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21. 发明申请

US20090149028A1 METHODS AND APPARATUS FOR A HYBRID CAPACITIVELY-COUPLED AND AN INDUCTIVELY-COUPLED PLASMA PROCESSING SYSTEM 有权
标题翻译：混合电容耦合和电感耦合等离子体处理系统的方法和装置
公开(公告)号：US20090149028A1
公开(公告)日：2009-06-11
申请号：US12237179
申请日：2008-09-24
申请人： Alexei Marakhtanov , Eric Hudson , Rajinder Dhindsa , Neil Benjamin
发明人： Alexei Marakhtanov , Eric Hudson , Rajinder Dhindsa , Neil Benjamin
IPC分类号： H01L21/3065
CPC分类号： H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32532 , H01J37/3266 , H01J37/32669 , H01J2237/332 , H01J2237/334
摘要： A capacitively-coupled plasma (CCP) processing system having a plasma processing chamber for processing a substrate is provided. The capacitively-coupled Plasma (CCP) processing system includes an upper electrode and a lower electrode for processing the substrate, which is disposed on the lower electrode during plasma processing. The capacitively-coupled Plasma (CCP) processing system also includes an array of inductor coils arrangement configured to inductively sustain plasma in a gap between the upper electrode and the lower electrode.
摘要翻译：提供具有用于处理衬底的等离子体处理室的电容耦合等离子体（CCP）处理系统。电容耦合等离子体（CCP）处理系统包括用于处理衬底的上电极和下电极，其在等离子体处理期间设置在下电极上。电容耦合等离子体（CCP）处理系统还包括电感线圈布置阵列，其被配置为在上电极和下电极之间的间隙中感应维持等离子体。

22. 发明授权

US08222157B2 Hybrid RF capacitively and inductively coupled plasma source using multifrequency RF powers and methods of use thereof 有权
标题翻译：使用多频RF功率的混合RF电容和电感耦合等离子体源及其使用方法
公开(公告)号：US08222157B2
公开(公告)日：2012-07-17
申请号：US12945314
申请日：2010-11-12
申请人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
发明人： Alexei Marakhtanov , Rajinder Dhindsa , Eric Hudson , Andreas Fischer
IPC分类号： H01L21/461
CPC分类号： H01J37/321 , H01J37/32091 , H01J2237/03
摘要： A device for inductively confining capacitively coupled RF plasma formed in a plasma processing apparatus. The apparatus includes an upper electrode and a lower electrode that is adapted to support a substrate and to generate the plasma between the substrate and the upper electrode. The device includes a dielectric support ring that concentrically surrounds the upper electrode and a plurality of coil units mounted on the dielectric support ring. Each coil unit includes a ferromagnetic core positioned along a radial direction of the dielectric support ring and at least one coil wound around each ferromagnetic core. The coil units generate, upon receiving RF power from an RF power source, electric and magnetic fields that reduce the number of charged particles of the plasma diffusing away from the plasma.
摘要翻译：用于感应地限制在等离子体处理装置中形成的电容耦合RF等离子体等离子体的装置。该装置包括上电极和下电极，其适于支撑衬底并在衬底和上电极之间产生等离子体。该装置包括同心地围绕上电极的电介质支撑环和安装在电介质支撑环上的多个线圈单元。每个线圈单元包括沿着电介质支撑环的径向定位的铁磁芯和缠绕在每个铁磁芯周围的至少一个线圈。线圈单元在从RF电源接收到RF功率时产生电场和磁场，其减少等离子体的带电粒子的数量远离等离子体扩散。

23. 发明申请

US20110024046A1 Apparatus and Method for Controlling Plasma Potential 审中-公开
标题翻译：用于控制等离子体电位的装置和方法
公开(公告)号：US20110024046A1
公开(公告)日：2011-02-03
申请号：US12905046
申请日：2010-10-14
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： H01L21/306
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The lower electrode is also defined to support a semiconductor wafer in exposure to the plasma. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is defined by a doped semiconductor material. A doping concentration within the upper electrode varies radially from a center to a periphery of the upper electrode. The electric potential of the upper electrode influences an electric potential of the plasma within the chamber.
摘要翻译：提供了一种用于半导体晶片等离子体处理的装置。该装置包括具有下电极和设置在其中的上电极的腔室。下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。下电极也被限定为支持暴露于等离子体的半导体晶片。上电极设置在下电极的上方并与之隔开的关系。上电极由掺杂的半导体材料限定。上电极内的掺杂浓度从上电极的中心向周边径向变化。上电极的电位影响室内等离子体的电位。

24. 发明申请

US20060118518A1 High aspect ratio etch using modulation of RF powers of various frequencies 有权
公开(公告)号：US20060118518A1
公开(公告)日：2006-06-08
申请号：US10737022
申请日：2003-12-15
申请人： Camelia Rusu , Rajinder Dhindsa , Eric Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
发明人： Camelia Rusu , Rajinder Dhindsa , Eric Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
IPC分类号： B44C1/22 , H01L21/306
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/31116 , H01L21/67063 , H01L21/67069
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.

