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21. 发明申请

US20080261059A1 CLAD TEXTURED METAL SUBSTRATE FOR FORMING EPITAXIAL THIN FILM THEREON AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：用于形成外源薄膜的层压金属基材及其制造方法
公开(公告)号：US20080261059A1
公开(公告)日：2008-10-23
申请号：US12101228
申请日：2008-04-11
申请人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
发明人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
IPC分类号： B32B15/01 , C09J5/02 , C23F1/02 , B32B37/00
CPC分类号： C30B29/02 , B32B15/01 , B32B15/015 , C21D8/1277 , C23C26/00 , H01F41/32 , H01L39/2454 , Y10T428/12937 , Y10T428/12944 , Y10T428/31678
摘要： The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. A clad textured metal substrate for forming the epitaxial thin film thereon according to the present invention comprises a metallic layer and a nickel layer which is bonded to at least one face of the metallic layer, wherein the nickel layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦7 degrees and has a nickel purity of 99.9% or more. The oriented metal substrate is manufactured by cold-working the nickel sheet having a purity of 99.9% or more, heat-treating it for orientation, and bonding the metal sheet with the oriented nickel sheet by using a surface activated bonding process.
摘要翻译：本发明提供了一种用于在其上形成外延薄膜的取向基板，其具有比常规的更高的取向性和高强度的取向基板及其制造方法。根据本发明的用于在其上形成外延薄膜的复合纹理金属基底包括金属层和镍层，其结合到金属层的至少一个面上，其中镍层具有{100} <001> 晶体轴的偏角Deltaphi满足Deltaphi <= 7度并且镍纯度为99.9％以上的立方体纹理。定向金属基板通过对纯度为99.9％以上的镍片进行冷加工，将其热处理以进行取向，并通过表面活性接合法将金属板与取向镍片接合来制造。

22. 发明申请

US20080092502A1 Microporous ceramic materials 有权
标题翻译：微孔陶瓷材料
公开(公告)号：US20080092502A1
公开(公告)日：2008-04-24
申请号：US11907220
申请日：2007-10-10
申请人： Yasunori Ando , Seiji Yamada , Hisatomi Taguchi , Yosuke Takahashi , Shigeo Nagaya , Kiyoshi Komura
发明人： Yasunori Ando , Seiji Yamada , Hisatomi Taguchi , Yosuke Takahashi , Shigeo Nagaya , Kiyoshi Komura
IPC分类号： C04B38/06 , B01D39/20
CPC分类号： C04B35/565 , B01D53/02 , B01D71/02 , B01D2253/106 , B01D2323/12 , C04B35/584 , C04B35/63 , C04B35/634 , C04B38/0058 , C04B2111/00793 , C04B2111/0081 , C04B2235/3217 , C04B2235/3225 , C04B2235/3826 , C04B2235/3834 , C04B2235/3873 , C04B2235/3882 , C04B2235/428 , C04B2235/46 , C04B2235/5436 , C04B2235/5445 , C04B2235/604 , C04B2235/6562 , C04B2235/668 , C04B2235/72 , C04B2235/77 , C04B2235/80 , C04B2235/96 , Y10S55/05 , C04B38/0074
摘要： The present invention provides methods for making a microporous ceramic material using a metal silicon powder and including a reaction sintering process of the silicon. A material for forming a microporous ceramic material used in these methods includes a metal silicon powder, a silicon nitride powder and/or a silicon carbide powder, and if desired, a yttrium oxide powder and/or an aluminum oxide powder. These methods can make a microporous ceramic material that can be used preferably as a gas or liquid filter, a catalyst carrier or a support of a gas separation membrane.
摘要翻译：本发明提供使用金属硅粉末制造微孔陶瓷材料并包括硅的反应烧结工艺的方法。用于形成用于这些方法的微孔陶瓷材料的材料包括金属硅粉末，氮化硅粉末和/或碳化硅粉末，并且如果需要，包括氧化钇粉末和/或氧化铝粉末。这些方法可以制成可优选用作气体或液体过滤器，催化剂载体或气体分离膜的载体的微孔陶瓷材料。

