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21. 发明授权

US08037806B2 Rifle 有权
标题翻译：步枪
公开(公告)号：US08037806B2
公开(公告)日：2011-10-18
申请号：US13105952
申请日：2011-05-12
申请人： Robert B. Davies
发明人： Robert B. Davies
IPC分类号： F41A3/78
CPC分类号： F41C23/16 , F41A3/94 , F41A5/18 , F41A5/28 , F41A29/02 , F41C23/04 , F41C23/06
摘要： A rifle with an upper receiver and a barrel attached to the upper receiver and including a bolt carrier, and operating, buffer, and cooling systems. The operating system includes a cylinder and a piston coupled to receive propelling gases from the barrel. As the piston moves between retracted and extended positions the bolt carrier is moved between closed and open positions. The bolt carrier includes a weight movable within a guide frame between rearward and forward limits. The buffer system includes a compression spring in a tube attached to the upper receiver in abutting engagement with the bolt carrier. A partially fluid filled cylinder is attached to a coil of the spring and includes a piston and shaft. The piston is formed so that fluid in the cylinder restricts movement in one direction and allows free movement in a second direction.
摘要翻译：具有上接收器和连接到上接收器的筒的步枪，包括螺栓托架以及操作，缓冲和冷却系统。操作系统包括一个气缸和活塞，其连接以接收来自该桶的推进气体。当活塞在缩回位置和延伸位置之间移动时，螺栓承载件在关闭位置和打开位置之间移动。螺栓承载件包括可在向后和向前限制之间的引导框架内移动的重物。该缓冲系统包括一个压缩弹簧，该压缩弹簧连接到上部接收器上，与该螺栓承载件邻接。部分流体填充的圆筒附接到弹簧的线圈并且包括活塞和轴。活塞被形成为使得气缸中的流体限制在一个方向上的移动并允许在第二方向上的自由运动。

22. 发明申请

US20110209377A1 RIFLE 有权
标题翻译：步枪
公开(公告)号：US20110209377A1
公开(公告)日：2011-09-01
申请号：US13105952
申请日：2011-05-12
申请人： Robert B. Davies
发明人： Robert B. Davies
IPC分类号： F41A3/12
CPC分类号： F41C23/16 , F41A3/94 , F41A5/18 , F41A5/28 , F41A29/02 , F41C23/04 , F41C23/06
摘要： A rifle with an upper receiver and a barrel attached to the upper receiver and including a bolt carrier, and operating, buffer, and cooling systems. The operating system includes a cylinder and a piston coupled to receive propelling gases from the barrel. As the piston moves between retracted and extended positions the bolt carrier is moved between closed and open positions. The bolt carrier includes a weight movable within a guide frame between rearward and forward limits. The buffer system includes a compression spring in a tube attached to the upper receiver in abutting engagement with the bolt carrier. A partially fluid filled cylinder is attached to a coil of the spring and includes a piston and shaft. The piston is formed so that fluid in the cylinder restricts movement in one direction and allows free movement in a second direction.
摘要翻译：具有上接收器和连接到上接收器的筒的步枪，包括螺栓托架以及操作，缓冲和冷却系统。操作系统包括一个气缸和活塞，其连接以接收来自该桶的推进气体。当活塞在缩回位置和延伸位置之间移动时，螺栓承载件在关闭位置和打开位置之间移动。螺栓承载件包括可在向后和向前限制之间的引导框架内移动的重物。该缓冲系统包括一个压缩弹簧，该压缩弹簧连接到上部接收器上，与该螺栓承载件邻接。部分流体填充的圆筒附接到弹簧的线圈并且包括活塞和轴。活塞被形成为使得气缸中的流体限制在一个方向上的移动并允许在第二方向上的自由运动。

