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21. 发明授权

US07551255B2 Organic light emitting display device 有权
标题翻译：有机发光显示装置
公开(公告)号：US07551255B2
公开(公告)日：2009-06-23
申请号：US11486595
申请日：2006-07-13
申请人： Jae Kyeong Jeong , Jae Bon Koo , Hyun Soo Shin , Yeon Gon Mo , Jong Han Jeong , Hun Jung Lee , Sung Jin Kim
发明人： Jae Kyeong Jeong , Jae Bon Koo , Hyun Soo Shin , Yeon Gon Mo , Jong Han Jeong , Hun Jung Lee , Sung Jin Kim
IPC分类号： G02F1/1343 , G02F1/1345 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L29/78603 , G02F1/13454 , H01L27/1214 , H01L27/1218 , H01L27/3244 , H01L2251/5338
摘要： An organic light emitting display device including a flexible substrate and a plurality of thin film transistors (TFTs) formed on the substrate. The plurality of TFTs formed on the substrate include a pixel transistor for driving a pixel and a driver circuit transistor for driving a driver circuit, and a longitudinal direction of a channel region of the pixel transistor makes a first predetermined angle with a direction in which the substrate is bent. As such, it is possible to minimize a change in the electrical property of the TFTs formed on the flexible substrate and to thus reduce a change in the amount of current that flows in the channels of the TFTs.
摘要翻译：一种有机发光显示装置，包括形成在基板上的柔性基板和多个薄膜晶体管（TFT）。形成在基板上的多个TFT包括用于驱动像素的像素晶体管和用于驱动驱动电路的驱动电路晶体管，像素晶体管的沟道区的纵向方向与第基板弯曲。因此，可以使形成在柔性基板上的TFT的电性能的变化最小化，从而减小在TFT的沟道中流动的电流量的变化。

22. 发明授权

US07514104B2 Composition containing an extract of pericarpium zanthoxyli for protecting brain cells and improving memory 失效
标题翻译：含有花椒油提取物的组合物，用于保护脑细胞和改善记忆
公开(公告)号：US07514104B2
公开(公告)日：2009-04-07
申请号：US11283635
申请日：2005-11-21
申请人： Sung Jin Kim
发明人： Sung Jin Kim
IPC分类号： A61K36/00 , A61K36/67
CPC分类号： A61K36/00 , A23L33/105 , A61K36/758
摘要： The present invention relates to a composition containing an extract of pericapium zanthoxyli for protecting brain cells and improving memory, and the composition of this invention induces an effect of protecting brain cells for modern people under brain damage that is caused by environmental factors, such as various stresses, drinking and smoking habits, therefore, it can be used for medicines and health supplements inducing an effect of preventing, treating degenerative disorders and improving memory.
摘要翻译：本发明涉及一种含有保护脑细胞和提高记忆力的花椒叶提取物的组合物，本发明的组合物诱发了由环境因素引起的脑损伤的脑细胞的保护作用，压力，饮酒和吸烟习惯，因此可用于诱发预防，治疗退行性疾病和改善记忆力的药物和保健品。

23. 发明申请

US20090034427A1 MULTIPLE-INPUT MULTIPLE-OUTPUT (MIMO) COMMUNICATION METHOD AND APPARATUS USING THE SAME 有权
标题翻译：多输入多输出（MIMO）通信方法和装置
公开(公告)号：US20090034427A1
公开(公告)日：2009-02-05
申请号：US12166724
申请日：2008-07-02
申请人： Ill Soo SOHN , Byong Ok Lee , Won Mu Lee , Kwang Bok Lee , Sung Jin Kim , Goochul Chung
发明人： Ill Soo SOHN , Byong Ok Lee , Won Mu Lee , Kwang Bok Lee , Sung Jin Kim , Goochul Chung
IPC分类号： H04L12/26
CPC分类号： H04B7/0632 , H04B7/0452 , H04B7/0617
摘要： A multiple-input multiple-output (MIMO) communication method and apparatus are provided. A MIMO communication apparatus includes a selected beamforming vector determining unit to determine a selected beamforming vector corresponding to a selected user, a performance information generating unit to generate performance information corresponding to where a non-selected beamforming vector is allocated to a non-selected user, and an additional beamforming vector selecting unit to select an additional beamforming vector corresponding to the non-selected user based on the performance information.
摘要翻译：提供了多输入多输出（MIMO）通信方法和装置。 MIMO通信装置包括：选择的波束形成向量确定单元，用于确定与所选择的用户对应的所选择的波束形成向量;演奏信息生成单元，用于生成对应于未选择的波束成形向量被分配给未选择的用户的位置的演奏信息; 以及附加的波束形成向量选择单元，用于基于所述性能信息选择与所述未选择的用户相对应的附加波束形成向量。

