专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08362474B2 Organic field effect transistor and semiconductor device 有权
标题翻译：有机场效应晶体管和半导体器件
公开(公告)号：US08362474B2
公开(公告)日：2013-01-29
申请号：US13280596
申请日：2011-10-25
申请人： Shinobu Furukawa , Ryota Imahayashi , Kaoru Kato
发明人： Shinobu Furukawa , Ryota Imahayashi , Kaoru Kato
IPC分类号： H01L51/30
CPC分类号： C07D209/88 , H01L51/0059 , H01L51/006 , H01L51/0061 , H01L51/0072 , H01L51/0508
摘要： It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.
摘要翻译：本发明的目的是提供一种包括能够降低导电层和半导体层之间的界面处的能量势垒的电极的有机场效应晶体管，以及包括该有机场效应晶体管的半导体器件。在有机场效应晶体管中的源电极和漏电极的至少一部分中设置含有有机化合物和无机化合物的复合层，作为有机化合物，可以使用通式（1）表示的咔唑衍生物）用来。通过在源电极和漏电极中的至少一部分中提供复合层，可以减少导电层和半导体层之间的界面处的能量势垒。

2. 发明授权

US08318588B2 Method for reprocessing semiconductor substrate, method for manufacturing reprocessed semiconductor substrate, and method for manufacturing SOI substrate 有权
标题翻译：半导体基板的再加工方法，再加工半导体基板的制造方法以及SOI基板的制造方法
公开(公告)号：US08318588B2
公开(公告)日：2012-11-27
申请号：US12859547
申请日：2010-08-19
申请人： Ryota Imahayashi , Hideto Ohnuma
发明人： Ryota Imahayashi , Hideto Ohnuma
IPC分类号： H01L21/46 , H01L21/36
CPC分类号： H01L21/76254 , H01L21/02024 , H01L21/02032 , H01L21/02052 , H01L21/0206 , H01L21/30604 , H01L21/3221
摘要： It is an object of the invention is to provide a method suitable for reprocessing a semiconductor substrate having favorable planarity. Another object of the invention is to manufacture a reprocessed semiconductor substrate by using the method suitable for reprocessing a semiconductor substrate having favorable planarity, and to manufacture an SOI substrate by using the reprocessed semiconductor substrate. A projecting portion of a semiconductor substrate is removed using a method capable of selectively removing a semiconductor region which is damaged by ion irradiation or the like. Further, an oxide film is formed on a surface of the semiconductor substrate when the semiconductor substrate is planarized by a polishing treatment typified by a CMP method, whereby the semiconductor substrate is evenly polished at a uniform rate. Moreover, a reprocessed semiconductor substrate is manufactured using the aforementioned method, and an SOI substrate is manufactured using the reprocessed semiconductor substrate.
摘要翻译：本发明的目的是提供一种适于对具有良好平坦度的半导体衬底进行再加工的方法。本发明的另一个目的是通过使用适合于对具有良好平面性的半导体衬底进行再处理的方法来制造再处理的半导体衬底，以及通过使用再处理的半导体衬底来制造SOI衬底。使用能够选择性地去除由离子照射等损坏的半导体区域的方法来去除半导体衬底的突出部分。此外，当通过以CMP方法为代表的抛光处理使半导体衬底平坦化时，在半导体衬底的表面上形成氧化物膜，由此以均匀的速率均匀地抛光半导体衬底。此外，使用上述方法制造再处理的半导体衬底，并且使用再处理的半导体衬底制造SOI衬底。

3. 发明授权

US07560735B2 Semiconductor element, organic transistor, light-emitting device, and electronic device 有权
标题翻译：半导体元件，有机晶体管，发光器件和电子器件
公开(公告)号：US07560735B2
公开(公告)日：2009-07-14
申请号：US11379014
申请日：2006-04-17
申请人： Shinobu Furukawa , Ryota Imahayashi
发明人： Shinobu Furukawa , Ryota Imahayashi
IPC分类号： H01L31/12
CPC分类号： H01L51/105 , H01L51/0061 , H01L51/0072 , H01L51/0541 , H01L51/0545 , H01L51/5203 , H01L51/5296
摘要： It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which light emission can be obtained, which can be manufactured simply and easily. According to an organic light-emitting transistor, a composite layer containing an organic compound having a hole-transporting property and a metal oxide is used as part of the electrode that injects holes among source and drain electrodes, and a composite layer containing an organic compound having an electron-transporting property and an alkaline metal or an alkaline earth metal is used as part of the electrode that injects electrons, where either composite layer has a structure of being in contact with an organic semiconductor layer.
摘要翻译：本发明的目的是提供一种具有低驱动电压的有机晶体管。本发明的另一个目的是提供可以简单且容易地制造可以获得发光的有机晶体管。根据有机发光晶体管，使用含有空穴传输性有机化合物的复合层和金属氧化物作为在源极和漏极之间注入空穴的电极的一部分，以及含有有机化合物的复合层具有电子传输性和碱金属或碱土金属作为注入电子的电极的一部分，其中复合层具有与有机半导体层接触的结构。

