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21. 发明授权

US07057330B2 Broad frequency band energy scavenger 失效
标题翻译：宽频带能量清除剂
公开(公告)号：US07057330B2
公开(公告)日：2006-06-06
申请号：US10739847
申请日：2003-12-18
申请人： Steven A. Buhler , John S. Fitch , Eric J. Shrader
发明人： Steven A. Buhler , John S. Fitch , Eric J. Shrader
IPC分类号： H02N2/18
CPC分类号： H01L41/1136
摘要： In accordance with one aspect of the present exemplary embodiment, an energy generation device is provided. A base is fixedly secured to a source of mechanical energy of an oscillatory nature. At least one mass is movably suspended relative to the base. First and second members movably suspend the at least one mass relative to the base. The first and second flexible members convert mechanical energy from oscillations emitted by the source of mechanical energy into electrical signals.
摘要翻译：根据本示例性实施例的一个方面，提供了一种能量产生装置。基座固定地固定在振荡性能的机械能源上。至少一个质量块相对于基座可移动地悬挂。第一和第二构件相对于基座可移动地悬挂至少一个质量块。第一和第二柔性构件将来自机械能源发射的振荡的机械能转换成电信号。

22. 发明授权

US07517043B2 Fluidic structures 有权
标题翻译：流体结构
公开(公告)号：US07517043B2
公开(公告)日：2009-04-14
申请号：US11014356
申请日：2004-12-16
申请人： John S. Fitch , Scott Elrod , Jurgen Daniel , James W. Stasiak , Steven A. Buhler , Babur B. Hadimioglu , Joy Roy , Michael C. Weisberg , James C. Zesch
发明人： John S. Fitch , Scott Elrod , Jurgen Daniel , James W. Stasiak , Steven A. Buhler , Babur B. Hadimioglu , Joy Roy , Michael C. Weisberg , James C. Zesch
IPC分类号： B41J2/015
CPC分类号： B01L3/0268 , B01L2200/12 , B01L2300/0819 , B01L2400/0433 , B01L2400/0605 , B01L2400/084
摘要： Various fluidic techniques can employ ducting structures, such as microstructures, that extend between other components, such as plate-like structures. A ducting structure can, for example, include an inlet opening toward or near one plate-like structure, an outlet opening toward or near another plate-like structure, and a duct in which fluid flows after being received through the inlet opening and before being provided through the outlet opening. In some implementations, a ducting structure is photo-defined, such as by exposing a photoimageable structure and then removing either exposed or unexposed regions. In some implementations, a ducting structure is a freestanding polymer microstructure. In some implementations, ducting structures are microstructures that extend approximately the same length between first and second plate-like structures, and have a ratio of length to maximum cavity diameter of approximately two or more. A printhead implementation includes an array of such microstructures supported between drive side and drop side assemblies.
摘要翻译：各种流体技术可以采用在诸如板状结构的其他部件之间延伸的管道结构，例如微结构。管道结构可以例如包括朝向或靠近一个板状结构的入口开口，朝向或接近另一个板状结构的出口，以及在通过入口开口之后流体流动的管道通过出口开口提供。在一些实施方案中，管道结构是光限定的，例如通过曝光可光成像的结构，然后去除暴露或未曝光的区域。在一些实施方案中，管道结构是独立的聚合物微结构。在一些实施方案中，管道结构是在第一和第二板状结构之间延伸大致相同长度的微结构，并且具有大约两个或更多个长度与最大腔直径的比率。打印头实现包括支撑在驱动侧和液滴侧组件之间的这种微结构的阵列。

