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    • 26. 发明授权
    • 3D CCD-style imaging sensor with rolling readout
    • 具有滚动读数的3D CCD式成像传感器
    • US09076709B2
    • 2015-07-07
    • US12774451
    • 2010-05-05
    • Jonas FelberMichael LehmannBernhard Buettgen
    • Jonas FelberMichael LehmannBernhard Buettgen
    • H04N3/14H04N5/335H01L27/148H01L29/768
    • H01L27/14812H01L27/14825H01L27/14831H01L29/76841
    • The presented readout structure provides charge transport based readout of a photosensitive device with a minimum number of transport gates. The structure uses the given charge storage buckets of the photosensitive device, separated by a minimum sized barrier-gate, to transport the charge out of the pixel field. This new readout schema allows for a fast readout speed based on a 2 phase transport chain and increases the pixel's optical fill factor by significantly reducing the transport gate size compared to state-of-the-art pixels using a 3 or 4 phase CCD readout chain. This readout structure can be exploited for standard photo-detecting elements such as e.g. pinned photo-diodes or any enhanced pixel structure that has additional intelligence incorporated as well. Typical applications are 2D- or 3D-imaging. The process used for manufacturing a sensor with such a readout scheme requires preferably charge transport mechanisms like charge-coupled gate devices as well as the possibility of integrating circuitries of high density. The exploitation of such a combination of process-related features results in a new sensor readout technique that allows for optimizing the pixel's dynamic range and optical fill factor.
    • 所呈现的读出结构提供了具有最少数量的传输门的光敏器件的基于电荷传输的读出。 该结构使用由最小尺寸的阻挡栅极隔开的感光装置的给定电荷存储桶,以将电荷输送出像素场。 这种新的读出模式允许基于2相传输链的快速读出速度,并且通过使用3或4相CCD读出链与现有技术像素相比显着降低传输门尺寸来增加像素的光学填充因子 。 该读出结构可以用于标准光电检测元件,例如, 固定光电二极管或具有额外智能的任何增强像素结构。 典型应用是2D或3D成像。 用于制造具有这种读出方案的传感器的方法优选地需要电荷传输机制,如电荷耦合栅极器件,以及集成高密度电路的可能性。 利用这种过程相关特征的组合导致新的传感器读出技术,其允许优化像素的动态范围和光学填充因子。
    • 28. 发明授权
    • On-chip time-based digital conversion of pixel outputs
    • 片上基于时间的数字转换像素输出
    • US07889257B2
    • 2011-02-15
    • US12175091
    • 2008-07-17
    • Thierry OggierMichael LehmannBernhard Buettgen
    • Thierry OggierMichael LehmannBernhard Buettgen
    • H04N3/14H04N5/335H01L27/00
    • G01S17/89
    • An integrated sensor chip comprises at least one pixel. The at least one pixel comprises: one or several integration regions for receiving and storing photogenerated charges; a modulation region that moves the photogenerated charges to be stored in the at least two integration regions; and sense nodes, in which each of the sense nodes is associated with one of the integration regions, into which the photogenerated charges are moved from the integration regions during a readout stage. The chip comprises: at least one function generator for generating a time-varying function that is applied to the integration regions during the readout cycle to move the photogenerated changes to the sense nodes; a counter generates a count during the generation of the time-varying function; and registers, in which each of the registers is associated with one of the sense nodes during read out, for storing digital values; wherein the registers store the count in response to the associated sense node receiving photogenerated charges from the associated integration regions.
    • 集成传感器芯片包括至少一个像素。 所述至少一个像素包括:用于接收和存储光生电荷的一个或几个积分区域; 调制区域,其移动要存储在所述至少两个积分区域中的光生电荷; 以及感测节点,其中每个感测节点与所述积分区域之一相关联,所述积分区域在读出阶段期间从所述积分区域移动所述光生电荷。 该芯片包括:至少一个功能发生器,用于产生在读出周期期间应用于积分区域的时变功能,以将光生变化移动到感测节点; 在产生时变功能期间,计数器产生计数; 和寄存器,其中每个寄存器在读出期间与感测节点之一相关联,用于存储数字值; 其中所述寄存器响应于所述相关联的感测节点从相关联的积分区域接收光生电荷而存储所述计数。