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21. 发明专利

AU2003256077A8 Mbe growth of an algan layer or algan multilayer structure 未知
公开(公告)号：AU2003256077A8
公开(公告)日：2004-03-11
申请号：AU2003256077
申请日：2003-08-18
申请人： SHARP KK
发明人： HOOPER STEWART EDWARD , JOHNSON KATHERINE L , BARNES JENNIFER MARY , BOUSQUET VALERIE , HEFFERNAN JONATHAN
IPC分类号： H01L29/06 , C30B23/02 , H01L21/203 , H01L33/00
摘要： A method of growing an AlGaN semiconductor layer structure by Molecular Beam Epitaxy comprises supplying ammonia, gallium and aluminum to a growth chamber thereby to grow a first (Al,Ga)N layer by MBE over a substrate disposed in the growth chamber. The first (Al,Ga)N layer has a non-zero aluminum mole fraction. Ammonia is supplied at a beam equivalent pressure of at least 1 10-4 mbar, gallium is supplied at a beam equivalent pressure of at least 1 10-8 mbar and aluminum is supplied at a beam equivalent pressure of at least 1 10-8 mbar during the growth step. Once the first (Al,Ga)N layer has been grown, varying the supply rate of gallium and/or aluminum enables a second (Al,Ga)N layer, having a different aluminum mole fraction from the first (Al,Ga)N layer to be grown by MBE over the first (Al,Ga)N layer. This process may be repeated to grown an (Al,Ga)N multilayer structure.

22. 发明专利

GB2474460A Lighting system for selectively coupling a light source to light outputs 未知
公开(公告)号：GB2474460A
公开(公告)日：2011-04-20
申请号：GB0917994
申请日：2009-10-14
申请人： SHARP KK
发明人： HEFFERNAN JONATHAN , PRYCE-JONES GLYN BARRY , HOOPER STEWART EDWARD , BROADLEY VICTORIA
IPC分类号： G02B6/00 , B60Q1/00 , F21S8/12 , F21V7/00
摘要： A remote source lighting system has a light source 1, light outputs, such as optic fibres 5 and a single coupler 3 for selectively coupling light from the light source towards one or more desired ones of the light outputs. The coupler may, for example, be a moveable/re-orientatable mirror that generates beams 4 from the incident light beam 2 from the light source 1, with the coupling of light towards the light outputs being dependent on the position/orientation of the mirror 3. The system can provide independently controllable light outputs from a central light source, while requiring only a single coupler 3. Driver circuits 8 can control the intensity of the light and the orirntation of the mirror. The lighting system may be used in a vehicle for taillights and headlights or a building.

23. 发明专利

GB2458907A Device interconnects 未知
公开(公告)号：GB2458907A
公开(公告)日：2009-10-07
申请号：GB0805848
申请日：2008-04-01
申请人： SHARP KK
发明人： ALTEBAEUMER THOMAS HEINZ-HELMUT , DAY STEPHEN , LANG CHRISTIAN , HEFFERNAN JONATHAN
IPC分类号： H01L23/538 , H01L21/60 , H01L25/065
摘要： In a method of fabricating a device structure an insulating layer (3b) is formed over a first set of devices disposed over a substrate (3). One or more vias are formed in the insulating layer and a second set of devices (6) is disposed over the insulating layer. The devices of the second set comprise respective electrical contacts (6a) and are disposed over the insulating layer (3b) such that a side on which a contact (6a) can be accessed faces the substrate (3). One or more electrical contacts are formed between the first set of devices and the second set of devices (6) through the via(s). The second set of devices and at least one via are positioned such that one or more of the vias lies at least partially within the footprint of two devices, each belonging to a different device layer. This reduces the area of the substrate not occupied by devices. At least one device of the second set (6) comprises electrical contacts (6a) that can be accessed on two opposing sides and is disposed over the insulating layer (3b) such that one of the sides on which contacts can be accessed faces the substrate. This allows any desired number of layers of devices to be stacked.