23. 发明授权

US07109137B2 Methods for making microporous ceramic materials 失效
标题翻译：制造微孔陶瓷材料的方法
公开(公告)号：US07109137B2
公开(公告)日：2006-09-19
申请号：US11115190
申请日：2005-04-27
申请人： Balagopal N. Nair , Yasunori Ando , Hisatomi Taguchi , Shigeo Nagaya , Kiyoshi Komura
发明人： Balagopal N. Nair , Yasunori Ando , Hisatomi Taguchi , Shigeo Nagaya , Kiyoshi Komura
IPC分类号： C04B38/00
CPC分类号： C04B38/0022 , B01D39/2093 , B01D67/0046 , B01D71/02 , B01D2323/08 , C01B3/503 , C01B2203/0227 , C01B2203/041 , C01B2203/0465 , C04B35/584 , C04B35/589 , C04B35/6264 , C04B35/62655 , C04B35/6267 , C04B35/6268 , C04B2111/00793 , C04B2235/3217 , C04B2235/3225 , C04B2235/3873 , C04B2235/465 , C04B2235/5409 , C04B2235/668 , C04B2235/94 , Y10T428/249969 , C04B38/0054 , C04B41/4582
摘要： The present invention provides a method for making a microporous ceramic material and includes the steps of (a) preparing a starting material for firing comprising a nonoxide ceramic precursor containing silicon as an essential component; (b) heating the starting material for firing in an atmosphere containing at least 1 mol % of hydrogen so as to form microporous ceramic product; and (c) cooling the microporous ceramic product.
摘要翻译：本发明提供一种制造微孔陶瓷材料的方法，包括以下步骤：（a）制备包含以硅为主要成分的非氧化物陶瓷前体的焙烧原料; （b）在含有至少1mol％氢气的气氛中加热焙烧原料以形成微孔陶瓷产品; 和（c）冷却微孔陶瓷产品。

24. 发明申请

US20060021788A1 Composite conductor, superconductive apparatus system, and composite conductor manufacturing method 失效
标题翻译：复合导体，超导装置系统和复合导体制造方法
公开(公告)号：US20060021788A1
公开(公告)日：2006-02-02
申请号：US10995333
申请日：2004-11-24
申请人： Shuichi Kohayashi , Kazuyuki Uemura , Shigeo Nagaya , Naoji Kashima
发明人： Shuichi Kohayashi , Kazuyuki Uemura , Shigeo Nagaya , Naoji Kashima
IPC分类号： H01B12/00
CPC分类号： H01L39/02 , H01F6/065 , H01R4/68 , Y10S505/886 , Y10S505/887 , Y10T29/49014
摘要： To provide a composite conductor suitable as a connecting conductor capable of reducing generation of Joule heat in a joint part between a conductor on a system side and a conductor on a power-supply side, while using a superconductor with less thermal invasion to a superconductive apparatus system. A composite conductor 10 comprises a superconductor 12 provided continuously in the flowing direction of the electric current, and a metal conductor 11 joined with the superconductor 12 and provided at least at a joint part with mating conductors 50, 60 to be joined, wherein the electric current is fed and received between the metal conductor 11 and the mating conductors 50, 60 by joining the metal conductor 11 and the mating conductors 50, 60, and wherein the superconductor 12 is arranged in the metal conductor 11 so as to be approximately parallel to the joint surface (joint interface) between the metal conductor 11 and the mating conductors 50, 60.
摘要翻译：为了提供适合作为连接导体的复合导体，其能够在使用对超导装置具有较少的热侵入的超导体的同时在系统侧的导体与电源侧的导体之间的接合部中减少焦耳热的产生系统。复合导体10包括在电流的流动方向上连续设置的超导体12和与超导体12连接并且至少与接合部分的配合导体50,60连接的金属导体11，其中电气电流通过接合金属导体11和配合导体50,60而在金属导体11和配合导体50,60之间进给和接收，并且其中超导体12布置在金属导体11中，以便大致平行于金属导体11和配合导体50,60之间的接合表面（接合界面）。

