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21. 发明授权

US06864627B2 Image display device and light emission device 有权
标题翻译：图像显示装置和发光装置
公开(公告)号：US06864627B2
公开(公告)日：2005-03-08
申请号：US10436157
申请日：2003-05-13
申请人： Satoshi Komoto , Masayuki Ishikawa , Tadashi Umeji , Kuniaki Konno , Koichi Nitta , Haruhiko Okazaki
发明人： Satoshi Komoto , Masayuki Ishikawa , Tadashi Umeji , Kuniaki Konno , Koichi Nitta , Haruhiko Okazaki
IPC分类号： G09F9/30 , G02F1/13357 , G09F9/00 , G09F9/35 , H01L25/075 , H01L33/32 , H01L33/50 , H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62 , H01J1/62 , H01L33/00
CPC分类号： H01L33/505 , G02B6/0023 , G02B6/0025 , G02B6/003 , G02B6/0035 , G02B6/0046 , G02B6/0051 , G02B6/0055 , G02B6/0068 , G02B6/0073 , G02F1/1334 , G02F1/133603 , G02F1/133605 , G02F1/133617 , G02F1/13725 , G02F2001/133613 , G02F2001/133614 , G02F2203/34 , H01L25/0753 , H01L25/0756 , H01L33/50 , H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49107 , H01L2224/49113 , H01L2224/8592 , H01L2924/181 , H01L2924/3025 , H04N9/315 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An image display device including a light emission section which emits light to an intensity adjusting section and a wavelength conversion section which change the intensity and wavelength of the emitted light. Phosphors and phosphor like materials are employed in wavelength conversion and a liquid crystal is employed for the light adjustment. The light emission device may include plural semiconductor light emitting elements having a different wavelength ranges such as diodes stacked in a compact and predetermined order such that wavelengths of light from each diode are emitted from the light emitting elements.
摘要翻译：一种图像显示装置，包括向强度调节部发射光的发光部和改变发光的强度和波长的波长转换部。荧光体和荧光体类材料用于波长转换，并且液晶被用于光调节。发光装置可以包括具有不同波长范围的多个半导体发光元件，例如以紧凑且预定的顺序堆叠的二极管，使得来自每个二极管的光的波长从发光元件发射。

22. 发明授权

US06828593B2 Semiconductor light emitting element and its manufacturing method 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US06828593B2
公开(公告)日：2004-12-07
申请号：US10125289
申请日：2002-04-18
申请人： Hideto Sugawara , Masayuki Ishikawa
发明人： Hideto Sugawara , Masayuki Ishikawa
IPC分类号： H01L3300
CPC分类号： H01L33/007 , H01L21/02389 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01S5/32341
摘要： When a plurality of semiconductor layers including a nitride compound layer containing indium are stacked on a substrate, materials of layers above the indium containing nitride compound layer are limited to specific compounds, or their growth temperatures are limited within a predetermined range, to suppress thermal deterioration of the nitride compound layer containing indium or deterioration of the interface and to thereby grow a high-quality semiconductor light emitting element using nitride compound semiconductors. When manufacturing a nitride compound semiconductor light emitting element having a first layer made of a first nitride compound semiconductor containing indium and a second layer stacked on the first layer, conditions for stacking the second layer are selected those inside a closed region defined by connecting points plotted at x and y coordinates (364, 600), (364, 1010), (550, 1010), (650, 600) and (364, 600) on a graph taking emission wavelengths based on band-to-band transition of the first layer in nanometer on the x axis and taking growth temperatures of the second layer in ° C. on the y axis. Thus, a high-performance light emitting element can be made without inviting thermal deterioration of the first layer.
摘要翻译：当包含含有铟的氮化物化合物层的多个半导体层堆叠在基板上时，含铟氮化物层以上的层的材料被限制在特定化合物上，或者它们的生长温度被限制在预定范围内，以抑制热劣化的含有铟的氮化物化合物层或界面的劣化，从而使用氮化物半导体生长高品质的半导体发光元件。当制造具有由包含铟的第一氮化物化合物半导体制成的第一层的氮化物半导体发光元件和堆叠在第一层上的第二层时，选择堆叠第二层的条件是在由连接点绘制的闭合区域内的条件在图形上的x和y坐标（364,600），（364,1010），（550,1010），（650,600）和（364,600）上，取图表示基于波段的带 - 带转换的发射波长在x轴上以纳米为单位的第一层，并且在y轴上以°C取第二层的生长温度。因此，可以在不引起第一层的热劣化的情况下制造高性能的发光元件。

