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21. 发明专利

JP2010205853A Semiconductor memory device using nonvolatile variable resistance element, and method for manufacturing the same 审中-公开
标题翻译：使用非易失性可变电阻元件的半导体存储器件及其制造方法
公开(公告)号：JP2010205853A
公开(公告)日：2010-09-16
申请号：JP2009048524
申请日：2009-03-02
申请人： Sharp Corp , シャープ株式会社
发明人： TABUCHI YOSHIAKI , HOSOI YASUNARI , AWAYA NOBUYOSHI
IPC分类号： H01L27/10 , G11C13/00 , H01L45/00 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To achieve a memory cell array of nonvolatile variable resistance elements that respectively suppress a sneak current, achieve a reduction in cell area, and are easily manufacturable. SOLUTION: A nonvolatile semiconductor memory device is configured as follows. A three-terminal type nonvolatile variable resistance element includes: a first electrode 12; a second electrode 14; a variable resistor 13 electrically connected with both of the first/second electrodes; and a control electrode 16 facing the variable resistor 13 via a dielectric layer 15. One memory cell is composed by using the three-terminal type nonvolatile variable resistance element. A plurality of the memory cells are respectively arranged in row and column directions in a matrix form. In one memory cell and the other memory cell that are adjacent to each other in the column direction, the first electrode of the one memory cell and the second electrode of the other memory cell are electrically connected to each other so as to connect the plurality of memory cells in series in the column direction, thereby constituting a column memory cell. Both ends of the column memory cell are connected to a bit line while the control electrode of the memory cell is connected to a word line extending in the row direction. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：为了实现分别抑制潜行电流的非易失性可变电阻元件的存储单元阵列，实现单元面积的减小，并且易于制造。解决方案：非易失性半导体存储器件如下构成。三端型易失性可变电阻元件包括：第一电极12; 第二电极14; 与第一/第二电极电连接的可变电阻器13; 以及通过电介质层15面对可变电阻器13的控制电极16.通过使用三端子型非易失性可变电阻元件来构成一个存储单元。多个存储单元分别以矩阵形式排列成行和列方向。在列方向上彼此相邻的一个存储单元和另一个存储单元中，一个存储单元的第一电极和另一个存储单元的第二电极彼此电连接，以便将多个存储单元在列方向上串联，从而构成列存储单元。列存储单元的两端连接到位线，同时存储单元的控制电极连接到在行方向上延伸的字线。版权所有（C）2010，JPO＆INPIT

22. 发明专利

JP2010153591A Nonvolatile variable resistor element and method of driving the same 审中-公开
标题翻译：非易失性可变电阻元件及其驱动方法
公开(公告)号：JP2010153591A
公开(公告)日：2010-07-08
申请号：JP2008330248
申请日：2008-12-25
申请人： Sharp Corp , シャープ株式会社
发明人： HOSOI YASUNARI , TABUCHI YOSHIAKI
IPC分类号： H01L27/10 , H01L45/00 , H01L49/00
CPC分类号： G11C2213/53
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile variable resistor element that is reliable and is easy to read data from. SOLUTION: There is provided a three-terminal nonvolatile variable resistor element that comprises a first electrode 12, a second electrode 14, a variable resistor 13 electrically connected to both the first and second electrodes 12 and 14, and a control electrode 16 opposite to the variable resistor 12 with a dielectric layer 15 in between. The variable resistor 13 is formed of a material that changes resistive characteristics of the nonvolatile variable resistor element in one resistive state after transition when an electric field is induced inside the variable resistor. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供可靠且易于从其读取数据的非易失性可变电阻元件。提供一种三端子非易失性可变电阻元件，其包括电连接到第一和第二电极12和14两者的第一电极12，第二电极14，可变电阻器13以及控制电极16 与可变电阻器12相对，其间具有介电层15。可变电阻器13由在可变电阻器内感应电场的转变之后的一个电阻状态下改变非易失性可变电阻元件的电阻特性的材料形成。版权所有（C）2010，JPO＆INPIT

