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    • 21. 发明申请
    • Illumination apparatus and methods
    • 照明装置和方法
    • US20050141810A1
    • 2005-06-30
    • US11015852
    • 2004-12-15
    • Mehdi Vaez-IravaniGuoheng ZhaoStanley Stokowski
    • Mehdi Vaez-IravaniGuoheng ZhaoStanley Stokowski
    • G02B6/00G02B6/04G02B6/32G02B27/48
    • G02B27/48G02B6/0001G02B6/04
    • Disclosed are apparatus and methods for illuminating a sample, e.g., during an inspection of such sample for defects. In one aspect, the illumination apparatus includes a bundle of fibers that each have a first end and a second end. The illumination apparatus further includes an illumination selector for selectively transmitting one or more incident beams into one or more corresponding first ends of the optical fibers so that the selected one or more incident beams are output from one or more corresponding second ends of the fibers. The illumination apparatus also includes a lens arrangement for receiving the selected one or more incidents beams output from the corresponding one or more second ends of the fibers and directing the selected one or more incident beams towards the sample. The lens arrangement and the fibers are arranged with respect to each other so as to image an imaging plane of the sample at the second ends of the fibers. In one aspect, the incident beams are laser beams. In a specific application of the invention, the sample is selected from a group consisting of a semiconductor device, a semiconductor wafer, and a semiconductor reticle.
    • 公开了用于照亮样品的装置和方法,例如在检查这种样品的缺陷时。 一方面,照明装置包括一束纤维,每束纤维具有第一端和第二端。 照明装置还包括照明选择器,用于选择性地将一个或多个入射光束传输到光纤的一个或多个相应的第一端中,使得所选择的一个或多个入射光束从光纤的一个或多个对应的第二端输出。 照明设备还包括透镜装置,用于接收从光纤的对应的一个或多个第二端输出的所选择的一个或多个事件光束,并将所选择的一个或多个入射光束引向样品。 透镜布置和光纤相对于彼此布置,以便在纤维的第二端成像样品的成像平面。 一方面,入射光束是激光束。 在本发明的具体应用中,样品选自半导体器件,半导体晶片和半导体掩模版。
    • 23. 发明申请
    • Method and apparatus for detecting surface characteristics on a mask blank
    • 用于检测掩模板上的表面特性的方法和装置
    • US20050254065A1
    • 2005-11-17
    • US11127436
    • 2005-05-11
    • Stanley Stokowski
    • Stanley Stokowski
    • G01B11/24G01N21/956G03F1/00
    • G01N21/95684G01N2021/8825G01N2021/95676G03F1/50G03F1/84
    • An optical system and method configured to detect surface height variations on a mask blank. The optical system comprises a Wollaston prism, optics and first and second detectors. The Wollaston prism splits an incident beam of radiation into a first beam and a second beam. The first beam has a first polarization. The second beam has a second polarization. The optics directs the first and second beams along first and second paths onto first and second illuminated areas on a surface of the mask blank. The first and second illuminated areas reflect or transmit portions of the first and second beams to produce first and second reflected or transmitted beams. The first and second detectors detect the first and second reflected or transmitted beams and produce first and second signals in response to the first and second reflected or transmitted beams. A multiple way coupler may also be used for detecting height variation or other features on a mask blank. Two substantially parallel optical incident radiation beams are transmitted to the mask blank. The multiple way coupler mixes portions of the two beams after they have been reflected or transmitted by two different areas of said mask blank to provide three or more outputs which can be analyzed to provide information on height variation or other features on the mask blank.