23. 发明授权

US07905580B2 Multi-layer monolithic fluid ejectors using piezoelectric actuation 有权
标题翻译：使用压电驱动的多层单片液体喷射器
公开(公告)号：US07905580B2
公开(公告)日：2011-03-15
申请号：US12273575
申请日：2008-11-19
申请人： Baomin Xu , Steven A. Buhler , Stephen D. White , Scott Jong Ho Limb
发明人： Baomin Xu , Steven A. Buhler , Stephen D. White , Scott Jong Ho Limb
IPC分类号： B41J2/045
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1634 , B41J2/1639 , B41J2/1642 , B41J2/1643 , B41J2/1646 , B41J2002/14475 , Y10T29/42 , Y10T29/49401
摘要： A fluid ejector including a silicon wafer having a first side and a second side. A multi-layer monolithic structure is formed on the first side of the silicon wafer. The multi-layer monolithic structure includes a first structure layer formed on the first side of the silicon wafer, and the first structure layer has an aperture. A second structure layer has a horizontal portion and closed, filled trenches or vertical sidewalls. The first structure layer, horizontal portion and the closed, filled trenches or vertical sidewalls of the second structure layer define a fluid cavity. An actuator is associated with the horizontal portion of the second structure layer, and an etched portion of the silicon wafer defines an open area which exposes the aperture in the first structure layer.
摘要翻译：一种流体喷射器，包括具有第一侧和第二侧的硅晶片。在硅晶片的第一侧上形成多层整体结构。多层单片结构包括形成在硅晶片的第一侧上的第一结构层，第一结构层具有孔。第二结构层具有水平部分和闭合的填充沟槽或垂直侧壁。第二结构层的第一结构层，水平部分和闭合填充的沟槽或垂直侧壁限定流体腔。致动器与第二结构层的水平部分相关联，并且硅晶片的蚀刻部分限定露出第一结构层中的孔的开放区域。

24. 发明授权

US07401403B2 Method for forming ceramic thick film element arrays with fine feature size, high-precision definition, and/or high aspect ratios 有权
标题翻译：用于形成具有精细特征尺寸，高精度定义和/或高纵横比的陶瓷厚膜元件阵列的方法
公开(公告)号：US07401403B2
公开(公告)日：2008-07-22
申请号：US11017569
申请日：2004-12-20
申请人： Baomin Xu , Stephen D. White , Steven A. Buhler
发明人： Baomin Xu , Stephen D. White , Steven A. Buhler
IPC分类号： H05K3/02 , B28B3/06
CPC分类号： H01L27/20 , H01L41/1876 , H01L41/313 , H01L41/331 , Y10T29/42 , Y10T29/435 , Y10T29/49155 , Y10T29/49163
摘要： A method is provided that includes providing a mold on a temporary substrate, e.g., a sapphire substrate. Next, a material such as PZT paste is deposited into the mold. Then, the mold is removed to obtain elements formed by the mold. The formed elements will then be sintered. After sintering, electrode deposition is optionally performed. The sintered elements are then bonded to a final target substrate and released from the temporary substrate through laser liftoff. Further, electrodes may also be optionally deposited at this point.
摘要翻译：提供了一种方法，其包括在临时衬底（例如，蓝宝石衬底）上提供模具。接下来，将诸如PZT糊料的材料沉积到模具中。然后，去除模具以获得由模具形成的元件。然后将所形成的元件烧结。烧结后，任选地进行电极沉积。然后将烧结元件结合到最终目标衬底，并通过激光剥离从临时衬底释放。此外，电极也可以任选地沉积在这一点上。

25. 发明授权

US07193643B2 Scan non-linearity correction using frequency modulation and synchronization with a master clock 有权
标题翻译：使用频率调制和主时钟同步扫描非线性校正
公开(公告)号：US07193643B2
公开(公告)日：2007-03-20
申请号：US10284543
申请日：2002-10-30
申请人： Mehrdad Zomorrodi , Steven A. Buhler
发明人： Mehrdad Zomorrodi , Steven A. Buhler
IPC分类号： B41J2/435
CPC分类号： H04N1/053 , H04N1/1135 , H04N1/12 , H04N2201/02439 , H04N2201/04772 , H04N2201/04793 , H04N2201/04794
摘要： An electronic circuit is utilized to correct scan non-linearity of a raster output scanner. The circuit modulates a clock frequency to match a scan linearity error profile. Because it is a separate circuit, the exiting closed-loop clock generator does not need to be modified. The correction circuit synchronizes itself with the clock signal using a counter/subtractor phase detector, which ensures that the phase and frequency of the internal clock matches the phase and frequency of the master.
摘要翻译：使用电子电路来校正光栅输出扫描器的扫描非线性。电路调制时钟频率以匹配扫描线性误差轮廓。因为它是一个单独的电路，所以不需要修改出来的闭环时钟发生器。校正电路使用计数器/减法器相位检测器与时钟信号同步，确保内部时钟的相位和频率与主器件的相位和频率匹配。

