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21. 发明授权

US06465334B1 Enhanced electroless deposition of dielectric precursor materials for use in in-laid gate MOS transistors 有权
标题翻译：用于嵌入栅极MOS晶体管的电介质前体材料的增强的无电沉积
公开(公告)号：US06465334B1
公开(公告)日：2002-10-15
申请号：US09679369
申请日：2000-10-05
申请人： Matthew S. Buynoski , Paul R. Besser , Paul L. King , Eric N. Paton , Qi Xiang
发明人： Matthew S. Buynoski , Paul R. Besser , Paul L. King , Eric N. Paton , Qi Xiang
IPC分类号： H01L214763
CPC分类号： H01L21/28194 , H01L21/288 , H01L21/31683 , H01L29/517 , H01L29/66545 , H01L29/66553 , H01L29/66583
摘要： High quality dielectric layers, e.g., high-k dielectric layers comprised of at least one refractory or lanthanum series transition metal oxide or silicate, for use as gate insulator layers in in-laid metal gate MOS transistors and CMOS devices, are fabricated by forming an ultra-thin catalytic metal layer, e.g., a monolayer thick layer of Pd or Pd, on a Si-based semiconductor substrate, electrolessly plating on the catalytic layer comprising at least one refractory or lanthanum series transition metal or metal-based dielectric precursor layer, such as of Zr and/or Hf, and then reacting the precursor layer with oxygen or with oxygen and the semiconductor substrate to form the at least one high-k metal oxide or silicate. The inventive methodology prevents, or at least substantially reduces, oxygen access to the substrate surface during at least the initial stage(s) of formation of the gate insulator layer, thereby minimizing deleterious formation of oxygen-induced surface states at the semiconductor substrate/gate insulator interface.
摘要翻译：通过形成高质量的电介质层，例如由至少一种难熔或镧系列过渡金属氧化物或硅酸盐构成的高k电介质层，用作在叠层金属栅极MOS晶体管和CMOS器件中用作栅极绝缘体层超薄催化金属层，例如在Si基半导体衬底上的单层厚的Pd或Pd层，在包含至少一种难熔或镧系过渡金属或金属基电介质前体层的催化剂层上无电镀，例如Zr和/或Hf，然后使前体层与氧或与氧和半导体衬底反应以形成至少一种高k金属氧化物或硅酸盐。本发明的方法在至少形成栅极绝缘体层的初始阶段期间防止或至少基本上减少氧接触到衬底表面，从而最小化半导体衬底/栅极处的氧诱导表面状态的有害形成绝缘子接口。

22. 发明授权

US06458679B1 Method of making silicide stop layer in a damascene semiconductor structure 有权
标题翻译：在大马士革半导体结构中制造硅化物阻挡层的方法
公开(公告)号：US06458679B1
公开(公告)日：2002-10-01
申请号：US09780454
申请日：2001-02-12
申请人： Eric N. Paton , Paul R. Besser , Matthew S. Buynoski , Qi Xiang , Paul L. King , John Clayton Foster
发明人： Eric N. Paton , Paul R. Besser , Matthew S. Buynoski , Qi Xiang , Paul L. King , John Clayton Foster
IPC分类号： H01L213205
CPC分类号： H01L29/66583 , H01L21/28052 , H01L29/4941
摘要： A damascene gate semiconductor structure that is formed utilizing a silicide stop layer. Initially, a gate opening is provided in an insulating layer on a substrate. A first dielectric layer is deposited in the gate opening over the substrate. A silicide stop layer is then deposited in the gate opening over the first silicon layer. A second silicon layer is then deposited in the gate opening over the silicide stop layer. A metal or alloy layer is then deposited over the insulating and the second silicon layer. The damascene semiconductor structure is then temperature treated to react the metal or alloy layer with the second silicon layer to form a silicide layer. Any unreated metal or alloy is then removed from the metal or alloy layer.
摘要翻译：利用硅化物停止层形成的镶嵌栅极半导体结构。首先，在基板上的绝缘层中设置栅极开口。第一介电层沉积在衬底上的栅极开口中。然后在第一硅层上的栅极开口中沉积硅化物阻挡层。然后在硅化物停止层上的栅极开口中沉积第二硅层。然后在绝缘层和第二硅层上沉积金属或合金层。然后对镶嵌半导体结构进行温度处理以使金属或合金层与第二硅层反应形成硅化物层。然后从金属或合金层中除去任何未反应的金属或合金。

