI , OBE TOSHIHARU , SEKIYA HIRONORI , NINOMIYA TAKESHI , YOSHIOKA SHINPEI
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L2224/49111 , H01L2924/1305 , H01L2924/13055 , H01L2924/30107 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an inverter equipment of a small size capable of reducing inductance that depends on wiring in a power semiconductor device, to efficiently suppress the rise of a temperature caused by energization. SOLUTION: A positive electrode terminal 38 on which a positive pole of DC power supply is applied is electrically connected by way of a positive-side conductor 51, first conductor 27, IGBTs191A-191D, diodes 201A-201C, and an AC output conductor 29 in this order. A negative electrode terminal 39 on which a negative pole is applied is electrically connected by way of a negative side conductor 30, IGBTs192A-192D, diodes 202A-202C, a second conductor 28, and an AC output conductor 29 in this order. A cooling device 24 is covered with an insulating resin sheet 25 at its upper surface on which devices or the like are mounted for cooling. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了有效地抑制由通电引起的温度升高，提供能够减小依赖于功率半导体器件中的布线的电感的小尺寸的逆变器设备。
解决方案：施加有直流电源的正极的正极端子38通过正极导体51，第一导体27，IGBT191A-191D，二极管201A-201C和AC 输出导体29。通过负极导体30，IGBT192A-192D，二极管202A-202C，第二导体28和AC输出导体29依次电连接负极的负极端子39。冷却装置24在其上表面安装有绝缘树脂片25，其上安装有装置等用于冷却。版权所有（C）2007，JPO＆INPIT

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