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21. 发明授权

US07939879B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07939879B2
公开(公告)日：2011-05-10
申请号：US11896800
申请日：2007-09-06
申请人： Taro Osabe , Tomoyuki Ishii , Kazuo Yano , Takashi Kobayashi
发明人： Taro Osabe , Tomoyuki Ishii , Kazuo Yano , Takashi Kobayashi
IPC分类号： H01L29/792
CPC分类号： H01L27/11521 , B82Y10/00 , G11C16/0433 , G11C16/0458 , G11C16/0483 , G11C16/0491 , G11C16/10 , G11C16/26 , G11C2216/06 , H01L27/115 , H01L29/42332 , H01L29/42348 , H01L29/7887
摘要： For providing a cheap semiconductor memory device with improving reliability by level of a cell, in the place of escaping from defects on memory cells electrically, through such as ECC, and further for providing a cell structure enabling scaling-down in the vertical direction with maintaining the reliability, in a semiconductor memory device, upon which high-speeded read-out operation is required, a charge storage region is constructed with particles made from a large number of semiconductor charge storage small regions, each being independent, thereby increasing the reliability by the cell level.
摘要翻译：为了通过电池级提供具有提高可靠性的便宜的半导体存储器件，以代替通过诸如ECC的电存储器单元中的缺陷脱离，并且还用于提供能够在垂直方向上按比例缩小的单元结构，同时保持在需要高速读出操作的半导体存储器件中的可靠性，电荷存储区域由大量半导体电荷存储小区域制成的粒子构成，各自独立，从而通过细胞水平。

22. 发明授权

US07910495B2 Plasma oxidizing method, plasma processing apparatus, and storage medium 失效
标题翻译：等离子体氧化法，等离子体处理装置和储存介质
公开(公告)号：US07910495B2
公开(公告)日：2011-03-22
申请号：US12443589
申请日：2007-09-27
申请人： Toshihiko Shiozawa , Yoshiro Kabe , Takashi Kobayashi , Hikaru Adachi , Junichi Kitagawa , Nobuhiko Yamamoto
发明人： Toshihiko Shiozawa , Yoshiro Kabe , Takashi Kobayashi , Hikaru Adachi , Junichi Kitagawa , Nobuhiko Yamamoto
IPC分类号： H01L21/469
CPC分类号： H01L21/76229 , H01L21/02238 , H01L21/02252 , H01L21/31662 , H01L21/7621
摘要： A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxygen in the processing vessel, a step of supplying high-frequency electric power to the susceptor and applying a high-frequency bias to the object to be processed when the plasma is produced, and a step of forming a silicon oxide film by oxidizing silicon in the surface of the object to be processed by the plasma.
摘要翻译：等离子体氧化方法包括将待处理物体放置在等离子体处理装置的处理容器中的基座上的步骤，在处理容器内从含有氧的处理气体生成等离子体的步骤向基座提供高频电力的步骤，在制造等离子体时向待处理物体施加高频偏压的步骤，以及通过在物体的表面氧化硅来形成氧化硅膜的步骤由等离子体处理。

23. 发明授权

US07879287B2 Hot-rolled steel sheet for high-strength electric-resistance welded pipe having sour-gas resistance and excellent weld toughness, and method for manufacturing the same 有权
标题翻译：具有耐酸气性和优异的焊接韧性的高强度电阻焊管热轧钢板及其制造方法
公开(公告)号：US07879287B2
公开(公告)日：2011-02-01
申请号：US11049836
申请日：2005-02-03
申请人： Takashi Kobayashi , Hiroshi Nakata , Chikara Kami , Toru Inazumi , Shuji Kawamura
发明人： Takashi Kobayashi , Hiroshi Nakata , Chikara Kami , Toru Inazumi , Shuji Kawamura
IPC分类号： C22C38/60 , C22C38/14 , C22C38/12 , C22C38/00 , C21D9/08 , C21D9/52 , C21D8/02
CPC分类号： C21D8/0226 , C22C38/02 , C22C38/04 , C22C38/08 , C22C38/12 , C22C38/16
摘要： A hot-rolled steel sheet for high-strength ERW pipes contains about 0.02% to about 0.06% C; about 0.05% to about 0.50% Si; about 0.5% to about 1.5% Mn; about 0.010% or less P; about 0.0010% or less S; about 0.01% to about 0.10% Al; about 0.01% to about 0.10% Nb; about 0.001% to about 0.025% Ti; about 0.001% to about 0.005% Ca; about 0.003% or less 0; and about 0.005% or less N, and at least one element selected from the group consisting of about 0.01% to about 0.10% V; about 0.01% to about 0.50% Cu; about 0.01% to about 0.50% Ni; and about 0.01% to about 0.50% Mo on the basis of mass. The group of C, Si, Mn, Cu, Ni, Mo, and V and the group of Ca, 0, and S satisfy specific relationships, and the microstructure of the steel sheet is composed of about 95% by volume or more bainitic ferrite.
摘要翻译：用于高强度ERW管的热轧钢板含有约0.02％至约0.06％的C; 约0.05％至约0.50％的Si; 约0.5％至约1.5％的Mn; 约0.010％以下P; 约0.0010％以下S; 约0.01％至约0.10％的Al; 约0.01％至约0.10％的Nb; 约0.001％至约0.025％的Ti; 约0.001％至约0.005％的Ca; 约0.003％以下0; 和约0.005％以下的N，以及选自约0.01％至约0.10％V的至少一种元素; 约0.01％至约0.50％的Cu; 约0.01％至约0.50％的Ni; 和基于质量的约0.01％至约0.50％的Mo。 C，Si，Mn，Cu，Ni，Mo和V组以及Ca，O和S组的组合满足特定关系，钢板的微结构由约95体积％以上的贝氏体铁素体。