23. 发明专利

JP2010147428A Variable resistance element and manufacturing method of the same 有权
标题翻译：可变电阻元件及其制造方法
公开(公告)号：JP2010147428A
公开(公告)日：2010-07-01
申请号：JP2008326244
申请日：2008-12-22
申请人： Sharp Corp , シャープ株式会社
发明人： ONISHI JUNYA , HOSOI YASUNARI
IPC分类号： H01L27/10 , H01L45/00 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a variable resistance element which stably shows a desired electrical characteristic, and to provide a method for manufacturing such a variable resistance element.
SOLUTION: The variable resistance element 1 is constructed, in a manner such that a first barrier film 15 (15a) is formed, in a direction orthogonal to a substrate surface of a semiconductor substrate 11 on an interface between a sidewall insulating film 16 and first insulating film 13. The first barrier film 15 (15b) also is formed on the bottom surface of the sidewall insulating film 16. These barrier films are made of a reduced species of hydrogen etc., an oxidized species of oxygen etc., or a material which has preventability of preventing diffusion of both. Moreover, a first electrode 17a is formed on the bottom surface of an opening portion 30, a second electrode 17b is formed on the upper surface of an insulating film 13 and on the upper surface of a part of side of the insulating film 13 of the sidewall insulating film 16, and a variable resistor 18 is formed so as to straddle over the upper surfaces of the electrodes.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供稳定地显示所需电特性的可变电阻元件，并提供制造这种可变电阻元件的方法。解决方案：可变电阻元件1以在第一阻挡膜15（15a）形成的方式构造在与半导体衬底11的衬底表面正交的方向上，侧壁绝缘膜 16和第一绝缘膜13.第一阻挡膜15（15b）也形成在侧壁绝缘膜16的底表面上。这些阻挡膜由还原的氢等形成，氧的氧等离子体形成。，或具有防止两者扩散的预防性的材料。此外，在开口部分30的底表面上形成第一电极17a，在绝缘膜13的上表面上形成第二电极17b，在绝缘膜13的一侧的上表面上形成第二电极17b。侧壁绝缘膜16和可变电阻器18形成为跨越电极的上表面。版权所有（C）2010，JPO＆INPIT

24. 发明专利

JP2010040110A Nonvolatile memory cell, nonvolatile semiconductor memory device and method of driving the same 有权
标题翻译：非易失性存储器单元，非易失性半导体存储器件及其驱动方法
公开(公告)号：JP2010040110A
公开(公告)日：2010-02-18
申请号：JP2008202500
申请日：2008-08-06
申请人： Sharp Corp , シャープ株式会社
发明人： NAKANO TAKASHI , HOSOI YASUNARI
IPC分类号： G11C13/00
CPC分类号： G11C13/003 , G11C13/0004 , G11C13/0007 , G11C2213/74
摘要： PROBLEM TO BE SOLVED: To provide a nonvolatile memory cell and a nonvolatile semiconductor memory device that supply a current required for rewriting of data without increasing current supply capability of a transistor, wherein error writing and incorrect reading are prevented. SOLUTION: A terminal r1 of a variable resistive element R is connected to a bit line B and the other terminal r2 is connected to one terminal d1 of a diode D. Also the other terminal d2 of the diode D is connected to a bulk line BK. Out of terminals of a transistor T, a terminal t1 which constitutes a gate is connected to a word line W. A terminal t2 is connected to a source line S, and a terminal t3 is connected to any one terminal among the terminal d2 of the diode D, the terminal r1 or r2 of the variable resistive element R. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种非易失性存储单元和非易失性半导体存储器件，其提供在不增加晶体管的电流供应能力的情况下重写数据所需的电流，其中防止错误写入和错误读取。解决方案：可变电阻元件R的端子r1连接到位线B，另一端子r2连接到二极管D的一个端子d1。二极管D的另一端子d2连接到批量BK。在晶体管T的端子之外，构成栅极的端子t1连接到字线W.端子t2连接到源极线S，端子t3连接到源极线S的端子d2中的任何一个端子二极管D，可变电阻元件R的端子r1或r2。版权所有（C）2010，JPO＆INPIT

