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21. 发明授权

US07535026B2 Semiconductor light-emitting device with high brightness and low operating voltage 失效
标题翻译：具有高亮度和低工作电压的半导体发光器件
公开(公告)号：US07535026B2
公开(公告)日：2009-05-19
申请号：US11511220
申请日：2006-08-29
申请人： Kazuyuki Iizuka , Taichiroo Konno , Masahiro Arai
发明人： Kazuyuki Iizuka , Taichiroo Konno , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/025 , H01L33/30 , H01L33/42
摘要： A semiconductor light-emitting device has a semiconductor substrate, an n-type cladding layer, an active layer, a p-type cladding layer, a p-type buffer layer, a p-type contact layer, and a current spreading layer. A part or all of the p-type buffer layer has a low Mg concentration buffer layer with a Mg concentration of 3.0×1017/cm3 or less and a film thickness of 50 nm or more.
摘要翻译：半导体发光器件具有半导体衬底，n型覆层，有源层，p型覆层，p型缓冲层，p型接触层和电流扩展层。一部分或全部p型缓冲层具有Mg浓度为3.0×10 17 / cm 3以下，膜厚为50nm以上的低Mg浓度缓冲层。

22. 发明申请

US20060213331A1 Method for reducing metal oxide and method for producing hydrogen 审中-公开
标题翻译：还原金属氧化物的方法及其制造方法
公开(公告)号：US20060213331A1
公开(公告)日：2006-09-28
申请号：US10556171
申请日：2004-02-24
申请人： Kiyoshi Otsuka , Sakae Takenaka , Kiyozumi Nakamura , Kazuyuki Iizuka
发明人： Kiyoshi Otsuka , Sakae Takenaka , Kiyozumi Nakamura , Kazuyuki Iizuka
IPC分类号： C22B23/00 , C22B11/02 , C22B15/00 , C01B3/02
CPC分类号： C22B5/12 , C01B3/061 , Y02E60/364
摘要： A method for reducing a metal oxide and a method for manufacturing hydrogen are provided for easily reducing an oxide of a metal that decomposes water to generate hydrogen, using a gas that includes hydrocarbons, such as municipal gas. The method for reducing the metal oxide includes the step of reducing, using a reducing gas that includes hydrocarbons, a medium comprising an oxide of a metal that decomposes water to generate hydrogen, and at least one metal selected from the group consisting of platinum group elements, copper, nickel and cobalt. Furthermore, the method for manufacturing hydrogen includes the above-described reducing step, and a water-decomposing step of reacting water with the medium that is reduced in the reducing step, to generate hydrogen.
摘要翻译：提供一种还原金属氧化物的方法和氢的制造方法，其使用包括诸如城市气体的烃的气体容易地还原分解水以产生氢的金属的氧化物。用于还原金属氧化物的方法包括使用包含烃的还原气体还原包含分解水以产生氢的金属氧化物的介质和选自铂族元素中的至少一种金属的步骤，铜，镍和钴。此外，制造氢的方法包括上述还原步骤和使水与在还原步骤中还原的介质反应产生氢的水分解步骤。

