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21. 发明申请

US20140332076A1 SYSTEMS AND METHODS USING METAL NANOSTRUCTURES IN SPECTRALLY SELECTIVE ABSORBERS 审中-公开
标题翻译：在选择性吸收剂中使用金属纳米结构的系统和方法
公开(公告)号：US20140332076A1
公开(公告)日：2014-11-13
申请号：US14340608
申请日：2014-07-25
申请人： Jifeng Liu , Xiaoxin Wang , Xiaobai Yu
发明人： Jifeng Liu , Xiaoxin Wang , Xiaobai Yu
IPC分类号： G02B5/22 , B05D1/00 , B05D3/02 , H01L31/052
CPC分类号： G02B5/22 , B05D1/005 , B05D3/0254 , B82Y20/00 , F03G6/06 , F24S10/45 , F24S20/20 , F24S23/30 , F24S23/71 , F24S23/80 , F24S30/425 , F24S40/10 , F24S70/20 , F24S80/50 , F24S80/56 , Y02E10/41 , Y02E10/42 , Y02E10/44 , Y02E10/46
摘要： Solution-processed Ni nanochain-SiOx (x
摘要翻译：溶液处理的Ni纳米级SiOx（x <2）和Ni纳米链-SiO2选择性太阳能热吸收剂在空气中表现出高达600℃的强抗氧化性能。热稳定性远优于Ni纳米粒子-Al2O3选择性太阳能热吸收器。 SiOx（x <2）和SiO2基体分别衍生自氢倍半硅氧烷（HSQ）和原硅酸四乙酯（TEOS）前体。我们发现，过量的Si和化学计量的SiO2基体都有助于抗氧化行为。描述制备选择性太阳能热吸收器的方法。用于光谱选择性辐射吸收的系统和系统的制造方法包括包括金属纳米结构的基体，每个金属纳米结构具有光谱选择性辐射吸收特性，使得矩阵反射入射到其上的多数波长大于截止波长，并吸收其中入射的大部分光，用于小于截止波长的波长。

22. 发明授权

US08242480B2 Engineering emission wavelengths in laser and light emitting devices 有权
标题翻译：激光和发光器件中的工程发射波长
公开(公告)号：US08242480B2
公开(公告)日：2012-08-14
申请号：US12821643
申请日：2010-06-23
申请人： Lionel C. Kimerling , Jifeng Liu , Jurgen Michel
发明人： Lionel C. Kimerling , Jifeng Liu , Jurgen Michel
IPC分类号： H01L29/12
CPC分类号： H01L33/30 , B82Y20/00 , H01L33/06 , H01S5/3403 , H01S5/34333
摘要： A light emitting device is provided that includes at least one first semiconductor material layers and at least one second semiconductor material layers. At least one near-direct band gap material layers are positioned between the at least one first semiconductor layers and the at least one second semiconductor material layers. The at least one first semiconductor layers and the at least one second material layers have a larger band gap than the at least one near-direct band gap material layers. The at least one near-direct band gap material layers have an energy difference between the direct and indirect band gaps of less than 0.5 eV.
摘要翻译：提供一种发光器件，其包括至少一个第一半导体材料层和至少一个第二半导体材料层。至少一个近直接带隙材料层位于至少一个第一半导体层和至少一个第二半导体材料层之间。所述至少一个第一半导体层和所述至少一个第二材料层具有比所述至少一个近直接带隙材料层更大的带隙。所述至少一个近直接带隙材料层具有小于0.5eV的直接和间接带隙之间的能量差。

