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21. 发明授权

US08240025B2 Method for manufacturing head including light source unit for thermal assist 有权
标题翻译：制造头部的方法，包括用于热辅助的光源单元
公开(公告)号：US08240025B2
公开(公告)日：2012-08-14
申请号：US12888916
申请日：2010-09-23
申请人： Koji Shimazawa , Seiichi Takayama , Nobuyuki Mori , Yoshihiro Tsuchiya , Shinji Hara
发明人： Koji Shimazawa , Seiichi Takayama , Nobuyuki Mori , Yoshihiro Tsuchiya , Shinji Hara
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/105 , G11B5/314 , G11B5/6088 , G11B2005/0021 , Y10T29/49032 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/53165 , Y10T29/53265 , Y10T428/1143 , Y10T428/1171 , Y10T428/1193
摘要： Provided is a method and apparatus to manufacture a thermally-assisted magnetic recording head in which a light source unit including a light source and a slider including an optical system are joined. The method comprises steps of: adhering by suction the light source unit with a back holding jig; bringing the light into contact with a slider back surface; applying a load to a load application surface of the light source unit by a loading means to bring a joining surface of the light source unit into conformity with the slider back surface; positioning the light source unit apart from the slider, and then aligning the light source with the optical system; bringing again the light source unit into contact with the slider; and applying a load again to the load application surface.
摘要翻译：提供了一种制造热辅助磁记录头的方法和装置，其中包括光源的光源单元和包括光学系统的滑块相连接。该方法包括以下步骤：用后保持夹具吸附光源单元; 使光与滑块背面接触; 通过加载装置将负载施加到光源单元的负载施加表面，以使光源单元的接合表面与滑块背面一致; 将光源单元与滑块分开，然后将光源与光学系统对准; 使光源单元再次与滑块接触; 并将负载再次施加到负载施加表面。

22. 发明授权

US08214823B2 Cluster system, process for updating software, service provision node, and computer-readable medium storing service provision program 失效
标题翻译：集群系统，更新软件的过程，服务提供节点和存储服务提供程序的计算机可读介质
公开(公告)号：US08214823B2
公开(公告)日：2012-07-03
申请号：US12553760
申请日：2009-09-03
申请人： Yoshihiro Tsuchiya , Riichiro Take , Yasuo Noguchi , Kazutaka Ogihara , Masahisa Tamura , Tetsutaro Maruyama , Takashi Watanabe , Tatsuo Kumano
发明人： Yoshihiro Tsuchiya , Riichiro Take , Yasuo Noguchi , Kazutaka Ogihara , Masahisa Tamura , Tetsutaro Maruyama , Takashi Watanabe , Tatsuo Kumano
IPC分类号： G06F9/44 , G06F15/173 , G06F15/177
CPC分类号： H04L43/0817 , G06F8/65 , H04L43/103
摘要： In a cluster system: a heartbeat transmission unit in a service provision node transmits to a monitoring node a heartbeat packet which contains interval information indicating an interval greater than normal intervals at which normal heartbeat packets are transmitted, when an execution unit in the service provision node receives a stop command. Thereafter, when software realizing the execution unit is updated and the execution unit is restarted, the heartbeat transmission unit periodically transmits the normal heartbeat packets to the monitoring node at the normal intervals, where the normal heartbeat packets contain interval information indicating the normal intervals. A heartbeat monitoring unit in the monitoring node determines that the execution unit is in operation, while the monitoring node receives heartbeat packets at intervals indicated by the interval information stored in the monitoring node and updated with received interval information.
摘要翻译：在群集系统中，服务提供节点中的心跳发送单元，在服务提供节点中的执行单元向监视节点发送包含间隔信息的心跳分组，所述心跳分组包含间隔信息，所述间隔信息指示大于正常心跳分组的正常间隔的间隔，收到停止命令。此后，当软件实现执行单元被更新并且执行单元重新启动时，心跳传输单元周期性地以标准间隔向监视节点发送正常心跳分组，其中正常心跳分组包含指示正常间隔的间隔信息。监视节点中的心跳监视单元确定执行单元正在运行，而监视节点以由存储在监视节点中的间隔信息指示的间隔接收心跳分组，并用接收到的间隔信息进行更新。

