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21. 发明授权

US07286329B1 GMR sensor with shallow contiguous junction and bias layers aligned with free sensor layers 失效
标题翻译： GMR传感器具有与自由传感器层对准的浅连续结和偏置层
公开(公告)号：US07286329B1
公开(公告)日：2007-10-23
申请号：US10788656
申请日：2004-02-27
申请人： Yingjian Chen , Wei Zhang , Mohamad T. Krounbi , Satoru Araki , Jinqiu Zhang
发明人： Yingjian Chen , Wei Zhang , Mohamad T. Krounbi , Satoru Araki , Jinqiu Zhang
IPC分类号： G11B5/39
CPC分类号： G01R31/318357 , G11B5/3932
摘要： A magnetic sensor is disclosed having a shallow contiguous junction. Such a sensor is can greatly increase yield for mass-produced heads, especially for large wafers. The magnetic bias layers can be aligned with a free layer of the sensor, improving performance. Milling may be terminated prior to penetration of an antiferromagnetic layer, so that for example the antiferromagnetic layer may extend significantly beyond the free and pinned layers of the sensor.
摘要翻译：公开了一种具有浅连续结的磁传感器。这种传感器可以大大提高批量生产头部的产量，特别是对于大型晶片。磁偏置层可以与传感器的自由层对准，从而提高性能。铣削可以在穿透反铁磁层之前终止，使得例如反铁磁层可以显着地延伸超过传感器的自由和固定层。

22. 发明申请

US20070177305A1 Pad slider design for on-slider ELGs 有权
标题翻译：滑块ELG滑块设计
公开(公告)号：US20070177305A1
公开(公告)日：2007-08-02
申请号：US11340888
申请日：2006-01-27
申请人： Satoru Araki , Alexander Driskill-Smith , David Seagle , Xiao Wu
发明人： Satoru Araki , Alexander Driskill-Smith , David Seagle , Xiao Wu
IPC分类号： G11B5/60
CPC分类号： G11B5/3173 , G11B5/3166 , G11B5/3169 , G11B5/6005
摘要： One embodiment of the present invention provides a slider including a slider body, a magnetic reader disposed on the slider body, a magnetic writer disposed on the slider body, and an electronic lapping guide disposed on the slider body. The slider also includes a first row of contact pads disposed on the slider body and coupled to the magnetic reader and the magnetic writer and a second row of contact pads disposed on the slider body and coupled to the electronic lapping guide. The electronic lapping guide may be electrically isolated from the magnetic reader and magnetic writer.
摘要翻译：本发明的一个实施例提供了一种滑块，其包括滑块体，设置在滑块主体上的磁读取器，设置在滑块体上的磁记录器，以及设置在滑块体上的电子研磨导轨。滑块还包括设置在滑块主体上并耦合到磁性读取器和磁性写入器的第一排接触焊盘，以及布置在滑块主体上并耦合到电子研磨导轨的第二排接触焊盘。电子研磨导轨可以与磁性读写器和磁性写入器电隔离。

23. 发明申请

US20060256482A1 Method to fabricate side shields for a magnetic sensor 失效
公开(公告)号：US20060256482A1
公开(公告)日：2006-11-16
申请号：US11126508
申请日：2005-05-10
申请人： Satoru Araki , Robert Beach , Marie-Claire Cyrille , Wipul Jayasekara , Quang Le , Jui-Lung Li , David Seagle , Howard Zolla
发明人： Satoru Araki , Robert Beach , Marie-Claire Cyrille , Wipul Jayasekara , Quang Le , Jui-Lung Li , David Seagle , Howard Zolla
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , G11B5/112 , G11B5/3169 , G11B5/3906 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046
摘要： A method for fabricating magnetic side shields for an MR sensor of a magnetic head. Following the deposition of MR sensor layers, a first DLC layer is deposited. Milling mask layers are then deposited, and outer portions of the milling mask layers are removed such that a remaining central portion of the milling mask layers is formed having straight sidewalls and no undercuts. Outer portions of the sensor layers are then removed such that a relatively thick remaining central portion of the milling mask resides above the remaining sensor layers. A thin electrical insulation layer is deposited, followed by the deposition of magnetic side shields. A second DLC layer is deposited and the remaining mask layers are then removed utilizing a chemical mechanical polishing (CMP) liftoff step. Thereafter, the first DLC layer and the second DLC layer are removed and a second magnetic shield layer is then fabricated thereabove.