23. 发明授权

US4399890A Independently mounted fall prevention apparatus 失效
标题翻译：独立安装的防坠落装置
公开(公告)号：US4399890A
公开(公告)日：1983-08-23
申请号：US265407
申请日：1981-05-20
申请人： Leroy R. Bartels , John H. Lawson , Paul L. King
发明人： Leroy R. Bartels , John H. Lawson , Paul L. King
IPC分类号： A62B35/04 , E06C7/18 , A62B1/20
CPC分类号： E06C7/186 , A62B35/005 , A62B35/0068 , A62B35/04
摘要： A flexible cable safety system for a fixed ladder is mounted adjacent to and independent of the ladder. This arrangement is useful for ladders which are not designed to withstand the loads imposed when a safety system arrests the fall of a workman.
摘要翻译：固定梯子的柔性电缆安全系统安装在梯子附近并独立于梯子。这种安排对于不能承受安全系统阻止工人跌倒时施加的载荷的梯子是有用的。

24. 发明授权

US06717236B1 Method of reducing electromigration by forming an electroplated copper-zinc interconnect and a semiconductor device thereby formed 有权
标题翻译：通过形成电镀铜 - 锌互连和由此形成的半导体器件来减少电迁移的方法
公开(公告)号：US06717236B1
公开(公告)日：2004-04-06
申请号：US10084563
申请日：2002-02-26
申请人： Sergey Lopatin , Alexander H. Nickel , Paul L. King
发明人： Sergey Lopatin , Alexander H. Nickel , Paul L. King
IPC分类号： H01L27082
CPC分类号： H01L21/2885 , C25D3/58 , C25D7/123 , C25D17/001 , H01L21/76877
摘要： A method of reducing electromigration in a dual-inlaid copper interconnect line (3) by filling a via (6) with a Cu-rich Cu—Zn alloy (30) electroplated on a Cu surface (200 from a stable chemical solution, and by controlling the Zn-doping thereof, which also improves interconnect reliability and corrosion resistance, and a semiconductor device thereby formed. The method involves using a reduced-oxygen Cu—Zn alloy as fill (30) for the via (6) in forming the dual-inlaid interconnect structure (35). The alloy fill (30) is formed by electroplating the Cu surface (20) in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants, thereby electroplating the fill (30) on the Cu surface (20); and annealing the electroplated Cu—Zn alloy fill (30); and planarizing the Cu—Zn alloy fill (30), thereby forming the dual-inlaid copper interconnect line (35).
摘要翻译：通过在铜表面（200来自稳定的化学溶液和由稳定的化学溶液以及电解质的方式）电镀Cu富Cu Cu-Zn合金（30）填充通孔（6）来减少双镶嵌铜互连线（3）中的电迁移的方法控制其Zn掺杂，这也提高了互连可靠性和耐腐蚀性，以及由此形成的半导体器件，该方法包括使用还原氧Cu-Zn合金作为通孔（6）的填充物（30），形成双重所述合金填充物（30）通过以包含Zn和Cu的盐的独特的化学溶液，它们的络合剂，pH调节剂和表面活性剂电镀Cu表面（20）而形成，由此电镀在Cu表面（20）上填充（30）;对电镀的Cu-Zn合金填料（30）进行退火;以及平坦化Cu-Zn合金填料（30），由此形成双嵌入铜互连线（35）。

