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    • 27. 发明授权
    • Apparatus and method for controlling plasma potential
    • 用于控制等离子体电位的装置和方法
    • US09111724B2
    • 2015-08-18
    • US12905041
    • 2010-10-14
    • Douglas KeilLumin LiReza SadjadiEric HudsonEric LenzRajinder Dhindsa
    • Douglas KeilLumin LiReza SadjadiEric HudsonEric LenzRajinder Dhindsa
    • H01J7/24C23C16/00C23F1/00H01L21/306H01J37/32
    • H01J37/32183H01J37/32091H01J37/32174H01J37/32532
    • A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.
    • 腔室包括下电极和上电极。 下电极被限定为透射射频电流通过腔室并且支撑半导体晶片暴露于腔室内的等离子体。 上电极设置在下电极的上方并与之隔开的关系。 上部电极与腔室电气隔离,并且由中心部分和一个或多个同心地设置在中心部分外部的环形部分限定。 上部电极的相邻部分通过电介质材料彼此电分离。 多个电压源分别连接到上电极部分。 每个电压源被定义为相对于腔室控制与其连接的上电极部分的电位。 每个上电极部分的电位影响室内的等离子体的电位。
    • 28. 发明申请
    • Apparatus and Method for Controlling Plasma Potential
    • 用于控制等离子体电位的装置和方法
    • US20110024045A1
    • 2011-02-03
    • US12905041
    • 2010-10-14
    • Douglas KeilLumin LiReza SadjadiEric HudsonEric LenzRajinder Dhindsa
    • Douglas KeilLumin LiReza SadjadiEric HudsonEric LenzRajinder Dhindsa
    • H01L21/306
    • H01J37/32183H01J37/32091H01J37/32174H01J37/32532
    • A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.
    • 腔室包括下电极和上电极。 下电极被限定为透射射频电流通过腔室并且支撑半导体晶片暴露于腔室内的等离子体。 上电极设置在下电极的上方并与之隔开的关系。 上部电极与腔室电气隔离,并且由中心部分和一个或多个同心地设置在中心部分外部的环形部分限定。 上部电极的相邻部分通过电介质材料彼此电分离。 多个电压源分别连接到上电极部分。 每个电压源被定义为相对于腔室控制与其连接的上电极部分的电位。 每个上电极部分的电位影响室内的等离子体的电位。