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    • 21. 发明申请
    • Integration of damascene type diodes and conductive wires for memory device
    • 集成镶嵌型二极管和导线用于存储器件
    • US20100127358A1
    • 2010-05-27
    • US12292620
    • 2008-11-21
    • Yoichiro Tanaka
    • Yoichiro Tanaka
    • H01L21/329H01L29/868
    • H01L27/1021
    • A method of making a semiconductor device includes forming a first conductivity type polysilicon layer over a substrate, forming an insulating layer over the first conductivity type polysilicon layer, where the insulating layer comprises an opening exposing the first conductivity type polysilicon layer, and forming an intrinsic polysilicon layer in the opening over the first conductivity type polysilicon layer. A nonvolatile memory device contains a first electrode, a steering element located in electrical contact with the first electrode, a storage element having a U-shape cross sectional shape located over the steering element, and a second electrode located in electrical contact with the storage element.
    • 制造半导体器件的方法包括在衬底上形成第一导电型多晶硅层,在第一导电型多晶硅层上形成绝缘层,其中绝缘层包括暴露第一导电型多晶硅层的开口,并形成内在的 在第一导电型多晶硅层的开口中的多晶硅层。 非易失性存储器件包括第一电极,与第一电极电接触的操作元件,位于操舵元件上方的具有U形横截面形状的存储元件,以及与存储元件电接触的第二电极 。