会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 21. 发明申请
    • Electron microscope
    • 电子显微镜
    • US20080024601A1
    • 2008-01-31
    • US11699062
    • 2007-01-29
    • Hidetoshi SatoTakumichi SutaniYutaka Hojo
    • Hidetoshi SatoTakumichi SutaniYutaka Hojo
    • H04N9/47
    • H01J37/28H01J2237/221H01J2237/2485H01J2237/2816H01J2237/2817
    • There is provided an electron microscope which is capable of making a significant contribution to accomplishment of efficiency in investigating causes for pattern abnormalities found out. The electron microscope including an I/O for capturing image data on a microscopic image acquired by another electron microscope, a computation processing unit for generating a display signal based on the image data on the microscopic image acquired by another electron microscope and captured via the I/O and image data on a microscopic image acquired by the electron microscope itself, in order that the microscopic image acquired by another electron microscope and the microscopic image acquired by the electron microscope itself are displayed at the same scale and under the same display condition, and a display unit for displaying both of the microscopic images based on the display signal from the computation processing unit.
    • 提供了一种电子显微镜,其能够对发现的图案异常的调查原因的效率的实现方面作出重大贡献。 电子显微镜包括用于在由另一电子显微镜获取的显微镜图像上捕获图像数据的I / O,计算处理单元,用于根据由另一电子显微镜获取的显微图像上的图像数据产生显示信号,并通过I / O和通过电子显微镜本身获取的显微镜图像上的图像数据,以便通过另一电子显微镜获得的显微图像和由电子显微镜本身获取的显微图像以相同的尺度显示在相同的显示条件下, 以及显示单元,用于基于来自计算处理单元的显示信号显示两个微观图像。
    • 25. 发明授权
    • Electron microscope for inspecting dimension and shape of a pattern formed on a wafer
    • 用于检查在晶片上形成的图案的尺寸和形状的电子显微镜
    • US08199191B2
    • 2012-06-12
    • US11699062
    • 2007-01-29
    • Hidetoshi SatoTakumichi SutaniYutaka Hojo
    • Hidetoshi SatoTakumichi SutaniYutaka Hojo
    • H04N7/18G02B21/00G06K9/00
    • H01J37/28H01J2237/221H01J2237/2485H01J2237/2816H01J2237/2817
    • There is provided an electron microscope which is capable of making a significant contribution to accomplishment of efficiency in investigating causes for pattern abnormalities found out. The electron microscope including an I/O for capturing image data on a microscopic image acquired by another electron microscope, a computation processing unit for generating a display signal based on the image data on the microscopic image acquired by another electron microscope and captured via the I/O and image data on a microscopic image acquired by the electron microscope itself, in order that the microscopic image acquired by another electron microscope and the microscopic image acquired by the electron microscope itself are displayed at the same scale and under the same display condition, and a display unit for displaying both of the microscopic images based on the display signal from the computation processing unit.
    • 提供了一种电子显微镜,其能够对发现的图案异常的调查原因的效率的实现方面作出重大贡献。 电子显微镜包括用于在由另一电子显微镜获取的显微镜图像上捕获图像数据的I / O,计算处理单元,用于根据由另一电子显微镜获取的显微图像上的图像数据产生显示信号,并通过I / O和通过电子显微镜本身获取的显微镜图像上的图像数据,以便通过另一电子显微镜获得的显微图像和由电子显微镜本身获取的显微图像以相同的尺度显示在相同的显示条件下, 以及显示单元,用于基于来自计算处理单元的显示信号显示两个微观图像。
    • 27. 发明授权
    • Pattern inspection apparatus and semiconductor inspection system
    • 图案检验仪器和半导体检测系统
    • US07978904B2
    • 2011-07-12
    • US11834218
    • 2007-08-06
    • Yasutaka ToyodaTakumichi SutaniRyoichi MatsuokaHidemitsu Naya
    • Yasutaka ToyodaTakumichi SutaniRyoichi MatsuokaHidemitsu Naya
    • G06K9/00G06K9/48
    • G06T7/0004G06T7/001
    • There is provided a pattern inspection apparatus that is capable of detecting a defect accurately and efficiently to inspect a pattern of a semiconductor device. The pattern inspection apparatus includes: a contour extraction means for extracting contour data of a pattern from a captured image of the semiconductor device; a non-linear part extraction means for extracting a non-linear part from the contour data; an angular part extraction means for extracting an angular part of a pattern from design data of the semiconductor device; and a defect detection section that compares a position of the non-linear part extracted by the non-linear part extraction section with a position of the angular part extracted by the angular part extraction section so as to detect a position of a defective part of a pattern.
