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21. 发明专利

JP2012131731A Method of producing fluorinated alkene 审中-公开
标题翻译：生产氟化碱的方法
公开(公告)号：JP2012131731A
公开(公告)日：2012-07-12
申请号：JP2010284558
申请日：2010-12-21
申请人： Nippon Zeon Co Ltd , 日本ゼオン株式会社
发明人： SUGIMOTO TATSUYA
IPC分类号： C07C17/23 , C07C21/18
摘要： PROBLEM TO BE SOLVED: To provide a method of producing a fluorinated alkene useful as: a plasma reaction gas for etching, CVD and the like useful in a production field of a semiconductor device; a monomer as a raw material for a fluorine-containing polymer; or raw materials of a fluorine-containing pharmaceutical intermediate and a hydrofluoro carbon solvent.SOLUTION: A halogen atom is reduced to be converted into the fluorinated alkene, by bringing a halogen-containing fluorinated olefin into contact with zinc and/or magnesium at 0°C or less of temperature in the presence of an acid. The fluorinated alkene of an objective product is easily refined and a yield is enhanced, by adding a dienophile compound to a reaction liquid from which a metal residue is removed, after the reaction, to subject a fluorine-containing butadiene compound to cyclization reaction.
摘要翻译：解决问题的方法：提供可用作以下的氟化烯烃的制造方法：用于半导体装置的制造领域的用于蚀刻的等离子体反应气体，CVD等; 作为含氟聚合物的原料的单体; 或含氟药物中间体和氢氟碳溶剂的原料。解决方案：在酸的存在下，通过使含卤素的氟化烯烃在0℃或更低的温度下与锌和/或镁接触，将卤素原子还原成转化为氟化烯烃。通过在去除金属残留物的反应液中添加亲二烯体化合物，反应后，使含氟丁二烯化合物进行环化反应，容易地精制目的产物的氟化烯并提高产率。版权所有（C）2012，JPO＆INPIT

22. 发明专利

JP2009269891A Fluorine-containing alkene compound and method for producing the same 有权
标题翻译：含氟的烯烃化合物及其生产方法
公开(公告)号：JP2009269891A
公开(公告)日：2009-11-19
申请号：JP2008124375
申请日：2008-05-12
申请人： Nippon Zeon Co Ltd , 日本ゼオン株式会社
发明人： NAKASUGI SHIGEMASA , ISHIMURA TAKAYUKI , SUGIMOTO TATSUYA
IPC分类号： C07C21/18 , C07B61/00 , C07C17/20 , C07C17/23 , C07C17/25 , C07C21/22
摘要： PROBLEM TO BE SOLVED: To provide a new fluorine-containing alkene compound which is a useful precursor for producing a perfluoroalkyne compound efficiently, and the new compound.
SOLUTION: This fluorine-containing alkene compound is obtained by reacting a chlorine-containing alkene compound with sodium borohydride, and also the fluorine-containing alkene compound can be obtained by reacting hydrogen fluoride with a halogen-containing alkene compound or a halogen-containing alkane compound in the presence of a fluorination catalyst. From thus obtained fluorine-containing alkene compound, the perfluoroalkyne compound can be obtained in a high yield and in good productivity by removing hydrochloric acid by using a method of reacting with an aqueous alkaline solution, etc.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种新的含氟烯烃化合物，其是有效地生产全氟炔烃化合物的有用前体和新的化合物。解决方案：该含氟烯烃化合物是通过使含氯烯烃化合物与硼氢化钠反应得到的，并且含氟烯烃化合物可以通过使氟化氢与含卤素的烯烃化合物或卤素在氟化催化剂存在下进行烷基化。通过这样得到的含氟烯烃化合物，可以通过使用与碱性水溶液等反应的方法除去盐酸，以高产率和高生产率获得全氟炔化合物。（C）2010 ，JPO＆INPIT

