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21. 发明申请

US20050012887A1 Display device 有权
标题翻译：显示设备
公开(公告)号：US20050012887A1
公开(公告)日：2005-01-20
申请号：US10884945
申请日：2004-07-07
申请人： Jun Koyama , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Shunpei Yamazaki
发明人： Jun Koyama , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Shunpei Yamazaki
IPC分类号： G02F1/1368 , G02F1/133 , G02F1/1362 , G09F9/00 , G09F9/30 , G09G3/20 , G09G3/30 , G09G3/36 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786 , H01L51/50 , G02F1/1345
CPC分类号： H01L27/1288 , G02F1/13454 , G02F1/13624 , G09G3/20 , G09G2300/0408 , G09G2300/08 , G09G2310/0289 , H01L27/1214 , H01L29/04 , H01L29/78669 , H01L29/78678
摘要： When semi-amorphous TFTs are used for forming a signal line driver circuit and a pixel, a large amplitude is required for driving the pixel, and a large power supply voltage is thus needed. On the other hand, when a shift register is made up of transistors having a single conductivity, a bootstrap circuit is required, and a voltage over a power supply is applied to a specific element. Therefore, not both the driving amplitude and the reliability can be achieved with a single power supply. According to the invention, a level shifter having a single conductivity is provided to solve such a problem.
摘要翻译：当使用半非晶TFT来形成信号线驱动电路和像素时，驱动像素需要大的幅度，因此需要大的电源电压。另一方面，当移位寄存器由具有单一导电性的晶体管构成时，需要自举电路，并且将电源上的电压施加到特定元件。因此，不能通过单个电源实现驱动振幅和可靠性。根据本发明，提供具有单一电导率的电平移位器来解决这个问题。

22. 发明授权

US06278164B1 Semiconductor device with gate insulator formed of high dielectric film 失效
标题翻译：具有栅极绝缘体的半导体器件由高介电膜形成
公开(公告)号：US06278164B1
公开(公告)日：2001-08-21
申请号：US08996704
申请日：1997-12-23
申请人： Katsuhiko Hieda , Yoshitaka Tsunashima , Keitaro Imai , Tomonori Aoyama
发明人： Katsuhiko Hieda , Yoshitaka Tsunashima , Keitaro Imai , Tomonori Aoyama
IPC分类号： H01L2976
CPC分类号： H01L29/513 , H01L29/4983 , H01L29/516 , H01L29/517 , H01L29/66537 , H01L29/66545 , H01L29/78391
摘要： A p-type silicon substrate has an element isolation region of an STI structure formed therein. A transistor region isolated by the isolation region has a n-type source/drain diffusion layer. Further, a p-channel impurity layer is formed substantially only in its channel region for controlling its threshold voltage (Vth). A gate insulator film consisting of a high dielectric film is formed on the channel region with an Si3N4 film interposed therebetween. A metal gate electrode having its bottom and side surfaces covered with the gate insulator film is provided in a self-alignment manner with respect to the source/drain diffusion layer.
摘要翻译： p型硅衬底具有形成在其中的STI结构的元件隔离区域。由隔离区隔离的晶体管区域具有n型源极/漏极扩散层。此外，p沟道杂质层基本上仅在其沟道区域中形成，用于控制其阈值电压（Vth）。在沟道区域上形成由高介电膜构成的栅极绝缘膜，其间插入有Si 3 N 4膜。相对于源极/漏极扩散层以自对准的方式设置具有被栅极绝缘膜覆盖的底部和侧面的金属栅电极。

23. 发明授权

US5686151A Method of forming a metal oxide film 失效
标题翻译：形成金属氧化膜的方法
公开(公告)号：US5686151A
公开(公告)日：1997-11-11
申请号：US603198
申请日：1996-02-20
申请人： Keitaro Imai , Masahiro Kiyotoshi , Haruo Okano
发明人： Keitaro Imai , Masahiro Kiyotoshi , Haruo Okano
IPC分类号： C23C16/40 , H01L21/8242 , H01L21/8246 , B05D3/06 , C23C16/00
CPC分类号： C23C16/408 , H01L27/11502 , H01L27/11507 , Y10S505/734
摘要： Disclosed is method of forming a metal oxide film including the steps of introducing a gas containing a metal compound having at least one element selected from the group consisting of carbon and a halogen element, into a process chamber accommodating a substrate, introducing a gas containing a compound having a hydroxyl group into the process chamber, introducing a gas containing oxygen which has been converted to a plasma state, into the process chamber, and forming the metal oxide film on the substrate using the gas containing a metal compound, the gas containing a compound having a hydroxyl group, and the gas containing oxygen which has been converted to a plasma state.
摘要翻译：公开了形成金属氧化物膜的方法，包括以下步骤：将含有选自碳和卤素元素的至少一种元素的金属化合物的气体引入容纳基板的处理室中，引入含有具有羟基的化合物进入处理室，将已经转化为等离子体状态的含氧气体引入处理室，并使用含有金属化合物的气体在基板上形成金属氧化物膜，该气体含有具有羟基的化合物和已经转化为等离子体状态的含氧气体。

