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21. 发明授权

US06518598B1 III-nitride LED having a spiral electrode 有权
标题翻译：具有螺旋电极的III族氮化物LED
公开(公告)号：US06518598B1
公开(公告)日：2003-02-11
申请号：US10052588
申请日：2002-01-23
申请人： Shi-Ming Chen
发明人： Shi-Ming Chen
IPC分类号： H01L3300
CPC分类号： H01L33/38 , H01L33/20
摘要： A structure of III-nitride light emitting diode (LED) having spiral electrodes and a manufacturing method thereof. The present invention uses an etching or polishing method to form a spiral-shaped trench in the surface of the epitaxial structure of LED, so that two metal electrodes having opposite electrical properties, formed in following steps, have the spiral-shaped pattern structures in parallel. The structure of III-nitride LED having spiral electrodes formed by the method of the present invention can evenly distribute the injected current between two electrodes having opposite electrical properties, thereby having the advantages of good current-spreading efficiency and the uniform light-emitting area. In addition, the photon ejected to the surface of diode produced with a large angle can be extracted from the side of the trench that is exposed by etching spiral-shaped pattern, so that the extraction efficiency of photon is increased.
摘要翻译：具有螺旋电极的III族氮化物发光二极管（LED）的结构及其制造方法。本发明使用蚀刻或抛光方法在LED的外延结构的表面中形成螺旋形沟槽，使得具有相反电性能的两个金属电极在后续步骤中形成，其螺旋形图案结构是平行的。通过本发明的方法形成的具有螺旋状电极的III族氮化物LED的结构，能够均匀地分布具有相反电特性的两个电极之间的注入电流，具有良好的电流扩散效率和均匀的发光面积。此外，可以从通过蚀刻螺旋形图案暴露的沟槽侧提取以大角度产生的二极管表面的光子，从而提高光子的提取效率。

22. 发明授权

US06486500B1 Led structure having a schottky contact and manufacturing method 有权
标题翻译：具有肖特基接触和制造方法的LED结构
公开(公告)号：US06486500B1
公开(公告)日：2002-11-26
申请号：US10055953
申请日：2002-01-28
申请人： Shi-Ming Chen
发明人： Shi-Ming Chen
IPC分类号： H01L3300
CPC分类号： H01L33/40 , H01L33/0033
摘要： A structure and manufacturing method of LED is disclosed. The manufacturing method of the structure of LED comprises: providing a substrate; on the substrate, forming in sequence a buffer layer, a first confining layer, an active layer, a second confining layer and a window layer; forming a first metal electrode beneath the substrate; forming a second metal electrode on the window layer, wherein there is a schottky contact surface between the second metal electrode and the window layer; forming a third metal electrode on the second metal electrode, wherein the third metal electrode has a feature of high melting point; forming a fourth metal electrode on the third metal electrode and the window layer, wherein there is an ohmic contact surface between the window layer and the fourth metal electrode; and forming a fifth metal electrode on the fourth metal electrode, wherein the fifth metal electrode has a feature of good adhesion, and when the substrate, the buffer layer and the first confining layer are n-type or p-type, the type of the second confining layer and window layer are opposite. The carriers are blocked from moving downward by the energy barrier between the schottky electrode and the window layer, so that the carriers are forced to spread around enormously. Furthermore, by utilizing the third metal electrode having high melting point to be a block between the fourth metal electrode and the second metal electrode, the schottky contact induced between the window layer and the second metal electrode can be maintained. Thus, irradiation efficiency of LED is enhanced.
摘要翻译：公开了一种LED的结构和制造方法。 LED结构的制造方法包括：提供基板; 在衬底上，依次形成缓冲层，第一限制层，有源层，第二约束层和窗口层; 在基底下方形成第一金属电极; 在所述窗口层上形成第二金属电极，其中在所述第二金属电极和所述窗口层之间存在肖特基接触表面; 在所述第二金属电极上形成第三金属电极，其中所述第三金属电极具有高熔点的特征; 在所述第三金属电极和所述窗口层上形成第四金属电极，其中在所述窗口层和所述第四金属电极之间存在欧姆接触面; 以及在所述第四金属电极上形成第五金属电极，其中所述第五金属电极具有良好的附着性，并且当所述基板，所述缓冲层和所述第一约束层为n型或p型时，第二限制层和窗口层相反。载流子被肖特基电极和窗口层之间的能量阻挡物阻挡向下移动，使得载体被迫大量扩散。此外，通过利用具有高熔点的第三金属电极作为第四金属电极和第二金属电极之间的块，可以保持在窗口层和第二金属电极之间引起的肖特基接触。因此，LED的照射效率提高。