23. 发明专利

JP2009067743A Method for producing monohydroperfluorocycloalkanes 有权
标题翻译：生产单羟基烷烃的方法
公开(公告)号：JP2009067743A
公开(公告)日：2009-04-02
申请号：JP2007239182
申请日：2007-09-14
申请人： Nippon Zeon Co Ltd , 日本ゼオン株式会社
发明人： SUGIMOTO TATSUYA
IPC分类号： C07C17/23 , C07C17/383
摘要： PROBLEM TO BE SOLVED: To provide a method for producing monohydroperfluorocycloalkanes commercially advantageously by simple and easy operations.
SOLUTION: The method for producing a monohydroxylated compound comprises reacting a compound expressed by formula (1) with a hydroalkylsilane, and further comprises adding a fluorine-containing solvent having by ≥10°C higher boiling point than that of a reaction product.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供通过简单且容易的操作有利于商业上制备单氢全氟烷烃的方法。解决方案：用于制备单羟基化合物的方法包括使由式（1）表示的化合物与氢烷基硅烷反应，并且还包括加入比反应产物高10℃以上的含氟溶剂。版权所有（C）2009，JPO＆INPIT

24. 发明专利

JP2008300616A Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：JP2008300616A
公开(公告)日：2008-12-11
申请号：JP2007144870
申请日：2007-05-31
申请人： Nippon Zeon Co Ltd , 日本ゼオン株式会社
发明人： SUGIMOTO TATSUYA , NAKASUGI SHIGEMASA , NAKAMURA MASAHIRO
IPC分类号： H01L21/3065 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide an etching method etching a laminated film containing a silicon oxide-film layer in at least one layer and a silicon nitride-film layer in at least one layer by a single treating gas. SOLUTION: In the etching method, a body to be treated with the laminated film containing the silicon oxide-film layer in at least one layer and the silicon nitride-film layer in at least one layer is fitted into a treating chamber, the treating gas is introduced and both the silicon oxide-layer film and the silicon nitride-film layer in the laminated film are etched. In the etching method, the treating gas contains C a H b F c (a=3 to 5, b=1 to 2 and c=3 to 10). COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种蚀刻方法，通过单个处理气体在至少一层中蚀刻含有氧化硅膜层的层叠膜和至少一层的氮化硅膜层。解决方案：在蚀刻方法中，将至少一层中含有氧化硅膜层的叠层膜和至少一层中的氮化硅膜层处理的物体装配到处理室中，导入处理气体，并对层叠膜中的氧化硅层和氮化硅膜层进行蚀刻。在蚀刻方法中，处理气体含有C（a = 3〜5，b = 1〜2，c = 3〜10）。版权所有（C）2009，JPO＆INPIT

25. 发明专利

JP2005079239A Liquid and method for cleaning semiconductor substrate 审中-公开
标题翻译：用于清洁半导体基板的液体和方法
公开(公告)号：JP2005079239A
公开(公告)日：2005-03-24
申请号：JP2003306019
申请日：2003-08-29
申请人： Nippon Zeon Co Ltd , 日本ゼオン株式会社
发明人： NAKAMURA MASAHIRO , SUGIMOTO TATSUYA
IPC分类号： C11D7/26 , C11D7/30 , C11D7/50 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor substrate cleaning liquid which is for cleaning a semiconductor substrate that has been applied with a chemical-mechanical polishing treatment and which has an excellent cleaning performance.
SOLUTION: The semiconductor substrate cleaning liquid is a cleaning liquid for cleaning a semiconductor substrate which has been applied with a chemical-mechanical polishing treatment. The semiconductor substrate cleaning liquid is mainly made of fluorinated hydrocarbon including 4-6 carbons expressed by a formula (I): Rf1-CHF-CF2-Rf2, where Rf1 and Rf2 are independent perfluoroalkyl groups, but could be bonded together to form a ring. A semiconductor substrate cleaning method includes a process wherein the semiconductor substrate cleaning liquid kept at 35°C or above is brought into contact with the surface of a semiconductor substrate polished with a chemical-mechanical polishing agent to remove metal impurities and particle contamination.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种半导体衬底清洗液，用于清洁已经进行了化学机械抛光处理的半导体衬底并具有优异的清洁性能。解决方案：半导体衬底清洗液是用于清洁已经进行化学机械抛光处理的半导体衬底的清洗液。半导体基板清洗液主要由包含4-6个碳原子的氟化烃构成，式（I）表示：Rf1-CHF-CF2-Rf2，其中Rf1和Rf2是独立的全氟烷基，但可以结合在一起形成环。半导体衬底清洁方法包括使保持在35℃以上的半导体衬底清洁液体与用化学机械抛光剂抛光的半导体衬底的表面接触以除去金属杂质和颗粒污染的过程。版权所有（C）2005，JPO＆NCIPI

