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21. 发明申请

US20130200444A1 SCHOTTKY BARRIER FIELD EFFECT TRANSISTOR WITH CARBON-CONTAINING INSULATION LAYER AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：具有含碳绝缘层的肖特基栅栏场效应晶体管及其制造方法
公开(公告)号：US20130200444A1
公开(公告)日：2013-08-08
申请号：US13583121
申请日：2012-03-22
申请人： Wei Wang , Jing Wang , Mei Zhao , Renrong Liang
发明人： Wei Wang , Jing Wang , Mei Zhao , Renrong Liang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/47 , H01L21/02115 , H01L21/02285 , H01L29/401 , H01L29/66636 , H01L29/66643 , H01L29/7839
摘要： A Schottky barrier field effect transistor with a carbon-containing insulation layer and a method for fabricating the same are provided. The Schottky barrier field effect transistor comprises: a substrate; a gate stack formed on the substrate; a metal source and a metal drain formed in the substrate on both sides of the gate stack respectively; and the carbon-containing insulation layer formed between the substrate and the metal source and between the substrate and the metal drain respectively, in which a material of the carbon-containing insulation layer is organic molecular chains containing an alkyl group.
摘要翻译：提供了具有含碳绝缘层的肖特基势垒场效应晶体管及其制造方法。肖特基势垒场效应晶体管包括：衬底; 形成在所述基板上的栅极堆叠; 金属源和金属漏极分别形成在栅极堆叠两侧的基板中; 以及分别形成在基板和金属源之间以及基板和金属排出口之间的含碳绝缘层，其中含碳绝缘层的材料是含有烷基的有机分子链。

22. 发明授权

US08890209B2 Strained GE-ON-insulator structure and method for forming the same 有权
标题翻译：应变GE-ON绝缘体结构及其形成方法
公开(公告)号：US08890209B2
公开(公告)日：2014-11-18
申请号：US13263227
申请日：2011-08-25
申请人： Jing Wang , Jun Xu , Lei Guo
发明人： Jing Wang , Jun Xu , Lei Guo
IPC分类号： H01L21/48 , H01L29/786 , H01L29/78
CPC分类号： H01L29/78684 , H01L29/7843 , H01L29/7846 , H01L29/7848 , H01L29/78603 , H01L29/78618
摘要： A strained Ge-on-insulator structure is provided, comprising: a silicon substrate, in which an oxide insulating layer is formed on a surface of the silicon substrate; a Ge layer formed on the oxide insulating layer, in which a first passivation layer is formed between the Ge layer and the oxide insulating layer; a gate stack formed on the Ge layer, a channel region formed below the gate stack, and a source and a drain formed on sides of the channel region; and a SiN stress cap layer covering the gate stack to produce a strain in the channel region. Further, a method for forming the strained Ge-on-insulator structure is also provided.
摘要翻译：提供了一种应变绝缘体上的结构，包括：硅衬底，其中在硅衬底的表面上形成氧化物绝缘层; 形成在所述氧化物绝缘层上的Ge层，其中在所述Ge层和所述氧化物绝缘层之间形成第一钝化层; 形成在Ge层上的栅极叠层，形成在栅叠层下方的沟道区，以及形成在沟道区的侧面上的源极和漏极; 以及覆盖栅极堆叠以在沟道区域中产生应变的SiN应力覆盖层。此外，还提供了用于形成应变的绝缘体上Ge的结构的方法。

23. 发明授权

US08796081B2 Semiconductor structure and method for forming the same 有权
标题翻译：半导体结构及其形成方法
公开(公告)号：US08796081B2
公开(公告)日：2014-08-05
申请号：US13499498
申请日：2011-09-07
申请人： Jing Wang , Jun Xu , Lei Guo
发明人： Jing Wang , Jun Xu , Lei Guo
IPC分类号： H01L21/338 , H01L31/00
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02658 , H01L29/1054
摘要： A semiconductor structure is provided, comprising: a Si substrate; a porous structure layer formed on the Si substrate, in which the porous structure layer has a flat surface and comprises a Si1-xGex layer with low Ge content; and a Ge-containing layer formed on the porous structure layer, in which the Ge containing layer comprises a Ge layer or a Si1-yGey layer with high Ge content and x≦y. Further, a method for forming the semiconductor structure is also provided.
摘要翻译：提供一种半导体结构，包括：Si衬底; 形成在Si基板上的多孔结构层，其中多孔结构层具有平坦表面并且包括具有低Ge含量的Si 1-x Ge x层; 以及形成在多孔结构层上的含Ge层，其中Ge含量层包括Ge层或具有高Ge含量的Si1-yGey层和x