24. 发明授权

US06680827B2 Dual spin valve CPP MR with flux guide between free layers thereof 失效
标题翻译：双自旋阀CPP MR，其自由层之间具有通量引导
公开(公告)号：US06680827B2
公开(公告)日：2004-01-20
申请号：US09729719
申请日：2000-12-06
申请人： Shuxiang Li , Satoru Araki
发明人： Shuxiang Li , Satoru Araki
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B2005/3996
摘要： A current perpendicular-to-the-plane magnetoresistance (CPP-MR) device includes a first magnetic shield, a second magnetic shield, and a spin valve structure. The first and second magnetic shields are formed of an electrically conductive and magnetically shielding material. A read gap is defined between the first and second magnetic shields, and the spin valve structure is disposed between the first and second magnetic shields. The spin valve structure is electrically connected and magnetically separated from the first and second magnetic shields such that the first and second magnetic shields act as electrical contact leads.
摘要翻译：电流垂直于平面的磁阻（CPP-MR）器件包括第一磁屏蔽，第二磁屏蔽和自旋阀结构。第一和第二磁屏蔽由导电和磁屏蔽材料形成。在第一和第二磁屏蔽之间限定读取间隙，并且自旋阀结构设置在第一和第二磁屏蔽之间。自旋阀结构与第一和第二磁屏蔽电连接并磁分离，使得第一和第二磁屏蔽件用作电接触引线。

25. 发明授权

US06473257B1 Method and apparatus for measuring characteristics of ferromagnetic tunnel magnetoresistance effect element, and hard disk drive 有权
标题翻译：用于测量铁磁隧道磁阻效应元件和硬盘驱动器特性的方法和装置
公开(公告)号：US06473257B1
公开(公告)日：2002-10-29
申请号：US09542996
申请日：2000-04-04
申请人： Koji Shimazawa , Satoru Araki , Haruyuki Morita
发明人： Koji Shimazawa , Satoru Araki , Haruyuki Morita
IPC分类号： G11B503
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/098 , G11B5/012 , G11B5/3909 , G11B5/455
摘要： The present invention relates to a method for measuring characteristics of a tunnel magnetoresistance effect element having a tunnel multilayered film comprising a tunnel barrier layer and a first and a second ferromagnetic layer formed to sandwich the tunnel barrier layer therebetween. This method comprises the steps of setting an initial current value I0 which does not destroy the element to be measured, measuring, using the current value I0, a first resistance value R1 as an approximate resistance value of the element, defining, based on the first resistance value R1 and a voltage value Vs which is a measurement standard for the element, an inspection current value Is (Is=Vs/R1), and measuring characteristics of the element using the inspection current value Is. Therefore, “without damaging or destroying elements” and “in an effective way”, the characteristics of the element can be measured.
摘要翻译：本发明涉及一种用于测量具有隧道多层膜的隧道磁阻效应元件的特性的方法，所述隧道多层膜包括隧道势垒层和形成为将隧道势垒层夹在其间的第一和第二铁磁层。该方法包括以下步骤：使用电流值I0来测量不破坏待测元素的初始电流值I0，将第一电阻值R1设定为元件的近似电阻值，基于第一电阻值R1和作为元件的测量标准的电压值Vs，检查电流值Is（Is = Vs / R1）以及使用检查电流值Is的元件的测量特性。因此，“不破坏或破坏元素”和“有效地”，可以衡量元素的特征。

