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21. 发明授权

US07198888B2 Water-soluble material, chemically amplified resist and pattern formation method using the same 有权
公开(公告)号：US07198888B2
公开(公告)日：2007-04-03
申请号：US11013333
申请日：2004-12-17
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/20 , G03F7/30 , G03F7/09 , G03C1/76
CPC分类号： G03F7/11 , G03F7/0045 , G03F7/0392 , G03F7/095
摘要： A water-soluble material used for forming a water-soluble film on a chemically amplified resist film includes a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator. Also, in a pattern formation method, a chemically amplified resist film is formed on a substrate, and a water-soluble film made of a water-soluble material including a water-soluble polymer, an acid generator and a compound constructing an inclusion compound for incorporating the acid generator is formed on the resist film. Thereafter, pattern exposure is carried out by selectively irradiating the resist film with exposing light through the water-soluble film, the resultant resist film is developed and the water-soluble film is removed. Thus, a resist pattern made of the resist film is formed.

22. 发明授权

US07169869B2 Polymers, resist compositions and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US07169869B2
公开(公告)日：2007-01-30
申请号：US11179606
申请日：2005-07-13
申请人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Kazuhiko Maeda , Michitaka Ootani , Haruhiko Komoriya
发明人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Kazuhiko Maeda , Michitaka Ootani , Haruhiko Komoriya
IPC分类号： C08F12/30
CPC分类号： C08F28/02 , G03F7/0046 , G03F7/0392 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： A resist composition comprising a polymer containing vinyl sulfonate units having fluorinated hydrophilic groups as a base resin has excellent transparency, substrate adhesion and developer penetrability as well as plasma etching resistance, and is suited for lithographic microprocessing.
摘要翻译：包含具有氟化亲水基团的乙烯基磺酸酯单元作为基础树脂的聚合物的抗蚀剂组合物具有优异的透明性，底物粘合性和显影剂渗透性以及耐等离子体耐蚀刻性，并且适用于光刻微处理。

23. 发明申请

US20060289849A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 审中-公开
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US20060289849A1
公开(公告)日：2006-12-28
申请号：US11512968
申请日：2006-08-29
申请人： Fujio Yagihashi , Yoshitaka Hamada , Hideo Nakagawa , Masaru Sasago
发明人： Fujio Yagihashi , Yoshitaka Hamada , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L29/04
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： The invention includes a semiconductor device. Specifically provided is a semiconductor device comprising a porous film therein, the porous film being formable by a composition comprising a surfactant, an aprotic polar solvent and a solution comprising a polymer formed by hydrolysis and condensation of one or more silane compounds represented by foramula (1) : RnSi(OR′)4-n. Also provided is a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and transforming the dried film to a porous film by removing said surfactant. The porous film obtained from the composition for forming porous film is further provided.
摘要翻译：本发明包括半导体器件。具体提供的是其中包含多孔膜的半导体器件，多孔膜可通过包含表面活性剂，非质子极性溶剂和包含由一个或多个由下列物质表示的硅烷化合物的水解和缩合形成的聚合物（1 ）：R n Si（OR'）4-n 还提供了一种制造多孔膜的方法，包括以下步骤：施加所述组合物以形成膜，干燥膜并通过除去所述表面活性剂将干燥的膜转化为多孔膜。进一步提供由多孔膜形成用组合物得到的多孔膜。

24. 发明授权

US07135273B2 Pattern formation method 有权
标题翻译：图案形成方法
公开(公告)号：US07135273B2
公开(公告)日：2006-11-14
申请号：US10713217
申请日：2003-11-17
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/20
CPC分类号： G03F7/0382 , G03F7/0046 , G03F7/0392 , G03F7/2041
摘要： After forming a resist film of a chemically amplified resist material, pattern exposure is carried out by selectively irradiating the resist film with exposing light while supplying, onto the resist film, a solution including a basic compound. After the pattern exposure, the resist film is subjected to post-exposure bake and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.
摘要翻译：在形成化学放大抗蚀剂材料的抗蚀剂膜之后，通过在向抗蚀剂膜上提供包含碱性化合物的溶液的同时，通过曝光来选择性地照射抗蚀剂膜来进行图案曝光。在图案曝光之后，对抗蚀剂膜进行曝光后烘烤，然后用碱性显影剂显影。因此，可以形成由抗蚀剂膜的未曝光部分制成的抗蚀图案，形状良好。