24. 发明申请

US20120007146A1 METHOD FOR FORMING STRAINED LAYER WITH HIGH GE CONTENT ON SUBSTRATE AND SEMICONDUCTOR STRUCTURE 有权
标题翻译：在基板和半导体结构上形成具有高GE含量的应变层的方法
公开(公告)号：US20120007146A1
公开(公告)日：2012-01-12
申请号：US13126730
申请日：2010-11-29
申请人： Jing Wang , Jun Xu , Lei Guo
发明人： Jing Wang , Jun Xu , Lei Guo
IPC分类号： H01L29/78 , H01L21/20 , H01L21/265
CPC分类号： H01L21/76254 , H01L29/1054 , H01L29/78684 , H01L29/78687
摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure may comprise a substrate (110); an insulation layer (120) formed on the substrate (110); a strained layer (130) formed on the insulation layer (120); a strained layer (140) with high Ge content formed on the strained layer (130); and a gate stack (160) formed on the strained layer (140) with high Ge content.
摘要翻译：提供半导体结构及其形成方法。半导体结构可以包括衬底（110）; 形成在所述基板（110）上的绝缘层（120）; 形成在绝缘层（120）上的应变层（130）; 在应变层（130）上形成具有高Ge含量的应变层（140）; 以及形成在具有高Ge含量的应变层（140）上的栅极堆叠（160）。

25. 发明授权

US08786017B2 Strained Ge-on-insulator structure and method for forming the same 有权
标题翻译：应变绝缘体上的结构及其形成方法
公开(公告)号：US08786017B2
公开(公告)日：2014-07-22
申请号：US13263222
申请日：2011-08-25
申请人： Jing Wang , Jun Xu , Lei Guo
发明人： Jing Wang , Jun Xu , Lei Guo
IPC分类号： H01L27/12
CPC分类号： H01L29/78684 , H01L29/7846
摘要： A strained Ge-on-insulator structure is provided, comprising: a silicon substrate, in which an oxide insulating layer is formed on a surface of the silicon substrate; a Ge layer formed on the oxide insulating layer, in which a first passivation layer is formed between the Ge layer and the oxide insulating layer; a gate stack formed on the Ge layer, a channel region formed below the gate stack, and a source and a drain formed on sides of the channel region; and a plurality of shallow trench isolation structures extending into the silicon substrate and filled with an insulating dielectric material to produce a strain in the channel region. Further, a method for forming the strained Ge-on-insulator structure is also provided.
摘要翻译：提供了一种应变绝缘体上的结构，包括：硅衬底，其中在硅衬底的表面上形成氧化物绝缘层; 形成在所述氧化物绝缘层上的Ge层，其中在所述Ge层和所述氧化物绝缘层之间形成第一钝化层; 形成在Ge层上的栅极叠层，形成在栅叠层下方的沟道区，以及形成在沟道区的侧面上的源极和漏极; 以及延伸到硅衬底中并填充有绝缘电介质材料以在沟道区域中产生应变的多个浅沟槽隔离结构。此外，还提供了用于形成应变的绝缘体上Ge的结构的方法。