24. 发明授权

US07871705B2 Carbon fiber composite transfer member with reflective surfaces 有权
标题翻译：具有反光面的碳纤维复合转印件
公开(公告)号：US07871705B2
公开(公告)日：2011-01-18
申请号：US12259816
申请日：2008-10-28
申请人： Chris L. Miller , Daisuke Uchida , Takashi Kobayashi , Kenichi Aoyagi , Shinichi Takemura
发明人： Chris L. Miller , Daisuke Uchida , Takashi Kobayashi , Kenichi Aoyagi , Shinichi Takemura
IPC分类号： B32B15/092
CPC分类号： B32B15/092 , B25J9/0012 , B25J19/0075 , B32B9/007 , B32B9/041 , B32B15/08 , B32B15/18 , B32B15/20 , B32B27/38 , B32B2262/101 , B32B2262/106 , B32B2307/21 , B32B2307/416 , B32B2307/56 , B32B2311/04 , B32B2311/08 , B32B2311/12 , B32B2311/16 , B32B2311/18 , B32B2311/22 , B32B2311/24 , B32B2311/30 , B32B2457/20 , H01L21/67103 , H01L21/67739 , H01L21/67742 , Y10T74/20305 , Y10T428/31529 , Y10T428/31678
摘要： A method of transporting precision equipment materials without absorption of thermal energy through the heat sensitive material or device such as flat panel displays. The transfer member has a carbon fiber reinforced composite material body with a layer of metal film on the top and bottom surfaces of the transfer member that provides a reflective surface. Flat panel displays, for example, release radiant thermal energy that is absorbed by the carbon fiber reinforced composite which is detrimental to the flat panel display. The reflective surface created by the metal film prevents the energy absorption by the carbon fiber reinforced composite. A glass fiber and epoxy layer on the metal film surface protects the metal film.
摘要翻译：运输精密设备材料而不会通过热敏材料或设备如平板显示器吸收热能的方法。转印构件具有碳纤维增强复合材料体，在转印构件的顶表面和底表面上具有提供反射表面的金属膜层。例如，平板显示器释放被碳纤维增强复合材料吸收的辐射热能，这对平板显示器是不利的。由金属膜产生的反射面防止碳纤维增强复合材料的能量吸收。金属膜表面上的玻璃纤维和环氧树脂层保护金属膜。

25. 发明申请

US20100231088A1 WAFER, WAFER POLISHING APPARATUS, WAFER POLISHING METHOD, METHOD OF FABRICATING PIEZOELECTRIC VIBRATOR, PIEZOELECTRIC VIBRATOR, OSCILLATOR, ELECTRONIC APPARATUS AND RADIOWAVE TIMEPIECE 有权
标题翻译：滤波器，抛光抛光装置，波浪抛光方法，压电振动器，压电振动器，振荡器，电子装置和放射线计时器的制造方法
公开(公告)号：US20100231088A1
公开(公告)日：2010-09-16
申请号：US12361913
申请日：2009-01-29
申请人： Takashi Kobayashi
发明人： Takashi Kobayashi
IPC分类号： H01L41/00 , B24C3/32 , B24B1/00
CPC分类号： H03H3/02 , B24B37/08 , B24B47/10 , B24B57/02 , H03H3/04 , H03H9/21 , H03H2003/026
摘要： To provide a wafer preventing a breakage of a crack or a chip off from being brought about in a polishing step and a polishing apparatus and a polishing method of polishing the wafer, there is provided a wafer in a shape of a plate substantially in an angular rectangular shape used as a raw material of a piezoelectric vibrator. All of corner portions D1, D2, D3, D4 substantially in the angular shape are formed in shapes of curved faces by chamfering providing curvatures. The corner portions D1, D2, D3, D4 in the shapes of the curved faces at least include a first curved face portion and a second curved face portion chamfered by curvatures different from each other or the same curvature. A reference face of a crystal orientation of the raw material is specified by the first curved face portion or the second curved face portion.
摘要翻译：为了提供防止在抛光步骤中产生裂纹或切屑的破裂的晶片以及研磨装置和抛光晶片的抛光方法，提供了一种基本上呈角度的板状的晶片用作压电振动器的原料的矩形形状。基本上呈角度形状的所有拐角部分D1，D2，D3，D4都通过倒角提供曲率形成曲面的形状。曲面形状的角部D1，D2，D3，D4至少包括由彼此不同的曲率或相同曲率的曲率倒角的第一曲面部和第二曲面部。原料的晶体取向的参照面由第一弯曲面部或第二弯曲面部指定。

