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21. 发明授权

US4989954A Projection type liquid cyrstal display device 失效
标题翻译：投影式液晶显示装置
公开(公告)号：US4989954A
公开(公告)日：1991-02-05
申请号：US254244
申请日：1988-10-06
申请人： Kazuo Yokoyama , Junichi Asada , Hiroshi Watanabe , Shoichi Ishihara , Sadayoshi Hotta , Fumiko Yokotani , Yoshihiro Matsuo
发明人： Kazuo Yokoyama , Junichi Asada , Hiroshi Watanabe , Shoichi Ishihara , Sadayoshi Hotta , Fumiko Yokotani , Yoshihiro Matsuo
IPC分类号： G02F1/1335 , H04N9/31
CPC分类号： H04N9/3102 , G02F2001/133531
摘要： A projection type liquid crystal display device for transmitting three color light beams of RGB through three TN type liquid crystal panels and projecting the transmitted light beams optimizes the RGB transmission characteristics by changing the crossing angles of the polarization axes of a polarizer and an analyzer with respect to the orientation directions of the respective RGB TN cells in specified directions, and also a projection type liquid crystal display device for transmitting a light beam through a TN type liquid crystal panel and projecting the transmitted light beam effects temperature-compensation of the transmission characteristics of the liquid crystal panels by controlling the crossing angle of the polarization axes of a polarizer and an analyzer. Both projection type liquid crystal display devices are relatively simple in the construction, are able to optimize the transmission characteristics of the liquid crystal panels, and have excellent properties in the contrast and in the color reproducibility.

22. 发明授权

US08450142B2 Organic thin film transistors 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US08450142B2
公开(公告)日：2013-05-28
申请号：US12532629
申请日：2008-04-03
申请人： Sadayoshi Hotta , Jeremy Henley Burroughes , Gregory Lewis Whiting
发明人： Sadayoshi Hotta , Jeremy Henley Burroughes , Gregory Lewis Whiting
IPC分类号： H01L51/10 , H01L51/40 , H01L21/336 , H01L29/786
CPC分类号： H01L51/0541 , H01L51/0005
摘要： An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode defining a channel; a layer of insulating material disposed over the source and drain electrodes; a layer of organic semi-conductive material extending across the channel; a layer of dielectric material; and a gate electrode disposed over the layer of dielectric material.
摘要翻译：一种有机薄膜晶体管，包括：基板; 源电极和限定沟道的漏电极; 设置在源极和漏极上的绝缘材料层; 延伸穿过通道的有机半导体材料层; 介电材料层; 以及设置在电介质材料层上的栅电极。

23. 发明授权

US08436355B2 Thin-film transistor, manufacturing method therefor, and electronic device using a thin-film transistor 有权
标题翻译：薄膜晶体管及其制造方法以及使用薄膜晶体管的电子器件
公开(公告)号：US08436355B2
公开(公告)日：2013-05-07
申请号：US12742137
申请日：2008-11-14
申请人： Takaaki Ukeda , Tohru Saitoh , Kazunori Komori , Sadayoshi Hotta
发明人： Takaaki Ukeda , Tohru Saitoh , Kazunori Komori , Sadayoshi Hotta
IPC分类号： H01L33/00
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/66757
摘要： Disclosed is a method that includes: forming a gate electrode on a substrate, then forming an insulation layer so as to completely cover the gate electrode, thereafter forming a semiconductor layer on the insulation layer, and then forming a crystallization-inducing metal layer on the semiconductor layer; removing the part of at least the crystallization-inducing metal layer that is over a channel region of the semiconductor layer; forming source and drain electrodes at a location which is over source and drain regions respectively located at opposite sides with respect to the channel region of the semiconductor layer and is above the crystallization-inducing metal layer; and heating the crystallization-inducing metal layer so as to form a silicide layer of a crystallization-inducing metal.
摘要翻译：公开了一种方法，其包括：在基板上形成栅电极，然后形成绝缘层，以完全覆盖栅电极，然后在绝缘层上形成半导体层，然后在其上形成结晶诱导金属层半导体层; 去除所述半导体层的沟道区域上的至少所述结晶诱导金属层的一部分; 在源极和漏极区域分别位于相对于半导体层的沟道区的相对侧并位于结晶诱导金属层之上的位置处形成源极和漏极; 并加热结晶诱导金属层，以形成结晶诱导金属的硅化物层。

