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21. 发明申请

US20110248241A1 NITRIDE SEMICONDUCTOR ELEMENT 有权
标题翻译：氮化物半导体元件
公开(公告)号：US20110248241A1
公开(公告)日：2011-10-13
申请号：US12961134
申请日：2010-12-06
申请人： Jun Shimizu , Shinichi Kohda , Yasuhiro Yamada , Naohide Wakita , Masahiro Ishida
发明人： Jun Shimizu , Shinichi Kohda , Yasuhiro Yamada , Naohide Wakita , Masahiro Ishida
IPC分类号： H01L29/15
CPC分类号： H01L21/02381 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/2003 , H01L29/7787 , H01L29/872
摘要： A nitride semiconductor element includes: a strain suppression layer formed on a silicon substrate via an initial layer; and an operation layer formed on the strain suppression layer. The strain suppression layer includes a first spacer layer, a second spacer layer formed on and in contact with the first spacer layer, and a superlattice layer formed on and in contact with the second spacer layer. The first spacer layer is larger in lattice constant than the second spacer layer. The superlattice layer has first layers and second layers smaller in lattice constant than the first layers stacked alternately on top of one another. The average lattice constant of the superlattice layer is smaller than the lattice constant of the first spacer layer and larger than the lattice constant of the second spacer layer.
摘要翻译：氮化物半导体元件包括：通过初始层在硅衬底上形成的应变抑制层; 以及形成在应变抑制层上的操作层。应变抑制层包括第一间隔层，与第一间隔层形成并与第一间隔层接触的第二间隔层，以及形成在第二间隔层上并与第二间隔层接触的超晶格层。第一间隔层的晶格常数大于第二间隔层。超晶格层具有第一层和第二层，其晶格常数比交替堆叠在一起的第一层更小。超晶格层的平均晶格常数小于第一间隔层的晶格常数，并且大于第二间隔层的晶格常数。

22. 发明授权

US07939429B2 Nitride semiconductor device and method of manufacturing the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US07939429B2
公开(公告)日：2011-05-10
申请号：US12219539
申请日：2008-07-23
申请人： Shinichi Kohda
发明人： Shinichi Kohda
IPC分类号： H01L21/20 , H01S3/04
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/0095 , H01S5/0201 , H01S5/0202 , H01S5/22
摘要： A method of manufacturing a nitride semiconductor device includes the steps of: forming a division guide groove by applying a laser beam having a wavelength and energy density causing multiphoton absorption to a surface of a substrate having a group III nitride semiconductor layer grown on a major surface thereof; removing deposits from the surface of the substrate by applying a laser beam having the wavelength to the surface of the substrate at energy density causing substantially no multiphoton absorption on the substrate; and dividing the substrate along the division guide groove.
摘要翻译：一种制造氮化物半导体器件的方法包括以下步骤：通过将具有导致多光子吸收的波长和能量密度的激光束施加到具有在主表面上生长的III族氮化物半导体层的衬底的表面来形成分割引导槽的; 通过将具有波长的激光束施加到衬底表面的能量密度，从而从衬底的表面去除沉积物，从而在衬底上基本上不产生多光子吸收; 并且沿着分割引导槽分割基板。

23. 发明授权

US07885303B2 Nitride semiconductor laser device and method of manufacturing the same 有权
标题翻译：氮化物半导体激光器件及其制造方法
公开(公告)号：US07885303B2
公开(公告)日：2011-02-08
申请号：US12344352
申请日：2008-12-26
申请人： Shinichi Kohda , Yuji Ishida
发明人： Shinichi Kohda , Yuji Ishida
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2924/10156 , H01S5/042 , H01S5/32341 , H01S5/34333 , H01L2924/00014 , H01L2924/00
摘要： A nitride semiconductor laser device is formed by growing a group III nitride semiconductor multilayer structure on a substrate. The group III nitride semiconductor multilayer structure has a laser resonator including an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer. The laser resonator is arranged to be offset from the center with respect to a device width direction orthogonal to a resonator direction toward one side edge of the device. A wire bonding region having a width of not less than twice the diameter of an electrode wire to be bonded to the device is formed between the laser resonator and the other side edge of the device.
摘要翻译：通过在基板上生长III族氮化物半导体多层结构来形成氮化物半导体激光器件。 III族氮化物半导体多层结构具有包括n型半导体层，p型半导体层和保持在n型半导体层和p型半导体层之间的发光层的激光谐振器。激光谐振器被布置成相对于朝向与器件的一个侧边缘的谐振器方向正交的器件宽度方向从中心偏移。在激光谐振器和装置的另一侧边缘之间形成具有不小于要与器件接合的电极线的直径的两倍的宽度的引线接合区域。

