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21. 发明授权

US09070473B2 Refresh architecture and algorithm for non-volatile memories 有权
标题翻译：刷新非易失性存储器的架构和算法
公开(公告)号：US09070473B2
公开(公告)日：2015-06-30
申请号：US13513139
申请日：2009-12-02
申请人： Ferdinando Bedeschi , Roberto Gastaldi
发明人： Ferdinando Bedeschi , Roberto Gastaldi
IPC分类号： G11C11/00 , G11C16/34 , G11C13/00 , G11C11/56
CPC分类号： G11C13/0033 , G06F11/1068 , G11C11/5678 , G11C13/0004 , G11C13/0038 , G11C13/004 , G11C13/0061 , G11C13/0069 , G11C14/009 , G11C16/3418 , G11C29/52
摘要： Methods and systems to refresh a non-volatile memory device, such as a phase change memory. In an embodiment, as a function of system state, a memory device performs either a first refresh of memory cells using a margined read reference level or a second refresh of error-corrected memory cells using a non-margined read reference level.
摘要翻译：刷新非易失性存储器件的方法和系统，例如相变存储器。在一个实施例中，作为系统状态的函数，存储器设备使用边缘读取参考电平或使用非余量读取参考电平对错误校正的存储器单元的第二刷新来执行存储器单元的第一刷新。

22. 发明授权

US07159284B2 Seat belt buckle, in particular for racing vehicles 有权
标题翻译：安全带扣，特别是赛车
公开(公告)号：US07159284B2
公开(公告)日：2007-01-09
申请号：US10935083
申请日：2004-09-08
申请人： Roberto Gastaldi
发明人： Roberto Gastaldi
IPC分类号： A44B11/25
CPC分类号： A44B11/2542 , Y10T24/45618 , Y10T24/45623
摘要： A seat belt buckle, in particular for racing vehicles, having: a casing defining at least one slot engageable by an end member of a strap of a seat belt for connection; a lock mechanism housed in the casing and for releasably retaining the end member; and a release lever fitted to the casing and movable, from a rest position, along a path lying in an actuating plane to release the lock mechanism from the end member, the release lever having an end projecting from the casing in the actuating plane as the release lever moves along the path. The buckle also has a lever guard portion fitted to the casing and having a lateral surface, an ideal extension of which in a direction perpendicular to the actuating plane surrounds the end of the release lever in the rest position.
摘要翻译：一种安全带扣，特别是用于赛车的安全带扣，具有：限定至少一个槽的壳体，该槽可由用于连接的安全带的带的端部构件接合; 锁定机构，其容纳在所述壳体中并且用于可释放地保持所述端部构件; 以及释放杆，其安装到所述壳体并且从静止位置沿着位于致动平面中的路径移动以从所述端部构件释放所述锁定机构，所述释放杆具有在所述致动平面中从所述壳体突出的端部，释放杆沿着路径移动。带扣还具有安装到壳体并具有侧表面的杠杆保护部分，其在垂直于致动平面的方向上的理想的延伸部围绕释放杆的在静止位置的端部。

23. 发明授权

US08553453B2 Phase change memory device 有权
标题翻译：相变存储器件
公开(公告)号：US08553453B2
公开(公告)日：2013-10-08
申请号：US12442392
申请日：2007-07-26
申请人： Fabio Pellizzer , Roberto Bez , Ferdinando Bedeschi , Roberto Gastaldi
发明人： Fabio Pellizzer , Roberto Bez , Ferdinando Bedeschi , Roberto Gastaldi
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C11/56 , G11C11/5678 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2213/79 , H01L27/2427 , H01L27/2463 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144
摘要： A phase change memory device with memory cells (2) formed by a phase change memory element (3) and a selection switch (4). A reference cell (2a) formed by an own phase change memory element (3) and an own selection switch (4) is associated to a group (7) of memory cells to be read. An electrical quantity of the group of memory cells is compared with an analogous electrical quantity of the reference cell, thereby compensating any drift in the properties of the memory cells.
摘要翻译：一种具有由相变存储元件（3）和选择开关（4）形成的存储单元（2）的相变存储器件。由自己的相变存储元件（3）和自己的选择开关（4）形成的参考单元（2a）与待读取的存储单元组（7）相关联。将该组存储器单元的电量与参考单元的类似电量进行比较，由此补偿存储单元的特性中的任何漂移。

24. 发明授权

US08467237B2 Read distribution management for phase change memory 有权
公开(公告)号：US08467237B2
公开(公告)日：2013-06-18
申请号：US12905754
申请日：2010-10-15
申请人： Ferdinando Bedeschi , Roberto Gastaldi
发明人： Ferdinando Bedeschi , Roberto Gastaldi
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C11/5678 , G11C13/0004 , G11C13/0035 , G11C13/0064 , G11C13/0069 , G11C2013/0054 , G11C2211/5634 , G11C2213/54
摘要： Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a phase change memory.