26. 发明授权

US06469879B1 Magneto-resistive tunnel junction head with biasing elements abutting free layer extended portions 失效
标题翻译：磁阻隧道连接头，其偏置元件抵靠自由层延伸部分
公开(公告)号：US06469879B1
公开(公告)日：2002-10-22
申请号：US09517455
申请日：2000-03-02
申请人： Olivier Redon , Koji Shimazawa , Noriaki Kasahara , Satoru Araki
发明人： Olivier Redon , Koji Shimazawa , Noriaki Kasahara , Satoru Araki
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3932
摘要： Magneto-resistive tunnel junction head having a tunnel multilayered film with a tunnel barrier layer, a ferromagnetic free layer, and a ferromagnetic pinned layer formed as a sandwich. A magnetic field is applied to the free layer in a longitudinal direction by biasing elements at opposite ends, and a length of the free layer is greater than a length of the pinned layer such that the free layer has portions extending beyond opposite ends of the pinned layer. A head output suitable for ultra-high density recording can be obtained with less reduction of TMR ratio. Selection of the biasing element is flexible. A hard material and also an antiferromagnetic material can be selected and the biasing elements can be disposed on either an upper or lower side of the free layer at a desired distance.
摘要翻译：具有隧道势垒层的隧道多层膜，铁磁自由层和形成为三明治形成的铁磁性钉扎层的磁阻隧道结头。磁场通过在相对端偏置元件而沿纵向方向施加到自由层，并且自由层的长度大于被钉扎层的长度，使得自由层具有延伸超过固定的相对端的部分层。可以以较少的TMR比降低获得适合于超高密度记录的头部输出。偏置元件的选择是灵活的。可以选择硬质材料和反铁磁材料，并且偏置元件可以以期望的距离设置在自由层的上侧或下侧。

27. 发明授权

US06294911B1 Measurement method of magnetization direction of magnetoresistive effect devices and measurement apparatus based on the method of TDK corporation 有权
标题翻译：基于该方法的磁阻效应器件和测量装置的磁化方向的测量方法
公开(公告)号：US06294911B1
公开(公告)日：2001-09-25
申请号：US09263778
申请日：1999-03-05
申请人： Koji Shimazawa , Nozomu Hachisuka , Manabu Ohta , Tetsuro Sasaki , Satoru Araki
发明人： Koji Shimazawa , Nozomu Hachisuka , Manabu Ohta , Tetsuro Sasaki , Satoru Araki
IPC分类号： G01R3309
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/455 , G11B2005/0016
摘要： A method of measuring magnetization direction of a MR device, includes a first step of obtaining both maximum electrical resistance values under positive and negative applied measurement magnetic fields onto the MR device biased by anti-ferromagnetic material, a second step of relatively rotating a basic axis of the MR device against a direction of the applied measurement magnetic field until both the maximum resistance values become comparatively the same, and a third step of obtaining a relative rotation angle between the basic axis of the MR device and the direction of the applied measurement magnetic field.
摘要翻译：一种测量MR器件的磁化方向的方法包括：在由反铁磁材料偏置的MR器件上的正和负施加的测量磁场下获得最大电阻值的第一步骤，相对旋转基本轴线的第二步骤的MR装置相对于所施加的测量磁场的方向，直到最大电阻值变得相对相同，并且获得MR装置的基本轴线与施加的测量磁体的方向之间的相对旋转角度的第三步骤领域。

28. 发明授权

US06221518B1 Magnetoresistance effect film and magnetoresistance effect type head 有权
标题翻译：磁阻效应膜和磁阻效应型头
公开(公告)号：US06221518B1
公开(公告)日：2001-04-24
申请号：US09289939
申请日：1999-04-13
申请人： Satoru Araki , Haruyuki Morita
发明人： Satoru Araki , Haruyuki Morita
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B2005/3996 , H01F10/123 , H01F10/3268 , H01F41/302 , Y10S428/90 , Y10T428/1121
摘要： In a spin valve type magnetoresistance effect film comprising a multilayered film including a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of the non-magnetic metal layer, and an antiferromagnetic layer which is formed on a surface of the ferromagnetic layer remote from the other surface thereof abutting the non-magnetic metal layer so as to pin a direction of magnetization of the ferromagnetic layer, the antiferromagnetic layer is made of a compound containing Mn and having a CuAu-I type regular crystal structure and is crystallized by laser irradiation to show antiferromagnetism. Thus, an excellent effect is achieved that mutual diffusion in the laminate film is very small and the MR ratio is very large. Further, when a spin valve head is formed, an excellent effect is achieved that the sensitivity is high and the output is large. Further, the laminate film forming the spin valve film can be reduced in thickness so that a product can be more compact. Moreover, an excellent effect is achieved that the energy loss is small and the productivity is high.
摘要翻译：在包括非磁性金属层的多层膜的自旋阀型磁电阻效应膜中，形成在非磁性金属层的一个表面上的铁磁层，形成在非磁性金属的另一个表面上的软磁性层层和反铁磁层，其形成在铁磁层的远离其另一表面的表面上，以抵抗非磁性金属层以引导铁磁层的磁化方向，反铁磁层由化合物含有Mn并具有CuAu-I型规则晶体结构，并通过激光照射结晶显示出反铁磁性。因此，实现了层压膜中相互扩散非常小并且MR比非常大的优异效果。此外，当形成自旋阀头时，实现了灵敏度高并且输出大的优异效果。此外，形成自旋阀膜的层压膜的厚度可以减小，使得产品可以更紧凑。此外，实现能量损失小，生产率高的优异效果。