26. 发明授权

US06650151B2 Process insensitive electronic driver circuitry for integrated RF switching diodes 失效
标题翻译：用于集成射频开关二极管的过程不敏感的电子驱动器电路
公开(公告)号：US06650151B2
公开(公告)日：2003-11-18
申请号：US10025476
申请日：2001-12-26
申请人： Mostafa R. Yazdy , Lamar T. Baker , Steven A. Buhler
发明人： Mostafa R. Yazdy , Lamar T. Baker , Steven A. Buhler
IPC分类号： H03B100
CPC分类号： H01L29/8611 , B41J2/14008 , H01L29/0692
摘要： An electronic driver circuitry for an RF switch diode used in Acoustic Ink Jet Printing (AIP) systems is disclosed The electronic driver circuitry consists of a PMOS transistor and a poly resistor used to control the on/off states of the RF switch diode wherein the drive current for the RF switch diode is the same as the current in the PMOS transistor. To compensate for undesirable variations in the RF switch diode, the driver circuitry is designed such that the current in the PMOS transistor is adjusted in an opposite direction to cancel the unwanted variations.
摘要翻译：公开了一种用于声喷墨打印（AIP）系统中用于RF开关二极管的电子驱动器电路。电子驱动器电路由用于控制RF开关二极管的导通/截止状态的PMOS晶体管和多晶硅电阻组成，其中驱动 RF开关二极管的电流与PMOS晶体管中的电流相同。为了补偿RF开关二极管中的不期望的变化，驱动器电路被设计成使得PMOS晶体管中的电流在相反方向上被调整以消除不期望的变化。

27. 发明授权

US06447086B1 Method and apparatus for achieving controlled RF switching ratios to maintain thermal uniformity in the acoustic focal spot of an acoustic ink printhead 有权
标题翻译：用于实现受控的RF切换比以保持声学墨水打印头的声学焦点中的热均匀性的方法和装置
公开(公告)号：US06447086B1
公开(公告)日：2002-09-10
申请号：US09449038
申请日：1999-11-24
申请人： Lamar T. Baker , Steven A. Buhler , Scott Elrod , William F. Gunning , Babur B. Hadimioglu , Abdul M. El Hatem , Joy Roy , Richard Stearns
发明人： Lamar T. Baker , Steven A. Buhler , Scott Elrod , William F. Gunning , Babur B. Hadimioglu , Abdul M. El Hatem , Joy Roy , Richard Stearns
IPC分类号： B41J2938
CPC分类号： B41J2/14008
摘要： A number of architectures of switch compensation networks are described for the provision of a compensation current which ensures the maintaining of a desired switching ratio in an acoustic printhead. The described architectures include those which provide column compensation, row compensation, and row and column compensation to a transducer switching matrix. Control of the switching ratio by the compensation networks, is used in consideration of the dissipation of heat energy through expulsion of a heated drop, to provide a precisely controlled balance.
摘要翻译：描述了开关补偿网络的许多架构，用于提供补偿电流，其确保在声学打印头中保持期望的开关比。所描述的架构包括向传感器开关矩阵提供列补偿，行补偿以及行和列补偿的结构。通过补偿网络控制切换比，考虑到通过排出加热液滴的热能耗散，以提供精确控制的平衡。

28. 发明授权

US5229308A Bipolar transistors with high voltage MOS transistors in a single substrate 失效
标题翻译：在单个衬底中具有高压MOS晶体管的双极晶体管
公开(公告)号：US5229308A
公开(公告)日：1993-07-20
申请号：US878141
申请日：1992-05-04
申请人： Tuan A. Vo , Mohamad M. Mojaradi , Steven A. Buhler
发明人： Tuan A. Vo , Mohamad M. Mojaradi , Steven A. Buhler
IPC分类号： H01L21/8249
CPC分类号： H01L21/8249 , Y10S148/009
摘要： A method of manufacturing a semiconductor device having a bipolar transistor for ordinary logic operation, as well as a high voltage MOS transistor which are provided in a single semiconductor substrate. The process includes the steps of making high voltage MOS transistors which comprises the steps of n-well fabrication, first drift region fabrication, second drift region fabrication, source and drain contact region fabrication and making bipolar transistors within the same silicon substrate as the high voltage MOS transistors which includes the step of base region fabrication where the steps for fabricating the second drift region of the high voltage MOS transistor and the base region of the bipolar transistor are combined so that both regions are created simultaneously.
摘要翻译：一种用于普通逻辑运算的半导体器件的制造方法以及设置在单个半导体衬底中的高压MOS晶体管。该方法包括制造高电压MOS晶体管的步骤，其包括以下步骤：n阱制造，第一漂移区制造，第二漂移区制造，源极和漏极接触区域制造以及在与高电压相同的硅衬底内制造双极晶体管 MOS晶体管包括基极区制造步骤，其中组合用于制造高压MOS晶体管的第二漂移区和双极晶体管的基极区的步骤，使得两个区域同时产生。