23. 发明授权

US07963203B1 Rifle 失效
公开(公告)号：US07963203B1
公开(公告)日：2011-06-21
申请号：US12882343
申请日：2010-09-15
申请人： Robert B. Davies
发明人： Robert B. Davies
IPC分类号： F41A13/12
CPC分类号： F41C23/16 , F41A3/94 , F41A5/18 , F41A5/28 , F41A29/02 , F41C23/04 , F41C23/06
摘要： A rifle with an upper receiver and a barrel attached to the upper receiver and including a bolt carrier, and operating, buffer, and cooling systems. The operating system includes a cylinder and a piston coupled to receive propelling gases from the barrel. As the piston moves between retracted and extended positions the bolt carrier is moved between closed and open positions. The bolt carrier includes a weight movable within a guide frame between rearward and forward limits. The buffer system includes a compression spring in a tube attached to the upper receiver in abutting engagement with the bolt carrier. A partially fluid filled cylinder is attached to a coil of the spring and includes a piston and shaft. The piston is formed so that fluid in the cylinder restricts movement in one direction and allows free movement in a second direction.

24. 发明授权

US07832323B1 Firearm suppressor 有权
标题翻译：火器抑制器
公开(公告)号：US07832323B1
公开(公告)日：2010-11-16
申请号：US11962412
申请日：2007-12-21
申请人： Robert B. Davies
发明人： Robert B. Davies
IPC分类号： F41A21/34
CPC分类号： F41A21/34 , F41A21/30 , F41A21/325
摘要： A suppressor for use with a firearm having a barrel with a muzzle and a bore, the suppressor includes an outer casing having a rearward end and a forward end, an evacuator assembly for receiving the muzzle of the firearm carried by the outer casing, and an expansion chamber defined between the outer casing and the evacuator assembly in gaseous communication with an interior volume of the evacuator assembly.
摘要翻译：一种用于具有枪口和枪口的枪支的抑制器，所述抑制器包括具有后端和前端的外壳，用于容纳由所述外壳承载的枪支的枪口的抽风机组件，以及膨胀室限定在外壳和抽气机组件之间，与抽气机组件的内部容积气态连通。

25. 发明授权

US07363741B2 Hand guard assembly for firearms 有权
标题翻译：枪支手枪组件
公开(公告)号：US07363741B2
公开(公告)日：2008-04-29
申请号：US11174270
申请日：2005-06-29
申请人： Frank DeSomma , Robert B. Davies
发明人： Frank DeSomma , Robert B. Davies
IPC分类号： F41G1/16
CPC分类号： F41G11/003 , F41C23/16
摘要： A hand guard assembly for a firearm including a barrel. The assembly includes a tubular unitary body mounted to surround a portion of the barrel substantially coaxially and in a transversely spaced relationship. The tubular body includes a plurality of air flow openings formed therethrough and at least one of a top rail formed as a unitary portion of the tubular body and extending rearwardly along an upper portion of a receiver of the firearm, side accessory rails formed as a unitary portion of the tubular body and on opposed sides of the tubular body, and a bottom accessory rail formed as a unitary portion of the tubular body and on a bottom surface of the tubular body. In the preferred method of fabricating the assembly, the body and any include accessory rails are extruded.
摘要翻译：用于包括枪管的枪支的护手组件。该组件包括一个管状整体，其安装成围绕筒的一部分基本同轴并以横向间隔的关系。管状体包括多个通过其形成的空气流动开口，以及形成为管状体的整体部分的顶部轨道中的至少一个，并且沿着枪械的接收器的上部向后延伸，侧部辅助导轨形成为整体管状体的一部分和管状体的相对侧，以及形成为管状体的整体部分和管状体的底表面的底部辅助轨道。在制造组件的优选方法中，主体和任何包括的附件轨道被挤压。

