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21. 发明专利

JP2008109118A Magnetoresistance effect element and magnetic random access memory using it 审中-公开
标题翻译： MAGNETORESISTANCE效应元件和磁性随机存取存储器使用它
公开(公告)号：JP2008109118A
公开(公告)日：2008-05-08
申请号：JP2007249596
申请日：2007-09-26
申请人： Toshiba Corp , 株式会社東芝
发明人： YOSHIKAWA MASAHISA , KAI TADASHI , NAGASE TOSHIHIKO , KITAGAWA EIJI , KISHI TATSUYA , YODA HIROAKI
IPC分类号： H01L43/08 , H01F10/16 , H01F10/26 , H01F10/32 , H01L21/8246 , H01L27/105
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistance effect element of a spin injection writing system which is capable of carrying out magnetization inversion at low current. SOLUTION: Magnetoresistance effect element includes a magnetization fixed layer 3 in which a magnetization direction is fixed. A magnetization variable layer 2 has a variable magnetization direction and consists of magnetic alloy having a BCC structure expressed by general formula: Fe 1-x-y Co x Ni y (0≤x+y≤1, 0≤x, y≤1), and includes at least one additive element selected from the group consisting of V, Cr, Mn, wherein the content of the additive element is set within 0 COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够以低电流进行磁化反转的自旋注入写入系统的磁阻效应元件。解决方案：磁阻效应元件包括固定有磁化方向的磁化固定层3。磁化变化层2具有可变的磁化方向，由具有由以下通式表示的BCC结构的磁性合金构成：Fe 1-xy / SB>（0≤x+y≤1,0≤x，y≤1），并且包括选自V，Cr，Mn中的至少一种添加元素，其中添加元素的含量设置在 0

22. 发明专利

JP2007250584A Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：JP2007250584A
公开(公告)日：2007-09-27
申请号：JP2006067963
申请日：2006-03-13
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUZUMI YOSHIAKI , KAI TADASHI
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/105 , H01L43/08
CPC分类号： G11C11/16
摘要： PROBLEM TO BE SOLVED: To enhance resistance against incorrect writing and manufacturing yield of an MRAM.
SOLUTION: The magnetic random access memory comprises first and second writing lines Wupi and Wdownj, and a magnetoresistive effect element MTJ having a central point O1 not overlapping the intersection of the first and second writing lines Wupi and Wdownj when viewed from above the first and second writing lines Wupi and Wdownj. The center line Ce of the magnetoresistive effect element MTJ in the easy direction of magnetization and the center lines C1 and C2 of the first and second writing lines Wupi and Wdownj define a triangle.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提高对错误写入的抵抗力和制造MRAM的收益率。解决方案：磁性随机存取存储器包括第一和第二写入线Wupi和Wdownj，以及磁阻效应元件MTJ，当从上方观察时，中心点O1不与第一和第二写入线Wupi和Wdownj的交点重叠第一和第二写作文字Wupi和Wdownj。在磁化方向上的磁阻效应元件MTJ的中心线Ce和第一和第二写入线Wupi和Wdownj的中心线C1和C2限定三角形。版权所有（C）2007，JPO＆INPIT

23. 发明专利

JP2007095734A Magnetic recording apparatus 审中-公开
标题翻译：磁记录装置
公开(公告)号：JP2007095734A
公开(公告)日：2007-04-12
申请号：JP2005279381
申请日：2005-09-27
申请人： Toshiba Corp , 株式会社東芝
发明人： KAI TADASHI , NAKAYAMA MASAHIKO , IKEGAWA SUMIO
IPC分类号： H01L21/8246 , G11C11/15 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic recording apparatus where a small switching magnetic field and high stability at the time of half-selection are realized.
SOLUTION: The magnetic recording apparatus comprises a magnetoresistive element 1 comprising a reference layer, a magnetization variable layer, and a non-magnetic layer. First and second writing lines L1 and L2 sandwich the magnetoresistive element. A magnetic field following a magnetization difficult axis and a magnetization easy axis of the magnetization variable layer is applied to the magnetization variable layer. First and second current supply circuits SD1 and SD2 supply current to the first writing line and the second writing line, so that a first magnetic field which follows the magnetization easy axis and which turns to a direction opposite to a recording direction to which magnetization of the magnetization variable layer is to be turned is applied to the magnetization variable layer, a second magnetic field turning a direction following the magnetization difficult axis is applied to the magnetization variable layer while the first magnetic field is applied to the magnetization variable layer, and a third magnetic field turning a recording direction is applied to the magnetization variable layer while the second magnetic field is applied to the magnetization variable layer.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种在半选择时实现小的开关磁场和高稳定性的磁记录装置。解决方案：磁记录装置包括包括参考层，磁化变化层和非磁性层的磁阻元件1。第一和第二写入线L1和L2夹着磁阻元件。将磁化难易的轴和磁化变化层的易磁化轴之后的磁场施加到磁化变化层。第一和第二电流供给电路SD1和SD2向第一写入线和第二写入线提供电流，使得沿着易磁化轴的第一磁场并且转向与记录方向相反的方向磁化变化层被施加到磁化变化层，将第一磁场施加到磁化变化层，将磁化难易轴上的方向转动的第二磁场施加到磁化变化层，并且第三磁场向磁化变化层施加转动记录方向的磁场，同时将第二磁场施加到磁化变化层。版权所有（C）2007，JPO＆INPIT