4. 发明授权

US06821811B2 Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor 失效
公开(公告)号：US06821811B2
公开(公告)日：2004-11-23
申请号：US10628260
申请日：2003-07-29
申请人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
发明人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
IPC分类号： H01L2100
CPC分类号： H01L51/0545 , H01L51/0003 , H01L51/0037
摘要： There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture. The insulating film formed at the specific spot enables formation of the organic semiconductor film with high controllability. Further, the insulating film can also serve as a spacer that holds the aperture, that is, an interval (gap) between the substrates.

5. 发明授权

US08368065B2 Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor 有权
公开(公告)号：US08368065B2
公开(公告)日：2013-02-05
申请号：US13160811
申请日：2011-06-15
申请人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
发明人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
IPC分类号： H01L51/30
CPC分类号： H01L51/0545 , H01L51/0003 , H01L51/0037
摘要： There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture. The insulating film formed at the specific spot enables formation of the organic semiconductor film with high controllability. Further, the insulating film can also serve as a spacer that holds the aperture, that is, an interval (gap) between the substrates.

6. 发明授权

US08343816B2 Organic transistor, manufacturing method of semiconductor device and organic transistor 有权
标题翻译：有机晶体管，半导体器件和有机晶体管的制造方法
公开(公告)号：US08343816B2
公开(公告)日：2013-01-01
申请号：US12850652
申请日：2010-08-05
申请人： Ryota Imahayashi , Shinobu Furukawa , Atsuo Isobe , Yasuyuki Arai , Shunpei Yamazaki
发明人： Ryota Imahayashi , Shinobu Furukawa , Atsuo Isobe , Yasuyuki Arai , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L51/0512 , H01L21/02175 , H01L21/02244 , H01L21/02247 , H01L21/02252 , H01L21/31683 , H01L51/0002 , H01L51/0055 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/0566
摘要： It is an object to form a high quality gate insulating film which is dense and has a strong insulation resistance property, and to propose a high reliable organic transistor in which a tunnel leakage current is little. One mode of the organic transistor of the present invention has a step of forming the gate insulating film by forming the conductive layer which becomes the gate electrode activating oxygen (or gas including oxygen) or nitrogen (or gas including nitrogen) or the like using dense plasma in which density of electron is 1011 cm−3 or more, and electron temperature is a range of 0.2 eV to 2.0 eV with plasma activation, and reacting directly with a portion of the conductive layer which becomes the gate electrode to be insulated.
摘要翻译：本发明的目的是形成致密且具有很强绝缘电阻特性的高质量栅极绝缘膜，并且提出了隧道泄漏电流很小的高可靠性有机晶体管。本发明的有机晶体管的一种模式具有如下步骤：通过使用密集的方法形成作为活化氧（或含氧气体）或氮（或含氮气体）的栅极的导电层形成栅极绝缘膜电子密度为1011cm -3以上的等离子体，等离子体活化时电子温度为0.2eV〜2.0eV的范围，直接与成为要被绝缘的栅电极的导体层的一部分反应。

7. 发明授权

US08202760B2 Method for manufacturing an organic semiconductor element 有权
标题翻译：有机半导体元件的制造方法
公开(公告)号：US08202760B2
公开(公告)日：2012-06-19
申请号：US13153515
申请日：2011-06-06
申请人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
发明人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
IPC分类号： H01L51/40
CPC分类号： H01L51/0545 , B82Y30/00 , G02F1/1368 , G02F2202/025 , H01L51/0002 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0051 , H01L51/0053
摘要： In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere.
摘要翻译：在制造使用有机TFT的器件时，必须开发通道长度短或沟道宽度窄的元件，以减小器件的尺寸。基于上述，本发明的目的是提供一种改进了特性的有机TFT。鉴于上述问题，本发明的一个特征是在沉积有机半导体膜之后烘烤元件。更具体地，本发明的一个特征是有机半导体膜在大气压或减压下加热。此外，烘烤过程可以在惰性气体气氛中进行。