25. 发明授权

US06469387B1 Semiconductor device formed by calcium doping a copper surface using a chemical solution 失效
标题翻译：使用化学溶液通过钙掺杂铜表面形成的半导体器件
公开(公告)号：US06469387B1
公开(公告)日：2002-10-22
申请号：US09728314
申请日：2000-11-30
申请人： Sergey Lopatin , Joffre F. Bernard , Paul L. King
发明人： Sergey Lopatin , Joffre F. Bernard , Paul L. King
IPC分类号： H01L2348
CPC分类号： H01L21/7685 , H01L21/288 , H01L21/76862 , H01L21/76864 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a semiconductor device having contaminant-reduced Ca-doped Cu surfaces formed on Cu interconnects by cost-effectively depositing a Cu—Ca—X surface and subsequently removing the contaminant layer contained therein; and a device thereby formed. In the Cu—Ca—X surface, where contaminant X=C, S, and O, removal of the contaminant from such surface is achieved by (a) immersing the Cu interconnect surface into an electroless plating solution comprising Cu salts, Ca salts, their complexing agents, a reducing agent, a pH adjuster, and at least one surfactant for facilitating Ca-doping of the Cu interconnect material; and (b) annealing of the Cu—Ca—X surface under vacuum onto the underlying Cu interconnect material to form a Cu—Ca film on Cu interconnect structure, thereby producing a uniform Cu—Ca film (i.e., Cu-rich with 0.2-5% Ca) on the Cu surface of an interconnect for maximizing Ca—Cu/Cu interconnect structure reliability, electromigration resistance, and corrosion prevention. The annealing step primarily removes O and secondarily removes C and S, especially when performed under vacuum, an inert gas, or a reducing ambient such as ammonia (NH3) plasma. Thus, the resultant device then comprises a distinctive contaminant-reduced Ca—Cu/Cu interconnect structure.
摘要翻译：通过成本有效地沉积Cu-Ca-X表面并随后除去其中包含的污染物层，制造在Cu互连上形成的具有污染减少的Ca掺杂的Cu表面的半导体器件的方法; 和由此形成的装置。在污染物X = C，S和O的Cu-Ca-X表面中，通过（a）将Cu互连表面浸入包含Cu盐，Ca盐，它们的络合剂，还原剂，pH调节剂和用于促进Cu互连材料的Ca掺杂的至少一种表面活性剂; （b）将Cu-Ca-X表面在真空下退火到下面的Cu互连材料上，以在Cu互连结构上形成Cu-Ca膜，从而产生均匀的Cu-Ca膜（即富含Cu- 5％Ca）在铜互连的Cu表面，以最大限度地提高Ca-Cu / Cu互连结构的可靠性，抗电迁移和防腐蚀。退火步骤主要去除O，并且二次除去C和S，特别是在真空，惰性气体或还原环境如氨（NH 3）等离子体下进行时）。因此，所得到的器件然后包括不同的污染物减少的Ca-Cu / Cu互连结构。

26. 发明授权

US06444580B1 Method of reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface and semiconductor device thereby formed 有权
标题翻译：由此形成的钙掺杂铜表面和半导体器件中的碳，硫和氧杂质的还原方法
公开(公告)号：US06444580B1
公开(公告)日：2002-09-03
申请号：US09728312
申请日：2000-11-30
申请人： Sergey Lopatin , Paul L. King , Joffre F. Bernard
发明人： Sergey Lopatin , Paul L. King , Joffre F. Bernard
IPC分类号： H01L2144
CPC分类号： H01L21/7685 , H01L21/288 , H01L21/76838 , H01L21/76862 , H01L21/76864 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a semiconductor device having contaminant-reduced calcium-copper (Ca—Cu) alloy surfaces formed on Cu interconnects by cost-effectively removing the contaminant layer and a device thereby formed. Contaminant removal from a Cu—Ca—X surface, where contaminant X=C, S, or O, is achieved by sputtering the Cu—Ca—X surface in an argon (Ar) atmosphere between the steps of (a) immersing the Cu interconnect surface into an electroless plating solution comprising Cu salts, Ca salts, their complexing agents, a reducing agent, a pH adjuster, and at least one surfactant for facilitating Ca-doping of the Cu interconnect material; and (b) annealing of the Ca—Cu alloy surface onto the underlying Cu interconnect material to form a Ca—Cu/Cu interconnect structure, whereby the sputtering step, under Ar, selectively and effectively removes contaminants from the Cu—Ca—X layer containing higher concentrations of C, S, or O, thereby minimizing the post-annealed contaminant level, and thereby producing a uniform Ca—Cu alloy surface (i.e., Cu-rich with 0.2-5% Ca) on the Cu interconnect material for maximizing Ca—Cu/Cu interconnect structure reliability, electromigration resistance, and corrosion prevention. The annealing step primarily removes O and secondarily removes C and S, especially when performed under vacuum, an inert gas, or a reducing ambient such as ammonia (NH3) plasma. Thus, the resultant device then comprises a distinctive contaminant-reduced Ca—Cu/Cu interconnect structure.
摘要翻译：通过成本有效地去除污染物层和由此形成的器件，制造在Cu互连上形成的具有污染物降低的钙 - 铜（Ca-Cu）合金表面的半导体器件的方法。污染物X = C，S或O的Cu-Ca-X表面的污染物去除是通过在氩（Ar）气氛中溅射Cu-Ca-X表面，在（a）浸渍Cu 将互连表面连接成包含Cu盐，Ca盐，它们的络合剂，还原剂，pH调节剂和至少一种用于促进Cu互连材料的Ca掺杂的表面活性剂的化学镀溶液; 和（b）将Ca-Cu合金表面退火到下面的Cu互连材料上以形成Ca-Cu / Cu互连结构，由此在Ar下的溅射步骤选择性且有效地从Cu-Ca-X层去除污染物含有较高浓度的C，S或O，从而使退火后的污染物水平最小化，从而在Cu互连材料上产生均匀的Ca-Cu合金表面（即，具有0.2-5％Ca的富含Cu的Cu），以使 Ca-Cu / Cu互连结构的可靠性，电迁移性和防腐蚀性。退火步骤主要去除O，并且二次除去C和S，特别是在真空，惰性气体或还原环境如氨（NH 3）等离子体下进行时）。因此，所得到的器件然后包括不同的污染物减少的Ca-Cu / Cu互连结构。

