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21. 发明申请

US20130164944A1 Methods Of Forming Openings And Methods Of Patterning A Material 有权
标题翻译：形成开口的方法和图案化材料的方法
公开(公告)号：US20130164944A1
公开(公告)日：2013-06-27
申请号：US13769473
申请日：2013-02-18
申请人： Micron Technology, Inc.
发明人： Vishal Sipani , Baosuo Zhou , Ming-Chuan Yang
IPC分类号： H01L21/02
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338 , H01L21/76816 , H01L23/5226 , H01L23/528 , H01L2924/0002 , H01L2924/00
摘要： Some embodiments include methods of forming openings. For instance, a construction may have a material over a plurality of electrically conductive lines. A plurality of annular features may be formed over the material, with the annular features crossing the lines. A patterned mask may be formed over the annular features, with the patterned mask leaving segments of the annular features exposed through a window in the patterned mask. The exposed segments of the annular features may define a plurality of openings, and such openings may be transferred into the material to form openings extending to the electrically conductive lines.
摘要翻译：一些实施例包括形成开口的方法。例如，结构可以具有多条导电线上的材料。可以在材料上方形成多个环形特征，其中环形特征与线交叉。图案化的掩模可以形成在环形特征上，其中图案化掩模留下通过图案化掩模中的窗口暴露的环形特征的段。环形特征的暴露部分可以限定多个开口，并且这样的开口可以被转移到材料中以形成延伸到导电线的开口。

22. 发明申请

US20180254214A1 INTEGRATED CIRCUITS HAVING PARALLEL CONDUCTORS AND THEIR FORMATION 审中-公开
公开(公告)号：US20180254214A1
公开(公告)日：2018-09-06
申请号：US15973784
申请日：2018-05-08
申请人： MICRON TECHNOLOGY, INC.
发明人： Tyler G. Hansen , Ming-Chuan Yang , Vishal Sipani
IPC分类号： H01L21/768 , H01L21/033
摘要： Integrated circuits, as well as methods of their formation, include a first conductive structure at a first level of the integrated circuit, a second conductive structure at a second level of the integrated circuit, a first conductor at a third level of the integrated circuit between the first level and the second level, a second conductor at the third level and parallel to the first conductor, and a third conductor at the third level and parallel to the first conductor and to the second conductor. The first conductive structure is in physical and electrical contact with the first conductor and the second conductor. The second conductive structure is in physical and electrical contact with the second conductor and the third conductor.

23. 发明授权

US09780029B2 Semiconductor constructions having conductive lines which merge with one another 有权
公开(公告)号：US09780029B2
公开(公告)日：2017-10-03
申请号：US14699664
申请日：2015-04-29
申请人： Micron Technology, Inc.
发明人： Vishal Sipani , Kyle Armstrong , Michael D. Hyatt , Michael Dean Van Patten , David A. Kewley , Ming-Chuan Yang
IPC分类号： H01L21/768 , H01L23/525 , H01L23/532 , H01L23/528 , H01L21/033
CPC分类号： H01L23/525 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/32139 , H01L21/76816 , H01L23/528 , H01L23/53209 , H01L23/53257 , H01L23/53271 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.

24. 发明授权

US09741580B2 Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrate 有权
公开(公告)号：US09741580B2
公开(公告)日：2017-08-22
申请号：US14674476
申请日：2015-03-31
申请人： Micron Technology, Inc.
发明人： Vishal Sipani , Anton J. deVilliers , William R. Brown , Shane J. Trapp , Ranjan Khurana , Kevin R. Shea
IPC分类号： H01L29/76 , H01L21/308 , H01L21/027 , H01L21/033 , H01L21/311 , H01L21/22 , H01L21/266 , H01L21/32 , H01L21/768 , H01L21/02
CPC分类号： H01L21/308 , H01L21/02642 , H01L21/0273 , H01L21/0337 , H01L21/22 , H01L21/266 , H01L21/31138 , H01L21/31144 , H01L21/32 , H01L21/76816
摘要： A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.