    • 一种被配置为检测掩模板上的表面高度变化的光学系统和方法。 光学系统包括Wollaston棱镜,光学器件和第一和第二检测器。 Wollaston棱镜将入射的辐射束分裂成第一光束和第二光束。 第一光束具有第一偏振。 第二光束具有第二偏振。 光学器件将第一和第二光束沿着第一和第二路径引导到掩模毛坯的表面上的第一和第二被照射区域上。 第一和第二照明区域反射或透射第一和第二光束的部分以产生第一和第二反射或透射光束。 第一和第二检测器检测第一和第二反射或发射波束,并响应于第一和第二反射或透射波束产生第一和第二信号。 多路耦合器也可用于检测掩模板上的高度变化或其它特征。 两个基本上平行的光入射辐射束被传送到掩模板。 多路耦合器在两个光束的两个不同区域被反射或透射之后混合两个光束的部分,以提供三个或更多个输出,其可被分析以提供关于掩模板上的高度变化或其它特征的信息。
    • 24. 发明申请
    • Sample inspection system
    • 样品检验系统
    • US20050134841A1
    • 2005-06-23
    • US11031813
    • 2005-01-07
    • Mehdi Vacz-IravaniStanley StokowskiGuoheng Zhao
    • Mehdi Vacz-IravaniStanley StokowskiGuoheng Zhao
    • G01N21/21G01N21/47G01N21/95G01N21/88
    • G01N21/956G01N21/21G01N21/47G01N21/9501G01N2021/8825G01N2021/8845G01N2021/8848
    • A curved mirrored surface is used to collect radiation scattered by a sample surface and originating from a normal illumination beam and an oblique illumination beam. The collected radiation is focused to a detector. Scattered radiation originating from the normal and oblique illumination beams may be distinguished by employing radiation at two different wavelengths, by intentionally introducing an offset between the spots illuminated by the two beams or by switching the normal and oblique illumination beams on and off alternately. Beam position error caused by change in sample height may be corrected by detecting specular reflection of an oblique illumination beam and changing the direction of illumination in response thereto. Butterfly-shaped spatial filters may be used in conjunction with curved mirror radiation collectors to restrict detection to certain azimuthal angles.
    • 弯曲的镜面用于收集样品表面散射的辐射,并起源于正常照明光束和倾斜照明光束。 收集的辐射被聚焦到检测器。 可以通过使用两个不同波长的辐射,通过有意地在由两个光束照射的光斑之间引入偏移,或者通过交替地切换正常和倾斜照明光束来区分源自正常和倾斜照明光束的散射辐射。 可以通过检测倾斜照明光束的镜面反射并响应于其而改变照明方向来校正由样本高度的变化引起的光束位置误差。 蝶形空间滤波器可以与曲面镜辐射收集器一起使用,以将检测限制在某些方位角。
    • 25. 发明申请
    • Method for determining and correcting reticle variations
    • 确定和校正标线差异的方法
    • US20060234145A1
    • 2006-10-19
    • US11394177
    • 2006-03-29
    • Sterling WatsonAdy LevyChris MackStanley StokowskiZain Saidin
    • Sterling WatsonAdy LevyChris MackStanley StokowskiZain Saidin
    • G03F1/00G03C5/00G06K9/00
    • G03F1/84Y10S430/146
    • Disclosed are techniques for determining and correcting reticle variations using a reticle global variation map generated by comparing a set of measured reticle parameters to a set of reference reticle parameters. The measured reticle parameters are obtained by reticle inspection, and the variation map identifies reticle regions and associated levels of correction. In one embodiment, the variation data is communicated to a system which modifies the reticle by embedding scattering centers within the reticle at identified reticle regions, thereby improving the variations. In another embodiment the variation data is transferred to a wafer stepper or scanner which in turn modifies the conditions under which the reticle is used to manufacture wafers, thereby compensating for the variations and producing wafers that are according to design.
