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    • 22. 发明授权
    • Pattern forming method and method of manufacturing semiconductor device
    • 图案形成方法和制造半导体器件的方法
    • US07794922B2
    • 2010-09-14
    • US11431823
    • 2006-05-11
    • Shinichi ItoKentaro MatsunagaDaisuke KawamuraYasunobu Onishi
    • Shinichi ItoKentaro MatsunagaDaisuke KawamuraYasunobu Onishi
    • G03F7/26
    • G03F7/2041G03F7/11Y10S430/162
    • A pattern forming method includes forming a photo resist film on a film to be processed, forming a protective film for protecting the photo resist film from an immersion liquid on the photo resist film by coating method, performing immersion exposure selectively to a region of part of the photo resist film via the immersion liquid, the immersion liquid being supplied onto the photo resist film, removing a residual substance including an affinitive part for the immersion liquid from the protective film after the forming the protective film and before the performing immersion exposure selectively to the region of part of the photo resist film, removing the protective film, and forming a pattern comprising the photo resist film by selectively removing an exposed region or a non-exposed region of the photo resist film.
    • 图案形成方法包括在被处理膜上形成光致抗蚀剂膜,通过涂布法在光致抗蚀剂膜上形成用于保护光致抗蚀剂膜的浸渍液的保护膜,选择性地进行部分浸渍曝光 通过浸渍液将该光致抗蚀剂膜,浸渍液体供给到光致抗蚀剂膜上,在形成保护膜之后,在进行浸渍曝光前,选择性地除去包含浸渍液的残留物质的残留物质, 通过选择性地去除光致抗蚀剂膜的曝光区域或未曝光区域,去除保护膜,以及形成包括光致抗蚀剂膜的图案。
    • 26. 发明授权
    • Device manufacturing method
    • 器件制造方法
    • US07459264B2
    • 2008-12-02
    • US11175275
    • 2005-07-07
    • Daisuke KawamuraAkiko MimotogiTakashi Sato
    • Daisuke KawamuraAkiko MimotogiTakashi Sato
    • G03F7/26
    • G03F7/70341
    • A device manufacturing method is disclosed, which includes forming a resist film on a substrate, preparing an exposure tool which comprises a projection optical system, preparing a photo mask on which a mask pattern is formed, mounting the substrate and the photo mask on the exposure tool, the substrate having the resist film formed thereon, transferring the mask pattern formed on the photo mask onto the resist film in a state in which a solution including an oxidative agent is filled between the resist film and a final element of a projection optical system to form a latent image of the mask pattern on the resist film, heating the resist film having the latent image formed thereon, and developing the heated resist film.
    • 公开了一种器件制造方法,其包括在衬底上形成抗蚀剂膜,制备曝光工具,其包括投影光学系统,制备其上形成掩模图案的光掩模,将衬底和光掩模安装在曝光 工具,其上形成有抗蚀剂膜的基板,在将包含氧化剂的溶液填充在抗蚀剂膜和投影光学系统的最终元件之间的状态下,将形成在光掩模上的掩模图案转印到抗蚀剂膜上 在抗蚀剂膜上形成掩模图案的潜像,加热其上形成有潜像的抗蚀剂膜,并显影加热的抗蚀剂膜。
    • 28. 发明申请
    • Manufacturing method of semiconductor device
    • 半导体器件的制造方法
    • US20070188733A1
    • 2007-08-16
    • US11654566
    • 2007-01-18
    • Shinichi ItoKentaro MatsunagaDaisuke Kawamura
    • Shinichi ItoKentaro MatsunagaDaisuke Kawamura
    • G03B27/32
    • G03D3/08G03B27/42G03F7/70341
    • A manufacturing method of a semiconductor device including a liquid immersion movement exposure of interposing a liquid between an exposure target substrate and a projection optical system of an exposure apparatus, and carrying out an exposure processing with respect to a plurality of exposure regions set on a surface of the substrate while relatively moving the substrate with respect to the system, a first liquid immersion movement of relatively moving the substrate with respect to the system while interposing the liquid between the substrate and the system, in adjacent exposure regions of said each exposure region, and a second liquid immersion movement of relatively moving the substrate with respect to the system at a speed lower than a movement speed in the first movement, while interposing the liquid between the substrate and the system, in a distance that is longer than a movement distance in the first movement.
    • 一种半导体器件的制造方法,包括在曝光对象基板和曝光装置的投影光学系统之间插入液体的液浸式移动曝光,并对相对于设置在表面上的多个曝光区域进行曝光处理 在相对于所述系统相对移动所述衬底的同时,在所述每个曝光区域的相邻曝光区域中相对于所述衬底相对地移动所述衬底同时在所述衬底和所述系统之间插入液体的第一液浸动作, 以及第二液浸移动,其以比第一移动中的移动速度低的速度相对于所述系统移动所述基板,同时在所述基板和所述系统之间以比移动距离长的距离 在第一动作。