24. 发明申请

US20100008391A1 Nitride based semiconductor device and fabrication method for the same 有权
标题翻译：氮化物基半导体器件及其制造方法
公开(公告)号：US20100008391A1
公开(公告)日：2010-01-14
申请号：US12379945
申请日：2009-03-04
申请人： Daisuke Nakagawa , Yoshinori Tanaka , Masahiro Murayama , Takao Fujimori , Shinichi Kohda
发明人： Daisuke Nakagawa , Yoshinori Tanaka , Masahiro Murayama , Takao Fujimori , Shinichi Kohda
IPC分类号： H01S5/00 , H01L29/205 , H01L29/15
CPC分类号： H01S5/34333 , B82Y20/00 , H01L29/2003 , H01S5/0021 , H01S5/0202 , H01S5/028 , H01S5/0282 , H01S5/0287 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/2214 , H01S5/305 , H01S5/3063 , H01S5/3201 , H01S5/3211 , H01S5/3215 , H01S5/3216 , H01S2301/173 , H01S2301/185
摘要： A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided.
摘要翻译：氮化物基半导体器件包括：n型覆层; 放置在n型覆层上的n型GaN基引导层; 置于n型GaN基引导层上的有源层; 放置在有源层上的p型GaN基引导层; 放置在p型GaN基引导层上的电子阻挡层; 放置在电子阻挡层上的应力松弛层; 和位于应力松弛层上的p型覆层，并且氮化物基半导体器件减轻在电子阻挡层的影响下发生的应力，不影响电子阻挡层的光分布，降低阈值电流，可以抑制可靠性的劣化可以抑制激光束的发射端面的劣化，可以提高远场图案，并且持久，并且还提供了该装置的制造方法。

25. 发明申请

US20090045486A1 Method of manufacturing nitride semiconductor device 审中-公开
标题翻译：氮化物半导体器件的制造方法
公开(公告)号：US20090045486A1
公开(公告)日：2009-02-19
申请号：US12219692
申请日：2008-07-25
申请人： Shinichi Kohda
发明人： Shinichi Kohda
IPC分类号： H01L29/20 , H01L21/304
CPC分类号： H01L33/0095 , H01L33/007
摘要： A method of manufacturing a nitride semiconductor device includes the steps of: forming a mask of a pattern selectively covering a cutting line on a first major surface of a substrate; forming group III nitride semiconductor layers exposing the mask provided on the cutting line by selectively growing a group III nitride semiconductor from exposed portions of the first major surface of the substrate; forming a division guide groove on the substrate along the cutting line; and dividing the substrate along the division guide groove. The step of forming the division guide groove may be a step of forming the division guide groove by laser processing.
摘要翻译：一种制造氮化物半导体器件的方法包括以下步骤：形成选择性地覆盖衬底的第一主表面上的切割线的图案的掩模; 通过从衬底的第一主表面的暴露部分选择性地生长III族氮化物半导体，形成III族氮化物半导体层，暴露设在切割线上的掩模; 沿着切割线在基板上形成分割导向槽; 并且沿着分割引导槽分割基板。形成分割导向槽的步骤可以是通过激光加工形成分割导向槽的步骤。