26. 发明专利

JP2004231562A Method for producing perfluoroalkyne compound 审中-公开
公开(公告)号：JP2004231562A
公开(公告)日：2004-08-19
申请号：JP2003021493
申请日：2003-01-30
申请人： Nippon Zeon Co Ltd , 日本ゼオン株式会社
发明人： SUGIMOTO TATSUYA , YAMADA TOSHIRO
IPC分类号： C07C17/25 , C07C21/22
摘要： PROBLEM TO BE SOLVED: To provide an industrially advantageous method for efficiently producing a perfluoroalkyne compound useful as a raw material for producing gas for plasma reaction, a fluorine-containing polymer, a medicine and an agrochemical or as an etching agent useful in a semiconductor production process.
SOLUTION: The method for producing the perfluoroalkyne compound comprises a first process for reacting a compound represented by the formula: R
a C≡CH (R
a is a 1-2C perfluoroalkyl group) with a compound represented by the general formula: R
b X (R
b is a 1-3C perfluoroalkyl group; X is a chlorine atom, a bromine atom or an iodine atom) to give a compound represented by the formula: R
a CX=CHR
b and a second process for reacting the compound represented by the above R
a CX=CHR
b with a basic compound to give a compound represented by the formula: R
a C≡CR
b .
COPYRIGHT: (C)2004,JPO&NCIPI

27. 发明专利

JP2003286576A Gas for plasma reaction, method for forming fluorine- containing organic film, and fluorine-containing organic film 有权
标题翻译：用于等离子体反应的气体，形成含氟的有机膜的方法和含氟的有机膜
公开(公告)号：JP2003286576A
公开(公告)日：2003-10-10
申请号：JP2002091349
申请日：2002-03-28
申请人： Nippon Zeon Co Ltd , 日本ゼオン株式会社
发明人： SUGIMOTO TATSUYA , TANAKA KIMIAKI
IPC分类号： C23C16/50 , H01L21/312
摘要： PROBLEM TO BE SOLVED: To provide a gas for plasma reaction, which makes handling for a source gas easy, and forms a fluorine-containing organic film having a low relative permittivity at a high deposition rate, and to provide a method for forming the fluorine-containing organic film with the use of the gas, and the fluorine-containing organic film obtained by the forming method.
SOLUTION: The method for forming the fluorine-containing organic film on a substrate with a chemical vapor deposition method, is characterized by using the gas for the plasma reaction, which includes at least one sort of a 3-8C unsaturated cyclic hydrofluorocarbon. The fluorine-containing organic film is characterized by being formed by the forming method.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供一种用于等离子体反应的气体，这使得易于处理源气体，并且以高沉积速率形成具有低相对介电常数的含氟有机膜，并且提供一种方法通过使用气体形成含氟有机膜，以及通过形成方法获得的含氟有机膜。解决方案：通过化学气相沉积法在基板上形成含氟有机膜的方法的特征在于使用用于等离子体反应的气体，其包括至少一种3-8C不饱和环状氢氟烃。含氟有机膜的特征在于通过成型方法形成。版权所有（C）2004，JPO

