专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US5720861A Magnetic recording medium 失效
标题翻译：磁记录介质
公开(公告)号：US5720861A
公开(公告)日：1998-02-24
申请号：US516046
申请日：1995-08-17
申请人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara
发明人： Hideo Kaneko , Katsushi Tokunaga , Yoshio Tawara
IPC分类号： G11B5/73 , G11B5/851 , C23C14/34
CPC分类号： G11B5/7315 , G11B5/851
摘要： An improvement is proposed in the method for the preparation of a magnetic recording medium comprising a non-magnetic substrate plate of silicon and a magnetic recording layer formed on the substrate surface by the method of bias-sputtering, by which the magnetic recording layer can be imparted with an unexpectedly large coercive force. The improvement can be accomplished by the use of a silicon substrate plate which has a volume resistivity not exceeding 2 ohm-cm at room temperature. The improvement is more remarkable when the contact resistance between the silicon substrate plate and the substrate holder is kept not to exceed 10 kohm during the bias-sputtering for the formation of the magnetic recording layer on the substrate surface.
摘要翻译：在通过偏置溅射的方法制备磁记录介质的方法中提出了一种磁记录介质的方法，所述磁记录介质包括硅非磁性基板和形成在基板表面上的磁记录层，通过该方法磁记录层可以赋予了意想不到的大矫顽力。可以通过使用在室温下体积电阻率不超过2欧姆 - 厘米的硅衬底板来实现改进。当在衬底表面上形成磁记录层的偏压溅射期间，当硅衬底板和衬底保持器之间的接触电阻保持不超过10Kohm时，这种改进是更显着的。

22. 发明授权

US5335715A Method and apparatus for continuous casting 失效
标题翻译：连铸方法及装置
公开(公告)号：US5335715A
公开(公告)日：1994-08-09
申请号：US742422
申请日：1991-08-08
申请人： Haruo Ohguro , Toshihiro Kosuge , Ryuuzou Hanzawa , Shogo Matsumura , Hiroyuki Kawai , Youji Ao , Tsutomu Fujii , Hideo Kaneko , Hatsuyoshi Kumashiro
发明人： Haruo Ohguro , Toshihiro Kosuge , Ryuuzou Hanzawa , Shogo Matsumura , Hiroyuki Kawai , Youji Ao , Tsutomu Fujii , Hideo Kaneko , Hatsuyoshi Kumashiro
IPC分类号： B22D11/04 , B22D11/045 , B22D11/047 , B22D11/00
CPC分类号： B22D11/047 , B22D11/045
摘要： A continuous cast method comprises continuously supplying molten metal from a tundish through a break ring to a cooled mold having an inlet and an outlet. A cast section is formed by continuously cooling the molten metal in the mold and starting the solidification of the molten metal below its surface and intermittently withdrawing the cast section with respect to the mold through its outlet. During continuous casting, a sealing gas having a pressure higher than atmospheric and soluble in the molten metal is constantly supplied to the entirety of the contact area of the mold and the break ring.
摘要翻译：连续铸造方法包括将熔融金属从中间包通过断裂环连续供应到具有入口和出口的冷却模具。通过连续冷却模具中的熔融金属并使熔融金属在其表面下方的凝固开始并且通过其出口相对于模具间歇地取出铸造部分而形成铸造部分。在连续铸造期间，不断地向模具和断环的接触区域的整体提供具有高于大气压并且可溶于熔融金属的压力的密封气体。