24. 发明授权

US08017940B2 Organic transistor, method of forming organic transistor and organic EL display with organic transistor 有权
标题翻译：有机晶体管，有机晶体管的形成方法和有机晶体管的有机EL显示
公开(公告)号：US08017940B2
公开(公告)日：2011-09-13
申请号：US12126363
申请日：2008-05-23
申请人： Shuhei Nakatani , Sadayoshi Hotta , Hidehiro Yoshida
发明人： Shuhei Nakatani , Sadayoshi Hotta , Hidehiro Yoshida
IPC分类号： H01L51/00
CPC分类号： H01L51/0541 , H01L27/283 , H01L51/0021
摘要： The present invention is directed to manufacturing an organic transistor with an organic semiconductor film formed by a coating method, without involving a process of forming a rib for forming the organic semiconductor film. To be more specific, the organic transistor of the present invention includes: (1) a source electrode part and a drain electrode part which are formed on a substrate; (2) rib selectively formed on part of the source electrode part and the drain electrode part; (3) an organic semiconductor film placed in the region defined by the ribs and connecting the source electrode part and the drain electrode part; and (4) a gate electrode formed on the organic semiconductor film through a gate insulating film. The organic transistor of the present invention is characterized in that there is a gap between the rib formed on the source electrode part and the rib formed on the drain electrode part.
摘要翻译：本发明涉及制造具有通过涂布方法形成的有机半导体膜的有机晶体管，而不涉及形成用于形成有机半导体膜的肋的工艺。更具体地说，本发明的有机晶体管包括：（1）形成在基板上的源电极部和漏电极部; （2）选择性地形成在源电极部分和漏电极部分的一部分上的肋; （3）有机半导体膜，其放置在由所述肋形成的区域中，并连接所述源电极部和所述漏电极部; 和（4）通过栅极绝缘膜形成在有机半导体膜上的栅电极。本发明的有机晶体管的特征在于，在源电极部分上形成的肋与形成在漏电极部分上的肋之间存在间隙。

25. 发明授权

US07867813B2 Organic thin film transistors 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US07867813B2
公开(公告)日：2011-01-11
申请号：US12143676
申请日：2008-06-20
申请人： Jonathan J. Halls , Craig E. Murphy , Gregory Whiting , Sadayoshi Hotta
发明人： Jonathan J. Halls , Craig E. Murphy , Gregory Whiting , Sadayoshi Hotta
IPC分类号： H01L51/40
CPC分类号： H01L51/0516 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.
摘要翻译：一种形成有机薄膜晶体管的方法，该晶体管包括其间具有沟道区的源极和漏极，栅电极，设置在源电极和漏电极之间的电介质层和栅电极，以及设置在至少沟道区中的有机半导体在所述源极和漏极之间，所述方法包括：在所述有机半导体沉积之前，在所述沟道区中的结晶部位的表面接种; 以及将有机半导体沉积到接种的表面上，由此有机半导体在结晶位置处结晶，形成沟道区中的晶畴。

26. 发明申请

US20100051922A1 Organic Thin Film Transistors 有权
标题翻译：有机薄膜晶体管
公开(公告)号：US20100051922A1
公开(公告)日：2010-03-04
申请号：US12532629
申请日：2008-04-03
申请人： Sadayoshi Hotta , Jeremy Henley Burroughes , Gregory Lewis Whiting
发明人： Sadayoshi Hotta , Jeremy Henley Burroughes , Gregory Lewis Whiting
IPC分类号： H01L51/10 , H01L51/40 , H01L21/336 , H01L29/786
CPC分类号： H01L51/0541 , H01L51/0005
摘要： An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode defining a channel; a layer of insulating material disposed over the source and drain electrodes; a layer of organic semi-conductive material extending across the channel; a layer of dielectric material; and a gate electrode disposed over the layer of dielectric material.
摘要翻译：一种有机薄膜晶体管，包括：基板; 源电极和限定沟道的漏电极; 设置在源极和漏极上的绝缘材料层; 延伸穿过通道的有机半导体材料层; 介电材料层; 以及设置在电介质材料层上的栅电极。