23. 发明授权

US06791424B2 Piezoelectric oscillator 有权
标题翻译：压电振荡器
公开(公告)号：US06791424B2
公开(公告)日：2004-09-14
申请号：US10088420
申请日：2002-03-13
申请人： Toshikazu Uchiyama , Hitoshi Takanashi , Masayuki Ishikawa , Koji Hosaka , Tomohiro Tamura , Yuuichi Oinuma , Takehiko Adachi , Shoji Izumiya
发明人： Toshikazu Uchiyama , Hitoshi Takanashi , Masayuki Ishikawa , Koji Hosaka , Tomohiro Tamura , Yuuichi Oinuma , Takehiko Adachi , Shoji Izumiya
IPC分类号： H03B536
CPC分类号： H03B5/06 , H03B5/36 , H03B5/364
摘要： Piezo oscillators having a quick start-up circuit, which applies a start-up quickening voltage to the piezo resonator only for a predetermined length of time after the application of power supply voltage, added to a piezo oscillating circuit. The start-up time taken for the piezo oscillators to reach the steady-estate oscillation from the non-oscillating state can be significantly shortened. The phase noise characteristics and frequency stability characteristics are not affected, since the start-up quickening voltage is removed after the predetermined length of time.
摘要翻译：具有快速启动电路的压电振荡器，其在施加电源电压之后在压电谐振器上施加启动加速电压至预定的时间长度，添加到压电振荡电路。压电振荡器从非振荡状态达到稳定振荡所需的启动时间可以大大缩短。相位噪声特性和频率稳定特性不受影响，因为启动加速电压在预定时间长度之后被去除。

24. 发明授权

US06554476B2 Dynamic pressure bearing device and method of manufacturing the same 有权
标题翻译：动压轴承装置及其制造方法
公开(公告)号：US06554476B2
公开(公告)日：2003-04-29
申请号：US09797777
申请日：2001-03-05
申请人： Masayuki Ishikawa , Hiromasa Marumo , Hiroshi Zenisawa
发明人： Masayuki Ishikawa , Hiromasa Marumo , Hiroshi Zenisawa
IPC分类号： F16C8206
CPC分类号： F16C33/107 , F16C17/107 , Y10T29/49645
摘要： In order to manufacture a dynamic pressure bearing device, there are provided a shaft member, and a thrust plate formed with a press-fitting portion into which the shaft member is press-fitted. At least two relief portions are formed in at least one of the press-fitting portion of the thrust plate and a part of the shaft member which corresponds to the press-fitting portion. The shaft member is press-fitted with the press-fitting portion such that the thrust plate extends perpendicular to an axial direction of the shaft member, while making the relief portions absorb press-fitting stress.
摘要翻译：为了制造动压轴承装置，设置有轴构件和形成有压配合部的压配合部的止推板。至少两个浮雕部分形成在止推板的压配部分中的至少一个和对应于压配部分的轴构件的一部分中。轴构件与压配部压配合，使得止推板垂直于轴构件的轴向延伸，同时使浮雕部分吸收压配应力。

25. 发明授权

US06320207B1 Light emitting device having flat growth GaN layer 失效
标题翻译：具有平坦生长GaN层的发光器件
公开(公告)号：US06320207B1
公开(公告)日：2001-11-20
申请号：US08844616
申请日：1997-04-21
申请人： Chisato Furukawa , Masayuki Ishikawa , Hideto Sugawara , Kenji Isomoto
发明人： Chisato Furukawa , Masayuki Ishikawa , Hideto Sugawara , Kenji Isomoto
IPC分类号： H01L3300
CPC分类号： H01L33/325 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02502 , H01L21/0251 , H01L21/0254 , H01L21/0262
摘要： A light emitting device has an N-type gallium nitride system compound semiconductor layer provided on a substrate; and a P-type gallium nitride system compound semiconductor layer provided on said N-type gallium nitride system compound semiconductor layer. The N-type gallium nitride compound semiconductor layer has such an area that an impurity concentration increases corresponding to a layer thickness from the side of said substrate.
摘要翻译：发光器件具有设置在基板上的N型氮化镓系化合物半导体层; 以及设置在所述N型氮化镓系化合物半导体层上的P型氮化镓系化合物半导体层。 N型氮化镓系化合物半导体层具有从基板一侧的层厚度的杂质浓度增加的面积。

