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21. 发明授权

US07884369B2 Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same 有权
标题翻译：接线及其制造方法以及接线板及其制造方法
公开(公告)号：US07884369B2
公开(公告)日：2011-02-08
申请号：US11525016
申请日：2006-09-22
申请人： Shunpei Yamazaki , Hideomi Suzawa , Koji Ono , Yoshihiro Kusuyama
发明人： Shunpei Yamazaki , Hideomi Suzawa , Koji Ono , Yoshihiro Kusuyama
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L29/4908 , G02F2001/13629 , H01L23/5283 , H01L23/53223 , H01L27/3241 , H01L29/66757 , H01L29/78621 , H01L29/78645 , H01L29/78648 , H01L51/5203 , H01L2924/0002 , H01L2924/12044 , H01L2924/3011 , H01L2924/00
摘要： The wiring of the present invention has a layered structure that includes a first conductive layer (first layer) having a first width and made of one or a plurality of kinds of elements selected from W and Mo, or an alloy or compound mainly containing the element, a low-resistant second conductive layer (second layer) having a second width smaller than the first width, and made of an alloy or a compound mainly containing Al, and a third conductive layer (third layer) having a third width smaller than the second width, and made of an alloy or compound mainly containing Ti. With this constitution, the present invention is fully ready for enlargement of a pixel portion. At least edges of the second conductive layer have a taper-shaped cross-section. Because of this shape, satisfactory coverage can be obtained.
摘要翻译：本发明的布线具有层状结构，其包括具有第一宽度的第一导电层（第一层），并且由选自W和Mo的一种或多种元素制成，或者主要包含元素的合金或化合物，具有小于第一宽度的第二宽度的低电阻的第二导电层（第二层），并且由主要包含Al的合金或化合物制成，以及具有小于第三宽度的第三宽度的第三导电层（第三层）第二宽度，由主要含有Ti的合金或化合物制成。利用这种结构，本发明完全准备好用于像素部分的放大。第二导电层的至少边缘具有锥形横截面。由于这种形状，可以获得令人满意的覆盖。

22. 发明授权

US07804142B2 Semiconductor device and fabrication method thereof 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US07804142B2
公开(公告)日：2010-09-28
申请号：US11743189
申请日：2007-05-02
申请人： Shunpei Yamazaki , Hideomi Suzawa , Koji Ono , Yoshihiro Kusuyama
发明人： Shunpei Yamazaki , Hideomi Suzawa , Koji Ono , Yoshihiro Kusuyama
IPC分类号： H01L29/76
CPC分类号： H01L27/1296 , H01L21/26513 , H01L21/266 , H01L21/32136 , H01L21/32139 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L27/1288 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L2029/7863
摘要： For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.
摘要翻译：为了形成栅电极，层叠具有低电阻的包含Al或以Al为主要成分的材料的导电膜和用于防止Al扩散到半导体层中的具有低接触电阻的导电膜，并且栅电极由使用能够高速进行蚀刻处理的装置。

23. 发明授权

US07560734B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07560734B2
公开(公告)日：2009-07-14
申请号：US11305212
申请日：2005-12-19
申请人： Koji Ono , Hideomi Suzawa , Tatsuya Arao
发明人： Koji Ono , Hideomi Suzawa , Tatsuya Arao
IPC分类号： H01L27/14
CPC分类号： H01L27/1222 , G02F1/13624 , H01L27/12 , H01L27/1214 , H01L27/124 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L33/08 , H01L33/62 , H01L2029/7863 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region.
摘要翻译：在半导体器件（通常为有源矩阵显示器件）中，根据电路的功能，布置在各个电路中的TFT的结构是合适的，并且随着半导体器件的工作特性和可靠性的提高，制造降低成本，并通过减少工艺步骤的数量来提高产量。半导体器件具有半导体层，与半导体层接触形成的绝缘膜和在绝缘膜上具有锥形部分的栅电极，在半导体器件中，半导体层具有沟道形成区，形成第一杂质区源极区域或漏极区域，并且包含单一导电型杂质元素，以及用于形成与沟道形成区域接触的LDD区域的第二杂质区域，第二杂质区域的一部分与栅电极重叠，并且浓度包含在第二杂质区域中的单一导电型杂质元素随着与沟道形成区域的距离而变大。