26. 发明申请

US20100093186A1 METHOD FOR FORMING SILICON OXIDE FILM, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM 失效
公开(公告)号：US20100093186A1
公开(公告)日：2010-04-15
申请号：US12443137
申请日：2007-09-28
申请人： Takashi Kobayashi , Toshihiko Shinozawa , Yoshiro Abe , Junichi Kitagawa
发明人： Takashi Kobayashi , Toshihiko Shinozawa , Yoshiro Abe , Junichi Kitagawa
IPC分类号： H01L21/316 , H01L21/3065
CPC分类号： H01L21/76232 , H01L21/0214 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/28211 , H01L21/28247 , H01L21/3143 , H01L21/31662 , H01L21/3185 , H01L29/4236 , H01L29/66795
摘要： The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed.

27. 发明申请

US20100093185A1 METHOD FOR FORMING SILICON OXIDE FILM, PLASMA PROCESSING APPARATUS AND STORAGE MEDIUM 失效
标题翻译：形成硅氧烷膜，等离子体加工设备和储存介质的方法
公开(公告)号：US20100093185A1
公开(公告)日：2010-04-15
申请号：US12443044
申请日：2007-09-28
申请人： Yoshiro Kabe , Takashi Kobayashi , Toshihiko Shiozawa , Junichi Kitagawa
发明人： Yoshiro Kabe , Takashi Kobayashi , Toshihiko Shiozawa , Junichi Kitagawa
IPC分类号： H01L21/316 , C23C16/513 , C23C16/52
CPC分类号： H01L21/76232 , H01L21/0214 , H01L21/0217 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02332 , H01L21/0234 , H01L21/28211 , H01L21/28247 , H01L21/31662 , H01L21/76224 , H01L29/4236 , H01L29/66795
摘要： The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous points of a plasma oxidation process performed under a lower-pressure and lower-oxygen-concentration condition. In this method, plasma of a processing gas is applied to a surface of the object having a concavo-convex pattern, in a processing chamber of a plasma processing apparatus, so as to oxidize silicon on the surface of the object, thereby forming the silicon oxide film. The plasma is generated under the condition that a ratio of oxygen in the processing gas is within a range of 0.1% to 10% and pressure is within a range of 0.133 Pa to 133.3 Pa. This plasma oxidation process is performed, with a plate, having a plurality of through-holes formed therein, being provided between a region for generating the plasma in the processing chamber and the object to be processed.
摘要翻译：本发明提供一种形成氧化硅膜的方法，其具有基本上均匀的膜厚度，并且不受等离子体氧化工艺的优点的保证，在受加工物体上设置的图案中的致密部位和散射部位的影响在低压和低氧浓度条件下进行。在该方法中，在等离子体处理装置的处理室中，将处理气体的等离子体施加到具有凹凸图案的物体的表面，以氧化物体表面上的硅，从而形成硅氧化膜。在处理气体中的氧的比例在0.1〜10％的范围内且压力在0.133Pa〜133.3Pa的范围内的条件下产生等离子体，用等离子体氧化法，具有形成在其中的多个通孔，设置在处理室中用于产生等离子体的区域和待处理物体之间。