27. 发明授权

US06781659B2 Liquid crystal display device, pixels repair method thereof, and drive method thereof 有权
标题翻译：液晶显示装置及其像素修复方法及其驱动方法
公开(公告)号：US06781659B2
公开(公告)日：2004-08-24
申请号：US09958677
申请日：2001-10-12
申请人： Akinori Shiota , Hiroyuki Yamakita , Katsuhiko Kumagawa , Sadayoshi Hotta , Yoneharu Takubo
发明人： Akinori Shiota , Hiroyuki Yamakita , Katsuhiko Kumagawa , Sadayoshi Hotta , Yoneharu Takubo
IPC分类号： G02F11345
CPC分类号： G02F1/134363 , G02F1/136213 , G02F1/136259
摘要： A liquid crystal display device, wherein liquid crystal is driven by an electric field that is parallel to a substrate, includes a plurality of gate lines (Xm−1), (Xm) and a plurality of data lines (Yn−1), (Yn) provided such that the data lines intersect with the plurality of gate lines, switching elements (13) connected to the gates lines (Xm−1) and the data lines (Yn−1), pixel electrodes (11) connected to the data lines (Yn−1) via the switching elements (13), and opposing electrodes (12) forming pairs with the pixel electrodes (11), wherein a plurality of storage capacities (14a), (14b) for maintaining a charge of the pixel electrodes (11) are provided in a distributed arrangement associated with points where the plurality of gate lines (Xm−1), (Xm) and the plurality of data lines (Yn−1), (Yn) intersect.
摘要翻译：一种液晶显示装置，其中液晶由与基板平行的电场驱动，包括多条栅极线（Xm-1），（Xm）和多条数据线（Yn-1），（ Yn），使得数据线与多条栅极线相交，连接到栅极线（Xm-1）和数据线（Yn-1）的开关元件（13），连接到数据的像素电极（11）经由开关元件（13）的线（Yn-1）和与像素电极（11）成对的对置电极（12），其中，用于维持像素的电荷的多个存储容量（14a），（14b）电极（11）设置成与多条栅极线（Xm-1），（Xm）和多条数据线（Yn-1），（Yn）相交的点相关联的分布布置。

28. 发明授权

US4369392A Oxide-coated cathode and method of producing the same 失效
标题翻译：氧化物涂覆的阴极及其制造方法
公开(公告)号：US4369392A
公开(公告)日：1983-01-18
申请号：US187701
申请日：1980-09-16
申请人： Sadayoshi Hotta , Masanori Watanabe
发明人： Sadayoshi Hotta , Masanori Watanabe
IPC分类号： H01J1/142 , H01J1/14
CPC分类号： H01J1/142
摘要： An oxide-coated cathode used for the electron tubes such as cathode ray tubes and camera tubes, comprising as the base a sintered product principally composed of an alkaline earth metal compound and a high-melting-point metal and having high heat conductivity and low specific resistance, said sintered product being either used singly or layered on a high-melting-point metal body containing a reducible element or elements as impurity, and an oxide cathode material coated on said base, and a method of producing such oxide-coated cathode.
摘要翻译：用于阴极射线管和照相机管等电子管的氧化物被覆阴极，其特征在于，以碱土金属化合物和高熔点金属为主要成分，具有高导热性，低特异性的烧结体电阻，所述烧结产品单独使用或分层在含有可还原元素或杂质的元素的高熔点金属体上，以及涂覆在所述基底上的氧化物阴极材料，以及制备这种氧化物涂覆的阴极的方法。

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