25. 发明授权

US06743531B2 Oxide superconducting conductor and its production method 失效
标题翻译：氧化物超导导体及其制备方法
公开(公告)号：US06743531B2
公开(公告)日：2004-06-01
申请号：US10177962
申请日：2002-06-19
申请人： Kazunori Onabe , Takashi Saito , Naoji Kashima , Shigeo Nagaya
发明人： Kazunori Onabe , Takashi Saito , Naoji Kashima , Shigeo Nagaya
IPC分类号： H01B1200
CPC分类号： C23C28/322 , C23C12/00 , C23C16/408 , C23C16/545 , C23C26/00 , C23C28/321 , C23C28/325 , C23C28/345 , C23C28/3455 , H01L39/2438 , H01L39/2461 , Y10S428/93
摘要： The object of the present invention is to provide an oxide superconducting conductor having superior strength and superconductor characteristics, and its production method. In order to achieve the above object, the present invention provides an oxide superconducting conductor having an oxide superconductor layer obtained by a method in which a raw material gas of an oxide superconductor is chemically reacted on a base material for forming an oxide superconductor provided with an Ag layer having a rolling texture formed on at least one side of a base material containing Ag base material or other base metal, a diffusion layer in which Cu is diffused in Ag is formed on the surface layer of the oxide superconductor layer side of the above base material, and the above oxide superconductor layer is formed on the above diffusion layer; and, an oxide superconducting conductor comprising the sequential generation of a plurality of layers of oxide superconductor containing Cu by CVD on an Ag layer of a base material for forming an oxide superconducting conductor provided with an Ag layer having a rolling texture formed on at least one side of an Ag base material or other base metal, and among the above plurality of oxide superconductor layers, the Cu content of the oxide superconductor layer immediately above the base material is made to have a higher concentration than the Cu content of the other oxide superconductor layers.
摘要翻译：本发明的目的是提供一种具有优异的强度和超导特性的氧化物超导导体及其制造方法。为了实现上述目的，本发明提供一种氧化物超导导体，其具有通过方法获得的氧化物超导体层其中氧化物超导体的原料气体在用于形成氧化物超导体的基材上发生化学反应，所述氧化物超导体具有形成在含有Ag基材或其它贱金属的基材的至少一侧上的具有滚动结构的Ag层，在上述基材的氧化物超导体层侧的表面层上形成有在Ag中扩散Cu的扩散层，在上述扩散层上形成上述氧化物超导体层; 以及氧化物超导导体，其包括在用于形成氧化物超导导体的基材的Ag层上通过CVD连续生成含有Cu的多层氧化物超导体，所述氧化物超导体具有形成在至少一个 Ag基材或其他贱金属的侧面，并且在上述多个氧化物超导体层中，使得在基材上方的氧化物超导体层的Cu含量比其他氧化物超导体的Cu含量高层。

26. 发明授权

US09558873B2 Method for manufacturing superconducting wire, and superconducting wire 有权
标题翻译：制造超导线及超导线的方法
公开(公告)号：US09558873B2
公开(公告)日：2017-01-31
申请号：US14376325
申请日：2012-02-01
申请人： Ryusuke Nakasaki , Akinobu Nakai , Tomonori Watanabe , Naoji Kashima , Shigeo Nagaya
发明人： Ryusuke Nakasaki , Akinobu Nakai , Tomonori Watanabe , Naoji Kashima , Shigeo Nagaya
IPC分类号： H01B12/06 , H01F6/06 , H01L39/24 , H01F41/04 , H01L39/14
CPC分类号： H01F6/06 , H01B12/06 , H01F41/048 , H01L39/143 , H01L39/2441 , H01L39/2461
摘要： A method for manufacturing a superconducting wire material in which the superconducting current is not saturated even when a superconducting layer is made into a thick film, and a superconducting wire material. In the method a superconducting layer is formed on a metal substrate interposed by an intermediate layer, the method including heating the metal substrate up to the film-formation temperature of a superconducting film for forming the superconducting layer, forming a superconducting film having a film thickness of at least 10 nm and no more than 200 nm on the intermediate layer, and reducing the metal substrate temperature to a level below the film-formation temperature of the superconducting film, and the superconducting film-formation, including the heating, the film-formation, and the cooling, are performed a plurality of times.
摘要翻译：一种超导线材的制造方法，其中即使超导层制成厚膜，超导电流也不饱和，以及超导线材。在该方法中，在由中间层插入的金属基板上形成超导层，该方法包括将金属基板加热直到形成超导层的超导膜的成膜温度，形成具有膜厚度的超导膜在中间层上为至少10nm且不大于200nm，并且将金属基板温度降低到低于超导膜的成膜温度的水平，并且包括加热膜的超导膜形成，形成和冷却，进行多次。

27. 发明授权

US08038810B2 Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing the same 有权
标题翻译：用于在其上形成外延薄膜的带纹理金属基底及其制造方法
公开(公告)号：US08038810B2
公开(公告)日：2011-10-18
申请号：US13030291
申请日：2011-02-18
申请人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
发明人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
IPC分类号： C22F1/08
CPC分类号： H01L39/2454 , B32B15/015 , C21D8/12 , C21D8/1277 , Y10T428/12903 , Y10T428/1291 , Y10T428/12924
摘要： A method for manufacturing a oriented substrate for forming an epitaxial thin film thereon, having a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The clad textured metal substrate includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The substrate has an intermediate layer on the surface of the copper layer, to form the epitaxial thin film thereon.
摘要翻译：一种制造用于在其上形成外延薄膜的取向基板的方法，其具有比常规方法更好的取向和高强度的方法及其制造方法。包覆纹理金属基板包括金属层和与上述金属层的至少一个表面结合的铜层，其中上述铜层具有{100} <001>立方体结构，其中偏角＆Dgr＆amp; phgr ; 的晶轴满足＆Dgr＆amp;＆nlE; 6度。衬底在铜层的表面上具有中间层，以在其上形成外延薄膜。

