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21. 发明授权

US07977150B2 Method for manufacturing an organic semiconductor element 有权
标题翻译：有机半导体元件的制造方法
公开(公告)号：US07977150B2
公开(公告)日：2011-07-12
申请号：US12683193
申请日：2010-01-06
申请人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
发明人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
IPC分类号： H01L51/40
CPC分类号： H01L51/0545 , B82Y30/00 , G02F1/1368 , G02F2202/025 , H01L51/0002 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0051 , H01L51/0053
摘要： In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere.
摘要翻译：在制造使用有机TFT的器件时，必须开发通道长度短或沟道宽度窄的元件，以减小器件的尺寸。基于上述，本发明的目的是提供一种改进了特性的有机TFT。鉴于上述问题，本发明的一个特征是在沉积有机半导体膜之后烘烤元件。更具体地，本发明的一个特征是有机半导体膜在大气压或减压下加热。此外，烘烤过程可以在惰性气体气氛中进行。

22. 发明授权

US07727846B2 Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device 失效
标题翻译：制造SOI衬底的方法和制造半导体器件的方法
公开(公告)号：US07727846B2
公开(公告)日：2010-06-01
申请号：US12213137
申请日：2008-06-16
申请人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Iikubo , Kenichiro Makino , Sho Nagamatsu
发明人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Iikubo , Kenichiro Makino , Sho Nagamatsu
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/78654
摘要： It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and further, to manufacture a semiconductor device with high reliability by using such an SOI substrate. A semiconductor layer which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves, and the surface of the semiconductor layer is subjected to polishing treatment. At least part of a region of the semiconductor layer is melted by irradiation with electromagnetic waves, and a crystal defect in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished and planarized by polishing treatment.
摘要翻译：本发明的一个目的是提供一种制造具有单晶半导体层的SOI衬底的方法，即使当具有低耐热温度的衬底如玻璃衬底或并且进一步通过使用这种SOI衬底制造具有高可靠性的半导体器件。将与半导体基板分离并与具有绝缘面的支撑基板接合的半导体层用电磁波照射，对半导体层的表面进行抛光处理。半导体层的区域的至少一部分通过电磁波的照射而熔融，能够降低半导体层的晶体缺陷。此外，半导体层的表面可以通过抛光处理被抛光和平坦化。

23. 发明授权

US07659138B2 Method for manufacturing an organic semiconductor element 有权
标题翻译：有机半导体元件的制造方法
公开(公告)号：US07659138B2
公开(公告)日：2010-02-09
申请号：US11011060
申请日：2004-12-15
申请人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
发明人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
IPC分类号： H01L51/40
CPC分类号： H01L51/0545 , B82Y30/00 , G02F1/1368 , G02F2202/025 , H01L51/0002 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0051 , H01L51/0053
摘要： In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere.
摘要翻译：在制造使用有机TFT的器件时，必须开发通道长度短或沟道宽度窄的元件，以减小器件的尺寸。基于上述，本发明的目的是提供一种改进了特性的有机TFT。鉴于上述问题，本发明的一个特征是在沉积有机半导体膜之后烘烤元件。更具体地，本发明的一个特征是有机半导体膜在大气压或减压下加热。此外，烘烤过程可以在惰性气体气氛中进行。