23. 发明授权

US08194363B2 Thin film magnetic head provided with dual synthetic free layers 有权
标题翻译：薄膜磁头配有双层合成自由层
公开(公告)号：US08194363B2
公开(公告)日：2012-06-05
申请号：US12379624
申请日：2009-02-26
申请人： Shinji Hara , Yoshihiro Tsuchiya
发明人： Shinji Hara , Yoshihiro Tsuchiya
IPC分类号： G11B21/24
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996
摘要： A thin film magnetic head includes a first through fourth free layers, a spacer layer, and a bias magnetic field application layer. The first and second free layers are magnetized in opposite directions of each other in the orthogonal direction to the ABS when the bias magnetic field is applied to the first and second free layers, and are exchange-coupled such that an angle between the magnetization direction of the bias magnetic field and the first free layer is acute and such that an angle between the magnetization direction of the bias magnetic field and the second free layer is acute. Similarly, the third and fourth layers have the same configuration.
摘要翻译：薄膜磁头包括第一至第四自由层，间隔层和偏置磁场施加层。当偏置磁场施加到第一和第二自由层时，第一自由层和第二自由层在与ABS的正交方向彼此相反的方向上被磁化，并且被交换耦合，使得磁化方向偏置磁场和第一自由层是锐角的，使得偏置磁场的磁化方向与第二自由层之间的角度是锐角的。类似地，第三层和第四层具有相同的构造。

24. 发明授权

US08166242B2 Distributed disk cache system and distributed disk cache method 失效
标题翻译：分布式磁盘缓存系统和分布式磁盘缓存方法
公开(公告)号：US08166242B2
公开(公告)日：2012-04-24
申请号：US12471940
申请日：2009-05-26
申请人： Kazuichi Oe , Tatsuo Kumano , Yasuo Noguchi , Yoshihiro Tsuchiya , Kazutaka Ogihara , Masahisa Tamura , Tetsutaro Maruyama , Takashi Watanabe , Minoru Kamosida , Shigeyuki Miyamoto
发明人： Kazuichi Oe , Tatsuo Kumano , Yasuo Noguchi , Yoshihiro Tsuchiya , Kazutaka Ogihara , Masahisa Tamura , Tetsutaro Maruyama , Takashi Watanabe , Minoru Kamosida , Shigeyuki Miyamoto
IPC分类号： G06F13/00 , G06F12/00 , G06F15/167
CPC分类号： G06F12/0866 , G06F3/061 , G06F3/0635 , G06F3/0656 , G06F3/067 , G06F12/0888
摘要： According to an aspect of the embodiment, a packet analyzing apparatus monitors a concentration level of input and output access from an access apparatus to a disk device, specifies a data area to which the concentration level of input and output access exceeds a first threshold, and instructs a storage server to cache the data area. The packet analyzing apparatus monitors a concentration level of input and output access to a data area to which the data area is cached, and, when the concentration level of input and output access is below a second threshold, instructs the storage server to release the caching.
摘要翻译：根据实施例的一个方面，分组分析装置监视从访问装置到盘装置的输入和输出访问的集中度，指定输入和输出访问的浓度水平超过第一阈值的数据区域，以及指示存储服务器缓存数据区域。分组分析装置监视对数据区域被缓存的数据区域的输入和输出访问的集中水平，并且当输入和输出访问的浓度水平低于第二阈值时，指示存储服务器释放缓存。

25. 发明授权

US08156381B2 Storage management apparatus and storage system 失效
标题翻译：存储管理装置和存储系统
公开(公告)号：US08156381B2
公开(公告)日：2012-04-10
申请号：US12331662
申请日：2008-12-10
申请人： Masahisa Tamura , Yasuo Noguchi , Kazutaka Ogihara , Yoshihiro Tsuchiya , Tetsutaro Maruyama , Riichiro Take
发明人： Masahisa Tamura , Yasuo Noguchi , Kazutaka Ogihara , Yoshihiro Tsuchiya , Tetsutaro Maruyama , Riichiro Take
IPC分类号： G06F11/00
CPC分类号： G06F11/1076 , G06F3/0653 , G06F11/2069 , G06F11/2087 , G06F11/3034 , G06F11/3072 , G06F2211/1088
摘要： A storage management apparatus manages a plurality of storage apparatuses connected to each other over a network in a storage system that distributes data among the storage apparatuses and stores the data therein. The storage management apparatus has a patrol process executing unit configured to execute a patrol process to confirm whether a storage area of each storage apparatus operates normally and a patrol flow controlling unit configured to control a patrol flow indicating the speed of the patrol process executed by the patrol process executing unit.
摘要翻译：存储管理装置通过在存储装置中分配数据的存储系统中的网络上的多个存储装置进行管理，并存储数据。所述存储管理装置具有：巡检处理执行单元，其被配置为执行巡视处理，以确认每个存储装置的存储区域是否正常运行;巡检流控制单元，被配置为控制指示由所述巡航过程执行的巡视过程的速度的巡视流巡逻过程执行单元。