25. 发明授权

US07132224B2 Pattern formation method 有权
标题翻译：图案形成方法
公开(公告)号：US07132224B2
公开(公告)日：2006-11-07
申请号：US10661542
申请日：2003-09-15
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/20
CPC分类号： G03F7/0048 , G03F7/0045 , G03F7/0382 , G03F7/0395 , G03F7/2041
摘要： After forming a resist film of a chemically amplified resist material including a base polymer, an acid generator for generating an acid through irradiation with light and lactone, pattern exposure is performed by selectively irradiating the resist film with exposing light while supplying, onto the resist film, water that is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake, and is then developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.
摘要翻译：在形成包含基础聚合物的化学放大抗蚀剂材料的抗蚀剂膜之后，通过照射光和内酯产生酸的酸发生剂，通过在将抗蚀剂膜供给到抗蚀剂膜上的同时选择性地照射抗蚀剂膜来进行图案曝光，循环并临时储存在溶液储存器中的水。在图案曝光之后，对抗蚀剂膜进行曝光后烘烤，然后用碱性显影剂显影。因此，可以形成由抗蚀剂膜的未曝光部分制成的抗蚀图案，形状良好。

26. 发明授权

US07119354B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film 失效
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜
公开(公告)号：US07119354B2
公开(公告)日：2006-10-10
申请号：US10810360
申请日：2004-03-26
申请人： Fujio Yagihashi , Yoshitaka Hamada , Hideo Nakagawa , Masaru Sasago
发明人： Fujio Yagihashi , Yoshitaka Hamada , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L47/00
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： Provided is a coating liquid which can easily form a porous film having desirably controlled thickness by the method used for a usual semiconductor process, and having an excellent mesopore channel structure. Specifically provided is a composition for forming porous film comprising a surfactant, an aprotic polar solvent and a solution comprising a polymer formed by hydrolysis and condensation of one or more silane compounds represented by foramula (1): RnSi(OR′)4-n. Also provided is a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and transforming the dried film to a porous film by removing said surfactant. The porous film obtained from the composition for forming porous film is further provided.
摘要翻译：本发明提供一种可以通过通常的半导体工艺使用的方法容易地形成具有期望的控制厚度的多孔膜并具有优异的中孔通道结构的涂布液。具体地提供了一种用于形成多孔膜的组合物，其包含表面活性剂，非质子极性溶剂和包含通过水解和缩合由（1）表示的一种或多种硅烷化合物形成的聚合物的溶液：RnSi（OR'）4 -n 。还提供了一种制造多孔膜的方法，包括以下步骤：施加所述组合物以形成膜，干燥膜并通过除去所述表面活性剂将干燥的膜转化为多孔膜。进一步提供由多孔膜形成用组合物得到的多孔膜。

27. 发明申请

US20060202356A1 Material for forming insulating film with low dielectric constant, low dielectric insulating film, method for forming low dielectric insulating film and semiconductor device 审中-公开
公开(公告)号：US20060202356A1
公开(公告)日：2006-09-14
申请号：US11431000
申请日：2006-05-10
申请人： Hideo Nakagawa , Masaru Sasago
发明人： Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L23/48
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/312 , H01L21/316 , H01L21/31695 , H01L23/5222 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2221/1047 , H01L2224/04042 , H01L2224/05093 , H01L2224/05556 , H01L2224/05599 , H01L2224/27416 , H01L2224/451 , H01L2224/48463 , H01L2224/85424 , H01L2224/85447 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01074 , H01L2924/12044 , H01L2224/45099 , H01L2924/00
摘要： A material for forming an insulating film with low dielectric constant of this invention is a solution including a fine particle principally composed of a silicon atom and an oxygen atom and having a large number of pores, a resin and a solvent.