29. 发明授权

US06181535B2 Magnetoresistance effect head obtained using a pulse magnetic field process 失效
标题翻译：使用脉冲磁场工艺获得的磁阻效应头
公开(公告)号：US06181535B2
公开(公告)日：2001-01-30
申请号：US09260722
申请日：1999-03-02
申请人： Satoru Araki , Haruyuki Morita
发明人： Satoru Araki , Haruyuki Morita
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/0008 , G11B2005/3996 , Y10T428/1121
摘要： A magnetoresistance effect type head of the present invention has a spin valve type magnetoresistance effect film. A pulse magnetic field process is carried out wherein a pulse magnetic field of the pulse magnetic field intensity I of 5 kOe to 40 kOe is intermittently applied to the magnetoresistance effect film upon executing a so-called magnetization orthogonalization process. As a result, there can be obtained the magnetoresistance effect type head, wherein the orthogonalization of magnetization of a soft magnetic layer and a ferromagnetic layer is achieved under a very low temperature condition, i.e. without heating up to a blocking temperature Tb, and over a short time, so that deterioration of a magnetic characteristic is quite small, a head characteristic is stable and a head output is large.
摘要翻译：本发明的磁阻效应型头具有自旋阀型磁电阻效应膜。执行脉冲磁场处理，其中在执行所谓的磁化正交化处理时，脉冲磁场强度I为5kOe至40kOe的脉冲磁场被间歇地施加到磁阻效应膜。结果，可以获得磁阻效应型磁头，其中软磁性层和铁磁层的磁化正交化在非常低的温度条件下实现，即不加热到阻挡温度Tb，并且在短时间，磁特性劣化相当小，头特性稳定，头输出大。

30. 发明授权

US5946361A Viterbi decoding method and circuit with accelerated back-tracing and efficient path metric calculation 失效
标题翻译：维特比解码方法和具有加速回溯和有效路径度量计算的电路
公开(公告)号：US5946361A
公开(公告)日：1999-08-31
申请号：US489933
申请日：1995-06-13
申请人： Satoru Araki , Yoshihito Shimazaki , Shigeru Ono
发明人： Satoru Araki , Yoshihito Shimazaki , Shigeru Ono
IPC分类号： H03M13/23 , G06F11/10 , H03M13/41 , H04L27/06 , H04Q7/20
CPC分类号： H03M13/4169
摘要： In a first aspect of the invention, a Viterbi decoding circuit stores comparison result bits in a bit-accessible path memory unit. A back-trace is performed by setting a state value in a shift register, then shifting comparison result bits from the path memory unit into the shift register. A certain number of bits at the shift-in end of this register are supplied as read address bits to the path memory unit. In a second aspect of the invention, a Viterbi decoding circuit has selectors that first select old path metric values and branch metric values, which are added or subtracted to produce candidate path metric values, then select the candidate path metric values, which are subtracted to produce a comparison result bit representing the sign of their difference. These additions and subtractions are performed by the same arithmetic unit.
摘要翻译：在本发明的第一方面，维特比解码电路将比较结果位存储在位可访问路径存储单元中。通过设置移位寄存器中的状态值，然后将比较结果位从路径存储器单元移位到移位寄存器来执行后跟踪。该寄存器的移入端的一定数量的位作为读地址位提供给路径存储单元。在本发明的第二方面，维特比解码电路具有选择器，其首先选择旧路径量度值和分支量度值，其被相加或相减以产生候选路径度量值，然后选择候选路径量度值，其被减去产生一个表示它们差异的符号的比较结果位。这些加法和减法由相同的算术单元执行。

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