28. 发明申请

US20110155050A1 CLAD TEXTURED METAL SUBSTRATE FOR FORMING EPITAXIAL THIN FILM THEREON AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：用于形成外源薄膜的层压金属基材及其制造方法
公开(公告)号：US20110155050A1
公开(公告)日：2011-06-30
申请号：US13030291
申请日：2011-02-18
申请人： NAOJI KASHIMA , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
发明人： NAOJI KASHIMA , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
IPC分类号： C30B23/02 , C23F1/00 , C23C14/34 , C23C14/46
CPC分类号： H01L39/2454 , B32B15/015 , C21D8/12 , C21D8/1277 , Y10T428/12903 , Y10T428/1291 , Y10T428/12924
摘要： A method for manufacturing a oriented substrate for forming an epitaxial thin film thereon, having a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The clad textured metal substrate includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The substrate has an intermediate layer on the surface of the copper layer, to form the epitaxial thin film thereon.
摘要翻译：一种制造用于在其上形成外延薄膜的取向基板的方法，其具有比常规方法更好的取向和高强度的方法及其制造方法。包覆纹理金属基板包括金属层和与上述金属层的至少一个表面结合的铜层，其中上述铜层具有{100} <001>立方体结构，其中偏角＆Dgr＆amp; phgr ; 的晶轴满足＆Dgr＆amp;＆nlE; 6度。衬底在铜层的表面上具有中间层，以在其上形成外延薄膜。

29. 发明申请

US20080261072A1 CLAD TEXTURED METAL SUBSTRATE FOR FORMING EPITAXIAL THIN FILM THEREON AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：用于形成外源薄膜的层压金属基材及其制造方法
公开(公告)号：US20080261072A1
公开(公告)日：2008-10-23
申请号：US12101348
申请日：2008-04-11
申请人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
发明人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
IPC分类号： B32B15/20 , C22F1/08 , C23C14/34
CPC分类号： H01L39/2454 , B32B15/015 , C21D8/12 , C21D8/1277 , Y10T428/12903 , Y10T428/1291 , Y10T428/12924
摘要： The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The clad textured metal substrate for forming the epitaxial thin film thereon has an intermediate layer on the surface of the copper layer so as to form the epitaxial thin film thereon, wherein the above described intermediate layer preferably includes at least one layer of a material selected from the group consisting of nickel, nickel oxide, zirconium oxide, rare-earth oxide, magnesium oxide, strontium titanate (STO), strontium barium titanate (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium and platinum.
摘要翻译：本发明提供了一种用于在其上形成外延薄膜的取向基板，其具有比常规的更高的取向性和高强度的取向基板及其制造方法。本发明提供了一种用于在其上形成外延薄膜的包层纹理金属衬底，其包括金属层和与上述金属层的至少一个表面结合的铜层，其中上述铜层具有{100} <001>立方体纹理，其中晶轴的偏角Deltaphi满足Deltaphi <= 6度。用于在其上形成外延薄膜的包层纹理金属基板在铜层的表面上具有中间层，以在其上形成外延薄膜，其中上述中间层优选包括至少一层选自包括镍，氧化镍，氧化锆，稀土氧化物，氧化镁，钛酸锶（STO），钛酸锶钡（SBTO），氮化钛，银，钯，金，铱，钌，铑和铂组成的组。

30. 发明申请

US20080078675A1 Support for oxygen separation membrane element and the element using the same 有权
标题翻译：支持氧分离膜元件和使用它的元件
公开(公告)号：US20080078675A1
公开(公告)日：2008-04-03
申请号：US11878887
申请日：2007-07-27
申请人： Akihiro Kawahara , Shigeo Nagaya , Hiroshi Seo
发明人： Akihiro Kawahara , Shigeo Nagaya , Hiroshi Seo
IPC分类号： B01D69/10
CPC分类号： B01D63/06 , B01D53/22 , B01D69/10 , B01D2313/04 , B01D2313/06 , C01B13/0255 , C01B2210/0046
摘要： A support for an oxygen separation membrane element to support a dense and cylindrical electrolytic membrane having oxygen ion permeability, comprises a base axially extending and having a cylindrical surface extending axially, and a plurality of ribs formed on the cylindrical surface of the base, radially projecting and axially extending, for supporting the electrolytic membrane at their ends being radially distant from the cylindrical surface of the base.
摘要翻译：支撑氧分离膜元件以支撑具有氧离子渗透性的致密且圆柱形的电解膜，包括轴向延伸并具有轴向延伸的圆柱形表面的基部和形成在基部的圆柱形表面上的多个肋，径向突出并且轴向延伸，用于在它们的端部处支撑电解膜，所述端部沿径向远离基座的圆柱形表面。

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