24. 发明授权

US07422934B2 Method of fabricating a light emitting device 有权
标题翻译：制造发光器件的方法
公开(公告)号：US07422934B2
公开(公告)日：2008-09-09
申请号：US11465360
申请日：2006-08-17
申请人： Shunpei Yamazaki , Hideomi Suzawa , Koji Ono , Toru Takayama
发明人： Shunpei Yamazaki , Hideomi Suzawa , Koji Ono , Toru Takayama
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/4908 , H01L27/124 , H01L27/1288 , H01L27/32 , H01L27/3244 , H01L27/3246 , H01L27/3262 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L51/5284 , H01L2029/7863
摘要： There is provided an inexpensive light emitting device and an electronic instrument using the same. In this invention, photolithography steps relating to manufacture of a transistor are reduced, so that the yield of the light emitting device is improved and the manufacturing period thereof is shortened. A feature is that a gate electrode is formed of conductive films of plural layers, and by using the selection ratio of those at the time of etching, the concentration of an impurity region formed in an active layer is adjusted.
摘要翻译：提供了廉价的发光装置和使用它的电子仪器。在本发明中，与晶体管的制造有关的光刻步骤减少，从而提高了发光器件的产量，并缩短了其制造周期。特征在于，栅电极由多层导电膜形成，通过使用蚀刻时的选择比，调节在有源层中形成的杂质区域的浓度。

25. 发明申请

US20080179674A1 Semiconductor device and method of fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080179674A1
公开(公告)日：2008-07-31
申请号：US11976171
申请日：2007-10-22
申请人： Hideomi Suzawa , Koji Ono , Hideto Ohnuma , Hirokazu Yamagata , Shunpei Yamazaki
发明人： Hideomi Suzawa , Koji Ono , Hideto Ohnuma , Hirokazu Yamagata , Shunpei Yamazaki
IPC分类号： H01L27/12
CPC分类号： G02F1/13454 , H01L27/124 , H01L27/1255 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78633 , H01L29/78645 , H01L2029/7863
摘要： TFTs arranged in various circuits have structures that are suited for circuit functions, in order to improve operation characteristics and reliability of the semiconductor device, to lower consumption of electric power, to decrease the number of steps, to lower the cost of production and to improve the yield. The gradient of concentration of impurity element for controlling the conduction type in the LDD regions 622 and 623 of the TFT is such that the concentration increases toward the drain region. For this purpose, a tapered gate electrode 607 and a tapered gate-insulating film 605 are formed, and the ionized impurity element for controlling the conduction type is added to the semiconductor layer through the gate-insulating film 605.
摘要翻译：布置在各种电路中的TFT具有适于电路功能的结构，以便提高半导体器件的操作特性和可靠性，降低电力消耗，减少步骤数量，降低生产成本和改善产量。用于控制TFT的LDD区域622和623中的导电类型的杂质元素的浓度梯度使得浓度朝着漏极区增加。为此，形成锥形栅电极607和锥形栅极绝缘膜605，并且用于控制导电类型的电离杂质元件通过栅极绝缘膜605添加到半导体层。

26. 发明申请

US20070246777A1 ELECTRONIC APPLIANCE INCLUDING TRANSISTOR HAVING LDD REGION 有权
标题翻译：包含LDD区域的晶体管的电子器件
公开(公告)号：US20070246777A1
公开(公告)日：2007-10-25
申请号：US11469768
申请日：2006-09-01
申请人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
发明人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
IPC分类号： H01L27/12
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L2029/7863
摘要： A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.
摘要翻译：提供了一种高可靠性的半导体显示装置。半导体显示装置中的半导体层具有沟道形成区域，LDD区域，源极区域和漏极区域，并且LDD区域与第一栅极电极重叠，夹着栅极绝缘膜。

27. 发明授权

US07218361B2 Semiconductor display device and manufacturing method thereof 有权
标题翻译：半导体显示装置及其制造方法
公开(公告)号：US07218361B2
公开(公告)日：2007-05-15
申请号：US09809646
申请日：2001-03-16
申请人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
发明人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
IPC分类号： G02F1/136
CPC分类号： H01L27/1214 , G02F1/13454 , G02F1/1368 , H01L27/124 , H01L27/127
摘要： A highly reliable semiconductor display device is provided. The semiconductor display device has a channel forming region, an LDD region, and a source region and a drain region in a semiconductor layer, and the LDD region overlaps with a first gate electrode, sandwiching a gate insulating film.
摘要翻译：提供了高度可靠的半导体显示装置。半导体显示装置在半导体层中具有沟道形成区域，LDD区域，源极区域和漏极区域，并且LDD区域与第一栅极电极重叠，夹着栅极绝缘膜。