25. 发明专利

JP2006019444A Method for driving variable resistor element and storage device 有权
标题翻译：用于驱动可变电阻元件和存储器件的方法
公开(公告)号：JP2006019444A
公开(公告)日：2006-01-19
申请号：JP2004194799
申请日：2004-06-30
申请人： Sharp Corp , シャープ株式会社
发明人： HOSOI YASUNARI , TAMAI YUKIO , ISHIHARA KAZUYA , KOBAYASHI SHINJI , AWAYA NOBUYOSHI
IPC分类号： H01L27/105 , G11C13/00
CPC分类号： G11C29/50 , G11C13/0007 , G11C13/0069 , G11C29/50008 , G11C2013/009 , G11C2213/31
摘要： PROBLEM TO BE SOLVED: To provide a method of driving a variable resistor element including a perovskite oxide with electric resistance varying by applying voltage pulses, capable of stably keeping reversible resistance variation operations. SOLUTION: The variable resistor element is formed by providing the perovskite oxide 2 between a first electrode 1 and a second electrode 3. The element has resistance history characteristics that the electric resistance between the first electrode 1 and the second electrode 3 varies by applying voltage pulses with constant polarity between the first and second electrodes 1 and 3, and further the rate of change in the resistance value changes from positive to negative for an increase in accumulated pulse applied time during the application of the voltage pulses. The voltage pulses are applied to the variable resistor element so that the accumulated pulse applied time does not exceed the specific accumulated pulse applied time when the rate of change in the resistance value for the increase in the accumulated pulse applied time changes from positive to negative in the resistance history characteristics. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种驱动包括钙电位氧化物的可变电阻元件的方法，其中电阻通过施加电压脉冲而变化，能够稳定地保持可逆电阻变化操作。解决方案：可变电阻器元件通过在第一电极1和第二电极3之间提供钙钛矿氧化物2而形成。元件具有电阻历史特性，即第一电极1和第二电极3之间的电阻变化在第一和第二电极1和3之间施加具有恒定极性的电压脉冲，并且进一步地，在施加电压脉冲期间累积脉冲施加时间的增加，电阻值的变化率从正变化到负。电压脉冲被施加到可变电阻元件，使得当累积脉冲施加时间的增加的电阻值的变化率从正向变化到负时，累积脉冲施加时间不超过特定累积脉冲施加时间电阻历史特征。版权所有（C）2006，JPO＆NCIPI

26. 发明专利

JP2003045174A Semiconductor memory device 审中-公开
标题翻译：半导体存储器件
公开(公告)号：JP2003045174A
公开(公告)日：2003-02-14
申请号：JP2001233809
申请日：2001-08-01
申请人： Sharp Corp , シャープ株式会社
发明人： HOSOI YASUNARI
IPC分类号： G11C11/22 , H01L21/8246 , H01L27/105
CPC分类号： G11C11/22
摘要： PROBLEM TO BE SOLVED: To highly integrate a semiconductor memory device.
SOLUTION: Memory cells MC of M pieces connected in series to a ferroelectric capacitor FC and a transistor CRT for selection are connected in parallel between a drive line DL and a bit line BL. One end of the bit line BL is connected to a gate electrode of a transistor STR for read-out. Thus, the number of memory cells connected to the bit line BL can be decreased without increasing area and cost like in the case of using a sense amplifier, and wiring capacitance of the bit line BL can be reduced. Consequently, a potential induced in the bit line can be assumed not to depend on residual polarization of the ferroelectric capacitor FC. Therefore, the area of the ferroelectric capacitor FC can be reduced to highly integrate the semiconductor memory device.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：高度集成半导体存储器件。解决方案：串联连接到铁电电容器FC和用于选择的晶体管CRT的M个部件的存储单元MC并联连接在驱动线DL和位线BL之间。位线BL的一端连接到用于读出的晶体管STR的栅电极。因此，与使用读出放大器的情况相同，可以减小连接到位线BL的存储单元的数量，而不增加面积和成本，并且可以减少位线BL的布线电容。因此，可以假设在位线中感应的电位不依赖于铁电电容器FC的剩余极化。因此，可以减小铁电电容器FC的面积，以使半导体存储器件高度集成。