24. 发明授权

US09202546B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09202546B2
公开(公告)日：2015-12-01
申请号：US12910908
申请日：2010-10-25
申请人： Shunpei Yamazaki , Keitaro Imai , Jun Koyama
发明人： Shunpei Yamazaki , Keitaro Imai , Jun Koyama
IPC分类号： H01L29/10 , G11C11/404 , G11C11/405 , G11C16/02 , H01L21/8258 , H01L27/06 , H01L27/088 , H01L27/105 , H01L27/115 , H01L27/12 , H01L27/092
CPC分类号： H01L27/10802 , G11C11/404 , G11C11/405 , G11C16/02 , H01L21/8258 , H01L27/0688 , H01L27/088 , H01L27/0922 , H01L27/105 , H01L27/1156 , H01L27/12 , H01L27/1225 , H01L29/7869
摘要： The semiconductor device includes: a transistor having an oxide semiconductor layer; and a logic circuit formed using a semiconductor material other than an oxide semiconductor. One of a source electrode and a drain electrode of the transistor is electrically connected to at least one input of the logic circuit, and at least one input signal is applied to the logic circuit through the transistor. The off-current of the transistor is preferably 1×10−13 A or less.
摘要翻译：半导体器件包括：具有氧化物半导体层的晶体管; 以及使用除了氧化物半导体之外的半导体材料形成的逻辑电路。晶体管的源电极和漏电极中的一个电连接到逻辑电路的至少一个输入端，并且至少一个输入信号通过晶体管施加到逻辑电路。晶体管的截止电流优选为1×10-13A以下。

25. 发明授权

US07847873B2 Display device and manufacturing method thereof 失效
标题翻译：显示装置及其制造方法
公开(公告)号：US07847873B2
公开(公告)日：2010-12-07
申请号：US11451071
申请日：2006-06-12
申请人： Keitaro Imai
发明人： Keitaro Imai
IPC分类号： G02F1/136
CPC分类号： G02F1/136286 , G02F2001/136295 , H01L27/1292
摘要： Conventionally, photolithography and anisotropic etching are performed to form a plug between an electrode and a wiring, etc., thereby increasing the number of steps, getting the throughput worse, and producing unnecessary materials. To solve the problems, the present invention provides a method for manufacturing a display device, including the formation steps of a conductive layer or wirings, and a contact plug that can treat a larger substrate. In the case of forming a plug for electrically connecting conductive patterns comprising plural layers, a pillar made of a conductor is formed over a base conductive layer pattern, and then, after an insulating film is formed over the entire surface, the insulating film is etched back to expose the conductor pillar, and a conductive pattern in an upper layer is formed by ink jetting. In this case, when the conductor pillar is processed, a resist to be a mask can be formed in itself by ink jetting.
摘要翻译：通常，进行光刻和各向异性蚀刻以在电极和布线等之间形成插塞，从而增加步骤数量，使吞吐量更差并且产生不必要的材料。为了解决这些问题，本发明提供一种显示装置的制造方法，其包括导电层或布线的形成步骤以及可处理较大基板的接触塞。在形成用于电连接包括多层的导电图案的插头的情况下，在基底导电层图案上形成由导体制成的柱，然后在整个表面上形成绝缘膜之后，蚀刻绝缘膜背面露出导体柱，并且通过喷墨形成上层中的导电图案。在这种情况下，当处理导体柱时，可以通过喷墨形成本身作为掩模的抗蚀剂。