26. 发明授权

US06281900B1 Information processing apparatus and method, and providing medium 失效
标题翻译：信息处理装置和方法，并提供介质
公开(公告)号：US06281900B1
公开(公告)日：2001-08-28
申请号：US09204003
申请日：1998-12-01
申请人： Masayuki Ishikawa
发明人： Masayuki Ishikawa
IPC分类号： G06F314
CPC分类号： G06F9/451
摘要： The invention provides an information processing apparatus and method and a providing medium by which editing of routing can be performed rapidly and readily. When a node which has no DEF name applied thereto is dropped into a route window, a routing editing tool provides a DEF name to the dropped node. When a node displayed in the route window or a scene graph window is dragged by a mouse and dropped to another node displayed in the scene graph window or the route window, the routing editing tool displays route candidates which can be set between the two nodes. When a user selects one of the displayed route candidates, the routing editing tool sets the selected route candidate as a route between the nodes.
摘要翻译：本发明提供一种信息处理设备和方法以及提供媒体，通过该介质可以快速，容易地执行路由编辑。当没有应用DEF名称的节点被丢弃到路由窗口中时，路由编辑工具向丢弃的节点提供DEF名称。当在路径窗口或场景图窗口中显示的节点被鼠标拖动并且丢弃到场景图窗口或路径窗口中显示的另一节点时，路由编辑工具显示可以在两个节点之间设置的路由候选。当用户选择显示的路由候选中的一个时，路由编辑工具将所选择的路由候选设置为节点之间的路由。

27. 发明授权

US06221684B1 GaN based optoelectronic device and method for manufacturing the same 失效
标题翻译： GaN基光电子器件及其制造方法
公开(公告)号：US06221684B1
公开(公告)日：2001-04-24
申请号：US09457331
申请日：1999-12-09
申请人： Hideto Sugawara , Masayuki Ishikawa
发明人： Hideto Sugawara , Masayuki Ishikawa
IPC分类号： H01L2100
CPC分类号： H01S5/32 , H01L33/04 , H01L33/145 , H01L33/20 , H01L33/32 , H01L33/325 , H01L33/42
摘要： An n-cap layer is formed on a top surface of p-type clad layers, the p-type clad layer is a top layer of a stacked structure having a pn-junction for emitting carriers into light-emitting region of a GaN based light-emitting device, thus increasing the activation ratio of acceptor impurities in the p-type clad layers. The n-cap layer is used also as a current blocking layer, thereby constructing a current-blocked structure. The n-cap layer should preferably be made of InuAlvGa1−u−vN (0
摘要翻译：在p型覆盖层的顶表面上形成n盖层，p型覆盖层是具有用于将载流子发射到GaN基光的发光区域的pn结的层叠结构的顶层从而增加p型覆层中受主杂质的活化率。 n帽层也用作电流阻挡层，从而构成电流阻挡结构。 n帽层应优选由厚度为1.0微米以上的InuAlvGa1-u-vN（0