27. 发明授权

US06630741B1 Method of reducing electromigration by ordering zinc-doping in an electroplated copper-zinc interconnect and a semiconductor device thereby formed 有权
标题翻译：通过在电镀铜 - 锌互连和由此形成的半导体器件中排序锌掺杂来减少电迁移的方法
公开(公告)号：US06630741B1
公开(公告)日：2003-10-07
申请号：US10016645
申请日：2001-12-07
申请人： Sergey Lopatin , Paul L. King , Joffre F. Bernard
发明人： Sergey Lopatin , Paul L. King , Joffre F. Bernard
IPC分类号： H01L2352
CPC分类号： H01L21/76846 , H01L21/2885 , H01L21/76849 , H01L21/76858 , H01L21/76873 , H01L21/76877 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of reducing electromigration in a graded reduced-oxygen dual-inlaid copper interconnect line by filling a via with a graded Cu-rich Cu—Zn alloy fill electroplated on a Cu surface using a stable chemical solution, and by controlling and ordering the Zn-doping thereof, which also improves interconnect reliability and corrosion resistance, and a semiconductor device thereby formed. The method involves using a graded reduced-oxygen Cu—Zn alloy as fill for the via in forming the dual-inlaid interconnect structure. The graded alloy fill is formed by electroplating, while varying electroplating parameters, the Cu surface in a unique chemical solution containing salts of Zn and Cu, their complexing agents, a pH adjuster, and surfactants, thereby electroplating the graded fill on the Cu surface; and annealing the electroplated graded Cu—Zn alloy fill; and planarizing the Cu—Zn alloy fill, thereby forming the graded reduced-oxygen dual-inlaid copper interconnect line.
摘要翻译：通过使用稳定的化学溶液电镀在Cu表面上的分级富Cu Cu-Zn合金填充通孔，并且通过控制和排序Zn来减少分级的还原氧双嵌入铜互连线中的电迁移的方法并且还提高了互连可靠性和耐腐蚀性，并且由此形成了半导体器件。该方法包括在形成双镶嵌互连结构中使用渐变的还原氧Cu-Zn合金作为通孔的填充物。分级合金填充是通过电镀而形成的，而不同的电镀参数，Cu表面在独特的含有Zn和Cu盐的化学溶液，它们的络合剂，pH调节剂和表面活性剂中，从而将分级填料电镀在Cu表面上; 并对电镀分级的Cu-Zn合金填料进行退火; 并且对Cu-Zn合金填充物进行平坦化，从而形成分级的还原氧双嵌入铜互连线。

