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21. 发明授权

US07608162B2 Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US07608162B2
公开(公告)日：2009-10-27
申请号：US11865836
申请日：2007-10-02
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01L21/683
CPC分类号： H01J37/32192 , H01J37/321 , H01J37/32559 , H01J37/32623 , H01J37/32706
摘要： A plasma processing apparatus includes a high-frequency power source for applying bias power to an electrode on which a substrate is disposed, an insulating layer formed on a surface of the electrode, a conductive material buried within the insulating layer, a feeder line connecting the high-frequency power source and the conductive material, a variable capacitor provided in the feeder line, and a direct current power source connected to the electrode at a position between the electrode and the high-frequency power source. One portion of the insulating layer where the conductive material is buried formed on an outer part of the electrode has a thickness which is greater than a thickness of another portion of the insulating layer where the conducting material is not buried and which extends from a central part of the electrode to the one portion of the insulating layer.
摘要翻译：等离子体处理装置包括用于向其上设置基板的电极施加偏置功率的高频电源，形成在电极的表面上的绝缘层，埋在绝缘层内的导电材料，连接高频电源和导电材料，设置在馈电线路中的可变电容器，以及在电极和高频电源之间的位置处连接到电极的直流电源。绝缘层的绝缘层的一部分形成在电极的外部部分上，其厚度大于绝缘层的另一部分的厚度，其中导电材料不被埋入，并且其厚度从中心部分延伸的绝缘层的一部分。

22. 发明授权

US07288166B2 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US07288166B2
公开(公告)日：2007-10-30
申请号：US10663646
申请日：2003-09-17
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32192 , H01J37/321 , H01J37/32559 , H01J37/32623 , H01J37/32706
摘要： A plasma processing apparatus for manufacturing a semiconductor device includes an apparatus for applying bias powers to a substrate to be processed and a material adjacent to the substrate, an apparatus for adjusting a feeding impedance for the bias power applied to the material, and an apparatus for adjusting feeding impedances for the bias powers to a plurality of positions on the substrate so as to make electrons projected to the substrate from the plasma uniform within a surface of the substrate.
摘要翻译：一种用于制造半导体器件的等离子体处理设备包括：用于向待处理衬底施加偏压功率的设备和与衬底相邻的材料;用于调节施加到该材料上的偏置功率的馈电阻抗的设备;以及用于将所述偏置功率的馈送阻抗调整到所述衬底上的多个位置，以使得在所述衬底的表面内使等离子体投射到所述衬底的电子均匀。

23. 发明授权

US06491832B2 Method for processing specimens 失效
标题翻译：标本处理方法
公开(公告)号：US06491832B2
公开(公告)日：2002-12-10
申请号：US09493103
申请日：2000-01-28
申请人： Ken Yoshioka , Yoshimi Torii , Moriaki Fuyama , Tomohiro Okada , Saburou Kanai , Takehito Usui , Hitoshi Harata
发明人： Ken Yoshioka , Yoshimi Torii , Moriaki Fuyama , Tomohiro Okada , Saburou Kanai , Takehito Usui , Hitoshi Harata
IPC分类号： B44C122
CPC分类号： H01J37/32082 , C23F4/00 , G11B5/127 , G11B5/3163 , G11B5/40 , Y10T29/49075
摘要： A method of processing specimens, an apparatus therefor, and a method of manufacture of a magnetic head are provided wherein a complicated conventional post processing step for removing corrosion products is eliminated by a corrosion prevention processing for removing only a residual chlorine compound produced in the gas plasma etching. More specifically, the method is comprised of the steps of: forming a lamination film including a seed layer made of NiFe alloy, an upper magnetic pole made of NiFe alloy connected to the seed layer, a gap layer made of oxide film in close contact with the seed layer, and a shield layer made of NiFe alloy in close contact with the gap layer; plasma-etching the seed layer with a gas which contains chlorine using the upper magnetic pole as a mask; and after that removing the residual chlorine compound by a plasma post treatment with a gas plasma which contains H2O or methanol.
摘要翻译：提供一种加工试样的方法及其设备及磁头的制造方法，其中通过用于除去气体中产生的残余氯化合物的腐蚀预防处理消除了用于除去腐蚀产物的复杂的常规后处理步骤等离子体蚀刻。更具体地说，该方法包括以下步骤：形成包括由NiFe合金制成的籽晶层的层叠膜，与种子层连接的由NiFe合金构成的上磁极，与氧化膜形成的间隙层，与由种子层和由间隙层紧密接触的由NiFe合金制成的屏蔽层; 使用上磁极作为掩模，用包含氯的气体等离子体蚀刻种子层; 然后用含有H 2 O或甲醇的气体等离子体后处理除去残留的氯化合物。