28. 发明授权

US07692234B2 Non-volatile semiconductor memory and method of making same, and semiconductor device and method of making device 有权
标题翻译：非易失性半导体存储器及其制造方法，以及半导体器件及其制造方法
公开(公告)号：US07692234B2
公开(公告)日：2010-04-06
申请号：US11862928
申请日：2007-09-27
申请人： Tetsuo Adachi , Masataka Kato , Toshiaki Nishimoto , Nozomu Matsuzaki , Takashi Kobayashi , Yoshimi Sudou , Toshiyuki Mine
发明人： Tetsuo Adachi , Masataka Kato , Toshiaki Nishimoto , Nozomu Matsuzaki , Takashi Kobayashi , Yoshimi Sudou , Toshiyuki Mine
IPC分类号： H01L29/788
CPC分类号： H01L21/28273 , G11C11/5628 , G11C16/0466 , G11C16/10 , G11C16/3454 , H01L21/28061 , H01L27/105 , H01L27/115 , H01L27/11519 , H01L27/11526 , H01L27/11529 , H01L27/11536 , H01L27/11546 , H01L29/6659 , H01L29/66825 , H01L29/7833
摘要： A semiconductor device, which ensures device reliability especially in fine regions and enables great capacitance and high-speed operations, has memory cells including, in a first region of a main surface of a semiconductor substrate, a gate insulating film, a floating gate electrode, an interlayer insulating film, a control gate electrode, and source and drain regions of the second conduction type arranged in a matrix, with a shallow isolation structure for isolating the memory cells. When using a shallow structure buried with an insulating film for element isolation, the isolation withstand voltage in fine regions can be prevented from lowering and the variation in threshold level of selective transistors can be reduced. When the memory cells in a memory mat are divided by means of selective transistors, the disturb resistance of the memory cells can be improved.
摘要翻译：一种半导体器件，其特别是确保器件的可靠性，特别是在微细的区域中并且能够实现大的电容和高速操作，具有在半导体衬底的主表面的第一区域中包括栅绝缘膜，浮栅电极，层间绝缘膜，控制栅极电极以及以矩阵形式布置的第二导电类型的源极和漏极区域，具有用于隔离存储单元的浅隔离结构。当使用用绝缘膜掩埋的浅结构用于元件隔离时，可以防止微细区域中的隔离耐受电压降低，并且可以降低选择性晶体管的阈值电平的变化。当通过选择性晶体管分配存储器垫中的存储单元时，可以提高存储单元的干扰电阻。

29. 发明授权

US07681716B2 Work conveying apparatus, method for producing work and method for producing image forming apparatus 有权
标题翻译：工件输送装置，制作方法及图像形成装置的制造方法
公开(公告)号：US07681716B2
公开(公告)日：2010-03-23
申请号：US11366403
申请日：2006-03-03
申请人： Takashi Kobayashi
发明人： Takashi Kobayashi
IPC分类号： B23P19/00
CPC分类号： B61J3/08 , B23P19/001 , B65G25/10
摘要： A work conveying apparatus including at least one movable work conveying device to support a work, a drive device capable of reciprocating by a predetermined distance in a predetermined direction, and a latching portion formed on at least one of the working conveying device and the drive device and configured to latch the working conveying device with the drive device and move the work conveying device when the drive device is moved in one direction in the reciprocating direction.
摘要翻译：一种工件输送装置，包括至少一个用于支撑工件的可移动工件输送装置，能够沿预定方向往复运动预定距离的驱动装置和形成在所述工作输送装置和所述驱动装置中的至少一个上的闩锁部分并且构造成当所述驱动装置沿着往复方向沿一个方向移动时，使所述工作输送装置与所述驱动装置锁定并移动所述工件输送装置。

30. 发明申请

US20100068074A1 CONTROL VALVE FOR VARIABLE DISPLACEMENT COMPRESSOR 审中-公开
标题翻译：可变位移压缩机的控制阀
公开(公告)号：US20100068074A1
公开(公告)日：2010-03-18
申请号：US12516621
申请日：2007-11-29
申请人： Koichi Shimada , Takashi Kobayashi
发明人： Koichi Shimada , Takashi Kobayashi
IPC分类号： F04B49/22
CPC分类号： F04B27/1804 , F04B2027/1827 , F04B2027/1831 , F04B2027/1854
摘要： A control valve is configured such that as a position of a high pressure-side valve body positioned by a solenoid is closer to one side, a degree of opening for communication of a high pressure valve portion is more widened and a pressure on the side of a discharge flow path acting on the high pressure-side valve body is weakened. Further, the control valve is configured such that as a position of a low pressure-side valve body positioned by the solenoid is closer to the other side, a degree of opening for communication of a low pressure valve portion is more widened. When the high pressure-side valve body and the low pressure-side valve body are integrally positioned on the one side by the solenoid and the low pressure-side valve body is positioned on the other side by the solenoid, the high pressure-side valve body and the low pressure-side valve body are separated from each other.
摘要翻译：控制阀被构造成使得当由螺线管定位的高压侧阀体的位置更靠近一侧时，高压阀部分的连通的开度更加扩大，并且在侧面的压力作用在高压侧阀体上的排出流路变弱。此外，控制阀被构造成使得当由螺线管定位的低压侧阀体的位置更靠近另一侧时，低压阀部分的连通的开度更大。当高压侧阀体和低压侧阀体通过螺线管一体地定位在一侧时，低压侧阀体由螺线管位于另一侧时，高压侧阀主体和低压侧阀体彼此分离。

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