26. 发明授权

US08772873B2 Ge-on-insulator structure and method for forming the same 有权
标题翻译：绝缘体上的结构及其形成方法
公开(公告)号：US08772873B2
公开(公告)日：2014-07-08
申请号：US13201903
申请日：2011-07-27
申请人： Jing Wang , Jun Xu , Lei Guo
发明人： Jing Wang , Jun Xu , Lei Guo
IPC分类号： H01L27/12 , H01L21/336 , H01L29/786 , H01L21/28 , H01L21/762 , H01L29/66
CPC分类号： H01L29/78684 , H01L21/28255 , H01L21/76256 , H01L29/66742 , H01L29/78603
摘要： A method for forming a Ge-on-insulator structure is provided, comprising steps of: forming a Ge layer (1200) on a substrate (2000); treating a first surface of the Ge layer (1200) to form a first semiconducting metal-germanide passivation layer (1300); bonding the first semiconducting metal-germanide passivation layer (1300) with a silicon substrate (1100), wherein on a surface of the silicon substrate (1100) an oxide insulating layer is formed; and removing the substrate (2000). Further, a Ge-on-insulator structure formed by the method is also provided.
摘要翻译：提供一种形成绝缘体上Ge结构的方法，包括以下步骤：在衬底（2000）上形成Ge层（1200）; 处理所述Ge层（1200）的第一表面以形成第一半导体金属 - 锗化物钝化层（1300）; 将第一半导体金属 - 锗化物钝化层（1300）与硅衬底（1100）接合，其中在所述硅衬底（1100）的表面上形成氧化物绝缘层; 并移除基板（2000）。此外，还提供了通过该方法形成的绝缘体上Ge结构。

27. 发明申请

US20120032231A1 MOS TRANSISTOR STRUCTURE WITH IN-SITU DOPED SOURCE AND DRAIN AND METHOD FOR FORMING THE SAME 有权
标题翻译：具有现场输入源和漏极的MOS晶体管结构及其形成方法
公开(公告)号：US20120032231A1
公开(公告)日：2012-02-09
申请号：US13132768
申请日：2011-01-19
申请人： Jing Wang , Lei Guo , Jun Xu
发明人： Jing Wang , Lei Guo , Jun Xu
IPC分类号： H01L29/772 , H01L21/336
CPC分类号： H01L29/1054 , H01L29/66636 , H01L29/7833 , H01L29/7848
摘要： A MOS transistor structure with an in-situ doped source and/or drain and a method for forming the same are provided. The method comprises steps of: providing a substrate; forming a high Ge content layer on the substrate; forming a gate stack on the high Ge content layer and forming a side wall of one or more layers on both sides of the gate stack; etching the high Ge content layer to form a source region and/or a drain region; and forming a source and/or a drain in the source region and/or the drain region respectively by a low-temperature selective epitaxy, and introducing a doping gas during the low-temperature selective epitaxy to heavily dope the source and/or the drain and to in-situ activate a doping element.
摘要翻译：提供具有原位掺杂源极和/或漏极的MOS晶体管结构及其形成方法。该方法包括以下步骤：提供衬底; 在所述基板上形成高Ge含量层; 在高Ge含量层上形成栅极叠层，并在栅叠层的两侧形成一层或多层的侧壁; 蚀刻高Ge含量层以形成源区和/或漏区; 以及通过低温选择性外延分别在源区和/或漏区中形成源极和/或漏极，并且在低温选择性外延期间引入掺杂气体以使源极和/或漏极并原位激活掺杂元素。

28. 发明授权

US08704306B2 Strained Ge-on-insulator structure and method for forming the same 有权
标题翻译：应变绝缘体上的结构及其形成方法
公开(公告)号：US08704306B2
公开(公告)日：2014-04-22
申请号：US13263236
申请日：2011-08-25
申请人： Jing Wang , Jun Xu , Lei Guo
发明人： Jing Wang , Jun Xu , Lei Guo
IPC分类号： H01L27/12
CPC分类号： H01L29/78684 , H01L21/28255 , H01L29/165 , H01L29/7843 , H01L29/7846 , H01L29/7848
摘要： A strained Ge-on-insulator structure is provided, comprising: a silicon substrate, in which an oxide insulating layer is formed on a surface of the silicon substrate; a Ge layer formed on the oxide insulating layer, in which a first passivation layer is formed between the Ge layer and the oxide insulating layer; a gate stack formed on the Ge layer; and a channel region formed below the gate stack, and a source and a drain formed on sides of the channel region, in which the source and the drain are a SixGe1-x:C source and a SixGe1-x:C drain respectively to produce a tensile strain in the channel region, in which x is within a range from 0 to 1 and a content of C is within a range from 0 to 7.5%. Further, a method for forming the strained Ge-on-insulator structure is also provided.
摘要翻译：提供了一种应变绝缘体上的结构，包括：硅衬底，其中在硅衬底的表面上形成氧化物绝缘层; 形成在所述氧化物绝缘层上的Ge层，其中在所述Ge层和所述氧化物绝缘层之间形成第一钝化层; 形成在Ge层上的栅叠层; 以及形成在栅极堆叠下方的沟道区，以及形成在沟道区的侧面上的源极和漏极，源极和漏极分别为SixGe1-x：C源极和SixGe1-x：C沟道，以产生在通道区域中的拉伸应变，其中x在0至1的范围内，并且C的含量在0至7.5％的范围内。此外，还提供了用于形成应变的绝缘体上Ge的结构的方法。