24. 发明专利

GB2458906A Nanowire manufacture 未知
公开(公告)号：GB2458906A
公开(公告)日：2009-10-07
申请号：GB0805846
申请日：2008-04-01
申请人： SHARP KK
发明人： ALTEBAEUMER THOMAS HEINZ-HELMUT , DAY STEPHEN , LANG CHRISTIAN , TAYLOR PETER NEIL , HEFFERNAN JONATHAN
IPC分类号： H01L21/20
摘要： Nanowire structures 13 are attached to a substrate using a flexible adhesive joint 14. The nanowires may be rotated and aligned and then transferred to another substrate for device applications. The low dimensional structures may be used for electronic, MEMS or display

25. 发明专利

GB2454655A Nitride structures with AlInN current confinement layers 未知
公开(公告)号：GB2454655A
公开(公告)日：2009-05-20
申请号：GB0722016
申请日：2007-11-09
申请人： SHARP KK
发明人： BOUSQUET VALERIE , KAUER MATTHIAS , TAN WEI-SIN , HEFFERNAN JONATHAN , TAKAHASHI KOJI
IPC分类号： H01L33/00
摘要： A III-nitride compound device structures, such as for laser diodes or LEDs, have one or more current confinement layers 7 of AIInN and formed with an aperture. The confinement layer 7 may be positioned in the n or p cladding layers. The layer of AlInN may be grown with a small lattice-mismatch with an underlying layer, for example an underlying GaN layer, thus preventing added crystal strain in the device. By using optimised growth conditions the resistivity of the AlInN is made higher than 1x10^2 ohm.cm thus preventing current flow when used as a current blocking layer in a multilayer semiconductor device with layers having relatively lower resistivity.

26. 发明专利

GB2413434A a semiconductor light-emitting device and a method of manufacture 未知
公开(公告)号：GB2413434A
公开(公告)日：2005-10-26
申请号：GB0400364
申请日：2004-01-09
申请人： SHARP KK
发明人： JOHNSON KATHERINE LOUISE , HOOPER STUART EDWARD , BOUSQUET VALERIE , KAUER MATTHIAS , HEFFERNAN JONATHAN
IPC分类号： H01S5/042 , H01L21/00 , H01L33/00 , H01S5/00 , H01S5/02 , H01S5/22 , H01S5/227 , H01S5/323
摘要： A method of manufacturing a semiconductor light-emitting device comprises selectively etching a semiconductor layer structure 16 fabricated in a nitride materials system and including an aluminium-containing cladding layer or an aluminium-containing optical guiding layer 5. The etching step forms a mesa 17, and also exposes one or more portions of the aluminium-containing cladding layer or the aluminium-containing optical guiding layer 5 . The or each exposed portion of the aluminium-containing cladding layer or the aluminium-containing optical guiding layer 5 is then oxidised to form a current blocking layer 18 laterally adjacent to and extending laterally from the mesa. When an electrically conductive contact layer 11 is deposited, the current blocking layer 18 will prevent the contact layer 11 from making direct contact with the buffer layer 3.

27. 发明专利

GB2407702A A semiconductor light-emitting device 未知
公开(公告)号：GB2407702A
公开(公告)日：2005-05-04
申请号：GB0325100
申请日：2003-10-28
申请人： SHARP KK
发明人： HOOPER STEWART EDWARD , BOUSQUET VALERIE , JOHNSON KATHERINE L , HEFFERNAN JONATHAN
IPC分类号： H01L29/06 , H01S5/02 , H01S5/34 , H01S5/343
摘要： A semiconductor light-emitting device fabricated in a nitride material system has an active region 5 disposed over a substrate 1. The active region 5 comprises a first aluminium-containing layer 12 forming the lowermost layer of the active region, a second aluminium-containing layer 14 forming the uppermost layer of the active region, and at least one InGaN quantum well layer 13 disposed between the first aluminium-containing layer 12, and the second aluminium-containing layer 14. The aluminium-containing layers (12,14) provide improved carrier confinement in the active region 5, and so increase the output optical power of the device. The device may be a light-emitting diode 11 or a laser diode.