29. 发明授权

US4899180A On chip heater element and temperature sensor 失效
标题翻译：片上加热元件和温度传感器
公开(公告)号：US4899180A
公开(公告)日：1990-02-06
申请号：US187779
申请日：1988-04-29
申请人： Abdul M. Elhatem , Steven A. Buhler
发明人： Abdul M. Elhatem , Steven A. Buhler
IPC分类号： B41J2/05
CPC分类号： B41J2/04541 , B41J2/04563 , B41J2/0458 , B41J2002/14379
摘要： This bubblejet device has integrated into it a number of heater resistors and a temperature sensor which operate in conjunction with a temperature regulating circuit to heat the chip to its optimum operating temperature within seconds of turn-on, and thereafter maintain that temperature regardless of local temperature variations. The precise temperature regulation of the array improves print quality.
摘要翻译：该气泡喷射装置已经集成了许多加热电阻器和温度传感器，其与温度调节电路一起工作，以在接通的几秒钟内将芯片加热至其最佳工作温度，然后保持该温度，而不管本地温度如何变化。阵列精确的温度调节可提高打印质量。

30. 发明授权

US08359748B2 Method of forming micromachined fluid ejectors using piezoelectric actuation 有权
标题翻译：使用压电驱动形成微机械流体喷射器的方法
公开(公告)号：US08359748B2
公开(公告)日：2013-01-29
申请号：US12273573
申请日：2008-11-19
申请人： Baomin Xu , Steven A. Buhler , Stephen D. White , Scott Jong Ho Limb
发明人： Baomin Xu , Steven A. Buhler , Stephen D. White , Scott Jong Ho Limb
IPC分类号： B21D53/76 , H04R17/00
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1634 , B41J2/1639 , B41J2/1642 , B41J2/1643 , B41J2/1646 , B41J2002/14475 , Y10T29/42 , Y10T29/49401
摘要： A method of forming a fluid ejector includes forming a recess well into a silicon wafer on a first side of the silicon wafer, and filling the recess well with a sacrificial material. A thin layer structure is deposited onto the first side of a silicon wafer covering the filled recess well. Then a thin film piezoelectric is bonded or deposited to the thin layer structure, and a hole is formed in the thin layer structure exposing at least a portion of the sacrificial material. The sacrificial material is removed from the recess well, wherein the hole in the thin layer in the recess well with the sacrificial material removed, form a fluid inlet. An opening area in the silicon wafer is formed on a second side of the silicon wafer. Then a nozzle plate is formed having a recess portion and an aperture within the recess portion. The nozzle plate is attached to the second side of the silicon wafer, with the recess portion positioned within the open area. The thin layer structure and the recess portion of the nozzle plate define a depth of a fluid cavity defined by the thin layer structure, the recess portion of the nozzle plate and the sidewalls of the silicon wafer.
摘要翻译：形成流体喷射器的方法包括在硅晶片的第一侧上将凹槽形成凹槽，并用牺牲材料填充凹槽。在覆盖填充的凹槽的硅晶片的第一侧上沉积薄层结构。然后，薄膜压电体被结合或沉积到薄层结构上，并且在该薄层结构中形成一个露出至少一部分牺牲材料的孔。牺牲材料从凹槽中移除，其中凹槽中的薄层中的孔与除去牺牲材料的孔形成流体入口。硅晶片的开口区域形成在硅晶片的第二侧上。然后形成在凹部内具有凹部和孔的喷嘴板。喷嘴板附接到硅晶片的第二侧，凹部位于开放区域内。喷嘴板的薄层结构和凹部限定由薄层结构，喷嘴板的凹部和硅晶片的侧壁限定的流体腔的深度。

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