29. 发明申请

US20130207161A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US20130207161A1
公开(公告)日：2013-08-15
申请号：US13499661
申请日：2011-06-27
申请人： Jing Wang , Jun Xu , Lei Guo
发明人： Jing Wang , Jun Xu , Lei Guo
IPC分类号： H01L29/267 , H01L21/02
CPC分类号： H01L29/267 , H01L21/02381 , H01L21/0245 , H01L21/0251 , H01L21/02538 , H01L21/0262 , H01L21/02639 , H01L21/02647
摘要： A semiconductor device and a method for forming the same are provided. The semiconductor device comprises: a substrate (1); an insulating layer (2), formed on the substrate (1) and having a trench (21) to expose an upper surface of the substrate (1); a first buffer layer (3), formed on the substrate (1) and in the trench (21); and a compound semiconductor layer (4), formed on the first buffer layer (3), wherein an aspect ratio of the trench (21) is larger than 1 and smaller than 10, wherein the first buffer layer (3) is formed by a low-temperature reduced pressure chemical vapor deposition process at a temperature between 200° C. and 500° C., and wherein the compound semiconductor layer (4) is formed by a low-temperature metal organic chemical vapor deposition process at a temperature between 200° C. and 600° C.
摘要翻译：提供半导体器件及其形成方法。半导体器件包括：衬底（1）; 形成在所述基板（1）上并具有用于露出所述基板（1）的上表面的沟槽（21）的绝缘层（2）; 形成在所述基板（1）和所述沟槽（21）中的第一缓冲层（3）; 和形成在第一缓冲层（3）上的化合物半导体层（4），其中沟槽（21）的纵横比大于1且小于10，其中第一缓冲层（3）由在200℃至500℃之间的温度下进行低温减压化学气相沉积工艺，其中化合物半导体层（4）通过低温金属有机化学气相沉积工艺在200℃ ℃和600℃

30. 发明授权

US08440550B2 Method for forming strained layer with high Ge content on substrate and semiconductor structure 有权
标题翻译：在基板和半导体结构上形成具有高Ge含量的应变层的方法
公开(公告)号：US08440550B2
公开(公告)日：2013-05-14
申请号：US13126730
申请日：2010-11-29
申请人： Jing Wang , Jun Xu , Lei Guo
发明人： Jing Wang , Jun Xu , Lei Guo
IPC分类号： H01L29/78 , H01L21/20 , H01L21/265
CPC分类号： H01L21/76254 , H01L29/1054 , H01L29/78684 , H01L29/78687
摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure may comprise a substrate (110); an insulation layer (120) formed on the substrate (110); a strained layer (130) formed on the insulation layer (120); a strained layer (140) with high Ge content formed on the strained layer (130); and a gate stack (160) formed on the strained layer (140) with high Ge content.
摘要翻译：提供半导体结构及其形成方法。半导体结构可以包括衬底（110）; 形成在所述基板（110）上的绝缘层（120）; 形成在绝缘层（120）上的应变层（130）; 在应变层（130）上形成具有高Ge含量的应变层（140）; 以及形成在具有高Ge含量的应变层（140）上的栅极堆叠（160）。

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