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21. 发明授权

US5258091A Method of producing X-ray window 失效
标题翻译： X射线窗口的制作方法
公开(公告)号：US5258091A
公开(公告)日：1993-11-02
申请号：US882683
申请日：1992-05-12
申请人： Takahiro Imai , Naoji Fujimori
发明人： Takahiro Imai , Naoji Fujimori
IPC分类号： H01J35/18 , H01L21/20 , C30B25/00
CPC分类号： H01J35/18 , H01J2235/183
摘要： An X-ray window having a diamond X-ray transparent film, diamond reinforcing crosspieces and a substrate on which the diamond X-ray transparent film has been grown. As reinforcing crosspieces are made of diamond, no thermal stress is generated between the X-ray transparent film and the crosspieces. This mask excels in flatness, transmittance of X-rays, and strength.
摘要翻译：具有金刚石X射线透明膜的X射线窗，金刚石加强肋和已经生长了金刚石X射线透明膜的基板。由于加强挡板由金刚石制成，所以在X射线透明膜和挡条之间不产生热应力。该面膜的平面度，X射线透过率和强度均优异。

22. 发明授权

US5111491A X-ray lithography mask and method for producing same 失效
标题翻译： X射线光刻掩模及其制造方法
公开(公告)号：US5111491A
公开(公告)日：1992-05-05
申请号：US747950
申请日：1991-08-21
申请人： Takahiro Imai , Naoji Fujimori
发明人： Takahiro Imai , Naoji Fujimori
IPC分类号： G03F1/22 , H01L21/027
CPC分类号： G03F1/22
摘要： An X-ray lithography mask comprising a X-ray transparent film made from diamond, X-ray absorber patterns deposited on the X-ray transparent film and diamond crosspieces shaped on the diamond X-ray transparent film for reinforcing the diamond X-ray transparent film. Since both the transparent film and the reinforcing crosspieces are made from diamond, no thermal stress is induced by the change of temperature. The mask excels in transmittance for X-ray, flatness and strength.

23. 发明授权

US5079425A Radiation detecting element 失效
标题翻译：辐射检测元件
公开(公告)号：US5079425A
公开(公告)日：1992-01-07
申请号：US639085
申请日：1991-01-09
申请人： Takahiro Imai , Tetsuo Yashiki , Naoji Fujimori
发明人： Takahiro Imai , Tetsuo Yashiki , Naoji Fujimori
IPC分类号： G01T1/26
CPC分类号： G01T1/26
摘要： A radiation detecting element comprising a pair of electrode and a semiconductor layer interposed between said pair of electrodes wherein said semiconductor layer comprises a polycrystal diamond having no grain boundary in a direction in which a voltage is applied, and an electric current flows through said semiconductor layer from one electrode to the other without crossing a grain boundary, which element has high sensitivity and a high response speed.
摘要翻译：一种放射线检测元件，包括一对电极和插入在所述一对电极之间的半导体层，其中所述半导体层包括在施加电压的方向上没有晶界的多晶金刚石，并且电流流过所述半导体层从一个电极到另一个电极不交叉晶界，该元件具有高灵敏度和高响应速度。

24. 发明授权

US4863529A Thin film single crystal diamond substrate 失效
标题翻译：薄膜单晶金刚石基板
公开(公告)号：US4863529A
公开(公告)日：1989-09-05
申请号：US165711
申请日：1988-03-08
申请人： Takahiro Imai , Naoji Fujimori
发明人： Takahiro Imai , Naoji Fujimori
IPC分类号： C30B25/02 , C30B25/18 , H01L21/20
CPC分类号： C30B25/18 , C30B25/02 , C30B29/04 , H01L21/02381 , H01L21/02395 , H01L21/02447 , H01L21/02527 , H01L21/0262 , H01L21/02579 , Y10S148/148
摘要： A thin film single crystal diamond substrate which comprises a base substrate selected from the group consisting of a single crystal silicon substrate and a single crystal GaAs substrate, an intermediate layer consisting of single crystal silicon carbide formed on the base substrate and a thin film of single crystal diamond which is epitaxially grown on the intermediate layer, which can have a large area and be easily and economically produced.

