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21. 发明授权

US6005291A Semiconductor device and process for production thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US6005291A
公开(公告)日：1999-12-21
申请号：US138011
申请日：1998-08-21
申请人： Kenichi Koyanagi , Kunihiro Fujii , Tatsuya Usami , Koji Kishimoto
发明人： Kenichi Koyanagi , Kunihiro Fujii , Tatsuya Usami , Koji Kishimoto
IPC分类号： H01L21/28 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , H01L23/532 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/53223 , H01L23/5226 , H01L23/5329 , H01L2924/0002
摘要： A semiconductor device comprising an insulating film at least partially containing a fluorine-containing film, formed above a semiconductor substrate, and a titanium nitride film formed on the insulating film. The above titanium film functions as a barrier metal film for barriering the diffusion of fluorine (F) atoms.
摘要翻译：一种半导体器件，包括至少部分含有形成在半导体衬底上的含氟膜的绝缘膜和形成在绝缘膜上的氮化钛膜的半导体器件。上述钛膜用作阻挡氟（F）原子扩散的阻挡金属膜。

22. 发明授权

US08606400B2 Robot system 有权
标题翻译：机器人系统
公开(公告)号：US08606400B2
公开(公告)日：2013-12-10
申请号：US13354723
申请日：2012-01-20
申请人： Tetsuro Izumi , Kenichi Koyanagi , Kenji Matsukuma , Yukio Hashiguchi
发明人： Tetsuro Izumi , Kenichi Koyanagi , Kenji Matsukuma , Yukio Hashiguchi
IPC分类号： G05B19/418
CPC分类号： G05B19/4182 , B25J9/1697 , G05B2219/37555 , G05B2219/39102 , G05B2219/40007 , Y02P90/083
摘要： A robot system according to embodiments includes a conveying device, a plurality of robots, an image capturing device, a workpiece detecting device, and a control device. The control device includes an operation instruction unit and an allocating unit. The operation instruction unit generates an operation instruction for performing a holding operation on workpieces on the basis of the detection result of the workpiece detecting device and transmits the operation instruction to the robots. The allocating unit determines which of the plurality of robots to which the operation instruction unit transmits the operation instruction on the basis of conveying situations of the workpieces obtained from the detection result of the workpiece detecting device.
摘要翻译：根据实施例的机器人系统包括输送装置，多个机器人，图像捕获装置，工件检测装置和控制装置。控制装置包括操作指令单元和分配单元。操作指示单元基于工件检测装置的检测结果生成用于对工件执行保持操作的操作指令，并将操作指令发送给机器人。分配单元基于从工件检测装置的检测结果获得的工件的传送情况，确定操作指令单元发送操作指令的多个机器人中的哪一个。

23. 发明授权

US07576016B2 Process for manufacturing semiconductor device 有权
标题翻译：半导体器件制造工艺
公开(公告)号：US07576016B2
公开(公告)日：2009-08-18
申请号：US11842762
申请日：2007-08-21
申请人： Kenichi Koyanagi , Takashi Arao
发明人： Kenichi Koyanagi , Takashi Arao
IPC分类号： H01L21/31 , H01L21/469 , H01L21/44
CPC分类号： H01L21/31616 , C23C16/45527 , C23C16/45546 , C23C16/54 , H01L21/02178 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/3142 , H01L21/31645 , H01L27/10814 , H01L27/10852 , H01L28/82
摘要： An objective of this invention is to solve the problem that in ALD film deposition using a vertical batch processing machine advantageous for improving a throughput, reliability in a dielectric body formed on the bottom of a hole such as a capacitor formed on a semiconductor substrate is reduced as the hole is finer and deeper.A dielectric body is formed by an ALD film deposition process comprising a gas flow sequence where a purging step after supplying a source and a reactant gases is a two-stage purging of vacuum purging and gas purging and the step of supplying a reactant gas is further divided. The process allows a highly reliable dielectric body to be formed in the bottom of a deep hole, contributing to improvement in reliability of a capacitor and a semiconductor device.
摘要翻译：本发明的一个目的是解决在有利于提高生产量的垂直批量处理机的ALD膜沉积中，形成在诸如形成在半导体衬底上的电容器的孔的底部上的电介质的可靠性降低因为洞更细更深。通过包括气流序列的ALD膜沉积法形成电介质体，其中供给源和反应气体之后的清洗步骤是真空清洗和气体净化的两级清洗，并且进一步提供反应气体的步骤分为。该方法允许在深孔的底部形成高度可靠的绝缘体，有助于提高电容器和半导体器件的可靠性。

