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    • 30. 发明专利
    • Semiconductor device and manufacturing method of the same
    • 半导体器件及其制造方法
    • JP2013138105A
    • 2013-07-11
    • JP2011288199
    • 2011-12-28
    • Nitto Denko Corp日東電工株式会社
    • NAKAYAMA JUNICHITERADA YOSHIOHATA KENTAFURUTA KENJITOJO MIDORIFURUTA YOSHIHISA
    • H01L33/48H01L33/64
    • PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can manufacture a semiconductor device with excellent manufacturing efficiency and which can prevent deterioration in performance of the obtained semiconductor device; and provide a semiconductor device obtained by the manufacturing method.SOLUTION: A semiconductor device manufacturing method comprises: preparing a substrate 3 on which a light-emitting diode element 2 is mounted on a top face; installing a spacer member 4 thicker than a thickness T1 of the light-emitting diode element 2 on the top face of the substrate 3 exposed from the light-emitting diode element 2; and pressure bonding the substrate 3 on which the space member 4 is installed to a support medium 10 by a roller 9 via a pressure-sensitive adhesive sheet 7 to manufacture a light-emitting diode device 1.
    • 要解决的问题:提供一种半导体器件制造方法,其可以制造具有优异的制造效率并能够防止所获得的半导体器件的性能劣化的半导体器件; 并提供通过制造方法获得的半导体器件。解决方案:一种半导体器件制造方法,包括:准备在顶面上安装有发光二极管元件2的衬底3; 在从发光二极管元件2暴露的基板3的顶面上安装比发光二极管元件2的厚度T1厚的间隔件4; 并且通过压敏粘合片7通过辊9将其上安装有空间部件4的基板3压接到支撑介质10上,以制造发光二极管装置1。