25. 发明授权

US5879811A Oxide thin film having quartz crystal structure 失效
标题翻译：具有石英晶体结构的氧化物薄膜
公开(公告)号：US5879811A
公开(公告)日：1999-03-09
申请号：US502672
申请日：1995-07-14
申请人： Motoyuki Tanaka , Takahiro Imai , Naoji Fujimori
发明人： Motoyuki Tanaka , Takahiro Imai , Naoji Fujimori
IPC分类号： C23C14/10 , C23C16/40 , C23C18/12 , C30B5/00 , C30B23/02 , C30B25/02 , B32B9/00
CPC分类号： C30B23/02 , C23C14/10 , C23C16/401 , C23C18/1216 , C23C18/1254 , C23C18/1279 , C30B25/02 , C30B29/18 , C30B5/00
摘要： An oxide thin film having a quartz crystal structure formed on a substrate, the oxide thin film being composed of a single layer or a plurality of layers having a thickness of 5 nm to 50 .mu.m per layer, each of the layer comprising silicon dioxide, germanium dioxide, or a mixture thereof.
摘要翻译：一种在基板上形成有石英晶体结构的氧化物薄膜，所述氧化物薄膜由每一层厚度为5nm至50μm的单层或多层组成，所述层包含二氧化硅，二氧化锗或其混合物。

26. 发明授权

US5682063A Substrate for semiconductor device 失效
标题翻译：半导体器件基板
公开(公告)号：US5682063A
公开(公告)日：1997-10-28
申请号：US583542
申请日：1996-01-05
申请人： Yoshiyuki Yamamoto , Takahiro Imai , Naoji Fujimori
发明人： Yoshiyuki Yamamoto , Takahiro Imai , Naoji Fujimori
IPC分类号： H01L23/12 , H01L23/14 , H01L23/373 , H01L23/498 , H01L23/053
CPC分类号： H01L23/49894 , H01L23/14 , H01L23/3732 , H01L2924/0002
摘要： The present invention relates to a substrate for a semiconductor device having a diamond base material and a multisublayer wiring layer on the diamond base material, wherein the diamond base material is a diamond layer prepared by vapor phase deposition. The multisublayer wiring layer has at least one insulating sublayer having a relative dielectric constant of not larger than 5 or at least 12 and at least one metal wiring sublayer. The present invention is particularly useful as a substrate for a high performance, high-speed operation semiconductor device.
摘要翻译：本发明涉及一种在金刚石基材上具有金刚石基材和多层布线层的半导体器件用基板，其中金刚石基材是通过气相沉积制备的金刚石层。多层布线层具有至少一个具有不大于5或至少12的相对介电常数的绝缘子层和至少一个金属布线子层。本发明特别适用于高性能，高速运行半导体器件的基板。

27. 发明授权

US5499601A Method for vapor phase synthesis of diamond 失效
标题翻译：金刚石气相合成方法
公开(公告)号：US5499601A
公开(公告)日：1996-03-19
申请号：US302879
申请日：1994-09-14
申请人： Takahiro Imai , Takashi Tsuno , Yoshiyuki Yamamoto , Naoji Fujimori
发明人： Takahiro Imai , Takashi Tsuno , Yoshiyuki Yamamoto , Naoji Fujimori
IPC分类号： C01B31/06 , C23C16/02 , C23C16/27 , C30B11/00 , C30B25/02 , C30B25/18
CPC分类号： C30B25/18 , C01B31/06 , C23C16/0227 , C23C16/27 , C30B11/00 , C30B25/02 , C30B29/04
摘要： Diamond particles are dispersed in a metal and the metal matrix is molten and recrystallized so that the diamond particles are aligned to the same crystal orientation to form a substrate equivalent to a diamond single crystal substrate and then the diamond is grown by a vapor phase synthesis on the substrate. The diamond single crystal having the homogeneity and good quality can be formed and the diamond single crystal having a large area can be easily and economically obtained.
摘要翻译： PCT No.PCT / JP94 / 00035 Sec。 371日期：1994年9月14日 102（e）1994年9月14日PCT PCT 1994年1月13日PCT公布。第WO94 / 16125号PCT公告日期为1994年7月21日。金刚石颗粒分散在金属中，金属基体熔融并重结晶，使得金刚石颗粒与相同的晶体取向对准以形成与金刚石单晶基板相当的基底，然后金刚石为通过基底上的气相合成生长。可以形成具有均匀性和良好质量的金刚石单晶，并且可以容易且经济地获得具有大面积的金刚石单晶。