23. 发明授权

US4495982A Horizontal continuous casting method 失效
标题翻译：卧式连铸法
公开(公告)号：US4495982A
公开(公告)日：1985-01-29
申请号：US441704
申请日：1982-11-15
申请人： Hideo Kaneko , Hatuyoshi Kumashiro , Akira Iwata
发明人： Hideo Kaneko , Hatuyoshi Kumashiro , Akira Iwata
IPC分类号： B22D11/10 , B22D11/047 , B22D11/115 , B22D11/16
CPC分类号： B22D11/115 , B22D11/047
摘要： A horizontal continuous casting method for continuously feeding a molten metal stored in a tundish through a tundish nozzle located in the vicinity of the tundish at its bottom to a mold horizontally connected to the tundish nozzle to produce a strand, wherein an electromagnetic field generating device is arranged in the vicinity of the boundary between the tundish nozzle and the mold for exerting an electromagnetic force directed toward a center of the molten metal flowing through the vicinity of the boundary or in a strand withdrawing direction, to separate the molten metal from the inner surface of the tundish mozzle anterior to the boundary with respect to the strand withdrawing direction, to allow the molten metal to come into contact with the inner surface of the mold posterior to the boundary with respect to the strand withdrawing direction. Control of the electromagnetic force exerted on the molten metal is effected by the electromagnetic field generating device arranged in the vicinity of the boundary in such a manner that a point at which the molten metal begins to come into contact with the inner surface of the mold coincides with a predetermined point. The electromagnetic force may also be controlled in such a manner that the points at which the molten metal begins to come into contact with the inner surface of the mold are brought to the same position peripherally of the molten metal with respect to the axis thereof.
摘要翻译：一种水平连续铸造方法，用于通过位于中间包底部附近的中间包喷嘴将存储在中间包中的熔融金属连续地供给到与中间包喷嘴水平连接的模具以产生绞合线，其中电磁场产生装置是布置在中间包喷嘴和模具之间的边界附近，用于施加指向流经边界附近或以线材退出方向的熔融金属的中心的电磁力，以将熔融金属与内表面分离的中间包堰相对于股线退出方向在边界之前，允许熔融金属相对于股线退出方向与边界的后表面接触。施加在熔融金属上的电磁力的控制是通过布置在边界附近的电磁场产生装置以熔融金属开始与模具内表面接触的点重合的方式实现的具有预定点。电磁力也可以以使熔融金属开始与模具的内表面接触的点相对于其熔融金属在熔融金属的周围处于相同位置的方式进行控制。

24. 发明授权

US4424432A Electrode material for travelling-wire type electrical discharge machining 失效
标题翻译：用于行走式放电加工的电极材料
公开(公告)号：US4424432A
公开(公告)日：1984-01-03
申请号：US956329
申请日：1978-10-31
申请人： Hideo Kaneko , Makoto Onoue
发明人： Hideo Kaneko , Makoto Onoue
IPC分类号： B23H7/08 , B23K35/04 , C22C9/00 , B23K9/16
CPC分类号： B23H7/08
摘要： A method of electrical machining by the travelling-wire EDM process is improved by utilizing as the wire electrode for increased removal rate and reduced wear an electrode material which is drawn from a composition of 0.1 to 3% by weight zirconium, 0.3 to 10% zinc and the balance copper.
摘要翻译：通过利用作为线电极用于提高去除率和减少磨损的电线材料，通过使用0.1〜3重量％的锆，0.3〜10重量％的锌，和铜的平衡。

25. 发明授权

US4290306A Method and apparatus for probing into a refining furnace or the like for temperature measurement for sampling, or for both 失效
标题翻译：用于探测精炼炉等的用于采样的温度测量或两者的方法和装置
公开(公告)号：US4290306A
公开(公告)日：1981-09-22
申请号：US126105
申请日：1980-02-29
申请人： Keikichi Murakami , Hideo Kaneko
发明人： Keikichi Murakami , Hideo Kaneko
IPC分类号： C21C5/46 , G01K1/14 , G01K13/12 , G01N1/12
CPC分类号： C21C5/4673 , G01K1/146 , G01K13/125 , G01N1/125 , Y02P10/143
摘要： For sampling, and/or measuring the temperature of, the molten metal within a furnace such as a steel converter, a probe is inserted into the furnace through an opening formed at or in the adjacency of its bottom. An inert gas, either singly or in combination with oxygen and a hydrocarbon gas such as propane, butane, and natural gas, is constantly blown into the furnace through the opening in order to prevent the influx of the molten metal.
摘要翻译：为了对诸如钢转炉的炉子内的熔融金属进行采样和/或测量温度，通过在其底部邻近形成的开口将探头插入炉中。为了防止熔融金属的流入，惰性气体单独地或与氧气和烃气体如丙烷，丁烷和天然气一起被吹入炉中。