23. 发明申请

US20120025195A1 Confined Lateral Growth of Crystalline Material 审中-公开
标题翻译：结晶材料的限制横向生长
公开(公告)号：US20120025195A1
公开(公告)日：2012-02-02
申请号：US13191682
申请日：2011-07-27
申请人： Kevin Andrew McComber , Jifeng Liu , Jurgen Michel , Lionel C. Kimerling
发明人： Kevin Andrew McComber , Jifeng Liu , Jurgen Michel , Lionel C. Kimerling
IPC分类号： H01L29/161 , C30B19/00 , H01L21/203 , C30B23/04 , H01L21/208 , B05C11/00 , C30B25/04
CPC分类号： C30B25/18 , C23C16/04 , C23C16/06 , C30B23/04 , C30B25/04 , C30B29/08 , H01L21/02521 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L27/1281 , H01L29/66742 , H01L29/78684
摘要： In a structure for crystalline material growth, there is provided a lower growth confinement layer and an upper growth confinement layer that is disposed above and vertically separated from the lower growth confinement layer. A lateral growth channel is provided between the upper and lower growth confinement layers, and is characterized by a height that is defined by the vertical separation between the upper and lower growth confinement layers. A growth seed is disposed at a site in the lateral growth channel for initiating crystalline material growth in the channel. A growth channel outlet is included for providing formed crystalline material from the growth channel. With this growth confinement structure, crystalline material can be grown from the growth seed to the lateral growth channel outlet.
摘要翻译：在结晶材料生长的结构中，提供了较低的生长限制层和上部生长约束层，其设置在下部生长限制层的上方并与之垂直分离。在上部和下部生长限制层之间提供横向生长通道，其特征在于由上部和下部生长限制层之间的垂直分隔限定的高度。将生长种子设置在横向生长通道中的位置以引发通道中的结晶材料生长。包括生长通道出口用于从生长通道提供形成的结晶材料。利用这种生长限制结构，可以将结晶物质从生长种子生长到侧生长通道出口。

24. 发明授权

US07840099B2 Ultrafast Ge/Si resonator-based modulators for optical data communications in silicon photonics 有权
标题翻译：用于硅光子学中光学数据通信的超高速Ge / Si谐振器调制器
公开(公告)号：US07840099B2
公开(公告)日：2010-11-23
申请号：US11624357
申请日：2007-01-18
申请人： Dong Pan , Jifeng Liu , Lionel C. Kimerling , James F. McMillan , Michael D. Sockin , Chee Wei Wong
发明人： Dong Pan , Jifeng Liu , Lionel C. Kimerling , James F. McMillan , Michael D. Sockin , Chee Wei Wong
IPC分类号： G02F1/01 , G02F1/295
CPC分类号： G02F1/3132 , G02B6/12007 , G02F1/3136
摘要： An optical modulator structure includes at least two waveguide structures for inputting and outputting an optical signal. At least one ring resonator structure provides coupling between the at least two waveguide structures. The at least one ring resonator structure includes Ge or SiGe.
摘要翻译：光调制器结构包括用于输入和输出光信号的至少两个波导结构。至少一个环形谐振器结构提供了至少两个波导结构之间的耦合。所述至少一个环形谐振器结构包括Ge或SiGe。

25. 发明申请

US20070270418A1 Inhibitors of P38 and Methods of Using the Same 失效
标题翻译： P38抑制剂及其使用方法
公开(公告)号：US20070270418A1
公开(公告)日：2007-11-22
申请号：US10556161
申请日：2004-05-14
申请人： Mark Ashwell , Syed Ali , Jifeng Liu , Yanbin liu , Peter Lohse , Belew Mekonnen , Robert Selliah , Manish Tandon , Woj Wrona , Valery Antonenko
发明人： Mark Ashwell , Syed Ali , Jifeng Liu , Yanbin liu , Peter Lohse , Belew Mekonnen , Robert Selliah , Manish Tandon , Woj Wrona , Valery Antonenko
IPC分类号： A61K31/506 , A61K31/5377 , A61P11/00 , A61P17/06 , A61P19/02 , A61P19/10 , A61P25/16 , A61P25/28 , A61P31/16 , A61P31/22 , A61P35/00 , A61P37/00 , C07D239/32 , C07D263/00 , C07D265/30 , G01N33/53
CPC分类号： C07D513/04 , Y02P20/582
摘要： In general, the present invention relates to compounds capable of inhibiting p38, methods for inhibiting p38 in vivo or in vitro, and methods for treating conditions associated with p38 activity or cytokine activity.
摘要翻译：通常，本发明涉及能够抑制p38的化合物，体内或体外抑制p38的方法，以及用于治疗与p38活性或细胞因子活性相关的病症的方法。