28. 发明专利

GB2400234A Semiconductor device and method of manufacture 未知
公开(公告)号：GB2400234A
公开(公告)日：2004-10-06
申请号：GB0307555
申请日：2003-04-02
申请人： SHARP KK
发明人： ROSHAN RAKESH , POOLE BRENDAN , HOOPER STEWART EDWARD , HEFFERNAN JONATHAN
IPC分类号： H01S5/065 , H01S5/22 , H01S5/024
摘要： Passively modelocked semiconductor laser device 19 comprises active region 4 and cladding layer 5, 7. A saturable absorbing layer 6 within the cladding layer, for example a thick quantum well layer (TQW), has at least a portion 11a which absorbs light emitted by the active region, and at least a portion 11b which is made non-absorbing by increasing the band gap in that region by introduction of vacancies through plasma irradiation, causing quantum well intermixing. Portions 11a and 11b may be arranged alternately in stripes, across the direction of lasing; the non-absorbing portions acting as a heat sink for heat produced in the absorbing regions. The fabrication method enables non-absorbing portions 11b to be produced after the device has been fabricated, so that the degree of overlap between the non-absorbing portions and the optical mode of the laser can be altered after the device has been grown.

29. 发明专利

GB2399940A Vertical cavity surface emitting laser 未知
公开(公告)号：GB2399940A
公开(公告)日：2004-09-29
申请号：GB0306778
申请日：2003-03-25
申请人： SHARP KK
发明人： HOOPER STEWART EDWARD , HEFFERNAN JONATHAN
IPC分类号： H01S3/08 , H01S5/00 , H01S5/042 , H01S5/183 , H01S5/20 , H01S5/343
摘要： A semiconductor laser device 15 comprises a substrate 16. A first minor structure 17, an active region 18 and a second minor structure 19 are disposed in this order over the substrate 16. The second minor structure has a first portion 28 having a first width W1 and a second portion 29 having a second width W2 less than the first width W1. The first portion 28 of the second minor structure 19 is disposed between the second portion 29 of the second minor structure 19 and the active region 18. A contact 24 is disposed on the surface of the first portion of the second minor structure, where it is not covered by the second portion of the second minor structure. The contact 24 is thus provided at an intermediate location, in the thickness direction, of the second minor structure 19. Current injected into the laser device via the contact 24 does not need to pass through the entire thickness of the second minor structure, but has to pass only through the first portion of the second minor structure. The resistance of the current path through the laser device is therefore reduced. Contact 24 is formed on the etch stop layer 23.

30. 发明专利

GB2363518A A method of growing a nitride layer on a GaN substrate 未知
公开(公告)号：GB2363518A
公开(公告)日：2001-12-19
申请号：GB0014952
申请日：2000-06-17
申请人： SHARP KK
发明人： HOOPER STEWART EDWARD , BARNES JENNIFER MARY , HEFFERNAN JONATHAN , KEAN ALISTAIR HENDERSON
IPC分类号： C30B29/38 , C30B23/02 , C30B23/08 , C30B25/02 , H01L21/203
摘要： The method uses molecular beam epitaxy (MBE) to grow a nitride semiconductor layer on a GaN substrate in a growth chamber 10. The nitride semiconductor layer is grown using a substrate temperature of at least 850{C. Ammonia gas is supplied to the chamber 10 during the growth of the nitride semiconductor layer. The substrate may be baked for up to 30 minutes. The temperature of the substrate may be reduced to 800{C or less after the nitride semiconductor layer has been grown. An (Al,Ga,In)N layer may be grown on the nitride semiconductor layer.

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