25. 发明授权

US09358753B2 Substrates and methods of forming a pattern on a substrate 有权
公开(公告)号：US09358753B2
公开(公告)日：2016-06-07
申请号：US14788890
申请日：2015-07-01
申请人： Micron Technology, Inc.
发明人： Vishal Sipani , David A. Kewley , Kyle Armstrong , Michael Dean Van Patten , Michael D. Hyatt
IPC分类号： B32B3/30 , G03F7/00 , G03F7/20 , G03F7/40 , H01L21/311 , H01L21/033
CPC分类号： B32B3/30 , G03F7/0035 , G03F7/2002 , G03F7/40 , H01L21/0337 , H01L21/31144 , Y10T428/24521 , Y10T428/24612
摘要： Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.

26. 发明授权

US09330914B2 Methods of forming line patterns in substrates 有权
标题翻译：在基板上形成线图案的方法
公开(公告)号：US09330914B2
公开(公告)日：2016-05-03
申请号：US14049135
申请日：2013-10-08
申请人： Micron Technology, Inc.
发明人： Scott L. Light , Vishal Sipani , Michael D. Hyatt
IPC分类号： H01L21/311 , H01L21/033
CPC分类号： H01L21/0337
摘要： A method including forming a line pattern in a substrate includes using a plurality of longitudinally spaced projecting features formed along respective guide lines as a template in forming a plurality of directed self-assembled (DSA) lines that individually comprise at least one of (a): the spaced projecting features and DSA material longitudinally there-between, and (b): are laterally between and laterally spaced from immediately adjacent of the guide lines. Substrate material elevationally inward of and laterally between the DSA lines may be processed using the DSA lines as a mask.
摘要翻译：包括在衬底中形成线图案的方法包括在形成多个定向自组装（DSA）线时使用沿着相应引导线形成的多个纵向间隔开的突出特征作为模板，所述定向自组装（DSA）线分别包括以下中的至少一个：（a）：在其间纵向延伸的间隔开的突出特征和DSA材料，和（b）之间：在紧邻引导线之间横向间隔开并且横向间隔开。可以使用DSA线作为掩模来处理DSA线之间和横向上的基底材料。

27. 发明申请

US20160042995A1 INTERCONNECT STRUCTURES FOR INTEGRATED CIRCUITS AND THEIR FORMATION 有权
公开(公告)号：US20160042995A1
公开(公告)日：2016-02-11
申请号：US14887359
申请日：2015-10-20
申请人： MICRON TECHNOLOGY, INC.
发明人： Tyler G. Hansen , Ming-Chuan Yang , Vishal Sipani
IPC分类号： H01L21/768 , H01L21/311 , H01L23/535
CPC分类号： H01L21/76895 , H01L21/0337 , H01L21/31144 , H01L21/76802 , H01L21/76816 , H01L21/76838 , H01L21/76877 , H01L23/522 , H01L23/5226 , H01L23/5329 , H01L23/535 , H01L2924/0002 , H01L2924/00
摘要： An embodiment of an interconnect structure for an integrated circuit may include a first conductor coupled to circuitry, a second conductor, a dielectric between the first and second conductors, and a conductive underpass under and coupled to the first and second conductors and passing under the dielectric or a conductive overpass over and coupled to the first and second conductors and passing over the dielectric. The second conductor would be floating but for its coupling to the conductive underpass or the conductive overpass. In other embodiments, another dielectric might be included that would electrically isolate the second conductor but for its coupling to the conductive underpass or the conductive overpass.