28. 发明专利

JP2014185111A High-purity 2,2-difluorobutane 审中-公开
标题翻译：高纯度2,2-DIFLUOROBUTANE
公开(公告)号：JP2014185111A
公开(公告)日：2014-10-02
申请号：JP2013061453
申请日：2013-03-25
申请人： Nippon Zeon Co Ltd , 日本ゼオン株式会社
发明人： SUGIMOTO TATSUYA
IPC分类号： C07C19/08 , C09K13/08
摘要： PROBLEM TO BE SOLVED: To provide a high-purity 2,2-difluorobutane suitable as a gas for plasma reactions targeting semiconductors.SOLUTION: A high-purity 2,2-difluorobutane suitable as a gas for plasma reactions can be acquired past a rectifying step of purifying a crude 2,2-difluorobutane included within a crude reaction product until the purity thereof and combined contents of fluorobutenes and 2-butyne therein become 99.9 vol.% or above and 800 vol.ppm or below, respectively, a step of removing water from the purified product based on the contact thereof with an adsorbent, and a step of abating, by simple-distilling the 2,2-difluorobutane, nitrogen and oxygen concentrations within the 2,2-difluorobutane to 100 vol.ppm or below and 50 vol.ppm or below, respectively.
摘要翻译：要解决的问题：提供适合作为靶向半导体的等离子体反应气体的高纯度2,2-二氟丁烷。解决方案：适合作为等离子体反应气体的高纯度2,2-二氟丁烷可以通过整流纯化包含在粗反应产物中的粗制2,2-二氟丁烷的步骤，直到其纯度和其中的氟代丁烯和2-丁炔的组合含量分别为99.9vol。％或更高，并且分别为800vol.ppm或更低，步骤基于其与吸附剂的接触从净化产物中除去水，以及通过简单蒸馏2,2-二氟丁烷将2,2-二氟丁烷中的氮和氧浓度降至100体积ppm以下来减轻的步骤和50体积ppm以下。

29. 发明专利

JP2011173830A Method for producing alkyne, and method for purifying 2-butyne 有权
标题翻译：生产碱金属的方法，以及纯化2-丁基的方法
公开(公告)号：JP2011173830A
公开(公告)日：2011-09-08
申请号：JP2010038889
申请日：2010-02-24
申请人： Nippon Zeon Co Ltd , 日本ゼオン株式会社
发明人： SUGIMOTO TATSUYA
IPC分类号： C07C1/32 , C07B61/00 , C07C11/22
摘要： PROBLEM TO BE SOLVED: To provide a simple method for producing an alkyne from a vinylperfluoroalkane sulfonate. SOLUTION: The vinylperfluoroalkane sulfonate can be converted to the corresponding alkyne by treating it with a metal or a quaternary ammonium fluoride in an aprotic polar solvent. Also, by utilizing the technology, it is possible to purify an alkyne such as 2-butyne which is obtained from a petroleum fraction and conventionary difficult to be highly purified, in good purity. COPYRIGHT: (C)2011,JPO&INPIT

30. 发明专利

JP2010043034A Manufacturing method of hydrogen-containing fluoroolefin compound 有权
标题翻译：含氢氟烷化合物的制造方法
公开(公告)号：JP2010043034A
公开(公告)日：2010-02-25
申请号：JP2008208986
申请日：2008-08-14
申请人： Nippon Zeon Co Ltd , 日本ゼオン株式会社
发明人： SUGIMOTO TATSUYA
IPC分类号： C07C17/20 , C07B61/00 , C07C23/06 , C07C23/08
摘要： PROBLEM TO BE SOLVED: To provide a method for efficiently replacing a chlorine atom of a polyfluorocyclopentene with a fluorine atom.
SOLUTION: A fluorine-containing halogen compound represented by formula (1) is brought into contact with a metal fluoride and an alkylsulfonic acid salt to give a hydrogen-containing fluoroolefin compound with the X in formula (1) replaced with fluorine. In formula (1), n is an integer of 0-3, and X is a chlorine atom, a bromine atom or an iodine atom.
COPYRIGHT: (C)2010,JPO&INPIT

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