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21. 发明申请

US20070069225A1 III-V light emitting device 审中-公开
标题翻译： III-V发光装置
公开(公告)号：US20070069225A1
公开(公告)日：2007-03-29
申请号：US11237215
申请日：2005-09-27
申请人： Michael Krames , Nathan Gardner , John Epler
发明人： Michael Krames , Nathan Gardner , John Epler
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： H01L21/2654 , H01L21/76254 , H01L33/0075 , H01L33/0079 , H01S5/32341 , H01S2304/12
摘要： A semiconductor structure includes an n-type region, a p-type region, and a III-nitride light emitting layer disposed between the n-type region and the p-type region. The III-nitride light emitting layer has a lattice constant greater than 3.19 Å. Such a semiconductor structure may be grown on a substrate including a host and a seed layer bonded to the host. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
摘要翻译：半导体结构包括设置在n型区域和p型区域之间的n型区域，p型区域和III族氮化物发光层。 III族氮化物发光层的晶格常数大于3.19埃。这样的半导体结构可以在包含与主体结合的主体和种子层的基板上生长。在一些实施方案中，结合层将主体结合到种子层。种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除，两层。在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。

22. 发明申请

US20060284187A1 Grown photonic crystals in semiconductor light emitting devices 有权
公开(公告)号：US20060284187A1
公开(公告)日：2006-12-21
申请号：US11156105
申请日：2005-06-17
申请人： Jonathan Wierer , Michael Krames , Nathan Gardner
发明人： Jonathan Wierer , Michael Krames , Nathan Gardner
IPC分类号： H01L27/15
CPC分类号： C30B29/60 , B82Y20/00 , G02B6/1225 , H01L33/08 , H01L33/18 , H01L33/24 , H01L2933/0083 , H01S5/105 , H01S5/34333
摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.

23. 发明申请

US20060202215A1 Polarization-reversed III-nitride light emitting device 有权
标题翻译：极化反转的III族氮化物发光器件
公开(公告)号：US20060202215A1
公开(公告)日：2006-09-14
申请号：US11080022
申请日：2005-03-14
申请人： Jonathan Wierer , M. Craford , John Epler , Michael Krames
发明人： Jonathan Wierer , M. Craford , John Epler , Michael Krames
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/0079 , H01L33/16 , H01S5/0213 , H01S5/0215 , H01S5/0217 , H01S5/02208 , H01S5/3202 , H01S5/32341 , H01S2304/00
摘要： A device structure includes a III-nitride wurtzite semiconductor light emitting region disposed between a p-type region and an n-type region. A bonded interface is disposed between two surfaces, one of the surfaces being a surface of the device structure. The bonded interface facilitates an orientation of the wurtzite c-axis in the light emitting region that confines carriers in the light emitting region, potentially increasing efficiency at high current density.
摘要翻译：器件结构包括设置在p型区域和n型区域之间的III族氮化物纤锌矿半导体发光区域。键合界面设置在两个表面之间，其中一个表面是器件结构的表面。结合界面有利于限制发光区域中的载流子的发光区域中的纤锌矿c轴的取向，在高电流密度下潜在地提高效率。

24. 发明申请

US20060014310A1 Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal 审中-公开
标题翻译：通过生长衬底去除制造的谐振腔III族氮化物发光器件
公开(公告)号：US20060014310A1
公开(公告)日：2006-01-19
申请号：US11227416
申请日：2005-09-14
申请人： John Epler , Michael Krames , Jonathan Wierer
发明人： John Epler , Michael Krames , Jonathan Wierer
IPC分类号： H01L21/00
CPC分类号： H01L33/465 , H01L33/007 , H01L33/0079 , H01L33/22
摘要： A semiconductor light emitting device includes an n-type region, a p-type region, and light emitting region disposed between the n- and p-type regions. The n-type, p-type, and light emitting regions form a cavity having a top surface and a bottom surface. Both the top surface and the bottom surface of the cavity may have a rough surface. For example, the surface may have a plurality of peaks separated by a plurality of valleys. In some embodiments, the thickness of the cavity is kept constant by incorporating an etch-stop layer into the device, then thinning the layers of the device by a process that terminates on the etch-stop layer.
摘要翻译：半导体发光器件包括n型区域，p型区域和设置在n型区域和p型区域之间的发光区域。 n型，p型和发光区形成具有顶表面和底表面的空腔。空腔的顶表面和底表面都可以具有粗糙的表面。例如，表面可以具有由多个谷分隔的多个峰。在一些实施例中，通过将蚀刻停止层并入该器件中，使空腔的厚度保持恒定，然后通过终止于蚀刻停止层上的工艺使器件的层变薄。