26. 发明申请

US20080160642A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20080160642A1
公开(公告)日：2008-07-03
申请号：US12046229
申请日：2008-03-11
申请人： Hiroshi Itokawa , Keitaro Imai , Koji Yamakawa , Bum-ki Moon
发明人： Hiroshi Itokawa , Keitaro Imai , Koji Yamakawa , Bum-ki Moon
IPC分类号： H01L21/8234
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/55 , H01L28/65 , H01L28/91
摘要： A semiconductor device according to an aspect of the invention comprises a semiconductor substrate, a conductive plug which is connected to an active region of a transistor formed on the semiconductor substrate, a metal silicide film which covers a bottom surface portion and side surface portion of the conductive plug, and an electrode structure which is formed on the conductive plug.
摘要翻译：根据本发明的一个方面的半导体器件包括半导体衬底，连接到形成在半导体衬底上的晶体管的有源区的导电插塞，覆盖半导体衬底的底表面部分和侧表面部分的金属硅化物膜导电插头和形成在导电插头上的电极结构。

27. 发明授权

US07393081B2 Droplet jetting device and method of manufacturing pattern 有权
标题翻译：液滴喷射装置及其制造方法
公开(公告)号：US07393081B2
公开(公告)日：2008-07-01
申请号：US10879800
申请日：2004-06-29
申请人： Shinji Maekawa , Osamu Nakamura , Keitaro Imai
发明人： Shinji Maekawa , Osamu Nakamura , Keitaro Imai
IPC分类号： B41J2/15 , H01L21/00
CPC分类号： B41J2/2125 , B41J2/1433 , B41J2/145 , B41J2002/14475 , H05K3/1241
摘要： The present invention provides a method of manufacturing a pattern with a flattened surface and a droplet jetting device which can provides the pattern with a flattened surface. A droplet jetting means of the present invention comprises a droplet jetting means having a plurality of nozzles arranged in each row, each of the plurality of nozzles has a plurality of discharge ports aligned in an axial direction, and diameters of the discharge ports for the plurality of nozzles differ from row to row. According to one aspect of the present invention, a droplet jetting means including a plurality of nozzles arranged in two rows with a plurality of discharge ports aligned in an axial direction in each row, comprising steps of: forming a first pattern by jetting a composition through the plurality of nozzles in the first row; and forming a second pattern by selectively jetting the composition through the plurality of nozzles in the second row, wherein discharge amounts the composition jetted from each of the plurality of nozzles aligned in the first row and the second row differ from each other.
摘要翻译：本发明提供一种制造具有平坦表面的图案的方法和能够为图案提供扁平表面的液滴喷射装置。本发明的液滴喷射装置包括具有布置在每排中的多个喷嘴的液滴喷射装置，多个喷嘴中的每一个喷嘴具有沿轴向排列的多个排出口，并且用于多个喷嘴的排出口的直径的喷嘴不同。根据本发明的一个方面，一种液滴喷射装置，包括排列成两排的多个喷嘴，多个排出口在每一排沿轴向排列，包括以下步骤：通过喷射组合物形成第一图案第一排中的多个喷嘴; 并且通过选择性地喷射组合物通过第二排中的多个喷嘴形成第二图案，其中排出量从在第一排和第二排中排列的多个喷嘴中的每一个喷射的组合物彼此不同。

28. 发明申请

US20070272149A1 Liquid drop jetting apparatus using charged beam and method for manufacturing a pattern using the apparatus 审中-公开
标题翻译：使用带电束的液滴喷射装置和使用该装置制造图案的方法
公开(公告)号：US20070272149A1
公开(公告)日：2007-11-29
申请号：US11818558
申请日：2007-06-14
申请人： Keitaro Imai , Shunpei Yamazaki
发明人： Keitaro Imai , Shunpei Yamazaki
IPC分类号： B05B5/025
CPC分类号： B05B5/053 , B05B5/025 , B05B12/12 , B05C5/0212 , B05C5/0279
摘要： The invention drastically improves the accuracy of adhesion position of a liquid drop discharged by a liquid drop discharge method and makes it possible to form a fine and highly accurate pattern directly on a substrate. Therefore, one object of the invention is to provide a method for manufacturing a wiring, a conductive layer and a display device that can respond to upsizing of a substrate. Moreover, another object of the invention is to provide a method for manufacturing a wiring, a conductive layer and a display device that can improve throughput and the efficiency of use of material. The invention can improve the accuracy of adhesion position of a liquid drop drastically at the time of patterning a resist material, a wiring material, or the like directly by the liquid drop discharge method mainly on a substrate having an insulating surface. To be more specific, the invention is characterized in that: a liquid adhesion position on the surface of the substrate is scanned with a charged beam in accordance with a desired pattern immediately before a liquid drop is discharged by the liquid drop discharge method; and immediately thereafter, the liquid drop is charged with an electric charge of a polarity opposite to the charged beam and is discharged to improve the controllability of the adhesion position of the liquid drop to a great extent.
摘要翻译：本发明通过液滴排出方法大大提高了通过液滴排出方法排出的液滴的粘附位置的精度，并且可以直接在基板上形成精细且高精度的图案。因此，本发明的一个目的是提供一种用于制造能够对衬底的大尺寸进行响应的布线，导电层和显示装置的制造方法。此外，本发明的另一个目的是提供一种可以提高生产率和材料使用效率的布线，导电层和显示装置的制造方法。本发明可以通过主要在具有绝缘表面的基板上的液滴排放法直接图案化抗蚀剂材料，布线材料等时，提高液滴的粘附位置的精度。更具体地说，本发明的特征在于：在通过液滴排出方法排出液滴之前，根据期望的模式，利用带电束对基板表面上的液体粘附位置进行扫描; 此后，液滴用与带电束相反的极性的电荷充电并被排出，以提高液滴的粘附位置的可控性。