23. 发明授权

US07696068B2 Method for manufacturing vertical light-emitting diode 有权
标题翻译：制造垂直发光二极管的方法
公开(公告)号：US07696068B2
公开(公告)日：2010-04-13
申请号：US11971861
申请日：2008-01-09
申请人： Shi-Ming Chen
发明人： Shi-Ming Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/0079
摘要： A method for manufacturing a vertical light-emitting diode is described. In the method for manufacturing the vertical light-emitting diode, a sapphire substrate is provided. An illuminant epitaxial structure is formed on the sapphire substrate. Next, a first conductivity type electrode is formed on a surface of the illuminant epitaxial structure. Then, a local removal step is performed to remove a portion of the sapphire substrate from another surface of the illuminant epitaxial structure and to expose a portion of the other surface of the illuminant epitaxial structure, wherein the other surface is opposite to the surface of the illuminant epitaxial structure. Subsequently, a second conductivity type electrode is formed on the exposed portion of the other surface of the illuminant epitaxial structure, wherein the first conductivity type electrode and the second conductivity type electrode are opposite conductivity types.
摘要翻译：对垂直发光二极管的制造方法进行说明。在制造垂直发光二极管的方法中，提供蓝宝石衬底。在蓝宝石衬底上形成发光体外延结构。接下来，在发光体外延结构的表面上形成第一导电型电极。然后，执行局部去除步骤以从发光体外延结构的另一表面去除蓝宝石衬底的一部分，并且暴露光源外延结构的另一表面的一部分，其中另一个表面与光源外延结构。随后，在发光体外延结构的另一个表面的暴露部分上形成第二导电型电极，其中第一导电型电极和第二导电型电极是相反的导电类型。

24. 发明授权

US07544971B2 Lateral current blocking light-emitting diode and method for manufacturing the same 有权
标题翻译：横向阻流发光二极管及其制造方法
公开(公告)号：US07544971B2
公开(公告)日：2009-06-09
申请号：US11226828
申请日：2005-09-14
申请人： Shi-Ming Chen
发明人： Shi-Ming Chen
IPC分类号： H01L27/15
CPC分类号： H01L33/38 , H01L33/145 , H01L33/20
摘要： A lateral current blocking light-emitting diode and a method for manufacturing the same are disclosed. The light-emitting diode comprises an insulating substrate, a semiconductor epitaxial structure and electrodes of different conductivity types. The semiconductor epitaxial structure has at least one trench and comprises a first conductivity type semiconductor layer deposed on a portion of the insulating substrate, in which a bottom of the trench is beneath the first conductivity type semiconductor layer, an active layer located on a portion of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer deposed on the active layer. A first conductivity type electrode is deposed on the exposed portion of the first conductivity type semiconductor layer, and a second conductivity type electrode is deposed on a portion of the second conductivity type semiconductor layer, in which the trench covers the shortest conductive path between the first conductivity type electrode and the second conductivity type electrode, so as to block the current between the first conductivity type electrode and the second conductivity type electrode from flowing through the shortest conductive path.
摘要翻译：公开了横向电流阻断发光二极管及其制造方法。发光二极管包括绝缘衬底，半导体外延结构和不同导电类型的电极。半导体外延结构具有至少一个沟槽，并且包括位于绝缘衬底的一部分上的第一导电类型半导体层，其中沟槽的底部位于第一导电类型半导体层之下，有源层位于第一导电类型半导体层和沉积在有源层上的第二导电类型半导体层。第一导电型电极被放置在第一导电类型半导体层的暴露部分上，并且第二导电类型电极被放置在第二导电类型半导体层的一部分上，其中沟槽覆盖第一导电类型半导体层之间的最短导电路径导电型电极和第二导电型电极，以阻止第一导电型电极和第二导电型电极之间的电流流过最短导电路径。