24. 发明专利

JP2007067064A Magnetic random access memory 有权
标题翻译：磁性随机存取存储器
公开(公告)号：JP2007067064A
公开(公告)日：2007-03-15
申请号：JP2005249360
申请日：2005-08-30
申请人： Toshiba Corp , 株式会社東芝
发明人： IKEGAWA SUMIO , NAKAYAMA MASAHIKO , KAI TADASHI , INABA TSUNEO , FUKUZUMI YOSHIAKI , KISHI TATSUYA
IPC分类号： H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To reduce a switching magnetic field and to prevent erroneous writing. SOLUTION: The magnetic random access memory comprises first and second writing lines WLi and BLj that cross each other, a magnetoresistive effect element MTJ arranged at the intersection between the first and second writing lines WLi and BLj, and driver/sinker 1, 2, 3, and 4 for executing data writing by using the first quadrant and the third quadrant of the magnetoresistive effect element MTJ. The magnetoresistive effect element MTJ has unsymmetric astroid characteristics, with the first and third quadrants being recessed farther than the second and fourth quadrants. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：减少开关磁场并防止写入错误。磁性随机存取存储器包括彼此交叉的第一和第二写入线WLi和BLj，布置在第一和第二写入线WL1和BLj之间的交叉点处的磁阻效应元件MTJ以及驱动器/沉降片1， 2，3和4用于通过使用磁阻效应元件MTJ的第一象限和第三象限执行数据写入。磁阻效应元件MTJ具有不对称的星座特征，第一和第三象限比第二和第四象限凹入更远。版权所有（C）2007，JPO＆INPIT

25. 发明专利

JP2006040960A Magnetic random access memory ram 有权
标题翻译：磁性随机存取存储器RAM
公开(公告)号：JP2006040960A
公开(公告)日：2006-02-09
申请号：JP2004214755
申请日：2004-07-22
申请人： Toshiba Corp , 株式会社東芝
发明人： FUKUZUMI YOSHIAKI , KAI TADASHI
IPC分类号： H01L27/105 , G11C11/15 , H01L21/8246 , H01L43/08
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , H01F10/3272 , H01L27/222 , H01L27/228
摘要： PROBLEM TO BE SOLVED: To reduce writing current while erroneous writing is suppressed.
SOLUTION: A magnetic random access memory is provided with a magnetic resistance element 1 having a recording layer 30, a fixed layer 10 and an intermediate non-magnetic layer 20 disposed between the recording layer and the fixed layer. The recording layer is provided with a first ferromagnetic layer 31 formed on the intermediate non-magnetic layer, a first non-magnetic layer 32 formed on the first ferromagnetic layer, a second ferromagnetic layer 33 which is formed on the first non-magnetic layer and is magnetically connected to the first ferromagnetic layer through the first non-magnetic layer by first magnetic coupling, a second non-magnetic layer 34 formed on the second ferromagnetic layer and a third ferromagnetic layer 35 which is formed on the second non-magnetic layer and is magnetically connected to the second ferromagnetic layer through the second non-magnetic layer by second magnetic coupling. First magnetic coupling is antiferromagnetic coupling and second magnetic coupling is ferromagnetic coupling or first magnetic coupling is ferromagnetic coupling and second magnetic coupling is antiferromagnetic coupling.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：减少写入电流，同时抑制写入错误。解决方案：磁性随机存取存储器设置有磁阻元件1，磁阻元件1具有设置在记录层和固定层之间的记录层30，固定层10和中间非磁性层20。记录层设置有形成在中间非磁性层上的第一铁磁层31，形成在第一铁磁层上的第一非磁性层32，形成在第一非磁性层上的第二铁磁层33和通过第一磁耦合，通过第一非磁性层磁性连接到第一铁磁层，形成在第二铁磁层上的第二非磁性层34和形成在第二非磁性层上的第三铁磁层35和通过第二磁耦合通过第二非磁性层磁耦合到第二铁磁层。第一磁耦合是反铁磁耦合，第二磁耦合是铁磁耦合或第一磁耦合是铁磁耦合，第二磁耦合是反铁磁耦合。版权所有（C）2006，JPO＆NCIPI