26. 发明授权

US08154828B2 Magnetoresistive effect element in CPP-type structure and magnetic disk device 有权
标题翻译： CPP型结构和磁盘装置中的磁阻效应元件
公开(公告)号：US08154828B2
公开(公告)日：2012-04-10
申请号：US12500835
申请日：2009-07-10
申请人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
发明人： Yoshihiro Tsuchiya , Shinji Hara , Kiyoshi Noguchi , Migaku Takahashi , Masakiyo Tsunoda
IPC分类号： G11B5/39
CPC分类号： G11B5/3929 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer is oriented in a (001) crystal plane, the spacer layer is formed and oriented in a (001) crystal plane on the (001) crystal plane of the free layer. Therefore, in a low resistance area where an area resistivity (AR) of the MR element is, for example, lower than 0.3 Ω·μm2, an MR element that has a large variation of a resistance is obtained.
摘要翻译： CPP结构中的MR元件包括由Cu制成的间隔层，包含CoFe的磁性固定层和层压以夹持间隔层的CoFe的自由层。自由层位于磁性固定层的下方。自由层在（001）晶面取向，间隔层形成并定向在自由层的（001）晶面上的（001）晶面上。因此，在MR元件的面积电阻率（AR）例如低于0.3

27. 发明授权

US08031444B2 Magnetoresistive device of the CPP type, and magnetic disk system 有权
标题翻译： CPP型磁阻器和磁盘系统
公开(公告)号：US08031444B2
公开(公告)日：2011-10-04
申请号：US12255105
申请日：2008-10-21
申请人： Tsutomu Chou , Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Shinji Hara , Hironobu Matsuzawa
发明人： Tsutomu Chou , Tomohito Mizuno , Koji Shimazawa , Yoshihiro Tsuchiya , Shinji Hara , Hironobu Matsuzawa
IPC分类号： G11B5/33
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3967 , G11B2005/3996 , H01F10/3254 , H01L43/10
摘要： The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the group consisting of Zn, Ge, V, and Cr in a content of 0.05 to 0.90 at %: there is the advantage obtained that ever higher MR ratios are achievable while holding back an increase in the area resistivity AR.
摘要翻译：在本发明的巨磁阻器件（CPP-GMR器件）中形成间隔层的一部分的半导体氧化物层由纤锌矿结构的氧化锌组成，该氧化锌掺杂有至少一种选自以下的金属元素的掺杂剂：的Zn，Ge，V和Cr的含量为0.05〜0.90原子％：具有获得更高MR比可以实现的优点，同时阻止面积电阻率AR的增加。

28. 发明授权

US07944650B2 Magnetoresistive element including layered film touching periphery of spacer layer 有权
标题翻译：磁阻元件包括层间膜接触间隔层的周边
公开(公告)号：US07944650B2
公开(公告)日：2011-05-17
申请号：US11898335
申请日：2007-09-11
申请人： Yoshihiro Tsuchiya , Koji Shimazawa , Tomohito Mizuno , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
发明人： Yoshihiro Tsuchiya , Koji Shimazawa , Tomohito Mizuno , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/39 , G11B5/127 , G11B5/33
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996
摘要： An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located in the outer surface of the MR stack. The magnetoresistive element further includes a layered film that touches the periphery of the spacer layer. The spacer layer includes a semiconductor layer formed using an oxide semiconductor as a material. The layered film includes a first layer, a second layer, and a third layer stacked in this order. The first layer is formed of the same material as the semiconductor layer, and touches the periphery of the spacer layer. The second layer is a metal layer that forms a Schottky barrier at the interface between the first layer and the second layer. The third layer is an insulating layer.
摘要翻译： MR元件包括包括第一铁磁层，第二铁磁层和设置在第一和第二铁磁层之间的间隔层的MR堆叠。 MR堆叠具有外表面，并且间隔层具有位于MR堆叠的外表面中的周边。磁阻元件还包括接触间隔层的周边的层状膜。间隔层包括使用氧化物半导体作为材料形成的半导体层。层叠膜包括依次堆叠的第一层，第二层和第三层。第一层由与半导体层相同的材料形成，并且与间隔层的周边接触。第二层是在第一层和第二层之间的界面处形成肖特基势垒的金属层。第三层是绝缘层。

