会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 21. 发明申请
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US20050014319A1
    • 2005-01-20
    • US10885636
    • 2004-07-08
    • Shunpei YamazakiKeitaro ImaiShinji MaekawaMakoto FurunoOsamu Nakamura
    • Shunpei YamazakiKeitaro ImaiShinji MaekawaMakoto FurunoOsamu Nakamura
    • H01L29/786H01L21/336H01L21/77H01L21/84H01L27/12H01L29/423H01L21/00H01L21/8234
    • H01L27/12H01L27/1292H01L29/42384H01L29/66765
    • An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming gate electrodes with a droplet discharge method on a substrate having an insulating surface; laminating gate insulating layers, semiconductor layers, and a semiconductor layer containing one-conductivity type impurity over the gate electrodes; forming first conductive layers serving as masks with a droplet discharge method in a position overlapping the gate electrodes, etching the semiconductor layer and the semiconductor layer containing one-conductivity type impurity with the first conductive layers, forming a second conductive layer serving as a source wiring or a drain wiring with a droplet discharge method over the first conductive layers; and etching the first conductive layers and the semiconductor layer containing one-conductivity type impurity, using the second conductive layers as masks.
    • 本发明的目的是提供一种通过提高材料的使用率来简化制造工艺的半导体器件的制造方法。 本发明的半导体器件的制造方法包括以下步骤:在具有绝缘表面的基板上形成具有液滴喷射法的栅电极; 在栅电极上层叠栅绝缘层,半导体层和含有一导电型杂质的半导体层; 在与栅电极重叠的位置处形成用作液滴喷射法的掩模的第一导电层,用第一导电层蚀刻半导体层和含有一导电型杂质的半导体层,形成用作源极布线的第二导电层 或在第一导电层上具有液滴喷射方法的漏极布线; 并且使用第二导电层作为掩模来蚀刻第一导电层和含有一种导电型杂质的半导体层。