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    • 21. 发明授权
    • Laminated coil
    • 层压线圈
    • US08896406B2
    • 2014-11-25
    • US13611940
    • 2012-09-12
    • Satoshi Yamamoto
    • Satoshi Yamamoto
    • H01F27/30H01F5/00H01F27/28H01F27/32
    • H01F5/00H01F27/2847H01F27/303H01F27/323
    • A laminated coil includes a plurality of circular conductive plates in the form of a flat plate, each of the circular conductive plates being laminated via an insulating material in an axis direction. The plurality of circular conductive plates each include a plurality of concentric circular arc parts having different inner diameter and outer diameter from each other, and a connection part interconnecting the plurality of circular arc parts. The plurality of circular conductive plates are arranged such that the connection parts thereof face each other and the circular arc parts thereof are juxtaposed to each other in a radial direction.
    • 层叠线圈包括平板形状的多个圆形导电板,每个圆形导电板通过绝缘材料沿轴向层压。 多个圆形导电板各自包括彼此具有不同内径和外径的多个同心圆弧部分和将多个圆弧部分互连的连接部分。 多个圆形导电板被布置成使得其连接部分彼此面对,并且其圆弧部分在径向方向上彼此并置。
    • 28. 发明申请
    • RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
    • 耐蚀组合物及其制造方法
    • US20120034563A1
    • 2012-02-09
    • US13196446
    • 2011-08-02
    • Koji ICHIKAWASatoshi Yamamoto
    • Koji ICHIKAWASatoshi Yamamoto
    • G03F7/38G03F7/039
    • G03F7/0045G03F7/0046G03F7/0397G03F7/2041G03F7/2059
    • A resist composition contains; a resin having a structural unit derived from a compound represented by the formula (a); and an acid generator represented by the formula (B1). wherein R1 represents a hydrogen atom or a methyl group; A10 represents a single bond, an optionally substituted C1 to C6 alkanediyl group or the like; W1 represents an optionally substituted C4 to C36 alicyclic hydrocarbon group; A20 in each occurrence independently represents an optionally substituted C1 to C6 aliphatic hydrocarbon group; R2 in each occurrence independently represents a C1 to C12 perfluoroalkyl group; n represents 1 or 2; Q1 and Q2 independently represent a fluorine atom or a C1 to C6 perfluoroalkyl group; Lb1 represents an optionally substituted C1 to C17 divalent aliphatic hydrocarbon group; Y represents an optionally substituted C1 to C18 aliphatic hydrocarbon group; and Z+ represents an organic cation.
    • 抗蚀剂组合物含有 具有衍生自由式(a)表示的化合物的结构单元的树脂; 和由式(B1)表示的酸发生剂。 其中R1表示氢原子或甲基; A10表示单键,可以具有取代基的C1〜C6烷二基等; W1表示任选取代的C4至C36脂环族烃基; A20每次独立地表示任选取代的C 1至C 6脂族烃基; R2各自独立地表示C1〜C12全氟烷基; n表示1或2; Q1和Q2独立地表示氟原子或C1〜C6全氟烷基; Lb1表示任选取代的C 1至C 17二价脂族烃基; Y表示任选取代的C 1至C 18脂族烃基; Z +表示有机阳离子。
    • 30. 发明申请
    • RESIST PROCESSING METHOD
    • 电阻加工方法
    • US20110189618A1
    • 2011-08-04
    • US13062180
    • 2009-09-01
    • Mitsuhiro HataNobuo AndoSatoshi YamamotoJunji ShigematsuAkira Kamabuchi
    • Mitsuhiro HataNobuo AndoSatoshi YamamotoJunji ShigematsuAkira Kamabuchi
    • G03F7/20
    • G03F7/0035G03F7/0045G03F7/0046G03F7/0397G03F7/40
    • A resist processing method comprises the steps of: (1) forming a first resist film by applying a first resist composition comprising: a resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution, and being rendered soluble in alkali aqueous solution through the action of an acid, a photo acid generator (B), a cross-linking agent (C) and an acid amplifier (D) onto a substrate and drying; (2) prebaking the first resist film; (3) exposing to the first resist film; (4) post-exposure baking of the first resist film; (5) developing with a first alkali developer to obtain a first resist pattern; (6) hard-baking the first resist pattern, (7) obtaining a second resist film by applying a second resist composition onto the first resist pattern, and drying; (8) pre-baking the second resist film; (9) exposing the second resist film; (10) post-exposure baking the second resist film; and (11) developing with a second alkali developer to obtain a second resist pattern.
    • 抗蚀剂处理方法包括以下步骤:(1)通过施加第一抗蚀剂组合物形成第一抗蚀剂膜,所述第一抗蚀剂组合物包含:具有酸不稳定基团的树脂(A),其在碱性水溶液中不溶或难溶,并且呈现 通过酸,光酸产生剂(B),交联剂(C)和酸放大器(D)的作用将其溶于碱水溶液中并干燥; (2)预烘第一抗蚀膜; (3)暴露于第一抗蚀膜; (4)第一抗蚀剂膜的曝光后烘烤; (5)用第一碱性显影剂显影以获得第一抗蚀剂图案; (6)硬烘烤第一抗蚀剂图案,(7)通过将第二抗蚀剂组合物施加到第一抗蚀剂图案上并干燥获得第二抗蚀剂膜; (8)预烘烤第二抗蚀剂膜; (9)使第二抗蚀剂膜曝光; (10)曝光后烘烤第二抗蚀膜; 和(11)用第二碱性显影剂显影以获得第二抗蚀剂图案。