24. 发明授权

US08653520B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08653520B2
公开(公告)日：2014-02-18
申请号：US13021343
申请日：2011-02-04
申请人： Shunpei Yamazaki , Teruyuki Fujii , Ryota Imahayashi , Shinya Sasagawa , Motomu Kurata , Fumika Taguchi
发明人： Shunpei Yamazaki , Teruyuki Fujii , Ryota Imahayashi , Shinya Sasagawa , Motomu Kurata , Fumika Taguchi
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00 , H01L21/00 , H01L21/84
CPC分类号： H01L27/0688 , G11C16/0416 , G11C16/0433 , G11C16/28 , H01L27/1052 , H01L27/11521 , H01L27/11551 , H01L27/1156 , H01L27/1207 , H01L27/1225
摘要： An object is to provide a semiconductor device having a novel structure in which a transistor including an oxide semiconductor and a transistor including a semiconductor material other than an oxide semiconductor are stacked. The semiconductor device includes a first transistor, an insulating layer over the first transistor, and a second transistor over the insulating layer. In the semiconductor device, the first transistor includes a first channel formation region, the second transistor includes a second channel formation region, the first channel formation region includes a semiconductor material different from a semiconductor material of the second channel formation region, and the insulating layer includes a surface whose root-mean-square surface roughness is less than or equal to 1 nm.
摘要翻译：目的是提供一种具有新颖结构的半导体器件，其中包括氧化物半导体的晶体管和包括氧化物半导体之外的半导体材料的晶体管被堆叠。该半导体器件包括第一晶体管，第一晶体管上的绝缘层和绝缘层上的第二晶体管。在半导体器件中，第一晶体管包括第一沟道形成区，第二晶体管包括第二沟道形成区，第一沟道形成区包括与第二沟道形成区的半导体材料不同的半导体材料，绝缘层包括均方根表面粗糙度小于或等于1nm的表面。

25. 发明申请

US20100038636A1 ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE ORGANIC THIN FILM TRANSISTOR 有权
标题翻译：有机薄膜晶体管及其制造方法以及具有有机薄膜晶体管的半导体器件
公开(公告)号：US20100038636A1
公开(公告)日：2010-02-18
申请号：US12605537
申请日：2009-10-26
申请人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
发明人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
IPC分类号： H01L51/10
CPC分类号： H01L51/0545 , H01L51/0003 , H01L51/0037
摘要： There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture. The insulating film formed at the specific spot enables formation of the organic semiconductor film with high controllability. Further, the insulating film can also serve as a spacer that holds the aperture, that is, an interval (gap) between the substrates.
摘要翻译：存在的问题在于，制造有机薄膜晶体管的常规方法需要专用设备，并且其中：相对于材料的使用量形成少量的有机半导体膜; 大部分废旧材料被丢弃。此外，需要频繁地进行设备维护，例如清洁装置杯或室的内部，以便去除由废弃材料造成的污染。因此，需要维护设备的材料和工时的巨大成本。在本发明中，通过在用于形成有机半导体膜的第一基板和用于注入的第二基板之间形成孔，形成均匀的有机半导体膜，所述第二基板在形成于特定点处的绝缘膜通过注入有机半导体膜材料由于对孔径的毛细作用而进入孔径。形成在特定点的绝缘膜能够形成具有高可控性的有机半导体膜。此外，绝缘膜也可以用作保持孔的间隔物，即基板之间的间隔（间隙）。