    • 公开了用于使用通过将测量的标线参数的集合与一组参考掩模版参数进行比较而生成的光罩全局变化图来确定和校正光罩变化的技术。 通过掩模版检查获得测量的掩模版参数,并且变化图识别标线区域和相关联的校正水平。 在一个实施例中,将变化数据传送到通过在标定的标线区域内的散射中心嵌入来修改掩模版的系统,从而改善变化。 在另一个实施例中,变化数据被传送到晶片步进器或扫描器,该晶片步进器或扫描器又改变了使用掩模版制造晶片的条件,从而补偿了根据设计的变化和生产晶片。
    • 26. 发明授权
    • Particle detection on a patterned or bare wafer surface
    • 在图案或裸晶圆表面上进行粒子检测
    • US5076692A
    • 1991-12-31
    • US531132
    • 1990-05-31
    • Armand P. NeukermansPeter C. JannRalph WolfDavid WolzeStanley Stokowski
    • Armand P. NeukermansPeter C. JannRalph WolfDavid WolzeStanley Stokowski
    • H01L21/66G01N21/94H01L21/027
    • G01N21/94G01N21/4788
    • A method and apparatus for predicting the number of contaminant particles in circuit area of a patterned semiconductor wafer having a number of reflective circuit areas. The method includes forming on a wafer in specified areas, a grating test pattern, such as a line grating. The grating patterns are formed at the same time and in the same manner that repetitive circuit patterns are formed on the wafer. The wafer is then scanned by a light beam. Since the diffraction pattern caused by the grating test patterns is known, it is possible to detect when the light beam is scanning one of the known grating patterns. The diffraction pattern may be inspected for fabrication derived variations. In response to detecting a known grating pattern, a detection mechanism is activated. Since the diffraction pattern is known it may be spatially separated. In this way only light scattered by particles or defects in the pattern are collected and detected. From the scattered light that is collected and detected, a particle count may be determined for the grating pattern area. From this particle count an accurate prediction of the number of particles in the circuit patterns may be made. The apparatus may also inspect bare areas. In this manner real time inspection may be performed on patterned wafers.
    • 一种用于预测具有多个反射电路区域的图案化半导体晶片的电路区域中的污染物颗粒数量的方法和装置。 该方法包括在特定区域的晶片上形成光栅测试图案,例如线光栅。 光栅图案是以与在晶片上形成重复电路图案相同的方式形成的。 然后通过光束扫描晶片。 由于由光栅测试图案引起的衍射图案是已知的,因此可以检测光束何时扫描已知光栅图案之一。 可以检查衍射图案以进行制造衍生的变化。 响应于检测到已知的光栅图案,检测机构被激活。 由于衍射图案是已知的,它可以在空间上分离。 以这种方式,仅收集并检测由图案中的颗粒或缺陷散射的光。 从收集和检测的散射光中,可以确定光栅图案区域的粒子数。 从该粒子计数可以进行电路图案中的粒子数量的准确预测。 该设备还可以检查裸露的区域。 以这种方式,可以对图案化的晶片进行实时检查。
    • 28. 发明申请
    • Systems and methods for mitigating variances on a patterned wafer using a prediction model
    • 使用预测模型减轻图案化晶片上的方差的系统和方法
    • US20060240336A1
    • 2006-10-26
    • US11394900
    • 2006-03-31
    • Sterling WatsonAdy LevyChris MackStanley StokowskiZain Saidin
    • Sterling WatsonAdy LevyChris MackStanley StokowskiZain Saidin
    • G06F17/50G03F1/00
    • G03F1/84G03F1/36Y10S430/146
    • Disclosed are systems and methods for mitigating variances (e.g., critical dimension variances) on a patterned wafer are provided. In general, variances of a patterned wafer are predicted using one or more reticle fabrication and/or wafer processing models. The predicted variances are used to modify selected transparent portions of the reticle that is to be used to produce the patterned wafer. In a specific implementation, an optical beam, such as a femto-second laser, is applied to the reticle at a plurality of embedded positions, and the optical beam is configured to form specific volumes of altered optical properties within the transparent material of the reticle at the specified positions. These reticle volumes that are created at specific positions of the reticle result in varying amounts of light transmission or dose through the reticle at such specific positions so as to mitigate the identified variances on a wafer that is patterned using the modified reticle.
    • 公开了用于减轻图案化晶片上的方差(例如,临界尺寸方差)的系统和方法。 通常,使用一个或多个掩模版制造和/或晶片处理模型预测图案化晶片的变化。 预测的方差用于修改用于产生图案化晶片的掩模版的所选透明部分。 在具体实现中,诸如毫微微秒激光器的光束在多个嵌入位置被施加到掩模版,并且光束被配置为在掩模版的透明材料内形成改变的光学特性的特定体积 在指定位置。 在掩模版的特定位置处产生的这些掩模版体积在这样的特定位置处导致通过掩模版的光透射或剂量的变化量,以便减轻使用修改的掩模版图案化的晶片上识别的方差。