8. 发明授权

US08164098B2 Semiconductor element, organic transistor, light-emitting device, and electronic device 有权
标题翻译：半导体元件，有机晶体管，发光器件和电子器件
公开(公告)号：US08164098B2
公开(公告)日：2012-04-24
申请号：US12498512
申请日：2009-07-07
申请人： Shinobu Furukawa , Ryota Imahayashi
发明人： Shinobu Furukawa , Ryota Imahayashi
IPC分类号： H01L31/12
CPC分类号： H01L51/105 , H01L51/0061 , H01L51/0072 , H01L51/0541 , H01L51/0545 , H01L51/5203 , H01L51/5296
摘要： It is an object of the present invention to provide an organic transistor having a low drive voltage. It is also another object of the present invention to provide an organic transistor, in which light emission can be obtained, which can be manufactured simply and easily. According to an organic light-emitting transistor, a composite layer containing an organic compound having a hole-transporting property and a metal oxide is used as part of the electrode that injects holes among source and drain electrodes, and a composite layer containing an organic compound having an electron-transporting property and an alkaline metal or an alkaline earth metal is used as part of the electrode that injects electrons, where either composite layer has a structure of being in contact with an organic semiconductor layer.
摘要翻译：本发明的目的是提供一种具有低驱动电压的有机晶体管。本发明的另一个目的是提供可以简单且容易地制造可以获得发光的有机晶体管。根据有机发光晶体管，使用含有空穴传输性有机化合物的复合层和金属氧化物作为在源极和漏极之间注入空穴的电极的一部分，以及含有有机化合物的复合层具有电子传输性和碱金属或碱土金属作为注入电子的电极的一部分，其中复合层具有与有机半导体层接触的结构。

9. 发明授权

US07977150B2 Method for manufacturing an organic semiconductor element 有权
标题翻译：有机半导体元件的制造方法
公开(公告)号：US07977150B2
公开(公告)日：2011-07-12
申请号：US12683193
申请日：2010-01-06
申请人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
发明人： Yoshiharu Hirakata , Tetsuji Ishitani , Shuji Fukai , Ryota Imahayashi
IPC分类号： H01L51/40
CPC分类号： H01L51/0545 , B82Y30/00 , G02F1/1368 , G02F2202/025 , H01L51/0002 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0051 , H01L51/0053
摘要： In manufacturing a device using an organic TFT, it is essential to develop an element in which a channel length is short or a channel width is narrow to downsize a device. Based on the above, it is an object of the present invention to provide an organic TFT in which characteristic is improved. In view of the foregoing problem, one feature of the present invention is that an element is baked after an organic semiconductor film is deposited. More specifically, one feature of the present invention is that the organic semiconductor film is heated under atmospheric pressure or under reduced pressure. Moreover, a baking process may be carried out in an inert gas atmosphere.
摘要翻译：在制造使用有机TFT的器件时，必须开发通道长度短或沟道宽度窄的元件，以减小器件的尺寸。基于上述，本发明的目的是提供一种改进了特性的有机TFT。鉴于上述问题，本发明的一个特征是在沉积有机半导体膜之后烘烤元件。更具体地，本发明的一个特征是有机半导体膜在大气压或减压下加热。此外，烘烤过程可以在惰性气体气氛中进行。

10. 发明授权

US07875494B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07875494B2
公开(公告)日：2011-01-25
申请号：US12699962
申请日：2010-02-04
申请人： Shinobu Furukawa , Ryota Imahayashi
发明人： Shinobu Furukawa , Ryota Imahayashi
IPC分类号： H01L21/00 , H01L51/40 , H01L29/08 , H01L35/24 , H01L51/00 , H01L21/34
CPC分类号： H01L51/0545 , B82Y10/00 , H01L27/283 , H01L27/3244 , H01L51/0046 , H01L51/0059 , H01L51/0068 , H01L51/0078 , H01L51/0562
摘要： It is an object of the present invention to form an organic transistor including an organic semiconductor having high crystallinity without loosing an interface between an organic semiconductor of a channel where carriers are spread out and a gate insulating layer and deteriorating a yield. A semiconductor device according to the present invention has a stacked structure of organic semiconductor layers, and at least the upper organic semiconductor layer is in a polycrystalline or a single crystalline state and the lower organic semiconductor layer is made of a material serving as a channel. Carrier mobility can be increased owing to the upper organic semiconductor layer having high crystallinity; thus, insufficient contact due to the upper organic semiconductor layer can be compensated by the lower organic semiconductor layer.
摘要翻译：本发明的目的是形成具有高结晶度的有机半导体的有机晶体管，而不会失去载流子扩散的沟道的有机半导体与栅极绝缘层之间的界面，从而劣化产率。根据本发明的半导体器件具有有机半导体层的堆叠结构，并且至少上部有机半导体层处于多晶或单晶状态，下部有机半导体层由用作沟道的材料制成。由于具有高结晶度的上有机半导体层可以增加载流子迁移率; 因此，通过下部有机半导体层可以补偿由于上部有机半导体层引起的接触不足。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式