26. 发明申请

US20100022070A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 审中-公开
标题翻译：制造SOI衬底的方法
公开(公告)号：US20100022070A1
公开(公告)日：2010-01-28
申请号：US12505720
申请日：2009-07-20
申请人： Ryota Imahayashi
发明人： Ryota Imahayashi
IPC分类号： H01L21/762
CPC分类号： H01L21/76254
摘要： It is an object to provide a method for, after a semiconductor film is separated, reprocessing a separated bond substrate into a reprocessed bond substrate which can be used for manufacturing an SOI substrate. The method for, after a semiconductor film is separated, reprocessing a separated bond substrate into a reprocessed bond substrate which can be used for manufacturing an SOI substrate includes the steps of forming an insulating film over a bond substrate; adding ions from a surface of the bond substrate to form an embrittlement layer; bonding the bond substrate to a glass substrate with the insulating film interposed therebetween; separating, at the embrittlement layer, the bond substrate into a semiconductor film which is bonded to the glass substrate with the insulating film interposed therebetween and a separated bond substrate; performing first wet etching using a solution containing hydrofluoric acid as an etchant on the separated bond substrate; performing second wet etching using an organic alkaline aqueous solution as an etchant on the separated bond substrate; performing thermal oxidation treatment on the separated bond substrate in an oxidizing atmosphere to which a gas containing halogen is added to form an oxide film on a surface of the separated bond substrate; performing third wet etching using a solution containing hydrofluoric acid as an etchant on the oxide film; and forming a reprocessed bond substrate by performing polishing on the separated bond substrate.
摘要翻译：本发明的目的是提供一种在分离半导体膜之后，将分离的键合衬底重新加工成可用于制造SOI衬底的再加工键合衬底的方法。在分离半导体膜之后，将分离的键合衬底重新处理成可用于制造SOI衬底的再结合衬底的方法包括以下步骤：在接合衬底上形成绝缘膜; 从所述键合衬底的表面添加离子以形成脆化层; 将所述接合基板与绝缘膜接合在玻璃基板上; 在所述脆化层将所述接合基板分离成半导体膜，所述半导体膜与所述玻璃基板接合，并且所述绝缘膜与所述接合基板分离; 使用在分离的键合衬底上含有氢氟酸作为蚀刻剂的溶液进行第一次湿蚀刻; 使用有机碱性水溶液作为分离的键合衬底上的蚀刻剂进行第二次湿蚀刻; 在分离的键合衬底的氧化气氛中进行热氧化处理，在其中加入含有卤素的气体以在分离的键合衬底的表面上形成氧化膜; 使用含有氢氟酸作为蚀刻剂的溶液在氧化膜上进行第三次湿蚀刻; 以及通过在分离的键合衬底上进行抛光来形成再加工的键合衬底。

27. 发明申请

US20090004878A1 Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device 失效
标题翻译：制造SOI衬底的方法和制造半导体器件的方法
公开(公告)号：US20090004878A1
公开(公告)日：2009-01-01
申请号：US12213137
申请日：2008-06-16
申请人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Ilkubo , Kenichiro Makino , Sho Nagamatsu
发明人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Ilkubo , Kenichiro Makino , Sho Nagamatsu
IPC分类号： H01L21/31
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/78654
摘要： It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and further, to manufacture a semiconductor device with high reliability by using such an SOI substrate. A semiconductor layer which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves, and the surface of the semiconductor layer is subjected to polishing treatment. At least part of a region of the semiconductor layer is melted by irradiation with electromagnetic waves, and a crystal defect in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished and planarized by polishing treatment.
摘要翻译：本发明的一个目的是提供一种制造具有单晶半导体层的SOI衬底的方法，即使当具有低耐热温度的衬底如玻璃衬底或并且进一步通过使用这种SOI衬底制造具有高可靠性的半导体器件。将与半导体基板分离并与具有绝缘面的支撑基板接合的半导体层用电磁波照射，对半导体层的表面进行抛光处理。半导体层的区域的至少一部分通过电磁波的照射而熔融，能够降低半导体层的晶体缺陷。此外，半导体层的表面可以通过抛光处理被抛光和平坦化。