26. 发明授权

US08920666B2 Etching method and photomask blank processing method 有权
标题翻译：蚀刻方法和光掩模坯料加工方法
公开(公告)号：US08920666B2
公开(公告)日：2014-12-30
申请号：US12779998
申请日：2010-05-14
申请人： Shinichi Igarashi , Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa , Yoshinori Kinase
发明人： Shinichi Igarashi , Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa , Yoshinori Kinase
IPC分类号： C23F3/00 , G03F1/26 , H01L21/311 , G03F1/00 , G03F1/80 , G03F1/30 , G03F1/32
CPC分类号： G03F1/26 , G03F1/14 , G03F1/30 , G03F1/32 , G03F1/80 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： Disclosed herein is a dry etching method for a work layer formed over a substrate, including the steps of forming a hard mask layer over the work layer formed over the substrate, forming a resist pattern over the hard mask layer, transferring the resist pattern to the hard mask layer by first dry etching conducted using the resist pattern, and patterning the work layer by second dry etching conducted using a hard mask pattern obtained upon the transfer to the hard mask layer, wherein after the hard mask layer is patterned by the first dry etching, the patterning of the work layer by the second dry etching is conducted through changing the concentration of an auxiliary ingredient of a dry etching gas, without changing a main ingredient of the dry etching gas, in an etching apparatus in which the first dry etching has been conducted.
摘要翻译：本文公开了一种用于在衬底上形成的工作层的干式蚀刻方法，包括以下步骤：在形成在衬底上的工作层上形成硬掩模层，在硬掩模层上形成抗蚀剂图案，将抗蚀剂图案转移到硬掩模层，通过使用抗蚀剂图案进行的第一干蚀刻，以及通过使用在转印到硬掩模层上获得的硬掩模图案进行的第二干蚀刻来对工作层进行图案化，其中在硬掩模层通过第一干法蚀刻时，通过在蚀刻装置中改变干蚀刻气体的辅助成分的浓度而不改变干蚀刻气体的主要成分，通过第二干蚀刻进行工作层的图案化，其中第一干蚀刻已经进行。

27. 发明申请

US20120138453A1 SILICON TARGET FOR SPUTTERING FILM FORMATION AND METHOD FOR FORMING SILICON-CONTAINING THIN FILM 审中-公开
标题翻译：用于溅射膜形成的硅靶和形成含硅薄膜的方法
公开(公告)号：US20120138453A1
公开(公告)日：2012-06-07
申请号：US13302543
申请日：2011-11-22
申请人： Hiroki YOSHIKAWA , Yokio Inazuki , Hideo Kaneko
发明人： Hiroki YOSHIKAWA , Yokio Inazuki , Hideo Kaneko
IPC分类号： C23C14/06 , C23C14/34
CPC分类号： H01J37/3426 , C23C14/0676 , C23C14/14 , C23C14/3407 , C23C14/3414
摘要： A silicon target for sputtering film formation which enables formation of a high-quality silicon-containing thin film by inhibiting dust generation during sputtering film formation is provided. An n-type silicon target material 10 and a metallic backing plate 20 are attached to each other via a bonding layer 40. A conductive layer 30 made of a material having a smaller work function than that of the silicon target material 10 is provided on a surface of the silicon target material 10 on the bonding layer 40 side. That is, the silicon target material 10 is attached to the metallic backing plate 20 via the conductive layer 30 and the bonding layer 40. In a case of single-crystal silicon, a work function of n-type silicon is generally 4.05 eV. A work function of a material of the conductive layer 30 needs to be smaller than 4.05 eV.
摘要翻译：提供一种用于溅射成膜的硅靶，其能够通过抑制溅射成膜期间的粉尘产生而形成高质量的含硅薄膜。 n型硅靶材料10和金属背板20经由接合层40彼此附接。由具有比硅靶材料10的功函数小的材料制成的导电层30设置在接合层40侧的硅靶材10的表面。也就是说，硅靶材料10经由导电层30和接合层40附着到金属背板20.在单晶硅的情况下，n型硅的功函数通常为4.05eV。导电层30的材料的功函数需要小于4.05eV。

28. 发明授权

US08148036B2 Photomask blank and photomask 有权
标题翻译：光掩模空白和光掩模
公开(公告)号：US08148036B2
公开(公告)日：2012-04-03
申请号：US12750044
申请日：2010-03-30
申请人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/32 , G03F1/58 , G03F1/80
摘要： A photomask blank comprises a transparent substrate, a light-shielding film of an optionally transition metal-containing silicon material, and an etching mask film of a chromium compound base material. The etching mask film consists of multiple layers of different composition which are deposited by reactive sputtering, the multiple layers including, in combination, a first layer of a material which imparts a compression stress when deposited on the substrate as a single composition layer and a second layer of a material which imparts a tensile stress when deposited on the substrate as a single composition layer.
摘要翻译：光掩模坯料包括透明基板，任选含过渡金属的硅材料的遮光膜和铬化合物基材的蚀刻掩模膜。蚀刻掩模膜由通过反应溅射沉积的不同组成的多层组成，多层组合包括当作为单一组合物层沉积在基板上时施加压缩应力的材料的第一层，第二层当作为单一组合物层沉积在基材上时施加拉伸应力的材料层。