24. 发明申请

US20090001446A1 FLASH MEMORY DEVICE AND METHODS FOR FABRICATING THE SAME 审中-公开
标题翻译：闪存存储器件及其制造方法
公开(公告)号：US20090001446A1
公开(公告)日：2009-01-01
申请号：US12147392
申请日：2008-06-26
申请人： Sung Jin Kim
发明人： Sung Jin Kim
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/7881 , H01L29/40114 , H01L29/66825
摘要： A method of fabricating a flash memory device includes forming a stack electrode on a semiconductor substrate; forming a side spacer on a side wall of the stack electrode; forming a photo-resist film pattern with a predetermined thickness on the side wall of the side spacer; and forming a source/drain junction on the semiconductor substrate through ion implant using the photo-resist film as a mask for ion implant.
摘要翻译：制造闪速存储器件的方法包括在半导体衬底上形成堆叠电极; 在所述堆叠电极的侧壁上形成侧面间隔物; 在侧面间隔物的侧壁上形成具有预定厚度的光致抗蚀剂膜图案; 以及通过使用光致抗蚀剂膜作为离子注入掩模的离子注入在半导体衬底上形成源极/漏极结。

25. 发明申请

US20080011341A1 Dish washing machine 审中-公开
标题翻译：洗碗机
公开(公告)号：US20080011341A1
公开(公告)日：2008-01-17
申请号：US11806522
申请日：2007-05-31
申请人： Eui Soo Kim , Yong Woon Han , Young Ho Kwon , Shimotera Kennichi , Sung Jin Kim , Jung Chan Ryu , Jae Young Choi
发明人： Eui Soo Kim , Yong Woon Han , Young Ho Kwon , Shimotera Kennichi , Sung Jin Kim , Jung Chan Ryu , Jae Young Choi
IPC分类号： B08B3/02 , B08B3/04
CPC分类号： A47L15/4221 , A47L15/4246
摘要： A dish washing machine capable of controlling the amount of wash water used based on the quantity of dishes and preventing a drop of the injection pressure of the wash water. The dish washing machine includes a washing tub, main nozzles disposed in the washing tub to constantly inject wash water when washing dishes, a sub nozzle disposed in the washing tub to selectively inject wash water when washing dishes, a sump mounted in the wash tub, a main channel disposed in the sump, the main channel being connected with the main nozzles, a sub channel disposed in the sump while being separated from the main channel and connected to the sub nozzle, and a channel control valve disposed in the sub channel to intermit a flow of wash water flowing to the sub nozzle.
摘要翻译：一种洗碗机，其能够基于餐具的数量控制洗涤水的使用量并防止洗涤水的注射压力下降。洗碗机包括：洗涤桶，设置在洗涤桶中的主喷嘴，用于在洗碗时不断注入洗涤水;设置在洗涤桶中的子喷嘴，用于在洗碗时选择性地注入洗涤水;安装在洗涤桶中的贮槽; 设置在所述集油槽中的主通道，所述主通道与所述主喷嘴连接;副通道，设置在所述集油槽中，同时与所述主通道分离并连接到所述副喷嘴;以及通道控制阀，其设置在所述副通道中中断流向副喷嘴的洗涤水流。

26. 发明授权

US07238324B2 Microfluidic device for the controlled movement of fluid 失效
标题翻译：用于流体控制运动的微流体装置
公开(公告)号：US07238324B2
公开(公告)日：2007-07-03
申请号：US10615441
申请日：2003-07-07
申请人： Jong Soo Ko , Hyun Chul Yoon , Hae Sik Yang , Dae-Sik Lee , Kwang Hyo Chung , Hyeon Bong Pyo , Sung Jin Kim , Yun Tae Kim
发明人： Jong Soo Ko , Hyun Chul Yoon , Hae Sik Yang , Dae-Sik Lee , Kwang Hyo Chung , Hyeon Bong Pyo , Sung Jin Kim , Yun Tae Kim
IPC分类号： B01L3/02
CPC分类号： B01L3/502707 , B01L3/50273 , B01L3/502746 , B01L2200/16 , B01L2300/0645 , B01L2300/0867 , B01L2400/0406 , B01L2400/0442 , B01L2400/0487 , B01L2400/0688 , B01L2400/086 , B01L2400/088 , B33Y70/00 , B33Y80/00 , Y10T436/25
摘要： A microfluidic device for controlling the flow of a micro amount of fluid is provided. The microfluidic device is manufactured by binding a sensing substrate including a sensing electrode, an electrode interconnect, and a electrode pad, with a channel substrate including at least two fluid inlet ports, a chamber, and a channel, wherein a first fluid injected via one of the fluid inlet ports flows by natural capillary force, and a second fluid injected via another fluid inlet port is forced to flow by an external pump. The microfluidic device controls fluid flow and flow stoppage by a combination of natural capillary flow and an externally applied pressure as a result of the action of a pump.
摘要翻译：提供了用于控制微量流体流动的微流体装置。微流体装置通过将包括感测电极，电极互连和电极焊盘的感测衬底与包括至少两个流体入口端口，腔室和通道的通道衬底结合来制造，其中通过一个注入的第一流体的流体入口端口通过天然毛细管力流动，并且通过另一流体入口喷射的第二流体被迫使外部泵流动。由于泵的作用，微流体装置通过天然毛细管流动和外部施加的压力的组合来控制流体流动和流动停止。