29. 发明授权

US07876534B2 Magneto-resistive effect device of the CPP type, and magnetic disk system 有权
标题翻译： CPP型磁阻效应器，磁盘系统
公开(公告)号：US07876534B2
公开(公告)日：2011-01-25
申请号：US12014575
申请日：2008-01-15
申请人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Kiyoshi Noguchi
发明人： Tsutomu Chou , Yoshihiro Tsuchiya , Daisuke Miyauchi , Kiyoshi Noguchi
IPC分类号： G11B5/11 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A magnetoresistive device comprising a magnetoresistive unit, an upper shield layer and a lower shield layer stacked such that the magnetoresistive unit is held between them. The magnetoresistive unit comprises a nonmagnetic metal intermediate layer, a first ferromagnetic layer and a second ferromagnetic layer stacked with the nonmagnetic metal intermediate layer in the middle. When no bias magnetic field is applied, the first and second ferromagnetic layers have mutually antiparallel magnetizations. The magnetoresistive unit further comprises first and second side shield layers, and first and second biasing layers located to be magnetically coupled to the first and second side shield layers, wherein magnetic fluxes fed from the bias magnetic fields pass through the first and second side shield layers positioned in proximity to the magnetoresistive unit such that the magnetizations of the first and second ferromagnetic layers become substantially orthogonal to each other.
摘要翻译：磁阻器件包括磁阻单元，上屏蔽层和下屏蔽层，以使磁阻单元保持在它们之间。磁阻单元包括在中间与非磁性金属中间层堆叠的非磁性金属中间层，第一铁磁层和第二铁磁层。当不施加偏置磁场时，第一和第二铁磁层具有相互反平行的磁化。磁阻单元还包括第一和第二侧屏蔽层，以及第一和第二偏置层，其被定位成磁耦合到第一和第二侧屏蔽层，其中从偏置磁场馈送的磁通量通过第一和第二侧屏蔽层位于磁阻单元附近，使得第一和第二铁磁层的磁化基本上彼此正交。

30. 发明授权

US07804667B2 Magnetoresistive element with a Heusler alloy layer that has a region in which an additive element changes in concentration 有权
标题翻译：具有Heusler合金层的磁阻元件，其具有添加元素浓度变化的区域
公开(公告)号：US07804667B2
公开(公告)日：2010-09-28
申请号：US11725476
申请日：2007-03-20
申请人： Kei Hirata , Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
发明人： Kei Hirata , Yoshihiro Tsuchiya , Tomohito Mizuno , Koji Shimazawa
IPC分类号： G11B5/39
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996
摘要： An MR element incorporates a nonmagnetic conductive layer, and a pinned layer and a free layer that are disposed to sandwich the nonmagnetic conductive layer. Each of the pinned layer and the free layer includes a Heusler alloy layer. The Heusler alloy layer contains a Heusler alloy in which atoms of a magnetic metallic element are placed at body-centered positions of unit cells, and an additive element that is a nonmagnetic metallic element that does not constitute the Heusler alloy. At least one of the pinned layer and the free layer includes a region in which the concentration of the additive element increases as the distance from the nonmagnetic conductive layer decreases, the region being adjacent to the nonmagnetic conductive layer.
摘要翻译： MR元件包括非磁性导电层，以及设置成夹持非磁性导电层的被钉扎层和自由层。每个被钉扎层和自由层包括Heusler合金层。 Heusler合金层包含Heusler合金，其中磁性金属元素的原子被放置在单元电池的体中心位置，而添加元素是不构成Heusler合金的非磁性金属元素。被钉扎层和自由层中的至少一个包括随着距离非磁性导电层的距离减小的添加元素的浓度增加的区域，该区域与非磁性导电层相邻。

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