25. 发明申请

US20100284212A1 METHOD FOR MULTILEVEL PROGRAMMING OF PHASE CHANGE CELLS USING ADAPTIVE RESET PULSES 有权
标题翻译：使用自适应复位脉冲进行相位变化的多重编程的方法
公开(公告)号：US20100284212A1
公开(公告)日：2010-11-11
申请号：US12780580
申请日：2010-05-14
申请人： Ferdinando Bedeschi , Claudio Resta , Enzo Michele Donze , Roberto Gastaldi , Alessandro Cabrini , Guido Torelli
发明人： Ferdinando Bedeschi , Claudio Resta , Enzo Michele Donze , Roberto Gastaldi , Alessandro Cabrini , Guido Torelli
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C11/5678 , G11C13/0004 , G11C13/0064 , G11C2013/0076 , G11C2013/0092
摘要： A method for programming multilevel PCM cells envisages: forming an amorphous region of amorphous phase change material in a storage element of a PCM cell by applying one or more reset pulse; and forming a conductive path of crystalline phase change material through the amorphous region by applying one or more set pulse, a size of the conductive path defining a programmed state of the PCM cell and an output electrical quantity associated thereto, and being controlled by the value of the reset pulse and set pulse. The step of forming an amorphous region envisages adaptively and iteratively determining, during the programming operations, a value of the reset pulse optimized for electrical and/or physical properties of the PCM cell, and in particular determining a minimum amplitude value of the reset pulse, which allows programming a desired programmed state and a desired value of the output electrical quantity.
摘要翻译：用于编程多电平PCM单元的方法设想：通过施加一个或多个复位脉冲，在PCM单元的存储元件中形成非晶相变材料的非晶区域; 以及通过施加一个或多个设定脉冲，形成所述PCM单元的编程状态的导电路径的大小和与其相关联的输出电量，并通过所述值来控制所述晶体相变材料的导电路径通过所述非晶区域的复位脉冲和设定脉冲。形成非晶区域的步骤设想在编程操作期间自适应地和迭代地确定针对PCM单元的电气和/或物理特性优化的复位脉冲的值，特别是确定复位脉冲的最小振幅值，这允许编程期望的编程状态和输出电量的期望值。

26. 发明申请

US20060221734A1 DETECTING SWITCHING OF ACCESS ELEMENTS OF PHASE CHANGE MEMORY CELLS 有权
标题翻译：检测相变记忆细胞存取元件的切换
公开(公告)号：US20060221734A1
公开(公告)日：2006-10-05
申请号：US11093709
申请日：2005-03-30
申请人： Ferdinando Bedeschi , Claudio Resta , Ward Parkinson , Roberto Gastaldi
发明人： Ferdinando Bedeschi , Claudio Resta , Ward Parkinson , Roberto Gastaldi
IPC分类号： G11C29/00
CPC分类号： G11C13/003 , G11C7/062 , G11C7/08 , G11C13/0004 , G11C13/004 , G11C13/0061 , G11C2013/0054 , G11C2013/0071 , G11C2213/76
摘要： A memory includes a storage element (OUM) made of a phase-change material for storing a logic value and an access element (OTS) switching from a higher resistance condition to a lower resistance condition in response to a selection of the memory cell, the access element in the higher resistance condition decoupling the storage element from a read circuit and in the lower resistance condition coupling the storage element to the read circuit. The read circuit includes a sense amplifier to determine the logic value stored in the memory cell according to an electrical quantity associated with the memory cell. The read circuit further includes a detector that detects the switching of the access element by comparison to a delayed waveform or sensing a change in the column rate of change, and a circuit to enable the sense amplifier in response to the detection of the switching of the access element.
摘要翻译：存储器包括由相变材料制成的用于存储逻辑值的存储元件（OUM）和响应于存储单元的选择从较高电阻状态切换到较低电阻状态的存取元件（OTS），较高电阻条件下的存取元件将存储元件与读取电路分离，并将该存储元件耦合到读取电路的较低电阻条件。读取电路包括读出放大器，用于根据与存储器单元相关联的电量确定存储单元中存储的逻辑值。读取电路还包括检测器，其通过与延迟波形进行比较来检测接入元件的切换，或者检测列变化率的变化;以及电路，用于响应于检测到的切换访问元素

27. 外观设计

USD515456S1 Buckle for safety belts 失效
公开(公告)号：USD515456S1
公开(公告)日：2006-02-21
申请号：US29212103
申请日：2004-08-25
申请人： Roberto Gastaldi
设计人： Roberto Gastaldi