28. 发明授权

US06624074B1 Method of fabricating a semiconductor device by calcium doping a copper surface using a chemical solution 有权
标题翻译：使用化学溶液通过钙掺杂铜表面制造半导体器件的方法
公开(公告)号：US06624074B1
公开(公告)日：2003-09-23
申请号：US10218532
申请日：2002-08-13
申请人： Sergey Lopatin , Joffre F. Bernard , Paul L. King
发明人： Sergey Lopatin , Joffre F. Bernard , Paul L. King
IPC分类号： H01L2144
CPC分类号： H01L21/7685 , H01L21/288 , H01L21/76862 , H01L21/76864 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a semiconductor device having contaminant-reduced Ca-doped Cu surfaces formed on Cu interconnects by cost-effectively depositing a Cu—Ca—X surface and subsequently removing the contaminant layer contained therein; and a device thereby formed. In the Cu—Ca—X surface, where contaminant X═C, S, and O, removal of the contaminant from such surface is achieved by (a) immersing the Cu interconnect surface into an electroless plating solution comprising Cu salts, Ca salts, their complexing agents, a reducing agent, a pH adjuster, and at least one surfactant for facilitating Ca-doping of the Cu interconnect material; and (b) annealing of the Cu—Ca—X surface under vacuum onto the underlying Cu interconnect material to form a Cu—Ca film on Cu interconnect structure, thereby producing a uniform Cu—Ca film (i.e., Cu-rich with 0.2-5% Ca) on the Cu surface of an interconnect for maximizing Ca—Cu/Cu interconnect structure reliability, electromigration resistance, and corrosion prevention. The annealing step primarily removes O and secondarily removes C and S, especially when performed under vacuum, an inert gas, or a reducing ambient such as ammonia (NH3) plasma. Thus, the resultant device then comprises a distinctive contaminant-reduced Ca—Cu/Cu interconnect structure.
摘要翻译：通过成本有效地沉积Cu-Ca-X表面并随后除去其中包含的污染物层，制造在Cu互连上形成的具有污染减少的Ca掺杂的Cu表面的半导体器件的方法; 和由此形成的装置。在污染物X = C，S和O的Cu-Ca-X表面中，通过（a）将Cu互连表面浸入包含Cu盐，Ca盐，它们的络合剂，还原剂，pH调节剂和用于促进Cu互连材料的Ca掺杂的至少一种表面活性剂; （b）将Cu-Ca-X表面在真空下退火到下面的Cu互连材料上，以在Cu互连结构上形成Cu-Ca膜，从而产生均匀的Cu-Ca膜（即富含Cu- 5％Ca）在铜互连的Cu表面，以最大限度地提高Ca-Cu / Cu互连结构的可靠性，抗电迁移和防腐蚀。退火步骤主要去除O，并且二次除去C和S，特别是在真空，惰性气体或还原环境如氨（NH 3）等离子体下进行时）。因此，所得到的器件然后包括不同的污染物减少的Ca-Cu / Cu互连结构。