25. 发明授权

US07541205B2 Fabrication method of transparent electrode on visible light-emitting diode 有权
标题翻译：可见光发光二极管上透明电极的制作方法
公开(公告)号：US07541205B2
公开(公告)日：2009-06-02
申请号：US11684540
申请日：2007-03-09
申请人： Tse-Liang Ying , Shi-Ming Chen
发明人： Tse-Liang Ying , Shi-Ming Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , Y10S438/956
摘要： A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a metal electrode. The metal electrode and the epitaxial structure are located on the same side of the substrate, or located respectively on the different sides of the substrate. An ohmic metal layer is formed on a surface of the epitaxial structure. The ohmic metal layer is annealed. The ohmic metal layer is removed to expose the surface of the epitaxial structure. A transparent electrode layer is formed on the exposed surface. A metal pad is formed on the transparent electrode layer.
摘要翻译：描述了在可见光发光二极管上形成透明电极的方法。提供了可见光发光二极管元件，可见光发光二极管元件具有基板，外延结构和金属电极。金属电极和外延结构位于基板的同一侧，或分别位于基板的不同侧。在外延结构的表面上形成欧姆金属层。欧姆金属层退火。去除欧姆金属层以露出外延结构的表面。在露出的表面上形成透明电极层。在透明电极层上形成金属焊盘。

26. 发明申请

US20080308834A1 LIGHT-EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20080308834A1
公开(公告)日：2008-12-18
申请号：US12200019
申请日：2008-08-28
申请人： Chang-Hsing Chu , Kui-Hui Yu , Shi-Ming Chen
发明人： Chang-Hsing Chu , Kui-Hui Yu , Shi-Ming Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L33/0079 , H01L33/20 , H01L33/641
摘要： A light-emitting diode (LED) is provided, wherein the LED comprises an epitaxial structure, a bonding layer and a composite substrate. The composite substrate comprises a patterned substrate having a pattern and a conductive material layer disposed around the patterned substrate. The bonding layer is formed on the composite substrate. The epitaxial structure is formed on the bonding layer.
摘要翻译：提供了一种发光二极管（LED），其中LED包括外延结构，结合层和复合衬底。复合衬底包括具有图案的图案化衬底和设置在图案化衬底周围的导电材料层。在复合基板上形成接合层。在结合层上形成外延结构。

27. 发明授权

US07422915B2 Light emitting diode and method for manufacturing the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07422915B2
公开(公告)日：2008-09-09
申请号：US11581575
申请日：2006-10-17
申请人： Shi-Ming Chen
发明人： Shi-Ming Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/02 , H01L33/42 , H01L33/46
摘要： A light emitting diode is disclosed. The light emitting diode comprises: a transparent substrate; a reflective layer located on a surface of the transparent substrate; a solder layer located on the other surface of the transparent substrate; a semiconductor epitaxial structure located on the solder layer, wherein the semiconductor epitaxial structure comprises a n-type contact layer, and the n-type contact layer can be a structure having a continuous flat surface, a structure having a continuous reticulate or bar surface, or a cylinder or prism structure having a discontinuous surface; and a transparent conductive layer located on the n-type contact layer of the semiconductor epitaxial structure.
摘要翻译：公开了一种发光二极管。发光二极管包括：透明基板; 位于所述透明基板的表面上的反射层; 位于所述透明基板的另一个表面上的焊料层; 位于焊料层上的半导体外延结构，其中半导体外延结构包括n型接触层，并且n型接触层可以是具有连续平坦表面的结构，具有连续网状或棒状表面的结构，或具有不连续表面的圆筒或棱镜结构; 以及位于半导体外延结构的n型接触层上的透明导电层。