26. 发明申请

US20070026550A1 Method of manufacturing semiconductor light emitting apparatus and semiconductor light emitting apparatus 审中-公开
标题翻译：制造半导体发光装置和半导体发光装置的方法
公开(公告)号：US20070026550A1
公开(公告)日：2007-02-01
申请号：US11483314
申请日：2006-07-06
申请人： Masahiro Murayama , Daisuke Nakagawa , Shinichi Kohda , Toshio Nishida
发明人： Masahiro Murayama , Daisuke Nakagawa , Shinichi Kohda , Toshio Nishida
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/20 , H01S5/2009 , H01S5/22 , H01S2304/12
摘要： A method of manufacturing a semiconductor light emitting apparatus according to the invention includes: the mask layer forming step of forming two mask layers in descending order of etching rates from a side near a p-type semiconductor layer; the mask layer etching step; the semiconductor layer etching step; the side etching step of selectively etching a side surface of a mask layer having a high etching rate to form a groove portion in the p-type semiconductor layer; the insulating film forming step of forming an insulating film so as to cover the p-type semiconductor layer; the mask layer removing step; and the electrode layer forming step. A semiconductor light emitting apparatus according to the invention includes: a substrate; an n-type semiconductor layer; an active layer; a p-type semiconductor layer on which a mesa portion projecting above the active layer is formed; an insulating film which covers the mesa portion to expose an upper surface of the mesa portion; and an electrode layer. Then-type semiconductor layer, the active layer, and the p-type semiconductor layer are made of a Group III nitride based compound semiconductor.
摘要翻译：根据本发明的制造半导体发光装置的方法包括：掩模层形成步骤，从p型半导体层附近的一侧以蚀刻速率的降序形成两个掩模层; 掩模层蚀刻步骤; 半导体层蚀刻步骤; 侧蚀刻步骤，选择性地蚀刻具有高蚀刻速率的掩模层的侧表面，以在p型半导体层中形成沟槽部分; 所述绝缘膜形成步骤形成绝缘膜以覆盖所述p型半导体层; 掩模层去除步骤; 和电极层形成步骤。根据本发明的半导体发光装置包括：基板; n型半导体层; 活性层形成在有源层上方突出的台面部的p型半导体层; 绝缘膜，其覆盖所述台面部，露出所述台面部的上表面; 和电极层。随后型半导体层，有源层和p型半导体层由III族氮化物基化合物半导体制成。

27. 发明申请

US20060084245A1 Semiconductor device, semiconductor device production method, and substrate for the semiconductor device 审中-公开
标题翻译：半导体装置，半导体装置制造方法以及半导体装置用基板
公开(公告)号：US20060084245A1
公开(公告)日：2006-04-20
申请号：US11231822
申请日：2005-09-22
申请人： Shinichi Kohda
发明人： Shinichi Kohda
IPC分类号： H01L21/20
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L21/02647
摘要： A semiconductor device production method includes the steps of: forming a linear gallium nitride stripe pattern on a major surface of a substrate, the major surface of the substrate being offset from a predetermined crystal plane by offset angles of 0.1 degree to 0.5 degrees respectively defined with respect to a first crystal axis and a second crystal axis parallel to the predetermined crystal plane, the linear gallium nitride stripe pattern extending along the first crystal axis; and growing a gallium nitride compound semiconductor crystal along the predetermined crystal plane by selective lateral epitaxial growth to form a gallium nitride compound semiconductor layer on the major surface of the substrate formed with the gallium nitride stripe pattern. The first crystal axis and the second crystal axis may be perpendicular to each other. The substrate may be a sapphire substrate, a silicon carbide substrate, an aluminum nitride substrate or a gallium nitride substrate. In this case, the predetermined crystal plane is preferably a C-plane.
摘要翻译：半导体器件制造方法包括以下步骤：在基板的主表面上形成线状氮化镓条纹图案，基板的主表面偏离预定的晶面，偏移角分别为0.1度至0.5度，相对于与所述预定晶面平行的第一晶轴和第二晶轴，所述线状氮化镓条纹图案沿着所述第一晶轴延伸; 以及通过选择性的横向外延生长沿着预定晶面生长氮化镓化合物半导体晶体，以在形成有氮化镓条纹图案的衬底的主表面上形成氮化镓化合物半导体层。第一晶轴和第二晶轴可以彼此垂直。衬底可以是蓝宝石衬底，碳化硅衬底，氮化铝衬底或氮化镓衬底。在这种情况下，预定的晶面优选为C面。

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