24. 发明授权

US06413876B1 Method for plasma processing high-speed semiconductor circuits with increased yield 失效
标题翻译：用于等离子体处理具有增加的产量的高速半导体电路的方法
公开(公告)号：US06413876B1
公开(公告)日：2002-07-02
申请号：US09797571
申请日：2001-03-05
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： H01L21302
CPC分类号： H01J37/32706
摘要： A plasma processing apparatus processes high-speed semiconductor circuits by using plasma with an increased yield. The plasma processing apparatus has a vacuum vessel including an exhaust device, a starting material gas supplying device, an electrode for installing a workpiece (wafer) and a device for applying radio frequency power to the wafer. This apparatus converts the starting material gas to plasma inside the vacuum vessel and plasma-processes a wafer surface, wherein an insulating film is interposed between the electrode for installing the wafer and the wafer and has a conductive material at a part thereof, and the conductive material is electrically grounded through an impedance regulating circuit.
摘要翻译：等离子体处理装置通过使用具有增加的产量的等离子体来处理高速半导体电路。等离子体处理装置具有包括排气装置，原料气体供给装置，用于安装工件的电极（晶片）和用于向晶片施加射频功率的装置的真空容器。该装置将原料气体转化为真空容器内的等离子体，对晶片表面进行等离子体处理，其中绝缘膜插入在用于安装晶片的电极和晶片之间，并且其一部分具有导电材料，并且导电材料通过阻抗调节电路电接地。

25. 发明授权

US06388382B1 Plasma processing apparatus and method 有权
公开(公告)号：US06388382B1
公开(公告)日：2002-05-14
申请号：US09520831
申请日：2000-03-08
申请人： Akira Doi , Ken Yoshioka , Manabu Edamura , Hideyuki Kazumi , Saburou Kanai , Tsutomu Tetsuka , Masatsugu Arai , Kenji Maeda , Tsunehiko Tsubone
发明人： Akira Doi , Ken Yoshioka , Manabu Edamura , Hideyuki Kazumi , Saburou Kanai , Tsutomu Tetsuka , Masatsugu Arai , Kenji Maeda , Tsunehiko Tsubone
IPC分类号： H05B3700
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/321
摘要： The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.

26. 发明申请

US20080023145A1 PLASMA PROCESSING APPARATUS AND METHOD 失效
标题翻译：等离子体加工设备和方法
公开(公告)号：US20080023145A1
公开(公告)日：2008-01-31
申请号：US11865836
申请日：2007-10-02
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： H01L21/306
CPC分类号： H01J37/32192 , H01J37/321 , H01J37/32559 , H01J37/32623 , H01J37/32706
摘要： A plasma processing apparatus includes a high-frequency power source for applying bias power to an electrode on which a substrate is disposed, an insulating layer formed on a surface of the electrode, a conductive material buried within the insulating layer, a feeder line connecting the high-frequency power source and the conductive material, a variable capacitor provided in the feeder line, and a direct current power source connected to the electrode at a position between the electrode and the high-frequency power source. One portion of the insulating layer where the conductive material is buried formed on an outer part of the electrode has a thickness which is greater than a thickness of another portion of the insulating layer where the conducting material is not buried and which extends from a central part of the electrode to the one portion of the insulating layer.
摘要翻译：等离子体处理装置包括用于向其上设置基板的电极施加偏置功率的高频电源，形成在电极的表面上的绝缘层，埋在绝缘层内的导电材料，连接高频电源和导电材料，设置在馈电线路中的可变电容器，以及在电极和高频电源之间的位置处连接到电极的直流电源。绝缘层的绝缘层的一部分形成在电极的外部部分上，其厚度大于绝缘层的另一部分的厚度，其中导电材料不被埋入，并且其厚度从中心部分延伸的绝缘层的一部分。