25. 发明申请

US20070012659A1 High aspect ratio etch using modulation of RF powers of various frequencies 有权
标题翻译：使用各种频率的RF功率调制的高纵横比蚀刻
公开(公告)号：US20070012659A1
公开(公告)日：2007-01-18
申请号：US11525602
申请日：2006-09-21
申请人： Camelia Rusu , Rajinder Dhindsa , Eric Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
发明人： Camelia Rusu , Rajinder Dhindsa , Eric Hudson , Mukund Srinivasan , Lumin Li , Felix Kozakevich
IPC分类号： C03C25/68 , C23F1/00 , H01L21/306 , B44C1/22
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32155 , H01J2237/3347 , H01L21/31116 , H01L21/67063 , H01L21/67069
摘要： A method for etching a high aspect ratio feature through a mask into a layer to be etched over a substrate is provided. The substrate is placed in a process chamber, which is able to provide RF power at a first frequency, a second frequency different than the first frequency, and a third frequency different than the first and second frequency. An etchant gas is provided to the process chamber. A first etch step is provided, where the first frequency, the second frequency, and the third frequency are at power settings for the first etch step. A second etch step is provided, where the first frequency, the second frequency, and the third frequency are at a different power setting.
摘要翻译：提供了一种通过掩模将高宽比特征蚀刻到衬底上待蚀刻的层中的方法。基板被放置在处理室中，该处理室能够提供第一频率的RF功率，不同于第一频率的第二频率和与第一和第二频率不同的第三频率。向处理室提供蚀刻剂气体。提供了第一蚀刻步骤，其中第一频率，第二频率和第三频率处于第一蚀刻步骤的功率设置。提供了第二蚀刻步骤，其中第一频率，第二频率和第三频率处于不同的功率设置。

26. 发明申请

US20080006205A1 Apparatus and Method for Controlling Plasma Potential 审中-公开
标题翻译：用于控制等离子体电位的装置和方法
公开(公告)号：US20080006205A1
公开(公告)日：2008-01-10
申请号：US11456545
申请日：2006-07-10
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： An apparatus is provided for semiconductor wafer plasma processing. The apparatus includes a chamber having a lower electrode and an upper electrode disposed therein. The lower electrode is defined to transmit a radiofrequency current through the chamber to generate a plasma within the chamber. The upper electrode is disposed above the lower electrode and is electrically isolated from the chamber. A voltage source is connected to the upper electrode. The voltage source is defined to control an electric potential of the upper electrode relative to the chamber. The electric potential of the upper electrode as controlled by the voltage source is capable of influencing an electric potential of the plasma to be generated between the lower and upper electrodes.
摘要翻译：提供了一种用于半导体晶片等离子体处理的装置。该装置包括具有下电极和设置在其中的上电极的腔室。下电极被定义为传输射频电流通过腔室以在腔室内产生等离子体。上电极设置在下电极的上方，并与腔电隔离。电压源连接到上电极。电压源被定义为控制上电极相对于腔室的电位。由电压源控制的上电极的电位能够影响在下电极和上电极之间产生的等离子体的电位。

27. 发明授权

US09111724B2 Apparatus and method for controlling plasma potential 有权
标题翻译：用于控制等离子体电位的装置和方法
公开(公告)号：US09111724B2
公开(公告)日：2015-08-18
申请号：US12905041
申请日：2010-10-14
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： H01J7/24 , C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.
摘要翻译：腔室包括下电极和上电极。下电极被限定为透射射频电流通过腔室并且支撑半导体晶片暴露于腔室内的等离子体。上电极设置在下电极的上方并与之隔开的关系。上部电极与腔室电气隔离，并且由中心部分和一个或多个同心地设置在中心部分外部的环形部分限定。上部电极的相邻部分通过电介质材料彼此电分离。多个电压源分别连接到上电极部分。每个电压源被定义为相对于腔室控制与其连接的上电极部分的电位。每个上电极部分的电位影响室内的等离子体的电位。