24. 发明授权

US06033990A Method for manufacturing a multilevel interconnection structure 失效
标题翻译：制造多层互连结构的方法
公开(公告)号：US06033990A
公开(公告)日：2000-03-07
申请号：US34776
申请日：1998-03-04
申请人： Koji Kishimoto , Kenichi Koyanagi
发明人： Koji Kishimoto , Kenichi Koyanagi
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/768 , H01L21/00
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/76802 , H01L21/76814
摘要： A method for fabricating a semiconductor device on a silicon substrate comprises the step of high-frequency plasma-treatment for through-hole before filling the through-hole with a metallic layer for connection. The plasma contains argon, oxygen and hydrogen atoms wherein the ratio of oxygen atoms to the total of the oxygen and hydrogen atoms in number is between 1/3 and 1/100. The silicon substrate is applied with a high-frequency bias voltage during the plasma treatment for acceleration of argon ion.
摘要翻译：一种用于在硅衬底上制造半导体器件的方法包括在用连接金属层填充通孔之前对通孔进行高频等离子体处理的步骤。等离子体含有氩，氧和氢原子，其中氧原子与氧和氢原子的总数之比在1/3至1/100之间。在用于加速氩离子的等离子体处理期间，硅衬底被施加高频偏置电压。

25. 发明申请

US20120323363A1 ROBOT SYSTEM 有权
标题翻译：机器人系统
公开(公告)号：US20120323363A1
公开(公告)日：2012-12-20
申请号：US13354723
申请日：2012-01-20
申请人： Tetsuro Izumi , Kenichi Koyanagi , Kenji Matsukuma , Yukio Hashiguchi
发明人： Tetsuro Izumi , Kenichi Koyanagi , Kenji Matsukuma , Yukio Hashiguchi
IPC分类号： G05B19/418
CPC分类号： G05B19/4182 , B25J9/1697 , G05B2219/37555 , G05B2219/39102 , G05B2219/40007 , Y02P90/083
摘要： A robot system according to embodiments includes a conveying device, a plurality of robots, an image capturing device, a workpiece detecting device, and a control device. The control device includes an operation instruction unit and an allocating unit. The operation instruction unit generates an operation instruction for performing a holding operation on workpieces on the basis of the detection result of the workpiece detecting device and transmits the operation instruction to the robots. The allocating unit determines which of the plurality of robots to which the operation instruction unit transmits the operation instruction on the basis of conveying situations of the workpieces obtained from the detection result of the workpiece detecting device.
摘要翻译：根据实施例的机器人系统包括输送装置，多个机器人，图像捕获装置，工件检测装置和控制装置。控制装置包括操作指令单元和分配单元。操作指示单元基于工件检测装置的检测结果生成用于对工件执行保持操作的操作指令，并将操作指令发送给机器人。分配单元基于从工件检测装置的检测结果获得的工件的传送情况，确定操作指令单元发送操作指令的多个机器人中的哪一个。

26. 发明授权

US08277891B2 Method for suppressing particle generation during semiconductor manufacturing 有权
标题翻译：抑制半导体制造时的粒子生成的方法
公开(公告)号：US08277891B2
公开(公告)日：2012-10-02
申请号：US12766319
申请日：2010-04-23
申请人： Yuichiro Morozumi , Kenichi Koyanagi , Takashi Arao , Kazunori Une
发明人： Yuichiro Morozumi , Kenichi Koyanagi , Takashi Arao , Kazunori Une
IPC分类号： C23C16/30
CPC分类号： C23C16/45548 , C23C16/405
摘要： A technique for effectively suppressing the generation of particles resulting from peeling-off of unnecessary films that have unavoidably adhered to the inner surface of the reaction tube of an ALD film-forming apparatus during a film formation process for forming a film on a semiconductor substrate. A precoating process utilizing ALD is performed to deposit a metal oxide film, e.g., an aluminum oxide film, onto the unnecessary films, in order to prevent peeling-off of the unnecessary films. Ozone is supplied, as a precoat gas, into the reaction tube during the precoating process by a nozzle of a different type and/or position from that of the nozzle for supplying ozone, as a film-forming gas, into the reaction tube during the film formation process.
摘要翻译：一种用于在半导体衬底上形成膜的成膜工艺期间有效地抑制由于剥离不必要的膜而导致的不必要的膜产生的技术，所述不必要的膜不可避免地附着在ALD膜形成装置的反应管的内表面上。执行利用ALD的预涂工艺以将不需要的膜上的金属氧化物膜，例如氧化铝膜沉积到不需要的膜上，以防止不需要的膜的剥离。臭氧作为预涂气体在预涂工艺期间通过与喷嘴不同类型和/或位置的喷嘴作为成膜气体供应到反应管中，作为成膜气体成膜过程。