25. 发明授权

US08471280B2 Silicone based reflective underfill and thermal coupler 有权
标题翻译：硅基反射底部填充和热耦合器
公开(公告)号：US08471280B2
公开(公告)日：2013-06-25
申请号：US12613924
申请日：2009-11-06
申请人： Rafael I. Aldaz , Grigoriy Basin , Paul S. Martin , Michael Krames
发明人： Rafael I. Aldaz , Grigoriy Basin , Paul S. Martin , Michael Krames
IPC分类号： H01L23/29
CPC分类号： H01L33/62 , H01L33/0079 , H01L33/382 , H01L33/60 , H01L33/641 , H01L33/642 , H01L33/647 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： In one embodiment, a flip chip LED is formed with a high density of gold posts extending from a bottom surface of its n-layer and p-layer. The gold posts are bonded to submount electrodes. An underfill material is then molded to fill the voids between the bottom of the LED and the submount. The underfill comprises a silicone molding compound base and about 70-80%, by weight, alumina (or other suitable material). Alumina has a thermal conductance that is about 25 times better than that of the typical silicone underfill, which is mostly silica. The alumina is a white powder. The underfill may also contain about 5-10%, by weight, TiO2 to increase the reflectivity. LED light is reflected upward by the reflective underfill, and the underfill efficiently conducts heat to the submount. The underfill also randomizes the light scattering, improving light extraction. The distributed gold posts and underfill support the LED layers during a growth substrate lift-off process.
摘要翻译：在一个实施例中，倒装芯片LED形成有从其n层和p层的底表面延伸的高密度的金柱。金柱结合到底座电极。然后将底部填充材料模制以填充LED底部和底座之间的空隙。底部填充物包含硅氧烷模塑料基料和约70-80重量％的氧化铝（或其它合适的材料）。氧化铝的导热系数比典型的硅胶底部填充物的热导率高出约25倍，这主要是二氧化硅。氧化铝是白色粉末。底部填充剂还可以含有约5-10重量％的TiO 2以增加反射率。 LED灯由反射底层填充物向上反射，底部填充物有效地将热量传导到底座。底部填充物也随机化光散射，改善光提取。分布式金柱和底层填料在生长衬底剥离过程中支持LED层。

26. 发明申请

US20080070334A1 LED Including Photonic Crystal Structure 有权
标题翻译：包括光子晶体结构的LED
公开(公告)号：US20080070334A1
公开(公告)日：2008-03-20
申请号：US11868854
申请日：2007-10-08
申请人： Michael Krames , Mihail Sigalas , Jonathan Wierer
发明人： Michael Krames , Mihail Sigalas , Jonathan Wierer
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/08 , H01L2224/48091 , H01L2933/0083 , Y10S438/943 , H01L2924/00014
摘要： A photonic crystal light emitting diode (“PXLED”) is provided. The PXLED includes a periodic structure, such as a lattice of holes, formed in the semiconductor layers of an LED. The parameters of the periodic structure are such that the energy of the photons, emitted by the PXLED, lies close to a band edge of the band structure of the periodic structure. Metal electrode layers have a strong influence on the efficiency of the PXLEDs. Also, PXLEDs formed from GaN have a low surface recombination velocity and hence a high efficiency. The PXLEDs are formed with novel fabrication techniques, such as the epitaxial lateral overgrowth technique over a patterned masking layer, yielding semiconductor layers with low defect density. Inverting the PXLED to expose the pattern of the masking layer or using the Talbot effect to create an aligned second patterned masking layer allows the formation of PXLEDs with low defect density.
摘要翻译：提供了一种光子晶体发光二极管（“PXLED”）。 PXLED包括在LED的半导体层中形成的诸如孔格的周期性结构。周期性结构的参数使得由PXLED发射的光子的能量靠近周期性结构的带结构的带边。金属电极层对PXLED的效率有很大的影响。此外，由GaN形成的PXLED具有低表面复合速度，因此具有高效率。 PXLED由新颖的制造技术形成，例如在图案化掩模层上的外延横向过度生长技术，产生具有低缺陷密度的半导体层。将PXLED反转以露出掩模层的图案或使用Talbot效应创建对准的第二图案化掩模层允许形成具有低缺陷密度的PXLED。

