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    • 24. 发明授权
    • Apparatus and method for fabricating arrays of atomic-scale contacts and gaps between electrodes and applications thereof
    • 用于制造原子尺度接触阵列和电极之间的间隙的装置和方法及其应用
    • US07030452B2
    • 2006-04-18
    • US10795151
    • 2004-03-04
    • Nongjian TaoSalah Boussaad
    • Nongjian TaoSalah Boussaad
    • H01L27/14H01L29/82H01L29/84
    • G01R33/06B82Y10/00B82Y15/00H01L49/006H01L51/0595
    • A method for forming atomic-scale contacts and atomic-scale gaps between two electrodes is disclosed. The method provides for applying a voltage between two electrodes in a circuit with a resistor. The applied voltage etches metal ions off one electrode and deposits the metal ions onto the second electrode. The metal ions are deposited on the sharpest point of the second electrode, causing the second electrode to grow towards the first electrode until an atomic-scale contact is formed. By increasing the magnitude of the resistor, the etching and deposition process will terminate prior to contact, forming an atomic-scale gap. The atomic-scale contacts and gaps formed according to this method are useful as a variety of nanosensors including chemical sensors, biosensors, hydrogen ion sensors, heavy metal ion sensors, magnetoresistive sensors, and molecular switches.
    • 公开了一种在两个电极之间形成原子尺度接触和原子尺度间隙的方法。 该方法提供了在具有电阻器的电路中的两个电极之间施加电压。 施加的电压将金属离子从一个电极上除去并将金属离子沉积到第二电极上。 金属离子沉积在第二电极的最尖点上,导致第二电极朝着第一电极生长,直到形成原子级接触。 通过增加电阻的大小,蚀刻和沉积过程将在接触之前终止,形成原子尺度间隙。 根据该方法形成的原子尺度接触和间隙可用作各种包括化学传感器,生物传感器,氢离子传感器,重金属离子传感器,磁阻传感器和分子开关的纳米传感器。