23. 发明申请

US20050255037A1 Method for producing hydrogen and apparatus for supplying hydrogen 审中-公开
标题翻译：用于生产氢的方法和用于供应氢的装置
公开(公告)号：US20050255037A1
公开(公告)日：2005-11-17
申请号：US10519080
申请日：2003-05-15
申请人： Kiyoshi Otsuka , Sakae Takenaka , Kiyozumi Nakamura , Kazuyuki Iizuka
发明人： Kiyoshi Otsuka , Sakae Takenaka , Kiyozumi Nakamura , Kazuyuki Iizuka
IPC分类号： B01J7/02 , B01J8/00 , B01J8/02 , C01B3/06 , C01B3/10
CPC分类号： B01J8/006 , B01J7/02 , B01J8/025 , B01J8/0285 , B01J2208/00212 , B01J2208/00495 , C01B3/06 , C01B3/061 , C01B3/10 , Y02E60/36
摘要： A method for producing hydrogen by contacting water, steam or gas containing steam with iron or iron oxide, wherein the iron or iron oxide is added with at least one metal of Rh, Ir, Ru, Pd, Pt and Os and at least one metal of Ti, Zr, V, Nb, Cr, Mo, Al, Ga, Mg, Sc, Ni and Cu. The method provides a medium for producing hydrogen which is capable of producing hydrogen at relatively low temperature and at a great generation rate, is free from the decrease of activity, and is resistance to repeated oxidation and reduction, which leads to the decomposition of water and production of hydrogen with good efficiency.
摘要翻译：通过使含有蒸汽的水，蒸气或含气体与铁或氧化铁接触而产生氢的方法，其中所述铁或氧化铁中加入至少一种Rh，Ir，Ru，Pd，Pt和Os的金属和至少一种金属的Ti，Zr，V，Nb，Cr，Mo，Al，Ga，Mg，Sc，Ni和Cu。该方法提供一种生产氢的介质，该介质能够在相对较低的温度和较高的发生速度下产生氢，不会降低活性，并且具有抗重复氧化和还原的能力，这导致水的分解和生产氢气效率高。

24. 发明授权

US06869585B2 Method and apparatus for supplying hydrogen and portable cassette for supplying hydrogen 有权
标题翻译：用于供应氢气和用于供应氢的便携式盒的方法和装置
公开(公告)号：US06869585B2
公开(公告)日：2005-03-22
申请号：US10110395
申请日：2001-06-13
申请人： Kiyoshi Otsuka , Kiyozumi Nakamura , Kazuyuki Iizuka
发明人： Kiyoshi Otsuka , Kiyozumi Nakamura , Kazuyuki Iizuka
IPC分类号： B01J8/00 , B01J8/02 , C01B3/06 , C01B3/26 , C21B13/00 , H01M8/04 , H01M8/06
CPC分类号： C21B13/0073 , B01J8/0085 , B01J8/0242 , B01J8/0285 , B01J2208/00168 , C01B3/061 , C01B3/063 , C01B3/26 , C01B2203/0277 , C01B2203/066 , C01B2203/1047 , C01B2203/1052 , C01B2203/1082 , C21B2100/44 , H01M8/04089 , H01M8/0612 , Y02E60/324 , Y02E60/36 , Y02P10/136 , Y02P10/143
摘要： Provided is a method of and an apparatus for decomposing hydrogen. The method includes the steps of introducing hydrocarbons into a reaction vessel in a closed-loop system, at least partially decomposing the hydrocarbons into hydrogen by heating the hydrocarbons in the reaction vessel in the presence of a catalyst, introducing the hydrogen into a cassette with metal oxide contained therein, reducing the metal oxide in the cassette to metal or metal oxide having a lower valence by at least partially reacting the metal oxide with the hydrogen to form water, and returning unreacted hydrogen to the reaction vessel. Also provided is a method for producing hydrogen for an apparatus in need thereof.
摘要翻译：提供了一种用于分解氢的方法和装置。该方法包括以下步骤：在闭环系统中将烃引入反应容器中，通过在催化剂存在下加热反应容器中的烃，至少部分地将烃分解成氢气，将氢气引入带有金属的盒中其中含有氧化物，通过至少部分地使金属氧化物与氢反应形成水，并将未反应的氢返回到反应容器中，将盒中的金属氧化物还原为具有较低价态的金属或金属氧化物。还提供了用于生产有需要的装置的氢的方法。