26. 发明申请

US20070104411A1 Vertically-integrated waveguide photodetector apparatus and related coupling methods 有权
公开(公告)号：US20070104411A1
公开(公告)日：2007-05-10
申请号：US11269355
申请日：2005-11-08
申请人： Donghwan Ahn , Jifeng Liu , Jurgen Michel , Lionel Kimerling
发明人： Donghwan Ahn , Jifeng Liu , Jurgen Michel , Lionel Kimerling
IPC分类号： G02B6/12
CPC分类号： G02B6/12004 , G02B6/1228 , G02B6/4201 , G02B2006/12061
摘要： High-speed optoelectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.

27. 发明申请

US20070104410A1 Integrated waveguide photodetector apparatus with matching propagation constants and related coupling methods 有权
标题翻译：具有匹配传播常数和相关耦合方法的集成波导光电探测器
公开(公告)号：US20070104410A1
公开(公告)日：2007-05-10
申请号：US11269354
申请日：2005-11-08
申请人： Donghwan Ahn , Jifeng Liu , Jurgen Michel , Lionel Kimerling
发明人： Donghwan Ahn , Jifeng Liu , Jurgen Michel , Lionel Kimerling
IPC分类号： G02B6/12
CPC分类号： G02B6/1228 , G02B6/12004 , G02B6/305 , H01L31/022408 , H01L31/028 , H01L31/0312 , H01L31/105 , H01L31/125 , Y02E10/547
摘要： High-speed optoetectronic devices having a waveguide densely integrated with and efficiently coupled to a photodetector are fabricated utilizing methods generally compatible with CMOS processing techniques. In various implementations, the waveguide consists essentially of single-crystal silicon and the photodetector contains, or consists essentially of, epitaxially grown germanium or a silicon-germanium alloy having a germanium concentration exceeding about 90%.
摘要翻译：具有通常与CMOS处理技术兼容的方法制造具有与光电检测器密集地集成并有效耦合的波导的高速光电检测器件。在各种实施方案中，波导基本上由单晶硅组成，并且光电检测器包含或基本上由外延生长的锗或锗浓度超过约90％的硅 - 锗合金构成。

28. 发明授权

US09692209B2 High-concentration active doping in semiconductors and semiconductor devices produced by such doping 有权
公开(公告)号：US09692209B2
公开(公告)日：2017-06-27
申请号：US14124004
申请日：2012-03-01
申请人： Jonathan T. Bessette , Yan Cai , Rodolfo E. Camacho-Aguilera , Jifeng Liu , Lionel Kimerling , Jurgen Michel
发明人： Jonathan T. Bessette , Yan Cai , Rodolfo E. Camacho-Aguilera , Jifeng Liu , Lionel Kimerling , Jurgen Michel
IPC分类号： H01S3/0941 , H01S5/30 , H01L21/02 , H01L21/225 , H01L21/265 , H01S5/227 , H01S5/32 , H01S5/042 , H01S5/22
CPC分类号： H01S5/3027 , H01L21/0237 , H01L21/0245 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02661 , H01L21/02664 , H01L21/2254 , H01L21/26513 , H01S5/0421 , H01S5/0422 , H01S5/2214 , H01S5/227 , H01S5/3054 , H01S5/3086 , H01S5/3223
摘要： In a method of forming a photonic device, a first silicon electrode is formed, and then a germanium active layer is formed on the first silicon electrode while including n-type dopant atoms in the germanium layer, during formation of the layer, to produce a background electrical dopant concentration that is greater than an intrinsic dopant concentration of germanium. A second silicon electrode is then formed on a surface of the germanium active layer. The formed germanium active layer is doped with additional dopant for supporting an electrically-pumped guided mode as a laser gain medium with an electrically-activated n-type electrical dopant concentration that is greater than the background dopant concentration to overcome electrical losses of the photonic device.