28. 发明申请

US20110024045A1 Apparatus and Method for Controlling Plasma Potential 审中-公开
标题翻译：用于控制等离子体电位的装置和方法
公开(公告)号：US20110024045A1
公开(公告)日：2011-02-03
申请号：US12905041
申请日：2010-10-14
申请人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
发明人： Douglas Keil , Lumin Li , Reza Sadjadi , Eric Hudson , Eric Lenz , Rajinder Dhindsa
IPC分类号： H01L21/306
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32174 , H01J37/32532
摘要： A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.
摘要翻译：腔室包括下电极和上电极。下电极被限定为透射射频电流通过腔室并且支撑半导体晶片暴露于腔室内的等离子体。上电极设置在下电极的上方并与之隔开的关系。上部电极与腔室电气隔离，并且由中心部分和一个或多个同心地设置在中心部分外部的环形部分限定。上部电极的相邻部分通过电介质材料彼此电分离。多个电压源分别连接到上电极部分。每个电压源被定义为相对于腔室控制与其连接的上电极部分的电位。每个上电极部分的电位影响室内的等离子体的电位。

29. 发明申请

US20050006028A1 Magnetic enhancement for mechanical confinement of plasma 有权
标题翻译：磁力增强用于等离子体的机械约束
公开(公告)号：US20050006028A1
公开(公告)日：2005-01-13
申请号：US10600191
申请日：2003-06-20
申请人： Douglas Keil , Lumin Li , Eric Hudson , Reza Sadjadi , Eric Lenz , Rajinder Dhindsa , Ji Kim
发明人： Douglas Keil , Lumin Li , Eric Hudson , Reza Sadjadi , Eric Lenz , Rajinder Dhindsa , Ji Kim
IPC分类号： H01J37/32 , H05H1/02
CPC分类号： H01J37/3266 , H01J37/32431 , H01J37/32623
摘要： A plasma processing apparatus for processing a substrate is provided. A plasma processing chamber with chamber walls is provided. A substrate support is provided within the chamber walls. At least one confinement ring is provided, where the confinement ring and the substrate support define a plasma volume. A magnetic source for generating a magnetic field for magnetically enhancing physical confinement provided by the at least one confinement ring is provided.
摘要翻译：提供了一种用于处理衬底的等离子体处理装置。提供具有室壁的等离子体处理室。在室壁内提供衬底支撑件。提供至少一个限制环，其中限制环和衬底支撑件限定等离子体体积。提供了一种用于产生用于磁力增强由至少一个限制环提供的物理限制的磁场的磁源。

30. 发明申请

US20090277584A1 APPARATUS FOR DETERMINING THE ENDPOINT OF A CLEANING OR CONDITIONING PROCESS IN A PLASMA PROCESSING SYSTEM 失效
标题翻译：用于确定等离子体处理系统中的清洁或调节过程的端点的装置
公开(公告)号：US20090277584A1
公开(公告)日：2009-11-12
申请号：US12504833
申请日：2009-07-17
申请人： Eric Hudson , Douglas Keil , Alexei Marakhtanov
发明人： Eric Hudson , Douglas Keil , Alexei Marakhtanov
IPC分类号： C23F1/08
CPC分类号： H01J37/32963 , H01J37/32935
摘要： An apparatus for determining an endpoint of a process by measuring a thickness of a layer is provided. The layer is disposed on the surface by a prior process. The apparatus includes means for providing a sensor that is coplanar with the surface, wherein the sensor is configured to measure the thickness. The apparatus also includes means for exposing the plasma chamber to a plasma, wherein the thickness is changed by the exposing, and means for determining the thickness as a function of time. The apparatus further includes means for ascertaining a steady state condition in the thickness, the steady state condition being characterized by a substantially stable measurement of the thickness, a start of the steady state condition representing the endpoint.
摘要翻译：提供了一种通过测量层的厚度来确定工艺的端点的装置。该层通过先前的工艺设置在表面上。该装置包括用于提供与表面共面的传感器的装置，其中传感器被配置成测量厚度。该装置还包括用于将等离子体室暴露于等离子体的装置，其中通过曝光改变厚度，以及用于确定作为时间的函数的厚度的装置。该装置还包括用于确定厚度中的稳态条件的装置，稳态条件的特征在于厚度的基本上稳定的测量，表示端点的稳态条件的开始。

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