25. 发明授权

US08237180B2 Light emitting element including center electrode and thin wire electrode extending from periphery of the center electrode 有权
标题翻译：发光元件包括从中心电极的周边延伸的中心电极和细线电极
公开(公告)号：US08237180B2
公开(公告)日：2012-08-07
申请号：US12656176
申请日：2010-01-20
申请人： Kazuyuki Iizuka , Masahiro Arai
发明人： Kazuyuki Iizuka , Masahiro Arai
IPC分类号： H01L27/15
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/405
摘要： A light emitting element includes a semiconductor laminated structure including a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a surface electrode including a center electrode disposed on one surface of the semiconductor laminated structure and a thin wire electrode extending from a periphery of the center electrode, and a contact part disposed on a part of another surface of the semiconductor laminated structure extruding a part located directly below the surface electrode, in parallel along the thin wire electrode, and including a plurality of first regions forming the shortest current pathway between the thin wire electrode and a second region allowing the plural first regions to be connected. The surface electrode has an arrangement that the shortest current pathway between the center electrode and the contact part is longer than the shortest current pathway between the thin wire electrode and the first region, and the shortest current pathway between an end part of the thin wire electrode and the contact part is not shorter than the shortest current pathway between the thin wire electrode and the first region.
摘要翻译：发光元件包括半导体层叠结构，包括第一导电类型的第一半导体层，不同于第一导电类型的第二导电类型的第二半导体层和夹在第一半导体层和第二半导体层之间的有源层，包括设置在半导体层叠结构的一个表面上的中心电极的表面电极和从中心电极的周边延伸的细线电极，以及设置在半导体叠层结构的另一表面的一部分上的接触部分，其挤出位于在细线电极的正下方，与细线电极并联，并且包括形成细线电极与允许多个第一区域连接的第二区域之间的最短电流通路的多个第一区域。表面电极具有这样的布置：中心电极和接触部分之间的最短电流通路比细线电极和第一区域之间的最短电流通路长，并且细线电极端部之间的最短电流通路并且接触部分不小于细线电极和第一区域之间的最短电流通路。

26. 发明授权

US08120046B2 Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：US08120046B2
公开(公告)日：2012-02-21
申请号：US12585827
申请日：2009-09-25
申请人： Kazuyuki Iizuka , Masahiro Arai
发明人： Kazuyuki Iizuka , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387
摘要： A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type and an active layer sandwiched by the first and second semiconductor layers, a first electrode on one surface side of the semiconductor laminated structure, a conductive reflective layer on an other surface side of the semiconductor laminated structure for reflecting light emitted from the active layer, a contact portion partially formed between the semiconductor laminated structure and the conductive reflective layer and being in ohmic contact with the semiconductor laminated structure, and a second electrode on a part of a surface of the conductive reflective layer on the semiconductor laminated structure without contacting the semiconductor laminated structure for feeding current to the contact portion.
摘要翻译：发光元件包括半导体叠层结构，其包括第一导电类型的第一半导体层，不同于第一导电类型的第二导电类型的第二半导体层和由第一和第二半导体层夹持的有源层，在半导体层叠结构的一个表面侧的第一电极，在用于反射从有源层发射的光的半导体层叠结构的另一个表面侧上的导电反射层，部分地形成在半导体层叠结构和导电反射层之间的接触部并且与半导体层叠结构欧姆接触，并且在半导体层叠结构上的导电反射层的一部分表面上的第二电极，而不接触用于将电流馈送到接触部分的半导体层叠结构。

27. 发明授权

US07692203B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US07692203B2
公开(公告)日：2010-04-06
申请号：US11907976
申请日：2007-10-19
申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
发明人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/405
摘要： A plurality of semiconductor layers including an active layer 6 and a light extract layer 4, and a reflective metal film 11 are formed in a semiconductor light emitting device. The light extract layer 4 is formed of a plurality of layers 23, 24 having different composition ratios. An irregularity 22 is formed on the layers 23, 24 including an outermost layer to provide a main surface S as a rough-surface.
摘要翻译：在半导体发光器件中形成包括有源层6和光提取层4的多个半导体层以及反射金属膜11。光提取层4由具有不同组成比的多个层23,24形成。在包括最外层的层23,24上形成凹凸22，以提供作为粗糙表面的主表面S.