28. 发明申请

US20070221927A1 Light-emitting diode and method for manufacturing the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20070221927A1
公开(公告)日：2007-09-27
申请号：US11709543
申请日：2007-02-22
申请人： Shi-Ming Chen , Mau-Phon Houng , Chang-Hsing Chu , Te-Chi Yen
发明人： Shi-Ming Chen , Mau-Phon Houng , Chang-Hsing Chu , Te-Chi Yen
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/22 , H01L33/44 , H01L2933/0091
摘要： A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and a second surface on opposite sides, and a substrate is deposed on the first surface of the illuminant epitaxial structure. A metal layer is formed on the second surface of the illuminant epitaxial structure. An anodic oxidization step is performed to oxidize the metal layer, so as to form a metal oxide layer. An etching step is performed to remove a portion of the metal oxide layer, so as to form a plurality of holes in the metal oxide layer.
摘要翻译：对发光二极管（LED）及其制造方法进行说明。 LED的制造方法包括以下步骤。提供了一种光源外延结构，其中光源外延结构具有在相对侧上的第一表面和第二表面，并且衬底被放置在光源外延结构的第一表面上。在发光体外延结构的第二表面上形成金属层。进行阳极氧化步骤以氧化金属层，以形成金属氧化物层。执行蚀刻步骤以去除金属氧化物层的一部分，以在金属氧化物层中形成多个孔。

29. 发明申请

US20070001183A1 Light-emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US20070001183A1
公开(公告)日：2007-01-04
申请号：US11259785
申请日：2005-10-27
申请人： Shi-Ming Chen
发明人： Shi-Ming Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/20 , H01L33/405
摘要： A light-emitting diode is described. The light-emitting diode comprises a sub-mount, a first conductivity type substrate deposed on the sub-mount, a reflector layer deposed between the sub-mount and the first conductivity type substrate, a first conductivity type buffer layer deposed on the first conductivity type substrate, a first conductivity type distributed Bragg reflector (DBR) layer deposed on the first conductivity type buffer layer, an illuminant epitaxial structure deposed on the first conductivity type distributed Bragg reflector layer, and a second conductivity type window layer deposed on the illuminant epitaxial structure.
摘要翻译：描述了发光二极管。发光二极管包括一个副安装座，位于子座上的第一导电型衬底，位于子座和第一导电类型衬底之间的反射层，第一导电型缓冲层，在第一导电型缓冲层上放置的第一导电型分布式布拉格反射体（DBR）层，在第一导电型分布式布拉格反射层上形成的发光体外延结构，和位于发光体外延上的第二导电型窗口层结构体。

30. 发明申请

US20060255356A1 Light-emitting diode and manufacturing method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20060255356A1
公开(公告)日：2006-11-16
申请号：US11232633
申请日：2005-09-22
申请人： Chang-Hsing Chu , Kui-Hui Yu , Shi-Ming Chen
发明人： Chang-Hsing Chu , Kui-Hui Yu , Shi-Ming Chen
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/642 , H01L33/0079 , H01L33/20 , H01L33/641
摘要： A light-emitting diode and the manufacturing method thereof are provided, wherein the light-emitting diode comprises an epitaxial structure, a bonding layer and a composite substrate. The bonding layer located over one side of the epitaxial structure is used for adhering the composite substrate to the epitaxial structure. The composite substrate comprises a patterned silicon layer penetrated through by a plurality of openssilicon, and a metal layer covering the patterned silicon layer, wherein a portion of the metal layer is filled into the opens and contacts the bonding layer.
摘要翻译：提供了一种发光二极管及其制造方法，其中发光二极管包括外延结构，接合层和复合衬底。位于外延结构一侧的结合层用于将复合衬底粘附到外延结构上。复合衬底包括穿过多个开硅硅的图案化硅层和覆盖图案化硅层的金属层，其中金属层的一部分被填充到开口中并与接合层接触。

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