27. 发明专利

JP2011165522A Vehicle-mounted headlight device 审中-公开
标题翻译：车载安装头灯
公开(公告)号：JP2011165522A
公开(公告)日：2011-08-25
申请号：JP2010028194
申请日：2010-02-10
申请人： Sharp Corp , シャープ株式会社
发明人： ONISHI TETSUYA , HOSOI YASUNARI
IPC分类号： F21S8/12 , B60Q1/14 , B60Q11/00 , F21W101/10 , F21Y101/02
摘要： PROBLEM TO BE SOLVED: To provide a vehicle-mounted headlight device that does not increase air resistance, does not becomes a projection damaging a human body, does not cause illuminance deterioration due to dirt, and does not restrict flexibility of an appearance design of a front face of a vehicle. SOLUTION: A headlight device contained inside an outer surface of a vehicle body includes: a headlight body with a built-in light emitting element; a vehicle body element member located ahead of the front surface of the headlight body and having one or more light projection holes; and a driving part reversibly moving or rotating the headlight body to a position where light emitted from the light emitting element is projected to the outside of the vehicle through the light projection holes. In the vehicle-mounted headlight device, the light projection hole includes an open hole penetrating through the vehicle body element member. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供不增加空气阻力的车载前照灯装置，不会成为损坏人体的投影，不会引起由于污物引起的照度劣化，并且不会限制外观的柔性车辆前面的设计。解决方案：包含在车身外表面内的头灯装置包括：具有内置发光元件的前照灯体; 位于前灯前表面的车体元件，具有一个或多个光投射孔; 以及驱动部，其可逆地将前灯体移动或旋转到通过所述光投射孔向从所述发光元件射出的光投射到所述车辆外部的位置。在车载前照灯装置中，光投射孔包括穿透车体元件的开放孔。版权所有（C）2011，JPO＆INPIT

28. 发明专利

JP2010062265A Variable resistor element, method of manufacturing the same, and method of driving the same 审中-公开
标题翻译：可变电阻元件及其制造方法及其驱动方法
公开(公告)号：JP2010062265A
公开(公告)日：2010-03-18
申请号：JP2008225157
申请日：2008-09-02
申请人： Sharp Corp , シャープ株式会社
发明人： TABUCHI YOSHIAKI , HOSOI YASUNARI
IPC分类号： H01L27/10 , H01L45/00 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a variable resistor element capable of increasing the repeatability of a switching operation and facilitating its construction design.
SOLUTION: In the variable resistor element, a first electrode 13, a second electrode 16 and a variable resistor 15 formed between the electrodes are formed on a substrate 11 and electric resistance between the electrodes is reversibly changed by applying voltage pulses between the electrodes. The variable resistor 15 is constituted of a predetermined variable resistor film and includes at least one seam 32 extending from the first electrode 13 toward the second electrode 16 in an area thicker than other areas. The variable resistor 15 is formed to have the seam by film-deposition at its step or an opening.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够增加开关操作的可重复性并促进其结构设计的可变电阻元件。解决方案：在可变电阻器元件中，形成在电极之间的第一电极13，第二电极16和可变电阻器15形成在基板11上，并且电极之间的电阻通过在电极之间施加电压脉冲而被可逆地改变电极。可变电阻器15由预定的可变电阻膜构成，并且包括在比其他区域更厚的区域中从第一电极13朝向第二电极16延伸的至少一个接缝32。可变电阻器15形成为在其台阶或开口处具有通过成膜沉积的接缝。版权所有（C）2010，JPO＆INPIT