    • 提供了能够精确有效地检测缺陷以检查半导体器件的图案的图案检查装置。 图案检查装置包括:轮廓提取装置,用于从半导体装置的拍摄图像中提取图案的轮廓数据; 非线性部分提取装置,用于从轮廓数据中提取非线性部分; 角部分提取装置,用于从半导体器件的设计数据提取图案的角部; 以及缺陷检测部,其将由非线性部分提取部提取的非线性部的位置与由角部提取部提取的角部的位置进行比较,以检测不均匀部分的位置 模式。
    • 29. 发明授权
    • Pattern measurement method and pattern measurement system
    • 图案测量方法和图案测量系统
    • US07800060B2
    • 2010-09-21
    • US12182810
    • 2008-07-30
    • Hidetoshi SatoRyoichi MatsuokaTakumichi Sutani
    • Hidetoshi SatoRyoichi MatsuokaTakumichi Sutani
    • G01N23/00G21K7/00
    • G01N23/2251G03F1/86
    • Easily and correctly measuring a dimension of a pattern of a photomask or of an OPC pattern of the photomask.A pattern measurement method of the present invention includes steps of obtaining both a standard pattern corresponding to a predetermined pattern and a measurement point specified in advance; setting a measurement area so that it includes two straight line segments on both sides of the measurement point among outlines of the standard pattern; and measuring a dimension between two contours of the scanned image of the predetermined pattern in the measurement area by superposing the measurement area on the scanned image of the predetermined pattern. The measurement area is set so as not to include portions near corner portions connected to two line segments.
    • 轻松正确地测量光掩模图案或光掩模的OPC图案的尺寸。 本发明的图案测量方法包括以下步骤:获得与预定图案相对应的标准图案和预先指定的测量点; 设置测量区域,使其在标准图案的轮廓中包括测量点两侧的两条直线段; 以及通过将测量区域叠加在预定图案的扫描图像上,来测量测量区域中预定图案的扫描图像的两个轮廓之间的尺寸。 测量区域被设置成不包括连接到两个线段的拐角部分附近的部分。
    • 30. 发明授权
    • System and method for detecting defects in a semiconductor during manufacturing thereof
    • 用于在其制造期间检测半导体中的缺陷的系统和方法
    • US07681159B2
    • 2010-03-16
    • US11812774
    • 2007-06-21
    • Ryoichi MatsuokaHidetoshi MorokumaTakumichi Sutani
    • Ryoichi MatsuokaHidetoshi MorokumaTakumichi Sutani
    • G06F17/50
    • G06F17/5081G01R31/303
    • A system and a method for detecting a defect, capable of extracting a defect occurring depending on finishing accuracy required for circuit operation are provided. The system includes a timing analyzer for extracting a critical path in which a high accuracy is required for a signal transmission operation as compared with other portions based on circuit design data, a critical path extractor for comparing the circuit design data with layout design data on a pattern and for extracting graphical data including the critical path extracted by the timing analyzer, an inspection recipe creator for deciding a portion to be inspected, based on coordinate information on the graphical data including the critical path extracted by the critical path extractor, and an SEM defect review apparatus for acquiring an image of the decided portion to be inspected on a wafer according to an inspection recipe created by the inspection recipe creator.
    • 提供一种用于检测缺陷的系统和方法,其能够提取根据电路操作所需的精加工精度而发生的缺陷。 该系统包括用于提取与其他部分相比基于电路设计数据而与信号传输操作相比需要高精度的关键路径的定时分析器,用于将电路设计数据与布局设计数据进行比较的关键路径提取器 基于关于包括由关键路径提取器提取的关键路径的图形数据的坐标信息,以及扫描电子显微镜(SEM)来提取包括由定时分析器提取的关键路径的图形数据,用于决定待检查部分的检查配方生成器 缺陷检查装置,用于根据由检查配方创建者创建的检查配方在晶片上获取所确定的待检查部分的图像。