28. 发明申请

US20090004764A1 Method for manufacturing SOI substrate and method for manufacturing semiconductor device 审中-公开
标题翻译：制造SOI衬底的方法和半导体器件的制造方法
公开(公告)号：US20090004764A1
公开(公告)日：2009-01-01
申请号：US12213510
申请日：2008-06-20
申请人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Iikubo , Kenichiro Makino , Sho Nagamatsu
发明人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Iikubo , Kenichiro Makino , Sho Nagamatsu
IPC分类号： H01L21/782 , H01L33/00 , H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： H01L27/1266 , H01L21/02164 , H01L21/02211 , H01L21/02271 , H01L21/31612 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： To provide a method for manufacturing an SOI substrate provided with a single-crystal semiconductor layer which is suitable for practical use even when a substrate of which heat-resistant temperature is low, such as a glass substrate, is used, and to manufacture a highly reliable semiconductor device using such an SOI substrate. A semiconductor layer, which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface, is heated by supplying high energy by using at least one kind of particles having the high energy, and polishing treatment is performed on the heated surface of the semiconductor layer. At least part of a region of the semiconductor layer can be melted by the heat treatment by supplying high energy to reduce crystal defects in the semiconductor layer. Further, the surface of the semiconductor layer can be polished and planarized by the polishing treatment.
摘要翻译：为了提供一种制造具有单晶半导体层的SOI衬底的方法，即使使用诸如玻璃衬底的耐热温度低的衬底也适用于实际使用，并且制造高度使用这种SOI衬底的可靠的半导体器件。通过使用至少一种具有高能量的颗粒提供高能量来加热与半导体衬底分离并结合到具有绝缘表面的支撑衬底的半导体层，并且对被加热表面进行抛光处理的半导体层。半导体层的区域的至少一部分可以通过提供高能量的热处理而熔化，以减少半导体层中的晶体缺陷。此外，可以通过抛光处理对半导体层的表面进行抛光和平坦化。

29. 发明申请

US20050139823A1 Organic semiconductor device and method for manufacturing the same 有权
标题翻译：有机半导体器件及其制造方法
公开(公告)号：US20050139823A1
公开(公告)日：2005-06-30
申请号：US11011027
申请日：2004-12-15
申请人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
发明人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
IPC分类号： H01L29/786 , H01L21/00 , H01L51/00 , H01L51/30 , H01L51/40 , H01L29/08 , H01L29/10
CPC分类号： B82Y10/00 , H01L51/0024 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0041 , H01L51/0051 , H01L51/0053 , H01L51/0093 , H01L51/0545
摘要： It is an object of the present invention to provide a method for manufacturing an inexpensive organic TFT which does not depend on an expensive dedicated device and does not expose an organic semiconductor to atmospheric air. Moreover, it is another object of the present invention to provide a method for manufacturing an organic TFT at low temperature so as not to cause a problem of pyrolyzing a material. In view of the foregoing problems, one feature of the present invention is that a film-like protector which serves as a protective film is provided over an organic semiconductor film. The film-like protector can be formed by being fixed to a film-like support body with an adhesive agent or the like.
摘要翻译：本发明的目的是提供一种不依赖于昂贵的专用装置并且不将有机半导体暴露于大气中的便宜的有机TFT的制造方法。此外，本发明的另一个目的是提供一种在低温下制造有机TFT的方法，从而不会引起材料的热解问题。鉴于上述问题，本发明的一个特征是在有机半导体膜上设置用作保护膜的膜状保护膜。膜状保护器可以通过用粘合剂等固定到膜状支撑体上而形成。

30. 发明授权

US08361873B2 Method of manufacturing an SOI substrate and method of manufacturing a semiconductor device 有权
公开(公告)号：US08361873B2
公开(公告)日：2013-01-29
申请号：US12762600
申请日：2010-04-19
申请人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Iikubo , Kenichiro Makino , Sho Nagamatsu
发明人： Hideto Ohnuma , Ryota Imahayashi , Yoichi Iikubo , Kenichiro Makino , Sho Nagamatsu
IPC分类号： H01L21/331 , H01L21/8222
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/78654
摘要： It is an object of the present invention is to provide a method of manufacturing an SOI substrate provided with a single-crystal semiconductor layer which can be practically used even when a substrate having a low heat-resistant temperature, such as a glass substrate or the like, is used, and further, to manufacture a semiconductor device with high reliability by using such an SOI substrate. A semiconductor layer which is separated from a semiconductor substrate and bonded to a supporting substrate having an insulating surface is irradiated with electromagnetic waves, and the surface of the semiconductor layer is subjected to polishing treatment. At least part of a region of the semiconductor layer is melted by irradiation with electromagnetic waves, and a crystal defect in the semiconductor layer can be reduced. Further, the surface of the semiconductor layer can be polished and planarized by polishing treatment.

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