29. 发明授权

US06621165B1 Semiconductor device fabricated by reducing carbon, sulphur, and oxygen impurities in a calcium-doped copper surface 有权
标题翻译：通过在掺杂钙的铜表面中还原碳，硫和氧杂质制造的半导体器件
公开(公告)号：US06621165B1
公开(公告)日：2003-09-16
申请号：US10154871
申请日：2002-05-23
申请人： Sergey Lopatin , Paul L. King , Joffre F. Bernard
发明人： Sergey Lopatin , Paul L. King , Joffre F. Bernard
IPC分类号： H01L2348
CPC分类号： H01L21/7685 , H01L21/288 , H01L21/76838 , H01L21/76862 , H01L21/76864 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device having contaminant-reduced calcium-copper (Ca—Cu) alloy surfaces formed on Cu interconnects fabricated by cost-effectively removing the contaminant layer. Contaminant removal from a Cu—Ca—X surface, where contaminant X═C, S, or O, is achieved by sputtering the Cu—Ca—X surface in an argon (Ar) atmosphere between the steps of (a) immersing the Cu interconnect surface into an electroless plating solution comprising Cu salts, Ca salts, their complexing agents, a reducing agent, a pH adjuster, and at least one surfactant for facilitating Ca-doping of the Cu interconnect material; and (b) annealing of the Ca—Cu alloy surface onto the underlying Cu interconnect material to form a Ca—Cu/Cu interconnect structure, whereby the sputtering step, under Ar, selectively and effectively removes contaminants from the Cu—Ca—X layer containing higher concentrations of C, S, or O, thereby minimizing the post-annealed contaminant level, and thereby producing a uniform Ca—Cu alloy surface (i.e., Cu-rich with 0.2-5% Ca) on the Cu interconnect material for maximizing Ca—Cu/Cu interconnect structure reliability, electromigration resistance, and corrosion prevention. The annealing step primarily removes O and secondarily removes C and S, especially when performed under vacuum, an inert gas, or a reducing ambient such as ammonia (NH3) plasma. Thus, the resultant device then comprises a distinctive contaminant-reduced Ca—Cu/Cu interconnect structure.
摘要翻译：具有通过成本有效地去除污染物层而制造的Cu互连上形成污染物降低的钙 - 铜（Ca-Cu）合金表面的半导体器件。污染物X = C，S或O的Cu-Ca-X表面的污染物去除是通过在氩（Ar）气氛中溅射Cu-Ca-X表面，在（a）浸渍Cu 将互连表面连接成包含Cu盐，Ca盐，它们的络合剂，还原剂，pH调节剂和至少一种用于促进Cu互连材料的Ca掺杂的表面活性剂的化学镀溶液; 和（b）将Ca-Cu合金表面退火到下面的Cu互连材料上以形成Ca-Cu / Cu互连结构，由此在Ar下的溅射步骤选择性且有效地从Cu-Ca-X层去除污染物含有较高浓度的C，S或O，从而使退火后的污染物水平最小化，从而在Cu互连材料上产生均匀的Ca-Cu合金表面（即，具有0.2-5％Ca的富含Cu的Cu），以使 Ca-Cu / Cu互连结构的可靠性，电迁移性和防腐蚀性。退火步骤主要去除O，并且二次除去C和S，特别是在真空，惰性气体或还原环境如氨（NH 3）等离子体下进行时）。因此，所得到的器件然后包括不同的污染物减少的Ca-Cu / Cu互连结构。

30. 发明授权

US4181194A Safety clamp device and apparatus utilizing same 失效
标题翻译：安全钳装置及利用该装置的装置
公开(公告)号：US4181194A
公开(公告)日：1980-01-01
申请号：US914277
申请日：1978-06-09
申请人： James H. Bassett , Paul L. King
发明人： James H. Bassett , Paul L. King
IPC分类号： E04G3/32 , E04G3/10
CPC分类号： E04G3/32 , Y10T24/3949
摘要： An improved safety clamp device for use with movable platforms and the like includes a body member having a safety cable receiving cradle, a lever arm having a safety cable engaging portion, the lever arm being pivotally connected to the body member and pivotally connected to an elongate bar member, and a modified bellcrank. The modified bellcrank has a first arm pivotally connected to the body member, a second arm pivotally coupled to a hoist line, and its apex pivotally connected to the elongate bar member. When the elongate bar member is in a first position relative to the body member, the safety cable engaging portion confronts but does not engage the safety cable. When the elongate bar member is in a second position relative to the body member, the safety cable engaging portion engages the safety cable thereby wedging the safety cable between the cradle and the safety cable engaging portions. The modified bellcrank and the lever arm operate cooperatively to maintain the body member and the elongate bar member in parallel relationship to the safety cable.
摘要翻译：一种用于可移动平台等的改进的安全夹紧装置包括具有安全电缆接收支架的主体构件，具有安全缆线接合部分的杠杆臂，杠杆臂可枢转地连接到主体构件并枢转地连接到细长酒吧会员和修改后的曲拐。改进的曲拐具有枢转地连接到主体构件的第一臂，枢转地联接到提升线的第二臂，并且其顶点枢转地连接到细长杆构件。当细长杆构件相对于主体构件处于第一位置时，安全缆线接合部分面对但不接合安全缆线。当细长杆构件相对于主体构件处于第二位置时，安全缆线接合部分接合安全缆线，从而将安全缆线楔入托架和安全缆线接合部分之间。改进的曲拐和杠杆臂协同工作以使主体构件和细长杆构件保持与安全缆线平行的关系。

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