28. 发明申请

US20050086778A1 Seat belt buckle, in particular for racing vehicles 有权
标题翻译：安全带扣，特别是赛车
公开(公告)号：US20050086778A1
公开(公告)日：2005-04-28
申请号：US10935083
申请日：2004-09-08
申请人： Roberto Gastaldi
发明人： Roberto Gastaldi
IPC分类号： A44B11/25
CPC分类号： A44B11/2542 , Y10T24/45618 , Y10T24/45623
摘要： A seat belt buckle, in particular for racing vehicles, having: a casing defining at least one slot engageable by an end member of a strap of a seat belt for connection; a lock mechanism housed in the casing and for releasably retaining the end member; and a release lever fitted to the casing and movable, from a rest position, along a path lying in an actuating plane to release the lock mechanism from the end member, the release lever having an end projecting from the casing in the actuating plane as the release lever moves along the path. The buckle also has a lever guard portion fitted to the casing and having a lateral surface, an ideal-extension of which in a direction perpendicular to the actuating plane surrounds the end of the release lever in the rest position.
摘要翻译：一种安全带扣，特别是用于赛车的安全带扣，具有：限定至少一个槽的壳体，该槽可由用于连接的安全带的带的端部构件接合; 锁定机构，其容纳在所述壳体中并且用于可释放地保持所述端部构件; 以及释放杆，其安装到所述壳体并且从静止位置沿着位于致动平面中的路径移动以从所述端部构件释放所述锁定机构，所述释放杆具有在所述致动平面中从所述壳体突出的端部，释放杆沿着路径移动。带扣还具有装配到壳体的杠杆保护部分，并且具有侧表面，在垂直于致动平面的方向上围绕释放杆的端部处于静止位置的理想延伸部分。

29. 发明授权

US06839818B2 Electrically modifiable, non-volatile, semiconductor memory which can keep a datum stored until an operation to modify the datum is completed 失效
标题翻译：完成可修改基准的操作之前可以保存数据的电可修改的非易失性半导体存储器
公开(公告)号：US06839818B2
公开(公告)日：2005-01-04
申请号：US10036088
申请日：2001-12-28
申请人： Roberto Gastaldi , Gianbattsista Lo Giudice , Marco Pasotti , Federico Pio
发明人： Roberto Gastaldi , Gianbattsista Lo Giudice , Marco Pasotti , Federico Pio
IPC分类号： G11C16/10 , G06F12/00
CPC分类号： G11C16/102
摘要： An electrically-modifiable, non-volatile, semiconductor memory comprising a plurality of user memory locations which can be addressed individually from outside the memory in order to read and to modify the data held therein is characterized in that, for each user memory location, there is a corresponding pair of physical memory locations in the memory, which assume, alternatively, the functions of an active memory location and of a non-active memory location, the active memory location containing a previously-written datum and the non-active memory location being available for the writing of a new datum to replace the previously-written datum, so that, upon a request to replace the previous datum with the new datum, the previous datum is kept in the memory until the new datum has been written.
摘要翻译：一种可电气修改的非易失性半导体存储器，其包括多个用户存储器位置，其可以从存储器外部单独寻址以便读取和修改其中保存的数据，其特征在于，对于每个用户存储器位置，存储器中的对应物理存储器位置对，其替代地假设有效存储器位置和非活动存储器位置的功能，所述活动存储器位置包含预先写入的数据和非活动存储器位置可用于写入新的数据以替换以前写入的数据，以便在要求使用新数据替换以前的数据时，先前的数据保存在存储器中，直到新的数据被写入。

30. 发明授权

US5673221A Circuit and method for reading a memory cell that can store multiple bits of data 失效
标题翻译：用于读取可存储多个数据位的存储单元的电路和方法
公开(公告)号：US5673221A
公开(公告)日：1997-09-30
申请号：US592939
申请日：1996-01-29
申请人： Cristiano Calligaro , Vincenzo Daniele , Roberto Gastaldi , Alessandro Manstretta , Nicola Telecco , Guido Torelli
发明人： Cristiano Calligaro , Vincenzo Daniele , Roberto Gastaldi , Alessandro Manstretta , Nicola Telecco , Guido Torelli
IPC分类号： G11C16/04 , G11C11/56 , G11C16/02 , G11C17/00
CPC分类号： G11C11/5621 , G11C11/5642 , G11C2211/5632
摘要： A sensing circuit for serial dichotomic sensing of multiple-level memory cells which can take one programming level among a plurality of m=2.sup.n (n>=2) different programming levels, comprises biasing means for biasing a memory cell to be sensed in a predetermined condition, so that the memory cell sinks a cell current with a value belonging to a plurality of m distinct cell current values, each cell current value corresponding to one of the programming levels, a current comparator for comparing the cell current with a reference current generated by a variable reference current generator, and a successive approximation register supplied with an output signal of the current comparator and controlling the variable reference current generator. The variable reference current generator comprises an offset current generator permanently coupled to the current comparator, and m-2 distinct current generators, independently activatable by the successive approximation register, each one generating a current equal to a respective one of the plurality of cell current values.
摘要翻译：用于在多个m = 2n（n> = 2）不同编程级别中可以采用一个编程级的多级存储器单元的串行二分感测的感测电路包括偏置装置，用于以预定的方式偏置待感测的存储器单元条件，使得存储器单元以属于多个m个不同的单元电流值的值吸收单元电流，每个单元电流值对应于一个编程电平，用于将单元电流与产生的参考电流进行比较的电流比较器通过可变参考电流发生器和逐次逼近寄存器来提供电流比较器的输出信号并控制可变参考电流发生器。可变参考电流发生器包括永久地耦合到电流比较器的偏移电流发生器和由逐次逼近寄存器独立激活的m-2个不同的电流发生器，每个电流发生器产生等于多个电池电流值中的相应一个的电流。

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