29. 发明专利

JP2008243263A Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：JP2008243263A
公开(公告)日：2008-10-09
申请号：JP2007079991
申请日：2007-03-26
申请人： Sharp Corp , シャープ株式会社
发明人： ISHIHARA KAZUYA , AWAYA NOBUYOSHI , HOSOI YASUNARI , SATO SHINICHI , HORII SHINJI
IPC分类号： G11C13/00
CPC分类号： G11C11/5685 , G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/31
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor memory device for surely rewriting data in a memory cell array including a variable resistance element at high speed and with low electric power. SOLUTION: The semiconductor memory device has a memory cell array 30 having memory cells 20 arrayed in a matrix shape, the memory cell 20 being composed of: a variable resistance element 21 having an electric resistance shifting from a first state to a second state when a first rewriting voltage is applied to the element and from the second state to the first state when a second rewriting voltage is applied to the element; and a selection transistor 22 with a source or a drain connected to the one end of the variable resistance element 21. The semiconductor memory device also has a means for sequentially executing the following processing: initializing processing for sequentially selecting a first predetermined number or less of memory cells among all the memory cells, and sequentially executing the rewriting operation based on the application of the first rewriting voltage to set all electric resistances to the second state; and individual rewriting processing for sequentially selecting, a second predetermined number or less of memory cells among some memory cells whose electric resistances are set to the first state, and sequentially executing a rewriting operation based on application of the second rewriting voltage. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于在包括可变电阻元件的存储单元阵列中以高速和低功率可靠地重写数据的半导体存储器件。解决方案：半导体存储器件具有存储单元阵列30，存储单元阵列30以矩阵形式排列，存储单元20由以下部分组成：可变电阻元件21，其电阻从第一状态转变到第二状态当向元件施加第二重写电压时，向元件施加第一重写电压并从第二状态施加到第一状态的状态; 以及选择晶体管22，其源极或漏极连接到可变电阻元件21的一端。半导体存储器件还具有用于顺序执行以下处理的装置：用于顺序地选择第一预定数量或更小的初始化处理的初始化处理存储器单元，并且基于施加第一重写电压来顺序地执行重写操作，以将所有电阻设置为第二状态; 以及单独重写处理，用于在电阻被设置为第一状态的一些存储单元中顺序地选择第二预定数量或更少的存储单元，并且基于施加第二重写电压来顺序地执行重写操作。版权所有（C）2009，JPO＆INPIT

30. 发明专利

JP2007180473A Variable resistance element and manufacturing method thereof 有权
标题翻译：可变电阻元件及其制造方法
公开(公告)号：JP2007180473A
公开(公告)日：2007-07-12
申请号：JP2006125432
申请日：2006-04-28
申请人： Sharp Corp , シャープ株式会社
发明人： HOSOI YASUNARI , ISHIHARA KAZUYA , SHIBUYA TAKAHIRO , ONISHI TETSUYA , NAKANO TAKASHI
IPC分类号： H01L27/10 , H01L45/00 , H01L49/00 , H01L49/02
CPC分类号： H01L45/1253 , H01L27/101 , H01L27/2436 , H01L27/2463 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/124 , H01L45/1273 , H01L45/145 , H01L45/146 , H01L45/16 , H01L45/1616 , H01L45/1625 , H01L45/1633 , H01L45/1691
摘要： PROBLEM TO BE SOLVED: To provide a variable resistance element having a structure in which the area of an electrically contributing region of a variable resistor is a minutely smaller than an area defined by an upper electrode or a lower electrode, and to provide a manufacturing method thereof. SOLUTION: A protruding electrode 2 is formed on the upper surface of the lower electrode 1 to be arranged on a base substrate 5. The protruding electrode 2 is allowed to contact the variable resistor 3 on a surface different from the contact surface of the lower electrode 1, and this variable resistor 3 contacts the upper electrode 4 on a surface different from the contacting surface of the protruding electrode 2. Since this makes a region of an electrically contributing crosspoint variable resistor between the protruding electrode 2 (variable resistor 3) and the upper electrode 4, its area is made to be smaller than that of an area of a conventional variable resistor element. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种可变电阻元件，其具有这样的结构，其中可变电阻器的电区域的面积比由上电极或下电极限定的面积小得多，并且提供其制造方法。解决方案：在下电极1的上表面上形成突起电极2，以布置在基底5上。使突出电极2与不同于接触表面的表面的可变电阻器3接触下电极1和该可变电阻器3在与突出电极2的接触表面不同的表面上接触上电极4.由于这是在突出电极2（可变电阻器3 ）和上部电极4的面积比现有的可变电阻元件的面积小。版权所有（C）2007，JPO＆INPIT

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