27. 发明授权

US06759338B2 Plasma processing apparatus and method 失效
标题翻译：等离子体处理装置及方法
公开(公告)号：US06759338B2
公开(公告)日：2004-07-06
申请号：US09795487
申请日：2001-03-01
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： H01L21302
CPC分类号： H01J37/32192 , H01J37/321 , H01J37/32559 , H01J37/32623 , H01J37/32706
摘要： A plasma processing apparatus and a plasma processing method for processing a wafer of a large diameter to produce a high speed semiconductor circuit at a high yield are provided. A thickness of an insulating film formed on a surface of an electrode opposing to a substrate to be processed is locally changed, an electrode is provided in the insulating film and a bypassed bias current is supplied to the electrode. An electrode is provided in an insulating film on a surface of the electrode opposing to a material adjacent to the substrate to be processed and a bypassed bias current is supplied to the electrode.
摘要翻译：提供了一种等离子体处理装置和等离子体处理方法，用于处理大直径的晶片以高产率生产高速半导体电路。在与被处理基板相对的电极的表面上形成的绝缘膜的厚度局部变化，在绝缘膜中设置电极，向电极提供旁路偏置电流。在电极的表面上设置有与被处理基板相邻的材料的绝缘膜上的电极，向电极供给旁路偏置电流。

28. 发明授权

US06756737B2 Plasma processing apparatus and method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US06756737B2
公开(公告)日：2004-06-29
申请号：US10143790
申请日：2002-05-14
申请人： Akira Doi , Ken Yoshioka , Manabu Edamura , Hideyuki Kazumi , Saburou Kanai , Tsutomu Tetsuka , Masatsugu Arai , Kenji Maeda , Tsunehiko Tsubone
发明人： Akira Doi , Ken Yoshioka , Manabu Edamura , Hideyuki Kazumi , Saburou Kanai , Tsutomu Tetsuka , Masatsugu Arai , Kenji Maeda , Tsunehiko Tsubone
IPC分类号： H01J724
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/321
摘要： The main purpose of the present invention is to suppress deposition of byproducts on an inner wall of a vacuum chamber during wafer processing using plasma generated by an inductive coupling antenna and an electrostatic capacitive coupling antenna which are connected in series at a connection point. Deposition of byproducts on the inner wall of the vacuum chamber can be suppressed by grounding the connection point of the inductive coupling antenna and the electrostatic capacitive coupling antenna via a variable-impedance load and varying an impedance of the variable-impedance load, thereby controlling a ratio of plasma produced in the chamber by electrostatic capacitive coupling discharge.
摘要翻译：本发明的主要目的是在使用在连接点处串联连接的电感耦合天线和静电电容耦合天线产生的等离子体的晶片处理期间，抑制副产物在真空室的内壁上的沉积。通过可变阻抗负载接地电感耦合天线和静电电容耦合天线的连接点并改变可变阻抗负载的阻抗，可以抑制真空室内壁上的副产物的沉积，从而控制通过静电电容耦合放电在室内产生的等离子体的比例。

29. 发明授权

US06649021B2 Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield 失效
公开(公告)号：US06649021B2
公开(公告)日：2003-11-18
申请号：US09908844
申请日：2001-07-20
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： H01L2100
CPC分类号： H01J37/32706
摘要： A plasma processing apparatus processes high-speed semiconductor circuits by using plasma with an increased yield. The plasma processing apparatus has a vacuum vessel including an exhaust device, a starting material gas supplying device, an electrode for installing a workpiece (wafer) and a device for applying radio frequency power to the wafer. This apparatus converts the starting material gas to plasma inside the vacuum vessel and plasma-processes a wafer surface, wherein an insulating film is interposed between the electrode for installing the wafer and the wafer and has a conductive material at a part thereof, and the conductive material is electrically grounded through an impedance regulating circuit.

30. 发明授权

US06914207B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US06914207B2
公开(公告)日：2005-07-05
申请号：US10688991
申请日：2003-10-21
申请人： Tadayoshi Kawaguchi , Tadamitsu Kanekiyo , Akihiko Mitsuda , Takeshi Shimada , Saburou Kanai
发明人： Tadayoshi Kawaguchi , Tadamitsu Kanekiyo , Akihiko Mitsuda , Takeshi Shimada , Saburou Kanai
IPC分类号： H01J37/32 , B23K9/00
CPC分类号： H01J37/32862 , H01J37/321
摘要： In a plasma processing method which comprises supplying a processing gas to a vacuum vessel forming a plasma production part, producing a plasma using an antenna and a Faraday shield which are provided at outer periphery of the vacuum vessel and to which a high-frequency electric power can be applied, and carrying out the processing, a voltage of at least 500 V is applied to the Faraday shield and a sample which is disposed in the vacuum vessel and which is a nonvolatile material as a material to be etched is etched.
摘要翻译：在等离子体处理方法中，其包括向形成等离子体生产部件的真空容器供给处理气体，使用设置在真空容器的外周的天线和法拉第屏蔽来制造等离子体，并且将高频电力并且进行处理时，向法拉第屏蔽件施加至少500V的电压，并且蚀刻设置在真空容器中并且作为待蚀刻材料的非挥发性材料的样品。

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