28. 发明申请

US20100065869A1 Light emitting device and method for fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20100065869A1
公开(公告)日：2010-03-18
申请号：US12461008
申请日：2009-07-29
申请人： Masahiro Arai , Kazuyuki Iizuka
发明人： Masahiro Arai , Kazuyuki Iizuka
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： H01L33/0079 , H01L33/387 , H01L33/46
摘要： A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate of Si or Ge is provided at an opposite side of the reflecting layer with respect to the side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. A back surface electrode is provided at an opposite side of the supporting substrate with respect to a side of the metal bonding layer and includes Au alloyed with the support substrate. A hardness of the back surface electrode is higher than a hardness of the Au.
摘要翻译：发光器件包括具有第一导电类型的第一半导体层，第二导电类型的第二半导体层和有源层的半导体多层结构。反射层设置在半导体多层结构的一个表面的一侧，并且反射从有源层发射的光。在反射层的相对于半导体多层结构侧的相反侧设置有Si或Ge的支撑基板，并且经由金属接合层支撑半导体多层结构。背面电极相对于金属接合层的一侧设置在支撑基板的相对侧，并且包括与支撑基板合金化的Au。背面电极的硬度高于Au的硬度。

29. 发明授权

US07608859B2 Semiconductor light-emitting device with transparent conductive film 失效
标题翻译：具有透明导电膜的半导体发光器件
公开(公告)号：US07608859B2
公开(公告)日：2009-10-27
申请号：US11485316
申请日：2006-07-13
申请人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
发明人： Taichiroo Konno , Kazuyuki Iizuka , Masahiro Arai
IPC分类号： H01L27/15
CPC分类号： H01L33/14 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02546 , H01L33/02 , H01L33/025
摘要： A semiconductor light-emitting device with a transparent conductive film has: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1×1019/cm3 or more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film made of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer. The buffer layer has two or more buffer layer parts, and the adjacent buffer layer parts are different each other in material or composition.
摘要翻译：具有透明导电膜的半导体发光器件具有形成在半导体衬底上的发光部分，所述发光部分具有n型覆盖层，有源层和p型覆盖层; 形成在发光部分上的As基接触层，所述接触层掺杂有1×1019 / cm3以上的p型掺杂剂; 形成在所述接触层上的电流扩展层，所述电流扩散层由由金属氧化物材料制成的透明导电膜形成; 以及形成在所述接触层和所述p型覆盖层之间的缓冲层。缓冲层具有两个以上的缓冲层部分，相邻的缓冲层部分在材料或组成上彼此不同。

30. 发明申请

US20090206354A1 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US20090206354A1
公开(公告)日：2009-08-20
申请号：US12230234
申请日：2008-08-26
申请人： Nobuaki Kitano , Masahiro Arai , Kazuyuki Iizuka
发明人： Nobuaki Kitano , Masahiro Arai , Kazuyuki Iizuka
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/0079 , H01L33/387 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light-emitting device includes a support structure, and a light-emitting structure. The support structure includes a support substrate, and a support substrate side bonding layer disposed on one surface of the support substrate. The light-emitting structure includes a light-emitting structure side bonding layer bonded to the support substrate side bonding layer, a reflection region disposed on the support substrate side bonding layer opposite the support substrate, and a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light. The reflection region includes a transparent layer of a material with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer of a metallic material. The transparent layer has such a thickness that interference caused by multiple reflection of light inputted to the transparent layer can be suppressed.
摘要翻译：半导体发光器件包括支撑结构和发光结构。支撑结构包括支撑基板和设置在支撑基板的一个表面上的支撑基板侧接合层。发光结构包括结合到支撑基板侧接合层的发光结构侧接合层，设置在与支撑基板相对的支撑基板侧接合层上的反射区域，以及包括发光层设置在与发光结构侧接合层相对的反射区域，用于发射具有预定波长的光;以及光提取表面，设置在与反射区域相对的发光层上，用于漫反射地反射光。反射区域包括具有比半导体多层结构的折射率低的材料的透明层和金属材料的反射层。透明层具有能够抑制由输入到透明层的光的多次反射引起的干涉的厚度。

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