26. 发明授权

US07202152B2 Semiconductor device with inductive component and method of making 失效
标题翻译：具有感应元件的半导体器件及其制造方法
公开(公告)号：US07202152B2
公开(公告)日：2007-04-10
申请号：US11170877
申请日：2005-07-28
申请人： Robert B. Davies
发明人： Robert B. Davies
IPC分类号： H01L21/44 , H01L29/00
CPC分类号： H01L28/10 , H01L21/764 , H01L27/0617 , H01L27/08
摘要： An integrated circuit (10) includes a semiconductor substrate (11) that has a top surface (32) for forming a dielectric region (14) with a trench (40) and one or more adjacent cavities (16). A conductive material such as copper is disposed within the trench to produce an inductor (50). A top surface (49) of the inductor is substantially coplanar with an interconnect surface (31) of the semiconductor substrate, which facilitates connecting to the inductor with standard integrated circuit metallization (57).
摘要翻译：集成电路（10）包括具有用于形成具有沟槽（40）和一个或多个相邻空腔（16）的电介质区域（14）的顶表面（32）的半导体衬底（11）。诸如铜的导电材料设置在沟槽内以产生电感器（50）。电感器的顶表面（49）与半导体衬底的互连表面（31）基本上共面，这便于利用标准集成电路金属化（57）连接到电感器。

27. 发明授权

US5808362A Interconnect structure and method of forming 失效
标题翻译：互连结构和成型方法
公开(公告)号：US5808362A
公开(公告)日：1998-09-15
申请号：US609251
申请日：1996-02-29
申请人： Robert B. Davies , Andreas A. Wild , Peter J. Zdebel
发明人： Robert B. Davies , Andreas A. Wild , Peter J. Zdebel
IPC分类号： H01L21/336 , H01L21/8234 , H01L29/06 , H01L29/10 , H01L29/417 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L29/41775 , H01L21/8234 , H01L29/0653 , H01L29/1083 , H01L29/1087 , H01L29/41783 , H01L29/66621 , H01L29/665 , H01L29/66537
摘要： A graded-channel semiconductor device (10) is formed in a pedestal (12). The pedestal (12) is formed on a substrate (11) and improves the electrical characteristics of the device (10) compared to conventional device structures. The pedestal (12) has sides (13) that are bordered by a first dielectric layer (24) to provide electrical isolation. An interconnect structure (90) can be optionally formed in conjunction with the formation of the device (10). The interconnect structure (90) has a plurality of conductors (60,97) that can be used to transport electrical signals across the device (10).
摘要翻译：梯形通道半导体器件（10）形成在基座（12）中。与传统的装置结构相比，底座（12）形成在基板（11）上并改善了装置（10）的电气特性。基座（12）具有由第一介电层（24）邻接以提供电隔离的侧面（13）。互连结构（90）可以可选地与装置（10）的形成一起形成。互连结构（90）具有多个导体（60,97），其可用于传输跨越设备（10）的电信号。

28. 发明授权

US5612244A Insulated gate semiconductor device having a cavity under a portion of a gate structure and method of manufacture 失效
标题翻译：绝缘栅半导体器件具有在栅极结构的一部分下方的空腔和制造方法
公开(公告)号：US5612244A
公开(公告)日：1997-03-18
申请号：US408657
申请日：1995-03-21
申请人： Robert B. Davies , Andreas A. Wild
发明人： Robert B. Davies , Andreas A. Wild
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8238 , H01L29/423 , H01L21/265 , H01L21/70 , H01L27/00
CPC分类号： H01L29/42368 , H01L21/823807 , H01L21/823828 , H01L29/66659 , H01L21/28167
摘要： An insulated gate field effect transistor (10) having an reduced gate to drain capacitance and a method of manufacturing the field effect transistor (10). A dopant well (13) is formed in a semiconductor substrate (11). A gate oxide layer (26) is formed on the dopant well (13) wherein the gate oxide layer (26) and a gate structure (41) having a gate contact portion (43) and a gate extension portion (44). The gate contact portion (43) permits electrical contact to the gate structure (41), whereas the gate extension portion (44) serves as the active gate portion. A portion of the gate oxide (26) adjacent the gate contact portion (43) is thickened to lower a gate to drain capacitance of the field effect transistor (10) and thereby increase a bandwidth of the insulated gate field effect transistor (10).
摘要翻译：具有减小的栅极 - 漏极电容的绝缘栅场效应晶体管（10）和制造场效应晶体管（10）的方法。掺杂剂阱（13）形成在半导体衬底（11）中。栅极氧化物层（26）形成在掺杂剂阱（13）上，其中栅极氧化物层（26）和具有栅极接触部分（43）和栅极延伸部分（44）的栅极结构（41）。栅极接触部分（43）允许与栅极结构（41）的电接触，而栅极延伸部分（44）用作有源栅极部分。与栅极接触部分（43）相邻的栅极氧化物（26）的一部分被加厚以降低场效应晶体管（10）的栅极到漏极电容，从而增加绝缘栅极场效应晶体管（10）的带宽。