29. 发明授权

US09356171B2 Method of forming single-crystal semiconductor layers and photovaltaic cell thereon 有权
标题翻译：在其上形成单晶半导体层和光电池的方法
公开(公告)号：US09356171B2
公开(公告)日：2016-05-31
申请号：US13401206
申请日：2012-02-21
申请人： Jifeng Liu , Xiaoxin Wang
发明人： Jifeng Liu , Xiaoxin Wang
IPC分类号： H01L31/0368 , C30B1/02 , C30B29/06 , H01L31/076 , H01L31/18
CPC分类号： H01L31/0368 , C30B1/02 , C30B1/023 , C30B29/06 , H01L31/03682 , H01L31/076 , H01L31/1872 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： A method for forming single crystal or large-crystal-grain thin-film layers deposits a thin-film amorphous, nanocrystalline, microcrystalline, or polycrystalline layer, and laser-heats a seed spot having size on the order of a critical nucleation size of the thin-film layer. The single-crystal seed spot is extended into a single-crystal seed line by laser-heating one or more crystallization zones adjacent to the seed spot and drawing the zone across the thin-film layer. The single-crystal seed line is extended across the thin-film material layer into a single-crystal layer by laser-heating an adjacent linear crystallization zone and drawing the crystallization zone across the thin-film layer. Photovoltaic cells may be formed in or on the single-crystal layer. Tandem photovoltaic devices may be formed using one or several iterations of the method. The method may also be used to form single-crystal semiconductor thin-film transistors, such as for display devices, or to form single-crystal superconductor layers.
摘要翻译：用于形成单晶或大晶粒薄膜层的方法沉积薄膜非晶，纳米晶体，微晶或多晶层，并且激光加热具有临界成核尺寸级别的大小的晶种点薄膜层。通过激光加热与种子斑点相邻的一个或多个结晶区域并将该区域横穿薄膜层，将单晶种子斑点延伸到单晶种子线中。单晶种子线通过激光加热相邻的线性结晶区并在薄膜层上拉伸结晶区，在薄膜材料层上延伸成单晶层。光电池可以形成在单晶层中或单晶层上。可以使用该方法的一个或多个迭代来形成串联光伏器件。该方法也可用于形成诸如显示器件的单晶半导体薄膜晶体管，或者形成单晶超导体层。

30. 发明授权

US07902192B2 Inhibitors of P38 and methods of using the same 失效
标题翻译： P38抑制剂及其使用方法
公开(公告)号：US07902192B2
公开(公告)日：2011-03-08
申请号：US10556161
申请日：2004-05-14
申请人： Mark A. Ashwell , Syed Ali , Jifeng Liu , Yanbin Liu , Peter Lohse , Belew Mekonnen , Robert Selliah , Manish Tandon , Woj Wrona , Valery Antonenko
发明人： Mark A. Ashwell , Syed Ali , Jifeng Liu , Yanbin Liu , Peter Lohse , Belew Mekonnen , Robert Selliah , Manish Tandon , Woj Wrona , Valery Antonenko
IPC分类号： C07D498/04 , A61K31/41
CPC分类号： C07D513/04 , Y02P20/582
摘要： In general, the present invention relates to compounds capable of inhibiting p38, methods for inhibiting p38 in vivo or in vitro, and methods for treating conditions associated with p38 activity or cytokine activity.
摘要翻译：通常，本发明涉及能够抑制p38的化合物，体内或体外抑制p38的方法，以及用于治疗与p38活性或细胞因子活性相关的病症的方法。

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