27. 发明授权

US06901963B2 Micro fluidic device for controlling flow time of micro fluid 有权
标题翻译：用于控制微流体流动时间的微流体装置
公开(公告)号：US06901963B2
公开(公告)日：2005-06-07
申请号：US10731211
申请日：2003-12-08
申请人： Sung Jin Kim , Yong Beom Shin , HaeSik Yang , Dae Sik Lee , Kyu Won Kim , Se Ho Park , Yun Tae Kim
发明人： Sung Jin Kim , Yong Beom Shin , HaeSik Yang , Dae Sik Lee , Kyu Won Kim , Se Ho Park , Yun Tae Kim
IPC分类号： B01J19/00 , G05D7/01 , F15B21/00
CPC分类号： G05D7/0186 , Y10T137/2076 , Y10T137/2224
摘要： Provided is a micro fluidic device that can control a flow time of micro fluid by using a capillary phenomenon. The micro fluidic device includes: a flow channel for flowing fluid, the flow channel being formed between a top substrate and a bottom substrate or between a top substrate, a bottom substrate, and a middle substrate; a flow blocking surface for stopping a flow of the fluid in the flow channel temporarily; and a hump for delaying the flow formed in the line of continuity with the flow blocking surface. The micro fluidic device of the present research can control the flow time in a simple manner.
摘要翻译：提供了一种微流体装置，其可以通过使用毛细管现象来控制微流体的流动时间。微流体装置包括：用于流动流体的流动通道，流动通道形成在顶部基板和底部基板之间，或者在顶部基板，底部基板和中间基板之间; 用于暂停流道中的流体流动的阻流表面; 以及用于延迟在与阻流表面连续的线中形成的流动的隆起。本研究的微流体装置可以以简单的方式控制流动时间。

28. 发明授权

US06840048B2 Dynamically uncoupled can combustor 失效
标题翻译：动态脱耦罐式燃烧器
公开(公告)号：US06840048B2
公开(公告)日：2005-01-11
申请号：US10255114
申请日：2002-09-26
申请人： Fei Han , Osman Saim Dinc , Abdul-Azeez Mohammed-Fakir , Sung Jin Kim
发明人： Fei Han , Osman Saim Dinc , Abdul-Azeez Mohammed-Fakir , Sung Jin Kim
IPC分类号： F23R3/18 , F01D9/02 , F23R3/16 , F23R3/42 , F23R3/46 , F02C3/14 , F02C7/24
CPC分类号： F01D9/02 , F01D9/023 , F23R2900/00005
摘要： Respective combustion gas streams are generated in a can combustor. The streams are channeled downstream into an annular turbine nozzle. And, dynamic interaction of circumferentially adjacent combustion gas streams is suppressed axially between the cans and the nozzle.
摘要翻译：在罐式燃烧器中产生各种燃烧气体流。流被引导到下游进入环形涡轮喷嘴。并且，在罐和喷嘴之间轴向地抑制周向相邻的燃烧气体流的动态相互作用。