26. 发明专利

JP2004165442A Magnetic device and magnetic memory 有权
公开(公告)号：JP2004165442A
公开(公告)日：2004-06-10
申请号：JP2002329714
申请日：2002-11-13
申请人： Toshiba Corp , 株式会社東芝
发明人： KAI TADASHI , KISHI TATSUYA , SAITO YOSHIAKI
IPC分类号： G01R33/09 , G11C11/15 , H01F10/14 , H01F10/32 , H01L21/8246 , H01L27/105 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetic device and a magnetic memory in which a burden on a wiring being used for inverting magnetization of the free layer in a magnetoresistive layer is lessened and power consumption required for inverting magnetization of the free layer can be reduced.
SOLUTION: The magnetic device comprises a magnetoresistive element 2, and a wiring 3 for inclining the orientation of magnetization of the free layer 11 thereof from a direction parallel with the major surface toward a direction perpendicular to the major surface when the orientation of magnetization of the free layer 11 is varied in a plane parallel with the major surface by supplying a current and generating a magnetic field component perpendicular to the major surface of the free layer 11 at the position of the free layer 11.
COPYRIGHT: (C)2004,JPO

27. 发明专利

JP2004158766A Magnetoresistive effect element and magnetic memory device 有权
公开(公告)号：JP2004158766A
公开(公告)日：2004-06-03
申请号：JP2002325124
申请日：2002-11-08
申请人： Toshiba Corp , 株式会社東芝
发明人： AMANO MINORU , KISHI TATSUYA , KAI TADASHI , NISHIYAMA KATSUYA , NAGASE TOSHIHIKO , SAITO YOSHIAKI
IPC分类号： H01L27/105 , H01L21/8246 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To provide a magnetoresistive effect element, having a double junction TMR element structure with as much decrease in shift of the R-H curve as possible and which is capable of solving the problem of the increase in power consumption, caused by an unbalance in a write current and wrong writing in an unselected cell.
SOLUTION: The magnetoresistive effect element has: a first magnetization fixing layer; a first tunnel barrier layer; a magnetization free layer including a first ferromagnetic layer, nonmagnetic layer, and a second ferromagnetic layer; a second tunnel barrier layer; and a second magnetization fixed layer. The magnetizing direction of the first and the second magnetization fixed layer are mutually in the opposite direction, and the first and the second ferromagnetic layer are antiferromagnetically coupled via the nonmagnetic layer. The magnetization of one of the first and the second ferromagnetic layer is larger than that of the other, and the magnetization of one of the first and the second magnetization fixed layers is larger than that of the other. The larger magnetized magnetization fixed layer is formed on a side closer to the smaller of the magnetization ferromagnetization layer of the first or the second ferromagnetization layer.
COPYRIGHT: (C)2004,JPO

28. 发明专利

JP2013048210A Magnetic resistance element 审中-公开
标题翻译：电磁元件
公开(公告)号：JP2013048210A
公开(公告)日：2013-03-07
申请号：JP2012105812
申请日：2012-05-07
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , KAI TADASHI , YODA HIROAKI
IPC分类号： H01L43/10 , H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08
CPC分类号： H01L43/08 , G01R33/091 , G01R33/093 , G01R33/098 , G11C11/161 , H01F10/30 , H01F10/3286 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To reduce a writing current.SOLUTION: A magnetic resistance element according to an embodiment has magnetic anisotropy in a direction vertical to a film surface. The magnetic resistance element comprises: a recording layer 13 having variable magnetization direction; a reference layer 15 having magnetic anisotropy in the direction vertical to the film surface and having variable magnetization direction; an intermediate layer 14 provided between the recording layer and the reference layer; and a foundation layer 12 provided on a surface opposite to a surface on which an intermediate layer of the recording layer is provided and containing AlTiN.
摘要翻译：要解决的问题：减少写入电流。解决方案：根据实施例的磁阻元件在垂直于膜表面的方向上具有磁各向异性。磁阻元件包括：具有可变磁化方向的记录层13; 在垂直于膜表面的方向上具有磁各向异性且具有可变的磁化方向的参考层15; 设置在记录层和参考层之间的中间层14; 以及设置在与设置有记录层的中间层并且包含AlTiN的表面相对的表面上的基底层12。版权所有（C）2013，JPO＆INPIT