28. 发明授权

US06185238B2 Nitride compound semiconductor laser and its manufacturing method 失效
标题翻译：氮化物半导体激光器及其制造方法
公开(公告)号：US06185238B2
公开(公告)日：2001-02-06
申请号：US09026913
申请日：1998-02-20
申请人： Masaaki Onomura , Genichi Hatakoshi , Shinya Nunoue , Masayuki Ishikawa
发明人： Masaaki Onomura , Genichi Hatakoshi , Shinya Nunoue , Masayuki Ishikawa
IPC分类号： H01S319
CPC分类号： B82Y20/00 , H01L2224/16225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48464 , H01L2224/49107 , H01L2224/73265 , H01S5/0213 , H01S5/0224 , H01S5/02272 , H01S5/2213 , H01S5/2219 , H01S5/3211 , H01S5/34333 , H01L2924/00014 , H01L2924/00
摘要： In a nitride compound semiconductor laser including an active layer sandwiched by semiconductor layers of different conduction types on a sapphire substrate, layers of polyimide for current blocking and light confinement are formed on side surfaces of a mesa-type current confining structure with and under the p-side electrode. The laser ensures efficient, uniform carrier injection into the active layer, suppresses higher-order modes other than the fundamental transverse mode, and thereby promises a high reliability ensuring continuous pulsation under a low threshold current and a low operation voltage with low noise characteristics.
摘要翻译：在蓝宝石衬底上包含由不同导电类型的半导体层夹持的有源层的氮化物化合物半导体激光器中，在p型和p型的台面型限流结构的侧面形成用于电流阻挡和光限制的聚酰亚胺层侧电极。激光器确保有源层中有效均匀的载流子注入，抑制基本横模以外的高次模，从而保证高可靠性，确保在低阈值电流和低噪声特性的低工作电压下连续脉动。

29. 发明授权

US6125862A Cleaning apparatus 失效
标题翻译：清洁装置
公开(公告)号：US6125862A
公开(公告)日：2000-10-03
申请号：US942019
申请日：1997-10-01
申请人： Masayuki Ishikawa , Shin-ichi Niwa , Mitsuharu Iwamoto
发明人： Masayuki Ishikawa , Shin-ichi Niwa , Mitsuharu Iwamoto
IPC分类号： B08B3/04 , C23G3/00 , F26B5/14 , F26B15/10 , B08B3/02
CPC分类号： B08B3/04 , C23G3/00 , F26B15/10 , F26B5/14
摘要： Cleaning apparatus provide for the cleaning of a workpiece by first immersing the workpiece in a cleaning tank having a cleaning liquid therein for a predetermined period of time, removing the workpiece from the cleaning tank, moving the workpiece through air for a pre-selected period of time, and supplying the workpiece to a drying device which then dries the workpiece. As the workpiece is moved through the air, the workpiece may be vibrated, moved at an incline then a decline, and/or have air blasted at it, so that any liquid, e.g. rinsing solution, remaining thereon is caused to fall off, such occurring prior to the drying of the workpiece by the drying device.
摘要翻译：清洁装置通过首先将工件浸入其中具有清洁液体的清洗槽中预定的时间段，从而将工件从清洗槽中移出，将工件移动通过空气预先选定的时间段时间，并将工件供应到干燥装置，然后干燥工件。当工件移动通过空气时，工件可以振动，以倾斜方式移动然后下降，和/或在其上进行空气喷射，使得任何液体，例如，残留在其上的冲洗溶液脱落，这在干燥装置干燥工件之前发生。

30. 发明授权

US6121634A Nitride semiconductor light emitting device and its manufacturing method 失效
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US6121634A
公开(公告)日：2000-09-19
申请号：US27490
申请日：1998-02-20
申请人： Shinji Saito , Genichi Hatakoshi , Masaaki Onomura , Hidetoshi Fujimoto , Norio Iizuka , Chiharu Nozaki , Johji Nishio , Masayuki Ishikawa
发明人： Shinji Saito , Genichi Hatakoshi , Masaaki Onomura , Hidetoshi Fujimoto , Norio Iizuka , Chiharu Nozaki , Johji Nishio , Masayuki Ishikawa
IPC分类号： H01L33/02 , H01L33/32 , H01S5/343 , H01L27/15 , H01L31/12 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/025 , H01S5/34333
摘要： In a nitride compound semiconductor light emitting device, an In.sub.0.3 Ga.sub.0.7 N/GaN multi-quantum well active layer 105 or an In.sub.0.1 Ga.sub.0.9 N/GaN multi-quantum well adjacent layer 104 is made as a saturable absorptive region so that self-pulsation occurs there. Thus, the device ensures self-pulsation with a high probability with a simple structure, and satisfies requirements for use as an optical head for reading data from an optical disc.
摘要翻译：在氮化物化合物半导体发光器件中，将In0.3Ga0.7N / GaN多量子阱有源层105或In0.1Ga0.9N / GaN多量子阱相邻层104制成为可饱和吸收区域，使得自身脉搏发生在那里。因此，该装置以简单的结构以高概率确保自脉动，并且满足用作从光盘读取数据的光学头的要求。

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