29. 发明授权

US6153768A Benzopyran derivatives 有权
标题翻译：苯并吡喃衍生物
公开(公告)号：US6153768A
公开(公告)日：2000-11-28
申请号：US319616
申请日：1999-06-08
申请人： Jae Chon Jo , Sung Dae Park , Hyun Suk Lim , Ju Su Kim , Sung Jin Kim , Kazumi Morikawa , Yoshitake Kanbe , Masahiro Nishimoto , Myung-Hwa Kim
发明人： Jae Chon Jo , Sung Dae Park , Hyun Suk Lim , Ju Su Kim , Sung Jin Kim , Kazumi Morikawa , Yoshitake Kanbe , Masahiro Nishimoto , Myung-Hwa Kim
IPC分类号： A61K31/352 , A61K31/353 , A61K31/382 , A61K31/453 , A61K31/496 , A61P5/32 , A61P15/00 , C07D311/38 , C07D311/58 , C07D335/06 , C07D311/04
CPC分类号： C07D335/06 , C07D311/38 , C07D311/58
摘要： The present invention relates to a novel benzopyran derivative having anti-estrogenic activity. More specifically, the present invention relates to a novel benzopyran derivative represented by formula (I) and pharmaceutically acceptable salt thereof, in which ----- represents a single bond or a double bond; R1 and R2 independently of one another represent hydrogen, hydroxy or OR group, wherein R represents acyl or alkyl; R3 represents hydrogen, lower alkyl or halogeno lower alkyl, provided that when ----- represents a double bond, R3 is not present; R4 represents hydrogen or lower alkyl; A represents a group of formula a, b, c or d; R5, R6 and R7 independently of one another represent hydrogen, alkyl, halogenoalkyl, alkenyl or halogenoalkenyl, or R6 and R7 together with nitrogen atom to which they are bound can form a 4- to 8-membered heterocyclic ring which can be substituted with R5; X represents O, S, or NR8, wherein R8 represents hydrogen or lower alkyl; m denotes an integer of 2 to 15; n denotes an integer of 0 to 2; and p denotes an integer of 0 to 4.
摘要翻译： PCT No.PCT / KR97 / 00265 Sec。 371 1999年6月8日第 102（e）日期1999年6月8日PCT 1997年12月13日PCT公布。公开号WO98 / 25916 PCT 日期：1998年6月18日本发明涉及具有抗雌激素活性的新型苯并吡喃衍生物。更具体地说，本发明涉及由式（I）表示的新型苯并吡喃衍生物及其药学上可接受的盐，其中+ E，uns ----- + EE表示单键或双键; R 1和R 2彼此独立地表示氢，羟基或OR基，其中R表示酰基或烷基; R3表示氢，低级烷基或卤代低级烷基，条件是当+ E时，不为 - + EE表示双键，R3不存在; R4代表氢或低级烷基; A表示式a，b，c或d的基团; R 5，R 6和R 7彼此独立地表示氢，烷基，卤代烷基，烯基或卤代烯基，或者R 6和R 7与它们所连接的氮原子一起可以形成可被R 5取代的4至8元杂环 ; X表示O，S或NR8，其中R8表示氢或低级烷基; m表示2〜15的整数， n表示0〜2的整数， p表示0〜4的整数。

30. 发明授权

US09368667B1 Plasmon field effect transistor 有权
标题翻译：等离子场效应晶体管
公开(公告)号：US09368667B1
公开(公告)日：2016-06-14
申请号：US14171342
申请日：2014-02-03
申请人： Sung Jin Kim , Juhyung Yun
发明人： Sung Jin Kim , Juhyung Yun
IPC分类号： H01L31/062 , H01L31/113 , H01L31/0352
CPC分类号： H01L31/1136 , H01L31/02327
摘要： A field effect transistor (FET) is provided. The FET includes a first material layer, second material layer and a third material layer. The third material layer includes an n-type silicon substrate layer and a gate electrode. The gate electrode includes an insulating substrate with at least one conducting metal. The second material layer is disposed on the third material layer. The first material layer is disposed on the second material layer. A source electrode is disposed on the first material layer. A drain electrode is disposed on the first material layer. A plurality of gold nanostructures are disposed on an active channel of the FET. The plurality of gold nanostructures are electrically isolated from the source electrode, drain electrode and gate electrode. The plurality of gold nanostructures contribute to a drain current of the FET based at least in part on plasmonic absorption of photons.
摘要翻译：提供场效应晶体管（FET）。 FET包括第一材料层，第二材料层和第三材料层。第三材料层包括n型硅衬底层和栅电极。栅电极包括具有至少一个导电金属的绝缘衬底。第二材料层设置在第三材料层上。第一材料层设置在第二材料层上。源电极设置在第一材料层上。漏电极设置在第一材料层上。多个金纳米结构设置在FET的有源沟道上。多个金纳米结构与源电极，漏电极和栅电极电隔离。至少部分地基于光子的等离子体吸收，多个金纳米结构有助于FET的漏极电流。

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