29. 发明专利

JP2013016643A Magnetoresistive element and magnetic memory 有权
标题翻译：磁性元件和磁记忆
公开(公告)号：JP2013016643A
公开(公告)日：2013-01-24
申请号：JP2011148444
申请日：2011-07-04
申请人： Toshiba Corp , 株式会社東芝
发明人： WATANABE DAISUKE , NISHIYAMA KATSUYA , NAGASE TOSHIHIKO , UEDA KOJI , KAI TADASHI
IPC分类号： H01L21/8246 , H01L27/105 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L27/228 , H01L43/08 , H01L43/10
摘要： PROBLEM TO BE SOLVED: To provide a spin-injection writing type magnetoresistive element, which is thermally stable and in which reduction in a magnetoresistance ratio can be suppressed.SOLUTION: A fixed layer 2 has a configuration in which a first magnetic material film 2a provided so as to contact a non-magnetic layer 4, a non-magnetic material film 2b provided so as to contact the first magnetic material film 2a, a second magnetic material film 2c provided so as to contact the non-magnetic material film 2b, and a third magnetic material film 2d provided so as to contact the second magnetic material film 2c are stacked. The second magnetic material film 2c has a Co concentration higher than that of the first magnetic material film 2a. By letting a current flow between the fixed layer 2 and a storage layer 3 via the non-magnetic layer 4, a direction of magnetization of the storage layer 3 becomes variable.
摘要翻译：要解决的问题：提供热稳定并且可以抑制磁阻比降低的自旋注入型磁阻元件。解决方案：固定层2具有这样的构造，其中设置成接触非磁性层4的第一磁性材料膜2a，设置成与第一磁性材料膜2a接触的非磁性材料膜2b 以与非磁性材料膜2b接触的方式设置的第二磁性材料膜2c和设置成与第二磁性材料膜2c接触的第三磁性材料膜2d被堆叠。第二磁性材料膜2c的Co浓度高于第一磁性材料膜2a的Co浓度。通过在固定层2和存储层3之间经由非磁性层4的电流流动，存储层3的磁化方向变得可变。版权所有（C）2013，JPO＆INPIT

30. 发明专利

JP2012064905A Magnetoresistance effect element and magnetic memory 有权
标题翻译：磁阻效应元件和磁记忆
公开(公告)号：JP2012064905A
公开(公告)日：2012-03-29
申请号：JP2010210183
申请日：2010-09-17
申请人： Toshiba Corp , 株式会社東芝
发明人： KITAGAWA EIJI , DAIBO TATATOMI , KAI TADASHI , NAGASE TOSHIHIKO , NISHIYAMA KATSUYA , UEDA KOJI , YODA HIROAKI
IPC分类号： H01L27/105 , H01L21/8246 , H01L29/82 , H01L43/08 , H01L43/10
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： PROBLEM TO BE SOLVED: To improve the characteristics of a magnetoresistance effect element.SOLUTION: The magnetoresistance effect element comprises: a recording layer 10 having magnetic anisotropy in the direction normal to a film surface and a variable orientation of magnetization; a reference layer 20 having magnetic anisotropy in the direction normal to a film surface and a variable orientation of magnetization; a non-magnetic layer 30 provided between the recording layer 10 and the reference layer 20; an underlying layer 40 provided on the side of the recording layer 10 opposite from the side where the non-magnetic layer 30 is provided; and an underlying layer 11 provided between the recording layer 10 and the underlying layer 40. The second underlying layer is a Pd film having a concentration of 3×10atms/cmor less.
摘要翻译：要解决的问题：提高磁阻效应元件的特性。解决方案：磁阻效应元件包括：在垂直于膜表面的方向上具有磁各向异性的记录层10和磁化的可变取向; 在垂直于膜表面的方向上具有磁各向异性的参考层20和磁化的可变取向; 设置在记录层10和参考层20之间的非磁性层30; 设置在与设置非磁性层30的一侧相反的记录层10侧的下层40; 以及设置在记录层10和下面的层40之间的下层11.第二底层是浓度为3×10 6 / s的Pd膜。 POS =“POST”> 2 或更少。版权所有（C）2012，JPO＆INPIT

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