28. 发明授权

US07190114B2 Light emitting display device with thin film transistor having organic and inorganic insulating films 有权
标题翻译：具有薄膜晶体管的发光显示装置，具有有机和无机绝缘膜
公开(公告)号：US07190114B2
公开(公告)日：2007-03-13
申请号：US11120852
申请日：2005-05-03
申请人： Hirokazu Yamagata , Hisao Ikeda , Yoshimi Adachi , Noriko Miyagi , Tatsuya Arao , Koji Ono
发明人： Hirokazu Yamagata , Hisao Ikeda , Yoshimi Adachi , Noriko Miyagi , Tatsuya Arao , Koji Ono
IPC分类号： H01L27/32 , H01L51/00
CPC分类号： H01L27/3246 , H01L27/3244 , H01L27/3248 , H01L27/3258 , H01L51/5206 , H01L51/5253
摘要： A light emitting display device comprises a thin film transistor formed over a substrate, a first insulating film comprising an organic material and formed over the thin film transistor, a second insulating film comprising at least one material selected from the group consisting of aluminum nitride, aluminum nitride oxide, and aluminum oxynitride formed over the first insulating film, an anode formed in contact with the second insulating film, a light emitting layer formed over the anode, and a cathode formed over the light emitting layer.
摘要翻译：发光显示装置包括形成在基板上的薄膜晶体管，包含有机材料并形成在薄膜晶体管上的第一绝缘膜，第二绝缘膜，包括选自氮化铝，铝形成在第一绝缘膜上的氮氧化物和氧氮化铝，形成在第二绝缘膜上的阳极，形成在阳极上的发光层，以及形成在发光层上的阴极。

29. 发明授权

US07151015B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07151015B2
公开(公告)日：2006-12-19
申请号：US09852672
申请日：2001-05-11
申请人： Hideomi Suzawa , Koji Ono , Toru Takayama , Tatsuya Arao , Shunpei Yamazaki
发明人： Hideomi Suzawa , Koji Ono , Toru Takayama , Tatsuya Arao , Shunpei Yamazaki
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/124 , H01L21/32136 , H01L27/1214 , H01L27/127 , H01L27/1288 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/78621 , H01L29/78627 , H01L29/78684 , H01L2029/7863
摘要： There has been a problem that the manufacturing process is complicated and the number of processes is increased when a TFT with an LDD structure or a TFT with a GOLD structure is formed. In a method of manufacturing a semiconductor device, after low concentration impurity regions (24, 25) are formed in a second doping process, a width of the low concentration impurity region which is overlapped with the third electrode (18c) and a width of the low concentration impurity region which is not overlapped with the third electrode can be freely controlled by a fourth etching process. Thus, in a region overlapped with the third electrode, a relaxation of electric field concentration is achieved and then a hot carrier injection can be prevented. And, in the region which is not overlapped with the third electrode, the off-current value can be suppressed.
摘要翻译：当形成具有LDD结构的TFT或具有GOLD结构的TFT时，存在制造过程复杂并且处理次数增加的问题。在制造半导体器件的方法中，在第二掺杂工艺中形成低浓度杂质区（24,25）之后，与第三电极（18c）重叠的低浓度杂质区的宽度和可以通过第四蚀刻工艺来自由地控制不与第三电极重叠的低浓度杂质区域。因此，在与第三电极重叠的区域中，实现电场浓度的松弛，然后可以防止热载流子注入。并且，在不与第三电极重叠的区域中，可以抑制截止电流值。

30. 发明授权

US07112817B2 Electronic appliance including transistor having LDD region 有权
标题翻译：电子设备包括具有LDD区域的晶体管
公开(公告)号：US07112817B2
公开(公告)日：2006-09-26
申请号：US10838267
申请日：2004-05-05
申请人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
发明人： Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： H01L27/1222 , G02F1/13454 , H01L27/124 , H01L27/1255 , H01L27/127 , H01L29/42384 , H01L29/4908 , H01L29/78621 , H01L2029/7863
摘要： A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.
摘要翻译：提供了一种高可靠性的半导体显示装置。半导体显示装置中的半导体层具有沟道形成区域，LDD区域，源极区域和漏极区域，并且LDD区域与第一栅极电极重叠，夹着栅极绝缘膜。

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