27. 发明申请

US20060220031A1 A1lnGaP LED having reduced temperature dependence 有权
标题翻译： AlInGaP LED具有降低的温度依赖性
公开(公告)号：US20060220031A1
公开(公告)日：2006-10-05
申请号：US11100080
申请日：2005-04-05
申请人： Michael Krames , Nathan Gardner , Frank Steranka
发明人： Michael Krames , Nathan Gardner , Frank Steranka
IPC分类号： H01L33/00
CPC分类号： H01L33/30 , H01L2224/13 , H01L2924/00011 , H01L2924/00014 , H01L2224/0401
摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.
摘要翻译：为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。

28. 发明申请

US20060151794A1 Photonic crystal light emitting device 有权
标题翻译：光子晶体发光装置
公开(公告)号：US20060151794A1
公开(公告)日：2006-07-13
申请号：US11373639
申请日：2006-03-09
申请人： Jonathan Wierer , Michael Krames , Mihail Sigalas
发明人： Jonathan Wierer , Michael Krames , Mihail Sigalas
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , B82Y20/00 , G02B6/1225 , H01L33/08 , H01L2933/0083
摘要： A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.
摘要翻译：在III族氮化物发光器件的n型层中形成光子晶体结构。在一些实施例中，在隧道结上形成光子晶体n型层。该器件包括第一导电类型的第一层，第二导电类型的第一层和将第一导电类型的第一层与第一导电类型的第一层分开的有源区。隧道结包括第一导电类型的第二层和第二导电类型的第二层，并且将第一导电类型的第一层与第一导电类型的第三层分离。在第一导电类型的第三层中形成光子晶体结构。

29. 发明申请

US20060105482A1 Array of light emitting devices to produce a white light source 审中-公开
标题翻译：用于产生白光源的发光器件阵列
公开(公告)号：US20060105482A1
公开(公告)日：2006-05-18
申请号：US11297287
申请日：2005-12-07
申请人： Robertus Alferink , Michael Krames
发明人： Robertus Alferink , Michael Krames
IPC分类号： H01L21/00
CPC分类号： H05B33/0857 , H01L25/0753 , H01L33/58 , H01L2924/0002 , H01L2924/00
摘要： A device is provided with an array of a plurality of phosphor converted light emitting devices (LEDs) that produce broad spectrum light. The phosphor converted LEDs may produce light with different correlated color temperature (CCT) and are covered with an optical element that assists in mixing the light from the LEDs to produce a desired correlated color temperature. The phosphor converted LEDs may also be combined in an array with color LEDs. The color LEDs may be controlled to vary their brightness such that light with an approximately continuous broad spectrum is produced. By controlling the brightness of the color LEDs, light can be produced with a fixed brightness over a large range of white points with a high color rendering quality.
摘要翻译：设备具有产生广谱光的多个磷光体转换发光器件（LED）的阵列。磷光体转换的LED可以产生具有不同相关色温（CCT）的光，并且被有助于混合来自LED的光以产生期望的相关色温的光学元件覆盖。磷光体转换的LED也可以与阵列中的彩色LED组合。可以控制彩色LED以改变其亮度，使得产生具有近似连续的广谱的光。通过控制彩色LED的亮度，可以在具有高显色质量的大范围白点上以固定的亮度产生光。

30. 发明申请

US20060105478A1 Bonding an optical element to a light emitting device 有权
标题翻译：将光学元件结合到发光器件
公开(公告)号：US20060105478A1
公开(公告)日：2006-05-18
申请号：US10987241
申请日：2004-11-12
申请人： Michael Camras , William Imler , Franklin Wall , Frank Steranka , Michael Krames , Helena Ticha , Ladislav Tichy
发明人： Michael Camras , William Imler , Franklin Wall , Frank Steranka , Michael Krames , Helena Ticha , Ladislav Tichy
IPC分类号： H01L21/00
CPC分类号： H05B33/0857 , H01L25/0753 , H01L33/58 , H01L2924/0002 , H01L2924/00
摘要： A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.
摘要翻译：设备具有至少一个发光器件（LED）裸片，该发光器件（LED）裸片安装在具有随后热粘合到LED管芯上的光学元件的基座上。 LED管芯通过接触凸块电连接到副安装座，接触凸块具有比用于将光学元件热粘合到LED管芯的温度高的熔点。在一个实现中，单个光学元件被结合到安装到基座上的多个LED芯片，并且基座和光学元件具有大致相同的热膨胀系数。或者，可以使用多个光学元件。光学元件或LED管芯可以用波长转换材料的涂层覆盖。在一个实施方案中，测试该器件以确定产生的波长，并且添加波长转换材料的附加层，直到产生所需的波长。

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