28. 发明授权

US5420879A Solid state laser 失效
标题翻译：固体激光
公开(公告)号：US5420879A
公开(公告)日：1995-05-30
申请号：US120757
申请日：1993-09-15
申请人： Hiroshi Kawarada , Takahiro Imai , Yoshiki Nishibayashi , Naoji Fujimori
发明人： Hiroshi Kawarada , Takahiro Imai , Yoshiki Nishibayashi , Naoji Fujimori
IPC分类号： H01S3/02 , H01S3/0959 , H01S3/16 , H01S5/30
CPC分类号： H01S3/0959 , H01S3/16 , H01S5/30
摘要： A solid state laser includes a diamond crystal as a medium of laser beam emission, which generates a laser beam having a wavelength of 225 to 300 nm through exciton light emission.
摘要翻译：固体激光器包括作为激光束发射介质的金刚石晶体，其通过激子发光产生具有225至300nm的波长的激光束。

29. 发明授权

US5400738A Method for producing single crystal diamond film 失效
标题翻译：单晶金刚石薄膜的制造方法
公开(公告)号：US5400738A
公开(公告)日：1995-03-28
申请号：US987557
申请日：1992-12-08
申请人： Hiromu Shiomi , Takahiro Imai , Naoji Fujimori
发明人： Hiromu Shiomi , Takahiro Imai , Naoji Fujimori
IPC分类号： C30B29/04 , C30B25/02
CPC分类号： C30B25/02 , C30B29/04 , Y10S117/919
摘要： A single crystal diamond film having good crystallinity and electrical and optical characteristics is produced by a method which comprises steps of decomposing a raw material gas comprising a hydrogen gas, a carbon containing compound and an oxygen-containing compound and growing a single crystal diamond film on a substrate in a vapor phase.
摘要翻译：具有良好的结晶度和电学和光学特性的单晶金刚石膜通过包括以下步骤的方法制备：将包含氢气，含碳化合物和含氧化合物的原料气体分解并生长单晶金刚石膜气相中的底物。

30. 发明授权

US5380516A Process for synthesizing diamond in a vapor phase 失效
标题翻译：在气相中合成金刚石的方法
公开(公告)号：US5380516A
公开(公告)日：1995-01-10
申请号：US931494
申请日：1992-08-21
申请人： Keiichiro Tanabe , Takahiro Imai , Naoji Fujimori
发明人： Keiichiro Tanabe , Takahiro Imai , Naoji Fujimori
IPC分类号： C23C16/27 , C30B25/02 , C01B31/65
CPC分类号： C23C16/27 , C23C16/277 , C30B25/02 , C30B29/04
摘要： The present invention relates to a method for synthesizing diamond by chemical vapor deposition (CVD) process, and specifically a chemical deposition process which allows production of diamond of high purity and high crystallizability having various uses at low cost and at high speed. In the first method for the present invention, a mixture of oxygen gas and a carbon-containing compound gas and optionally an inert gas is introduced into a reaction vessel and a plasma is generated by use of an electromagnetic field, thereby producing diamond on a substrate placed in the vessel. In the second method of the present invention, a mixture containing at least one of fluorine gas, chlorine gas, a nitrogen oxide gas and sulfur dioxide gas, or a mixture of the gas mixture with oxygen gas and a carbon-containing compound gas, or a mixture thereof with an inert gas is introduced into a reaction vessel, and a plasma is generated by use of an electromagnetic field, thereby producing diamond on a base material placed in the vessel.
摘要翻译： PCT No.PCT / JP89 / 00531 Sec。 371 1990年1月24日第 102（e）日期1990年1月24日PCT提交1989年5月25日PCT公布。出版物WO89 / 11556 日本特开1989年1月30日。本发明涉及通过化学气相沉积（CVD）方法合成金刚石的方法，具体地说涉及一种化学沉积方法，该方法允许以低成本生产具有各种用途的高纯度和高结晶度的金刚石，高速在本发明的第一种方法中，将氧气和含碳化合物气体和任选的惰性气体的混合物引入反应容器中，并且通过使用电磁场产生等离子体，由此在衬底上产生金刚石放在船上在本发明的第二种方法中，含有氟气，氯气，氮氧化物气体和二氧化硫气体中的至少一种的混合物，或气体混合物与氧气和含碳化合物气体的混合物，或将其与惰性气体的混合物引入反应容器中，并且通过使用电磁场产生等离子体，从而在放置在容器中的基材上产生金刚石。

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