27. 发明申请

US20080066677A1 Semiconductor manufacturing system 审中-公开
标题翻译：半导体制造系统
公开(公告)号：US20080066677A1
公开(公告)日：2008-03-20
申请号：US11802358
申请日：2007-05-22
申请人： Yuichiro Morozumi , Kenichi Koyanagi , Takashi Arao , Kazunori Une
发明人： Yuichiro Morozumi , Kenichi Koyanagi , Takashi Arao , Kazunori Une
IPC分类号： C23C16/00
CPC分类号： C23C16/45548 , C23C16/405
摘要： Disclosed is a technique for effectively suppressing the generation of particles resulting from peeling-off of unnecessary films that have unavoidably adhered to the inner surface of the reaction tube of an ALD film-forming apparatus. A precoating process utilizing ALD is performed to deposit a metal oxide film, e.g., an aluminum oxide film, onto the unnecessary films, in order to prevent peeling-off of the unnecessary films. The type and/or position of the nozzle for supplying ozone, as a precoat gas, into the reaction tube during the precoating process is different from that of the nozzle for supplying ozone, as a film-forming gas, into the reaction tube during forming of a film on a semiconductor substrate.
摘要翻译：公开了一种用于有效地抑制由于不可避免地粘附到ALD膜形成装置的反应管的内表面的不需要的膜而产生的颗粒的产生的技术。执行利用ALD的预涂工艺以将不需要的膜上的金属氧化物膜，例如氧化铝膜沉积到不需要的膜上，以防止不需要的膜的剥离。用于在预涂工艺期间将臭氧作为预涂气体供应到反应管中的喷嘴的类型和/或位置与在成形期间作为成膜气体供应到反应管中的作为成膜气体的喷嘴的喷嘴不同的半导体衬底上的膜。

28. 发明授权

US07256144B2 Method for forming a metal oxide film 有权
标题翻译：金属氧化物膜的形成方法
公开(公告)号：US07256144B2
公开(公告)日：2007-08-14
申请号：US10808193
申请日：2004-03-24
申请人： Kenichi Koyanagi , Hiroshi Sakuma
发明人： Kenichi Koyanagi , Hiroshi Sakuma
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02271 , C23C16/405 , C23C16/45525 , H01L21/02175 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/3141 , H01L21/31637 , H01L27/10852 , H01L28/84 , H01L28/90
摘要： A method for forming a capacitor insulation film includes the step of depositing a monoatomic film made of a metal by supplying a metal source including the metal and no oxygen, and depositing a metal oxide film including the metal by using a CVD technique. The method provides the metal oxide film having higher film properties with a higher throughput.
摘要翻译：一种形成电容器绝缘膜的方法包括通过提供包括金属和不含氧的金属源沉积由金属制成的单原子膜并通过CVD技术沉积包括金属的金属氧化物膜的步骤。该方法提供具有较高膜特性并具有较高生产量的金属氧化物膜。