29. 发明申请

US20070212828A1 Method for manufacturing semiconductor device 有权
公开(公告)号：US20070212828A1
公开(公告)日：2007-09-13
申请号：US11797533
申请日：2007-05-04
申请人： Shunpei Yamazaki , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura
发明人： Shunpei Yamazaki , Keitaro Imai , Shinji Maekawa , Makoto Furuno , Osamu Nakamura
IPC分类号： H01L21/84
CPC分类号： H01L27/12 , H01L27/1292 , H01L29/42384 , H01L29/66765
摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device of which manufacturing process is simplified by improving usage rate of a material. A method for manufacturing a semiconductor device of the invention comprises the steps of: forming gate electrodes with a droplet discharge method on a substrate having an insulating surface; laminating gate insulating layers, semiconductor layers, and a semiconductor layer containing one-conductivity type impurity over the gate electrodes; forming first conductive layers serving as masks with a droplet discharge method in a position overlapping the gate electrodes, etching the semiconductor layer and the semiconductor layer containing one-conductivity type impurity with the first conductive layers, forming a second conductive layer serving as a source wiring or a drain wiring with a droplet discharge method over the first conductive layers; and etching the first conductive layers and the semiconductor layer containing one-conductivity type impurity, using the second conductive layers as masks.

30. 发明申请

US20070051958A1 Display device and method for manufacturing the same, and television receiver 失效
标题翻译：显示装置及其制造方法以及电视接收机
公开(公告)号：US20070051958A1
公开(公告)日：2007-03-08
申请号：US10574880
申请日：2004-10-25
申请人： Shunpei Yamazaki , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Keitaro Imai
发明人： Shunpei Yamazaki , Shinji Maekawa , Makoto Furuno , Osamu Nakamura , Keitaro Imai
IPC分类号： H01L29/04
CPC分类号： H01L27/12 , H01L27/1292 , H01L27/3276 , H01L29/66757 , H01L29/66765 , H01L51/56
摘要： According to the present invention, which is a display device in which a light-emitting element where an organic substance generating luminescence referred to as electroluminescence or a medium including a mixture of an organic substance and an inorganic substance is sandwiched between electrodes is connected to a TFT, the invention is to manufacture a display panel by forming at least one or more of a conductive layer which forms a wiring or an electrode and a pattern necessary for manufacturing a display panel such as a mask layer for forming a predetermined pattern is formed by a method capable of selectively forming a pattern. A droplet discharge method capable of forming a predetermined pattern by selectively discharging a droplet of a composition in accordance with a particular object and by forming a conductive layer or an insulating layer is used as a method capable of selectively forming a pattern.
摘要翻译：根据本发明，其中将发出被称为电致发光的有机物质的发光元件或包含有机物和无机物的混合物的介质夹在电极之间的发光元件连接到 TFT，本发明通过形成至少一个或多个形成布线或电极的导电层以及用于制造用于形成预定图案的掩模层等显示面板所需的图案来制造显示面板，由能够选择性地形成图案的方法。使用能够通过选择性地排出根据特定目的的组合物的液滴并且通过形成导电层或绝缘层来形成预定图案的液滴喷射方法作为能够选择性地形成图案的方法。

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