28. 发明授权

US07094521B2 Pattern formation method and exposure system 有权
公开(公告)号：US07094521B2
公开(公告)日：2006-08-22
申请号：US10640061
申请日：2003-08-14
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/00 , G03F7/20
CPC分类号： G03F7/2041
摘要： After forming a resist film made from a chemically amplified resist material, pattern exposure is carried out by irradiating the resist film with exposing light while supplying, between a projection lens and the resist film, a solution of water (having a refractive index of 1.44) that includes an antifoaming agent and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake, and the resultant resist film is developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.

29. 发明申请

US20060160032A1 Pattern formation method and exposure system 审中-公开
标题翻译：图案形成方法和曝光系统
公开(公告)号：US20060160032A1
公开(公告)日：2006-07-20
申请号：US11376188
申请日：2006-03-16
申请人： Masayuki Endo , Masaru Sasago
发明人： Masayuki Endo , Masaru Sasago
IPC分类号： G03F7/00
CPC分类号： G03F7/2041
摘要： After forming a resist film made from a chemically amplified resist material, pattern exposure is carried out by irradiating the resist film with exposing light while supplying, between a projection lens and the resist film, a solution of water (having a refractive index of 1.44) that includes an antifoaming agent and is circulated and temporarily stored in a solution storage. After the pattern exposure, the resist film is subjected to post-exposure bake, and the resultant resist film is developed with an alkaline developer. Thus, a resist pattern made of an unexposed portion of the resist film can be formed in a good shape.
摘要翻译：在形成由化学放大抗蚀剂材料制成的抗蚀剂膜之后，通过在曝光光下照射抗蚀剂膜，同时在投影透镜和抗蚀剂膜之间提供水（折射率为1.44）的溶液来进行图案曝光，其包括消泡剂并且循环并临时储存在溶液储存器中。在图案曝光之后，对抗蚀剂膜进行曝光后烘烤，并且用碱性显影剂使得到的抗蚀剂膜显影。因此，可以形成由抗蚀剂膜的未曝光部分制成的抗蚀图案，形状良好。

30. 发明授权

US07067231B2 Polymers, resist compositions and patterning process 有权
标题翻译：聚合物，抗蚀剂组合物和图案化工艺
公开(公告)号：US07067231B2
公开(公告)日：2006-06-27
申请号：US10968971
申请日：2004-10-21
申请人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Kazuhiko Maeda , Haruhiko Komoriya , Kazuhiro Yamanaka
发明人： Yuji Harada , Jun Hatakeyama , Yoshio Kawai , Masaru Sasago , Masayuki Endo , Shinji Kishimura , Kazuhiko Maeda , Haruhiko Komoriya , Kazuhiro Yamanaka
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0046 , C08F220/24 , G03F7/0397 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A polymer comprising recurring units having a partial structure of formula (1) wherein R1 is a single bond or alkylene or fluoroalkylene, R2 and R3 are H or alkyl or fluoroalkyl, at least one of R2 and R3 contains at least one fluorine atom is used as a base resin to formulate a resist composition which has advantages including high transparency to radiation having a wavelength of up to 200 nm, substrate adhesion, developer affinity and dry etching resistance
摘要翻译：包含具有式（1）的部分结构的重复单元的聚合物，其中R 1是单键或亚烷基或氟代亚烷基，R 2和R 3， SUP>是H或烷基或氟代烷基，R 2和R 3中的至少一个含有至少一个氟原子用作基础树脂以配制抗蚀剂组合物，其中具有波长高达200nm的辐射的高透明度，底物粘附性，显影剂亲和性和耐干蚀刻性的优点

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