29. 发明授权

US06939760B2 Method for semiconductor device manufacturing to include multistage chemical vapor deposition of material oxide film 失效
标题翻译：半导体器件制造方法包括材料氧化膜的多级化学气相沉积
公开(公告)号：US06939760B2
公开(公告)日：2005-09-06
申请号：US10609476
申请日：2003-07-01
申请人： Hirofumi Fujioka , Kenichi Koyanagi , Hiroyuki Kitamura
发明人： Hirofumi Fujioka , Kenichi Koyanagi , Hiroyuki Kitamura
IPC分类号： C23C16/44 , C23C16/40 , C23C16/455 , G11C7/00 , H01L21/02 , H01L21/205 , H01L21/316 , H01L21/8242 , H01L27/108
CPC分类号： H01L21/0228 , C23C16/405 , C23C16/45553 , H01L21/02181 , H01L21/02183 , H01L21/02189 , H01L21/31637 , H01L27/10852 , H01L28/40
摘要： There is provided a method for manufacturing a semiconductor device including a capacitor having a lower electrode, an upper electrode and a capacitive insulating film between the lower electrode and the upper electrode on a semiconductor substrate, wherein the capacitive insulating film is formed on the lower electrode over the semiconductor substrate using a chemical vapor deposition method, the method including: a lower electrode forming step of forming the lower electrode on the semiconductor, a dual-stage deposition step including a first stage for introducing a material gas containing a specified metal into a reactor in which the semiconductor substrate is placed and a second stage for subsequently introducing an oxidizing gas into the reactor, and wherein a metal oxide film as an oxide of the specified metal is formed on the lower electrode over the semiconductor substrate, by repeating the dual-stage deposition step two or more times, thereby forming the capacitive insulating film; and an upper electrode forming step of forming the upper electrode on the capacitive insulating film. Thus, it is possible to obtain the capacitive insulating film having good step coverage and a good film quality, without reducing throughput.
摘要翻译：提供一种制造半导体器件的方法，该半导体器件包括在半导体衬底上的下电极和上电极之间具有下电极，上电极和电容绝缘膜的电容器，其中电容绝缘膜形成在下电极在半导体基板上使用化学气相沉积法，该方法包括：在半导体上形成下电极的下电极形成步骤，包括用于将含有特定金属的材料气体引入到第一级的第一级的双级沉积步骤其中放置半导体衬底的反应器和用于随后将氧化气体引入反应器的第二阶段，并且其中在半导体衬底上的下电极上形成作为特定金属的氧化物的金属氧化物膜，阶段沉积步骤两次或更多次，从而形成电容绝缘f ; 以及在电容绝缘膜上形成上电极的上电极形成步骤。因此，可以获得具有良好的台阶覆盖率和良好的膜质量的电容绝缘膜，而不降低生产量。

30. 发明授权

US06187693B1 Heat treatment of a tantalum oxide film 有权
标题翻译：氧化钽膜的热处理
公开(公告)号：US06187693B1
公开(公告)日：2001-02-13
申请号：US09439346
申请日：1999-11-15
申请人： Kenichi Koyanagi
发明人： Kenichi Koyanagi
IPC分类号： H01L2131
CPC分类号： H01L21/02183 , C23C16/405 , C23C16/56 , H01L21/02271 , H01L21/02337 , H01L21/02356 , H01L21/31604 , H01L28/40
摘要： A method of manufacturing a tantalum oxide film having a high dielectric constant suitable for use in a high density DRAM, and a small leakage current. After forming a tantalum oxide film in amorphous state which includes moisture and impurities such as organic substances, and before crystallizing the film, the tantalum oxide film in amorphous state is subjected to a first heat treatment at a temperature which is higher than the formation temperature of the tantalum oxide film in amorphous state and which is lower than the temperature of crystallization of the tantalum oxide film in amorphous state. As a result of the first heat treatment, the moisture and the impurities such as organic substances existing in the film are surely removed from the film. Accordingly, in a subsequent heat treatment for crystallization at a high temperature, there arises no phenomenon in which crystallization of the film proceeds while impurities in the film are being removed. In other words, the crystallized tantalum oxide film obtained is free from stresses and defects.
摘要翻译：一种适用于高密度DRAM的具有高介电常数的钽氧化物膜的制造方法和小的漏电流。在形成包含水分和诸如有机物质的杂质的非晶状态的氧化钽膜之后，并且在使膜结晶之前，将非晶态的氧化钽膜在高于形成温度的温度下进行第一次热处理该非晶态钽氧化物膜比非晶态的氧化钽膜的结晶温度低。作为第一次热处理的结果，膜中存在的水分和有机物质等杂质被确实地除去。因此，在随后的高温结晶热处理中，不会发生膜的结晶化，同时除去膜中的杂质的现象。换句话说，所得结晶的氧化钽膜没有应力和缺陷。

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