29. 发明授权

US5424897A Three leaded protected power device having voltage input 失效
标题翻译：具有电压输入的三引线保护功率器件
公开(公告)号：US5424897A
公开(公告)日：1995-06-13
申请号：US43948
申请日：1993-04-05
申请人： David F. Mietus , Robert B. Davies
发明人： David F. Mietus , Robert B. Davies
IPC分类号： H03K17/08 , H03K17/082 , H03K17/56
CPC分类号： H03K17/0826 , H03K2017/0806
摘要： A voltage driven control die (20) for use with a power device (22) has been provided. The voltage driven control die includes an under voltage lock-out circuit (46) which inhibits drive to the power device until the input voltage exceeds a predetermined threshold voltage. Moreover, the control die includes a noise immunity enhancement circuit (56) for providing an excess reverse bias across an output SCR (58) for preventing false triggering of the output SCR. The control die also includes circuitry (40, 44) for detecting an over temperature or an over current condition within the power device.
摘要翻译：已经提供了一种与功率器件（22）一起使用的电压驱动控制管芯（20）。电压驱动控制管芯包括欠压锁定电路（46），其阻止对功率器件的驱动，直到输入电压超过预定阈值电压。此外，控制管芯包括用于在输出SCR（58）上提供过大的反向偏置以防止输出SCR的错误触发的抗噪声增强电路（56）。控制管芯还包括用于检测功率器件内的过温或过电流状态的电路（40,44）。

30. 发明授权

US5289028A High power semiconductor device with integral on-state voltage detection structure 失效
标题翻译：具有集成导通状态电压检测结构的大功率半导体器件
公开(公告)号：US5289028A
公开(公告)日：1994-02-22
申请号：US787166
申请日：1991-11-04
申请人： Lowell Clark , Robert B. Davies , David F. Mietus
发明人： Lowell Clark , Robert B. Davies , David F. Mietus
IPC分类号： H01L21/8234 , H01L27/02 , H01L27/04 , H01L27/06 , H01L29/78 , H01L23/62 , H01L23/58 , H01L29/74 , H01L29/90
CPC分类号： H01L29/7815 , H01L27/0251 , H01L27/0255 , H01L29/7803 , H01L29/7804 , H01L2924/0002
摘要： A semiconductor device having a power switch (12) and a saturation detection diode (13) formed in an upper surface of a semiconductor drift region (11) is provided. The saturation detector diode (13) and the power switch (12) are electrically coupled by the drift region (11). An external signal applied to the detector diode (13) forward biases the detector diode (13) when the drift region (11) potential is below a predetermined voltage and the detector diode (13) becomes reverse biased when the drift region (11) potential is greater than the predetermined voltage.
摘要翻译：提供了一种具有形成在半导体漂移区（11）的上表面中的功率开关（12）和饱和检测二极管（13）的半导体器件。饱和检测器二极管（13）和功率开关（12）由漂移区域（11）电耦合。当漂移区域（11）电位低于预定电压时，施加到检测器二极管（13）的外部信号向前偏置检测器二极管（13），并且当漂移区域（11）电位大于预定电压。

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