28. 发明申请

US20150321447A1 Substrates And Methods Of Forming A Pattern On A Substrate 有权
标题翻译：基板和基板上形成图案的方法
公开(公告)号：US20150321447A1
公开(公告)日：2015-11-12
申请号：US14788890
申请日：2015-07-01
申请人： Micron Technology, Inc.
发明人： Vishal Sipani , David A. Kewley , Kyle Armstrong , Michael Dean Van Patten , Michael D. Hyatt
IPC分类号： B32B3/30
CPC分类号： B32B3/30 , G03F7/0035 , G03F7/2002 , G03F7/40 , H01L21/0337 , H01L21/31144 , Y10T428/24521 , Y10T428/24612
摘要： Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.
摘要翻译：衬底和在衬底上形成图案的方法。图案包括重复图案区域和与重复图案区域相邻的图案中断区域。在衬底上形成掩模，其中掩模包括重复图案区域和图案中断区域，并且使用两个单独的掩蔽步骤形成掩模。该掩模用于将图案形成到其上接收掩模的下面的基底材料中。还公开了包括掩模的基板。

29. 发明申请

US20150235938A1 Patterning Methods and Methods of Forming Electrically Conductive Lines 有权
标题翻译：形成导电线的图案化方法和方法
公开(公告)号：US20150235938A1
公开(公告)日：2015-08-20
申请号：US14699664
申请日：2015-04-29
申请人： Micron Technology, Inc.
发明人： Vishal Sipani , Kyle Armstrong , Michael D. Hyatt , Michael Dean Van Patten , David A. Kewley , Ming-Chuan Yang
IPC分类号： H01L23/525 , H01L23/532
CPC分类号： H01L23/525 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/32139 , H01L21/76816 , H01L23/528 , H01L23/53209 , H01L23/53257 , H01L23/53271 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.
摘要翻译：一些实施例包括形成导电线的方法。光致抗蚀剂特征形成在衬底上，其中至少一个光致抗蚀剂特征具有变窄的区域。修整光致抗蚀剂特征，其穿过狭窄区域以形成间隙。隔板沿光致抗蚀剂特征的侧壁形成。间隙中的两个垫片合并在一起。去除光致抗蚀剂特征以留下包括间隔物的图案。该图案延伸到衬底中以在衬底内形成多个凹槽。导电材料形成在凹槽内以形成导电线。一些实施例包括在半导体衬底上具有多条线的半导体结构。两条线彼此相邻并且基本上彼此平行，除了在所述两条线彼此合并的区域中。

30. 发明申请

US20150206760A1 Substrate Mask Patterns, Methods Of Forming A Structure On A Substrate, Methods Of Forming A Square Lattice Pattern From An Oblique Lattice Pattern, And Methods Of Forming A Pattern On A Substrate 有权
标题翻译：底物掩模图案，在基体上形成结构的方法，从斜面图案形成方形格子图案的方法以及在基板上形成图案的方法
公开(公告)号：US20150206760A1
公开(公告)日：2015-07-23
申请号：US14674476
申请日：2015-03-31
申请人： Micron Technology, Inc.
发明人： Vishal Sipani , Anton J. deVilliers , William R. Brown , Shane J. Trapp , Ranjan Khurana , Kevin R. Shea
IPC分类号： H01L21/308 , H01L21/02
CPC分类号： H01L21/308 , H01L21/02642 , H01L21/0273 , H01L21/0337 , H01L21/22 , H01L21/266 , H01L21/31138 , H01L21/31144 , H01L21/32 , H01L21/76816
摘要： A method of forming a pattern on a substrate comprises forming spaced, upwardly-open, cylinder-like structures projecting longitudinally outward of a base. Sidewall lining is formed over inner and over outer sidewalls of the cylinder-like structures, and that forms interstitial spaces laterally outward of the cylinder-like structures. The interstitial spaces are individually surrounded by longitudinally-contacting sidewall linings that are over outer sidewalls of four of the cylinder-like structures. Other embodiments are disclosed, including structure independent of method.
摘要翻译：在衬底上形成图案的方法包括形成间隔开的向上开口的圆柱状结构，其纵向向外突出。侧壁衬里形成在圆柱状结构的内侧和上侧外侧上，并且在圆柱状结构的横向外侧形成间隙空间。间隙空间被四个圆柱状结构的外侧壁上的纵向接触的侧壁衬里分开包围。公开了其他实施例，包括与方法无关的结构。

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