29. 发明申请

US20100291478A1 ETCHING METHOD AND PHOTOMASK BLANK PROCESSING METHOD 有权
标题翻译：蚀刻方法和光电子空白处理方法
公开(公告)号：US20100291478A1
公开(公告)日：2010-11-18
申请号：US12779998
申请日：2010-05-14
申请人： Shinichi IGARASHI , Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa , Yoshinori Kinase
发明人： Shinichi IGARASHI , Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa , Yoshinori Kinase
IPC分类号： G03F1/00 , G03F7/20
CPC分类号： G03F1/26 , G03F1/14 , G03F1/30 , G03F1/32 , G03F1/80 , H01L21/31116 , H01L21/31122 , H01L21/31138
摘要： Disclosed herein is a dry etching method for a work layer formed over a substrate, including the steps of forming a hard mask layer over the work layer formed over the substrate, forming a resist pattern over the hard mask layer, transferring the resist pattern to the hard mask layer by first dry etching conducted using the resist pattern, and patterning the work layer by second dry etching conducted using a hard mask pattern obtained upon the transfer to the hard mask layer, wherein after the hard mask layer is patterned by the first dry etching, the patterning of the work layer by the second dry etching is conducted through changing the concentration of an auxiliary ingredient of a dry etching gas, without changing a main ingredient of the dry etching gas, in an etching apparatus in which the first dry etching has been conducted.
摘要翻译：本文公开了一种用于在衬底上形成的工作层的干式蚀刻方法，包括以下步骤：在形成在衬底上的工作层上形成硬掩模层，在硬掩模层上形成抗蚀剂图案，将抗蚀剂图案转移到硬掩模层，通过使用抗蚀剂图案进行的第一干蚀刻，以及通过使用在转印到硬掩模层上获得的硬掩模图案进行的第二干蚀刻来对工作层进行图案化，其中在硬掩模层通过第一干法蚀刻时，通过在蚀刻装置中改变干蚀刻气体的辅助成分的浓度而不改变干蚀刻气体的主要成分，通过第二干蚀刻进行工作层的图案化，其中第一干蚀刻已经进行。

30. 发明申请

US20070148642A1 Method for detecting gene specifying allergic predisposition 审中-公开
标题翻译：检测指定过敏性倾向的基因的方法
公开(公告)号：US20070148642A1
公开(公告)日：2007-06-28
申请号：US10526061
申请日：2003-08-29
申请人： Naomi Kondo , Eiko Matsui , Hideo Kaneko , Minako Aoki , Mizuho Nagao , Kimiko Kasahara , Koji Tatebayashi , Hiroaki Hattori , Toru Egashira
发明人： Naomi Kondo , Eiko Matsui , Hideo Kaneko , Minako Aoki , Mizuho Nagao , Kimiko Kasahara , Koji Tatebayashi , Hiroaki Hattori , Toru Egashira
IPC分类号： C12Q1/68 , C07H21/04
CPC分类号： C12Q1/6883 , C12Q2600/156 , C12Q2600/172
摘要： A method of detecting genes which comprises detecting gene polymorphisms in allergy-predisposition-related genes; i.e., interleukin 12 receptor IL-1 β2 chain and β1 chain genes, interleukin 18 receptor α chain gene, interferon γ receptor 1 chain gene and interleukin 12.p40 subunit gene, to thereby detect allergic predisposition. Use of the present method enables contribution to the prevention of onset of allergic diseases and to the treatment of allergic diseases.
摘要翻译：一种检测基因的方法，包括检测过敏易感基因相关基因中的基因多态性; 即白介素12受体IL-1β2链和β1链基因，白细胞介素18受体α链基因，干扰素γ受体1链基因和白介素12.p40亚基基因，从而检测过敏性倾向。使用本发明的方法能够有助于预防过敏性疾病的发作和对过敏性疾病的治疗。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式